BR112012019907A2 - transistor, e, método para atuar um dispositivo semicondutor - Google Patents

transistor, e, método para atuar um dispositivo semicondutor

Info

Publication number
BR112012019907A2
BR112012019907A2 BR112012019907A BR112012019907A BR112012019907A2 BR 112012019907 A2 BR112012019907 A2 BR 112012019907A2 BR 112012019907 A BR112012019907 A BR 112012019907A BR 112012019907 A BR112012019907 A BR 112012019907A BR 112012019907 A2 BR112012019907 A2 BR 112012019907A2
Authority
BR
Brazil
Prior art keywords
transistor
acting
semiconductor device
material layer
substrate
Prior art date
Application number
BR112012019907A
Other languages
English (en)
Portuguese (pt)
Inventor
Lee William Tutt
Shelby Forrester Nelson
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of BR112012019907A2 publication Critical patent/BR112012019907A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
BR112012019907A 2010-02-26 2011-02-10 transistor, e, método para atuar um dispositivo semicondutor BR112012019907A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile
PCT/US2011/024310 WO2011106165A1 (en) 2010-02-26 2011-02-10 Vertical transistor including reentrant profile

Publications (1)

Publication Number Publication Date
BR112012019907A2 true BR112012019907A2 (pt) 2016-05-10

Family

ID=43875263

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012019907A BR112012019907A2 (pt) 2010-02-26 2011-02-10 transistor, e, método para atuar um dispositivo semicondutor

Country Status (7)

Country Link
US (2) US8803203B2 (enExample)
EP (1) EP2539924B1 (enExample)
JP (1) JP2013520839A (enExample)
KR (1) KR20120114372A (enExample)
CN (1) CN102782821B (enExample)
BR (1) BR112012019907A2 (enExample)
WO (1) WO2011106165A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
JP6018607B2 (ja) * 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

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EP0344292B1 (en) 1987-12-02 1997-04-23 Advanced Micro Devices, Inc. A process of fabricating self-aligned semiconductor devices
JPH02140863A (ja) 1988-11-22 1990-05-30 Nec Corp 分散型エディタにおける端末側エディタのテキスト送信方式
JPH02140863U (enExample) 1989-04-26 1990-11-26
JPH05144744A (ja) 1991-11-18 1993-06-11 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成方法
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US6924517B2 (en) * 2003-08-26 2005-08-02 International Business Machines Corporation Thin channel FET with recessed source/drains and extensions
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JP3983222B2 (ja) 2004-01-13 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
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Also Published As

Publication number Publication date
US20140266402A1 (en) 2014-09-18
EP2539924A1 (en) 2013-01-02
WO2011106165A1 (en) 2011-09-01
CN102782821A (zh) 2012-11-14
US20110210783A1 (en) 2011-09-01
KR20120114372A (ko) 2012-10-16
JP2013520839A (ja) 2013-06-06
CN102782821B (zh) 2016-01-13
EP2539924B1 (en) 2019-12-11
US8803203B2 (en) 2014-08-12
US9337828B2 (en) 2016-05-10

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]