JP2013520839A - 内側にへこんだ形状を含んだ縦型トランジスタ - Google Patents

内側にへこんだ形状を含んだ縦型トランジスタ Download PDF

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Publication number
JP2013520839A
JP2013520839A JP2012555025A JP2012555025A JP2013520839A JP 2013520839 A JP2013520839 A JP 2013520839A JP 2012555025 A JP2012555025 A JP 2012555025A JP 2012555025 A JP2012555025 A JP 2012555025A JP 2013520839 A JP2013520839 A JP 2013520839A
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Japan
Prior art keywords
material layer
substrate
layer
conductive material
transistor
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JP2012555025A
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English (en)
Japanese (ja)
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JP2013520839A5 (enExample
Inventor
ウィリアム トゥット，リー
フォレスター ネルソン，シェルビー
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イーストマン コダック カンパニー
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Publication of JP2013520839A publication Critical patent/JP2013520839A/ja
Publication of JP2013520839A5 publication Critical patent/JP2013520839A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012555025A 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ Pending JP2013520839A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/713,264 2010-02-26
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile
PCT/US2011/024310 WO2011106165A1 (en) 2010-02-26 2011-02-10 Vertical transistor including reentrant profile

Publications (2)

Publication Number Publication Date
JP2013520839A true JP2013520839A (ja) 2013-06-06
JP2013520839A5 JP2013520839A5 (enExample) 2014-02-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012555025A Pending JP2013520839A (ja) 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ

Country Status (7)

Country Link
US (2) US8803203B2 (enExample)
EP (1) EP2539924B1 (enExample)
JP (1) JP2013520839A (enExample)
KR (1) KR20120114372A (enExample)
CN (1) CN102782821B (enExample)
BR (1) BR112012019907A2 (enExample)
WO (1) WO2011106165A1 (enExample)

Cited By (1)

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JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器

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EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
JP6018607B2 (ja) * 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

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JPH08153878A (ja) * 1994-11-29 1996-06-11 Sony Corp 薄膜トランジスタ及びその製造方法
JP2008091379A (ja) * 2006-09-29 2008-04-17 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法

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JPH05144744A (ja) 1991-11-18 1993-06-11 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成方法
KR970007965B1 (en) 1994-05-12 1997-05-19 Lg Semicon Co Ltd Structure and fabrication method of tft
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH02140863U (enExample) * 1989-04-26 1990-11-26
JPH08153878A (ja) * 1994-11-29 1996-06-11 Sony Corp 薄膜トランジスタ及びその製造方法
JP2008091379A (ja) * 2006-09-29 2008-04-17 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器

Also Published As

Publication number Publication date
BR112012019907A2 (pt) 2016-05-10
US20140266402A1 (en) 2014-09-18
EP2539924A1 (en) 2013-01-02
WO2011106165A1 (en) 2011-09-01
CN102782821A (zh) 2012-11-14
US20110210783A1 (en) 2011-09-01
KR20120114372A (ko) 2012-10-16
CN102782821B (zh) 2016-01-13
EP2539924B1 (en) 2019-12-11
US8803203B2 (en) 2014-08-12
US9337828B2 (en) 2016-05-10

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