CN102782821B - 包括凹进轮廓的垂直晶体管 - Google Patents

包括凹进轮廓的垂直晶体管 Download PDF

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Publication number
CN102782821B
CN102782821B CN201180010647.7A CN201180010647A CN102782821B CN 102782821 B CN102782821 B CN 102782821B CN 201180010647 A CN201180010647 A CN 201180010647A CN 102782821 B CN102782821 B CN 102782821B
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CN
China
Prior art keywords
material layer
layer
conductive material
substrate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180010647.7A
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English (en)
Chinese (zh)
Other versions
CN102782821A (zh
Inventor
L·W·塔特
S·F·纳尔逊
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Eastman Kodak Co
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Eastman Kodak Co
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Publication of CN102782821A publication Critical patent/CN102782821A/zh
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Publication of CN102782821B publication Critical patent/CN102782821B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201180010647.7A 2010-02-26 2011-02-10 包括凹进轮廓的垂直晶体管 Expired - Fee Related CN102782821B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/713,264 2010-02-26
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile
PCT/US2011/024310 WO2011106165A1 (en) 2010-02-26 2011-02-10 Vertical transistor including reentrant profile

Publications (2)

Publication Number Publication Date
CN102782821A CN102782821A (zh) 2012-11-14
CN102782821B true CN102782821B (zh) 2016-01-13

Family

ID=43875263

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180010647.7A Expired - Fee Related CN102782821B (zh) 2010-02-26 2011-02-10 包括凹进轮廓的垂直晶体管

Country Status (7)

Country Link
US (2) US8803203B2 (enExample)
EP (1) EP2539924B1 (enExample)
JP (1) JP2013520839A (enExample)
KR (1) KR20120114372A (enExample)
CN (1) CN102782821B (enExample)
BR (1) BR112012019907A2 (enExample)
WO (1) WO2011106165A1 (enExample)

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US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
EP2661776A2 (en) * 2011-01-07 2013-11-13 Eastman Kodak Company Transistor including multiple reentrant profiles
US8962988B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Integrated semiconductor solar cell package
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

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US5547883A (en) * 1994-07-21 1996-08-20 Lg Semicon Co., Ltd. Method for fabricating thin film transistor
US5780911A (en) * 1995-11-29 1998-07-14 Lg Semicon Co., Ltd. Thin film transistor and method for fabricating the same
US6018176A (en) * 1995-05-26 2000-01-25 Samsung Electronics Co., Ltd. Vertical transistor and memory cell
CN1591899A (zh) * 2003-08-26 2005-03-09 国际商业机器公司 场效应晶体管、包括fet的集成电路及其形成方法
US20090194826A1 (en) * 2003-10-22 2009-08-06 Commissariat A L'energie Atomique Field-effect microelectronic device, capable of forming one or several transistor channels

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JPH02140863A (ja) 1988-11-22 1990-05-30 Nec Corp 分散型エディタにおける端末側エディタのテキスト送信方式
JPH02140863U (enExample) 1989-04-26 1990-11-26
JPH05144744A (ja) 1991-11-18 1993-06-11 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成方法
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US7789961B2 (en) 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
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US8637355B2 (en) * 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4437068A1 (de) * 1994-05-12 1995-11-23 Gold Star Electronics Dünnfilmtransistor und Verfahren zu seiner Herstellung
US5547883A (en) * 1994-07-21 1996-08-20 Lg Semicon Co., Ltd. Method for fabricating thin film transistor
US6018176A (en) * 1995-05-26 2000-01-25 Samsung Electronics Co., Ltd. Vertical transistor and memory cell
US5780911A (en) * 1995-11-29 1998-07-14 Lg Semicon Co., Ltd. Thin film transistor and method for fabricating the same
CN1591899A (zh) * 2003-08-26 2005-03-09 国际商业机器公司 场效应晶体管、包括fet的集成电路及其形成方法
US20090194826A1 (en) * 2003-10-22 2009-08-06 Commissariat A L'energie Atomique Field-effect microelectronic device, capable of forming one or several transistor channels

Also Published As

Publication number Publication date
JP2013520839A (ja) 2013-06-06
BR112012019907A2 (pt) 2016-05-10
CN102782821A (zh) 2012-11-14
US8803203B2 (en) 2014-08-12
EP2539924A1 (en) 2013-01-02
KR20120114372A (ko) 2012-10-16
US20110210783A1 (en) 2011-09-01
WO2011106165A1 (en) 2011-09-01
US9337828B2 (en) 2016-05-10
EP2539924B1 (en) 2019-12-11
US20140266402A1 (en) 2014-09-18

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Granted publication date: 20160113

Termination date: 20200210