JP2013520839A5 - - Google Patents

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Publication number
JP2013520839A5
JP2013520839A5 JP2012555025A JP2012555025A JP2013520839A5 JP 2013520839 A5 JP2013520839 A5 JP 2013520839A5 JP 2012555025 A JP2012555025 A JP 2012555025A JP 2012555025 A JP2012555025 A JP 2012555025A JP 2013520839 A5 JP2013520839 A5 JP 2013520839A5
Authority
JP
Japan
Prior art keywords
material layer
conductive material
electrically insulating
insulating material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012555025A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013520839A (ja
Filing date
Publication date
Priority claimed from US12/713,264 external-priority patent/US8803203B2/en
Application filed filed Critical
Publication of JP2013520839A publication Critical patent/JP2013520839A/ja
Publication of JP2013520839A5 publication Critical patent/JP2013520839A5/ja
Pending legal-status Critical Current

Links

JP2012555025A 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ Pending JP2013520839A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/713,264 2010-02-26
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile
PCT/US2011/024310 WO2011106165A1 (en) 2010-02-26 2011-02-10 Vertical transistor including reentrant profile

Publications (2)

Publication Number Publication Date
JP2013520839A JP2013520839A (ja) 2013-06-06
JP2013520839A5 true JP2013520839A5 (enExample) 2014-02-06

Family

ID=43875263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012555025A Pending JP2013520839A (ja) 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ

Country Status (7)

Country Link
US (2) US8803203B2 (enExample)
EP (1) EP2539924B1 (enExample)
JP (1) JP2013520839A (enExample)
KR (1) KR20120114372A (enExample)
CN (1) CN102782821B (enExample)
BR (1) BR112012019907A2 (enExample)
WO (1) WO2011106165A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
JP6018607B2 (ja) * 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

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