JP5210656B2 - 記憶素子及びその作製方法 - Google Patents

記憶素子及びその作製方法 Download PDF

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Publication number
JP5210656B2
JP5210656B2 JP2008039487A JP2008039487A JP5210656B2 JP 5210656 B2 JP5210656 B2 JP 5210656B2 JP 2008039487 A JP2008039487 A JP 2008039487A JP 2008039487 A JP2008039487 A JP 2008039487A JP 5210656 B2 JP5210656 B2 JP 5210656B2
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conductive layer
conductive
electrode
layer
memory element
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Expired - Fee Related
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Japanese (ja)
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JP2008244453A (ja
JP2008244453A5 (enExample
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吉晴 平形
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2008244453A5 publication Critical patent/JP2008244453A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2008039487A 2007-02-26 2008-02-21 記憶素子及びその作製方法 Expired - Fee Related JP5210656B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007045558 2007-02-26
JP2007045558 2007-02-26
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

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JP2008244453A JP2008244453A (ja) 2008-10-09
JP2008244453A5 JP2008244453A5 (enExample) 2011-02-17
JP5210656B2 true JP5210656B2 (ja) 2013-06-12

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US (3) US8283724B2 (enExample)
JP (1) JP5210656B2 (enExample)
CN (1) CN101257088B (enExample)

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JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
GB2543528B (en) 2015-10-20 2020-01-15 Advanced Risc Mach Ltd Memory circuit
CN106057823B (zh) * 2016-07-29 2019-05-10 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
US11621345B2 (en) * 2018-08-14 2023-04-04 Pawan Tyagi Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device
US10833162B2 (en) * 2018-08-14 2020-11-10 Pawan Tyagi Trenched bottom electrode and liftoff based molecular devices

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Also Published As

Publication number Publication date
US20130217201A1 (en) 2013-08-22
CN101257088B (zh) 2011-10-05
CN101257088A (zh) 2008-09-03
JP2008244453A (ja) 2008-10-09
US8283724B2 (en) 2012-10-09
US8753967B2 (en) 2014-06-17
US20080205132A1 (en) 2008-08-28
US8431997B2 (en) 2013-04-30
US20130010534A1 (en) 2013-01-10

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