JP2008091927A5 - - Google Patents

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Publication number
JP2008091927A5
JP2008091927A5 JP2007259038A JP2007259038A JP2008091927A5 JP 2008091927 A5 JP2008091927 A5 JP 2008091927A5 JP 2007259038 A JP2007259038 A JP 2007259038A JP 2007259038 A JP2007259038 A JP 2007259038A JP 2008091927 A5 JP2008091927 A5 JP 2008091927A5
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JP
Japan
Prior art keywords
cell array
region
distance
array region
conductive lines
Prior art date
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JP2007259038A
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English (en)
Japanese (ja)
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JP2008091927A (ja
JP5602986B2 (ja
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Publication date
Priority claimed from KR1020060097266A external-priority patent/KR100810616B1/ko
Application filed filed Critical
Publication of JP2008091927A publication Critical patent/JP2008091927A/ja
Publication of JP2008091927A5 publication Critical patent/JP2008091927A5/ja
Application granted granted Critical
Publication of JP5602986B2 publication Critical patent/JP5602986B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007259038A 2006-10-02 2007-10-02 微細線幅の導電性ラインを有する半導体素子 Active JP5602986B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060097266A KR100810616B1 (ko) 2006-10-02 2006-10-02 미세 선폭의 도전성 라인들을 갖는 반도체소자 및 그제조방법
KR10-2006-0097266 2006-10-02

Publications (3)

Publication Number Publication Date
JP2008091927A JP2008091927A (ja) 2008-04-17
JP2008091927A5 true JP2008091927A5 (enExample) 2010-11-18
JP5602986B2 JP5602986B2 (ja) 2014-10-08

Family

ID=39375665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007259038A Active JP5602986B2 (ja) 2006-10-02 2007-10-02 微細線幅の導電性ラインを有する半導体素子

Country Status (3)

Country Link
US (2) US7888720B2 (enExample)
JP (1) JP5602986B2 (enExample)
KR (1) KR100810616B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745876B2 (en) * 2007-02-21 2010-06-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
US8222159B2 (en) * 2008-08-25 2012-07-17 Elpida Memory, Inc. Manufacturing method of semiconductor device
KR101565798B1 (ko) * 2009-03-31 2015-11-05 삼성전자주식회사 콘택 패드와 도전 라인과의 일체형 구조를 가지는 반도체 소자
KR101645720B1 (ko) 2009-09-15 2016-08-05 삼성전자주식회사 패턴 구조물 및 이의 형성 방법.
KR20120126433A (ko) 2011-05-11 2012-11-21 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
KR20130078210A (ko) * 2011-12-30 2013-07-10 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
KR101950350B1 (ko) * 2012-07-19 2019-02-20 에스케이하이닉스 주식회사 반도체 장치 및 그의 제조 방법
US8921216B2 (en) * 2012-07-19 2014-12-30 SK Hynix Inc. Semiconductor device and method of fabricating the same
US20160351573A1 (en) * 2013-03-25 2016-12-01 Hiroshi Yoshino Semiconductor device and method for manufacturing the same
KR20230054562A (ko) 2021-10-15 2023-04-25 삼성전자주식회사 반도체 장치
CN116568024A (zh) * 2022-01-27 2023-08-08 芯盟科技有限公司 半导体结构及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置
JPH04274362A (ja) * 1991-02-28 1992-09-30 Mitsubishi Electric Corp 半導体記憶装置
JPH04352469A (ja) * 1991-05-30 1992-12-07 Nec Corp 半導体記憶装置
KR960008572B1 (en) * 1993-03-15 1996-06-28 Hyundai Electronics Ind Dram device
JP2006245625A (ja) 1997-06-20 2006-09-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3281304B2 (ja) * 1997-11-28 2002-05-13 株式会社東芝 半導体集積回路装置
JP2000019709A (ja) * 1998-07-03 2000-01-21 Hitachi Ltd 半導体装置及びパターン形成方法
JP3420089B2 (ja) * 1998-11-04 2003-06-23 Ｎｅｃエレクトロニクス株式会社 電子デバイス並びに半導体装置、及び電極形成方法
JP2000307084A (ja) * 1999-04-23 2000-11-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP4936582B2 (ja) * 2000-07-28 2012-05-23 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4103497B2 (ja) 2002-04-18 2008-06-18 ソニー株式会社 記憶装置とその製造方法および使用方法、半導体装置とその製造方法
KR100454131B1 (ko) * 2002-06-05 2004-10-26 삼성전자주식회사 라인형 패턴을 갖는 반도체 소자 및 그 레이아웃 방법
JP2004134702A (ja) 2002-10-15 2004-04-30 Renesas Technology Corp 不揮発性半導体記憶装置
DE10260185B4 (de) 2002-12-20 2007-04-12 Infineon Technologies Ag Halbleiterspeicher mit vertikalen Charge-trapping-Speicherzellen und Verfahren zu seiner Herstellung
KR100539276B1 (ko) 2003-04-02 2005-12-27 삼성전자주식회사 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법
JP4498088B2 (ja) * 2004-10-07 2010-07-07 株式会社東芝 半導体記憶装置およびその製造方法
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features

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