JP2008244453A5 - - Google Patents

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Publication number
JP2008244453A5
JP2008244453A5 JP2008039487A JP2008039487A JP2008244453A5 JP 2008244453 A5 JP2008244453 A5 JP 2008244453A5 JP 2008039487 A JP2008039487 A JP 2008039487A JP 2008039487 A JP2008039487 A JP 2008039487A JP 2008244453 A5 JP2008244453 A5 JP 2008244453A5
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JP
Japan
Prior art keywords
conductive layer
conductive
memory element
film
forming
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JP2008039487A
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Japanese (ja)
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JP2008244453A (ja
JP5210656B2 (ja
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Priority claimed from JP2008039487A external-priority patent/JP5210656B2/ja
Publication of JP2008244453A publication Critical patent/JP2008244453A/ja
Publication of JP2008244453A5 publication Critical patent/JP2008244453A5/ja
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Publication of JP5210656B2 publication Critical patent/JP5210656B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008039487A 2007-02-26 2008-02-21 記憶素子及びその作製方法 Expired - Fee Related JP5210656B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007045558 2007-02-26
JP2007045558 2007-02-26
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Publications (3)

Publication Number Publication Date
JP2008244453A JP2008244453A (ja) 2008-10-09
JP2008244453A5 true JP2008244453A5 (enExample) 2011-02-17
JP5210656B2 JP5210656B2 (ja) 2013-06-12

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ID=39715698

Family Applications (1)

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JP2008039487A Expired - Fee Related JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Country Status (3)

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US (3) US8283724B2 (enExample)
JP (1) JP5210656B2 (enExample)
CN (1) CN101257088B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
GB2543528B (en) * 2015-10-20 2020-01-15 Advanced Risc Mach Ltd Memory circuit
CN106057823B (zh) * 2016-07-29 2019-05-10 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
US11621345B2 (en) * 2018-08-14 2023-04-04 Pawan Tyagi Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device
US10833162B2 (en) * 2018-08-14 2020-11-10 Pawan Tyagi Trenched bottom electrode and liftoff based molecular devices

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