KR20120114372A - 요각 프로파일을 포함하는 수직 트랜지스터 - Google Patents

요각 프로파일을 포함하는 수직 트랜지스터 Download PDF

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Publication number
KR20120114372A
KR20120114372A KR1020127022265A KR20127022265A KR20120114372A KR 20120114372 A KR20120114372 A KR 20120114372A KR 1020127022265 A KR1020127022265 A KR 1020127022265A KR 20127022265 A KR20127022265 A KR 20127022265A KR 20120114372 A KR20120114372 A KR 20120114372A
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KR
South Korea
Prior art keywords
layer
material layer
substrate
conductive material
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127022265A
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English (en)
Korean (ko)
Inventor
리 윌리암 터트
쉘비 포레스터 넬슨
Original Assignee
이스트맨 코닥 캄파니
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Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20120114372A publication Critical patent/KR20120114372A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020127022265A 2010-02-26 2011-02-10 요각 프로파일을 포함하는 수직 트랜지스터 Withdrawn KR20120114372A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/713,264 2010-02-26
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile

Publications (1)

Publication Number Publication Date
KR20120114372A true KR20120114372A (ko) 2012-10-16

Family

ID=43875263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127022265A Withdrawn KR20120114372A (ko) 2010-02-26 2011-02-10 요각 프로파일을 포함하는 수직 트랜지스터

Country Status (7)

Country Link
US (2) US8803203B2 (enExample)
EP (1) EP2539924B1 (enExample)
JP (1) JP2013520839A (enExample)
KR (1) KR20120114372A (enExample)
CN (1) CN102782821B (enExample)
BR (1) BR112012019907A2 (enExample)
WO (1) WO2011106165A1 (enExample)

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US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
JP6018607B2 (ja) * 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

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JPH02140863U (enExample) 1989-04-26 1990-11-26
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KR100896631B1 (ko) 2007-08-13 2009-05-08 성균관대학교산학협력단 수직 실린더형 트랜지스터의 제조방법 및 이에 의해 제조된수직 실린더형 트랜지스터
JP2009130165A (ja) * 2007-11-26 2009-06-11 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
KR100960928B1 (ko) * 2008-01-02 2010-06-07 주식회사 하이닉스반도체 수직형 트랜지스터 및 그의 형성방법
JP2010040580A (ja) 2008-07-31 2010-02-18 Sanyo Electric Co Ltd 有機薄膜デバイスの製造方法及び有機薄膜デバイス
US8637355B2 (en) * 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile

Also Published As

Publication number Publication date
BR112012019907A2 (pt) 2016-05-10
US20140266402A1 (en) 2014-09-18
EP2539924A1 (en) 2013-01-02
WO2011106165A1 (en) 2011-09-01
CN102782821A (zh) 2012-11-14
US20110210783A1 (en) 2011-09-01
JP2013520839A (ja) 2013-06-06
CN102782821B (zh) 2016-01-13
EP2539924B1 (en) 2019-12-11
US8803203B2 (en) 2014-08-12
US9337828B2 (en) 2016-05-10

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Date Code Title Description
PA0105 International application

Patent event date: 20120824

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid