CN100576569C - 肖特基器件和形成方法 - Google Patents

肖特基器件和形成方法 Download PDF

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Publication number
CN100576569C
CN100576569C CN200580021992A CN200580021992A CN100576569C CN 100576569 C CN100576569 C CN 100576569C CN 200580021992 A CN200580021992 A CN 200580021992A CN 200580021992 A CN200580021992 A CN 200580021992A CN 100576569 C CN100576569 C CN 100576569C
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CN
China
Prior art keywords
region
schottky
conductivity type
conductive layer
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200580021992A
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English (en)
Chinese (zh)
Other versions
CN1977389A (zh
Inventor
维什努克·肯卡
维贾·帕塔萨拉蒂
祝荣华
阿米塔瓦·博斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
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Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1977389A publication Critical patent/CN1977389A/zh
Application granted granted Critical
Publication of CN100576569C publication Critical patent/CN100576569C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Electrodes Of Semiconductors (AREA)
CN200580021992A 2004-06-30 2005-05-19 肖特基器件和形成方法 Expired - Fee Related CN100576569C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/881,678 2004-06-30
US10/881,678 US7355260B2 (en) 2004-06-30 2004-06-30 Schottky device and method of forming

Publications (2)

Publication Number Publication Date
CN1977389A CN1977389A (zh) 2007-06-06
CN100576569C true CN100576569C (zh) 2009-12-30

Family

ID=35512975

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580021992A Expired - Fee Related CN100576569C (zh) 2004-06-30 2005-05-19 肖特基器件和形成方法

Country Status (6)

Country Link
US (1) US7355260B2 (enExample)
JP (1) JP4975618B2 (enExample)
KR (1) KR20070026690A (enExample)
CN (1) CN100576569C (enExample)
TW (1) TWI358835B (enExample)
WO (1) WO2006007143A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704143B1 (en) 2000-10-23 2004-03-09 Adc Telecommunications, Inc. Method and apparatus for adjusting an optical element to achieve a precise length
US7550804B2 (en) * 2006-03-27 2009-06-23 Freescale Semiconductor, Inc. Semiconductor device and method for forming the same
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
US8324705B2 (en) * 2008-05-27 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diodes having low-voltage and high-concentration rings
US7915704B2 (en) * 2009-01-26 2011-03-29 Freescale Semiconductor, Inc. Schottky diode
US7972913B2 (en) * 2009-05-28 2011-07-05 Freescale Semiconductor, Inc. Method for forming a Schottky diode
CN102347373B (zh) * 2010-08-03 2013-04-17 旺宏电子股份有限公司 肖特基二极管
US8878329B2 (en) * 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
CN102842596B (zh) * 2011-06-22 2015-05-20 旺宏电子股份有限公司 半导体结构及其制造方法
JP6087520B2 (ja) * 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子
US8592274B2 (en) * 2012-03-27 2013-11-26 Alpha And Omega Semiconductor Incorporated LDMOS with accumulation enhancement implant
EP3460856B1 (en) * 2017-09-26 2020-12-02 ams AG Schottky barrier diode with improved schottky contact for high voltages

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989058A (en) * 1985-11-27 1991-01-29 North American Philips Corp. Fast switching lateral insulated gate transistors
US6552406B1 (en) * 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050062B2 (ja) * 1982-03-19 1985-11-06 三菱電機株式会社 半導体集積回路装置
JPS5936264U (ja) * 1982-07-27 1984-03-07 サンケン電気株式会社 シヨツトキバリア半導体装置
JPS61296760A (ja) * 1985-06-26 1986-12-27 Hitachi Ltd 半導体装置
US5614755A (en) 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5483087A (en) 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
JP2001185740A (ja) * 1999-12-24 2001-07-06 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6617642B1 (en) * 2000-02-23 2003-09-09 Tripath Technology, Inc. Field effect transistor structure for driving inductive loads
JP4097417B2 (ja) 2001-10-26 2008-06-11 株式会社ルネサステクノロジ 半導体装置
JP4277496B2 (ja) * 2001-11-21 2009-06-10 富士電機デバイステクノロジー株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989058A (en) * 1985-11-27 1991-01-29 North American Philips Corp. Fast switching lateral insulated gate transistors
US6552406B1 (en) * 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks

Also Published As

Publication number Publication date
KR20070026690A (ko) 2007-03-08
JP2008505487A (ja) 2008-02-21
US20060001057A1 (en) 2006-01-05
TWI358835B (en) 2012-02-21
WO2006007143A3 (en) 2006-04-06
JP4975618B2 (ja) 2012-07-11
CN1977389A (zh) 2007-06-06
TW200614520A (en) 2006-05-01
WO2006007143A2 (en) 2006-01-19
US7355260B2 (en) 2008-04-08

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GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091230

Termination date: 20200519