JP2010062265A5 - - Google Patents
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- Publication number
- JP2010062265A5 JP2010062265A5 JP2008225157A JP2008225157A JP2010062265A5 JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5 JP 2008225157 A JP2008225157 A JP 2008225157A JP 2008225157 A JP2008225157 A JP 2008225157A JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- contact
- structure portion
- variable resistor
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 2
- 230000002441 reversible effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225157A JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225157A JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010062265A JP2010062265A (ja) | 2010-03-18 |
| JP2010062265A5 true JP2010062265A5 (enExample) | 2010-11-18 |
Family
ID=42188770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008225157A Pending JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010062265A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8389972B2 (en) | 2009-09-14 | 2013-03-05 | Panasonic Corporation | Nonvolatile memory device and method of manufacturing the same |
| US9627443B2 (en) * | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
| JP5404977B2 (ja) * | 2011-09-27 | 2014-02-05 | パナソニック株式会社 | 不揮発性記憶素子、不揮発性記憶装置及びそれらの製造方法 |
| US8853099B2 (en) * | 2011-12-16 | 2014-10-07 | Intermolecular, Inc. | Nonvolatile resistive memory element with a metal nitride containing switching layer |
| US9548115B2 (en) | 2012-03-16 | 2017-01-17 | Nec Corporation | Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element |
| US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
| JP5555821B1 (ja) * | 2012-11-14 | 2014-07-23 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
| US9985203B2 (en) * | 2013-11-15 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company | Resistive random access memory (RRAM) with improved forming voltage characteristics and method for making |
| US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
| US20160181517A1 (en) * | 2014-12-23 | 2016-06-23 | Silicon Storage Technology, Inc. | Geometrically Enhanced Resistive Random Access Memory (RRAM) Cell And Method Of Forming Same |
| WO2017170149A1 (ja) * | 2016-03-30 | 2017-10-05 | 日本電気株式会社 | 抵抗変化素子、および抵抗変化素子の製造方法 |
| KR102421726B1 (ko) * | 2017-09-25 | 2022-07-15 | 삼성전자주식회사 | 이미지 센서 |
| US11094883B2 (en) | 2019-10-31 | 2021-08-17 | International Business Machines Corporation | Structure and method to fabricate resistive memory with vertical pre-determined filament |
| JP2021129071A (ja) * | 2020-02-17 | 2021-09-02 | キオクシア株式会社 | 半導体記憶装置および半導体記憶装置の製造方法 |
| CN115377286A (zh) * | 2022-06-21 | 2022-11-22 | 昕原半导体(杭州)有限公司 | 阻变存储器及其制造方法和电子装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101100427B1 (ko) * | 2005-08-24 | 2011-12-30 | 삼성전자주식회사 | 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법 |
| JP5217259B2 (ja) * | 2007-06-07 | 2013-06-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
-
2008
- 2008-09-02 JP JP2008225157A patent/JP2010062265A/ja active Pending
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