JP2008244447A5 - - Google Patents
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- Publication number
- JP2008244447A5 JP2008244447A5 JP2008032526A JP2008032526A JP2008244447A5 JP 2008244447 A5 JP2008244447 A5 JP 2008244447A5 JP 2008032526 A JP2008032526 A JP 2008032526A JP 2008032526 A JP2008032526 A JP 2008032526A JP 2008244447 A5 JP2008244447 A5 JP 2008244447A5
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- thin film
- organic solvent
- manufacturing
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims 23
- 239000010409 thin film Substances 0.000 claims 14
- 239000003960 organic solvent Substances 0.000 claims 11
- 239000010408 film Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 238000009835 boiling Methods 0.000 claims 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 4
- 238000001039 wet etching Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000000725 suspension Substances 0.000 claims 2
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008032526A JP5604034B2 (ja) | 2007-02-26 | 2008-02-14 | 発光装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007045146 | 2007-02-26 | ||
| JP2007045146 | 2007-02-26 | ||
| JP2008032526A JP5604034B2 (ja) | 2007-02-26 | 2008-02-14 | 発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008244447A JP2008244447A (ja) | 2008-10-09 |
| JP2008244447A5 true JP2008244447A5 (enExample) | 2011-03-31 |
| JP5604034B2 JP5604034B2 (ja) | 2014-10-08 |
Family
ID=39716390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008032526A Expired - Fee Related JP5604034B2 (ja) | 2007-02-26 | 2008-02-14 | 発光装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080206997A1 (enExample) |
| JP (1) | JP5604034B2 (enExample) |
| KR (1) | KR20080079205A (enExample) |
| CN (1) | CN101256956A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5178569B2 (ja) * | 2009-02-13 | 2013-04-10 | 株式会社東芝 | 固体撮像装置 |
| CN106475289B (zh) * | 2011-09-14 | 2019-09-06 | 玛太克司马特股份有限公司 | Led制造方法、led制造设备和led |
| CN102646595A (zh) * | 2011-11-11 | 2012-08-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示器件 |
| JP7107106B2 (ja) * | 2018-08-30 | 2022-07-27 | 富士電機株式会社 | 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法 |
| TWI864232B (zh) * | 2020-02-19 | 2024-12-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理系統 |
| KR102826508B1 (ko) * | 2020-06-02 | 2025-06-27 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2821517A (en) * | 1954-03-08 | 1958-01-28 | Westinghouse Electric Corp | Polyesteramide-siloxane resin and insulated product prepared therefrom |
| US4507384A (en) * | 1983-04-18 | 1985-03-26 | Nippon Telegraph & Telephone Public Corporation | Pattern forming material and method for forming pattern therewith |
| US4668755A (en) * | 1984-08-10 | 1987-05-26 | General Electric Company | High molecular weight siloxane polyimides, intermediates therefor, and methods for their preparation and use |
| US5137751A (en) * | 1990-03-09 | 1992-08-11 | Amoco Corporation | Process for making thick multilayers of polyimide |
| US5183534A (en) * | 1990-03-09 | 1993-02-02 | Amoco Corporation | Wet-etch process and composition |
| JPH05218008A (ja) * | 1992-02-04 | 1993-08-27 | Hitachi Chem Co Ltd | ポリイミド系樹脂膜パターンの製造法 |
| JPH0669186A (ja) * | 1992-05-29 | 1994-03-11 | Toray Ind Inc | シリカ系被膜のパターン加工方法 |
| US5985704A (en) * | 1993-07-27 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JPH07133350A (ja) * | 1993-11-12 | 1995-05-23 | Fujitsu Ltd | ポリパーフルオロアルキレンシロキサン樹脂とその製造方法および層間絶縁膜の製造方法 |
| CN1125481A (zh) * | 1994-03-11 | 1996-06-26 | 川崎制铁株式会社 | 评价用于形成绝缘膜的硅氧烷的方法、形成绝缘膜的涂布液及其制备方法、半导体器件用绝缘膜成型方法以及采用绝缘膜成膜法制备半导体器件的方法 |
| JPH08222550A (ja) * | 1995-02-16 | 1996-08-30 | Sony Corp | 塗布絶縁膜の平坦化方法 |
| JPH1083080A (ja) * | 1996-06-26 | 1998-03-31 | Dow Corning Asia Kk | 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法 |
| JPH1116883A (ja) * | 1997-06-20 | 1999-01-22 | Dow Chem Japan Ltd | ベンゾシクロブテン樹脂層のウェットエッチング処理方法 |
| JP3301370B2 (ja) * | 1997-12-11 | 2002-07-15 | 信越化学工業株式会社 | ポリシランパターン形成基板の製造方法 |
| TWI234787B (en) * | 1998-05-26 | 2005-06-21 | Tokyo Ohka Kogyo Co Ltd | Silica-based coating film on substrate and coating solution therefor |
| WO2002023629A2 (en) * | 2000-09-13 | 2002-03-21 | Shipley Company, L.L.C. | Electronic device manufacture |
| JP2003086372A (ja) * | 2001-09-10 | 2003-03-20 | Toshiba Corp | 有機エレクトロルミネッセンス素子の製造方法 |
| JP2003100865A (ja) * | 2001-09-21 | 2003-04-04 | Catalysts & Chem Ind Co Ltd | 半導体基板の製造方法および半導体基板 |
| JP2003179055A (ja) * | 2001-12-11 | 2003-06-27 | Hitachi Chem Co Ltd | 膜形成方法及び半導体素子の製造方法 |
| US7060634B2 (en) * | 2002-01-17 | 2006-06-13 | Silecs Oy | Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications |
| JP4741177B2 (ja) * | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7492090B2 (en) * | 2003-09-19 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US7520790B2 (en) * | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
| CN100499035C (zh) * | 2003-10-03 | 2009-06-10 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| WO2005034194A2 (en) * | 2003-10-08 | 2005-04-14 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
| US7314785B2 (en) * | 2003-10-24 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US7259110B2 (en) * | 2004-04-28 | 2007-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device and semiconductor device |
| US7687404B2 (en) * | 2004-05-14 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8217396B2 (en) * | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
| JP4798330B2 (ja) * | 2004-09-03 | 2011-10-19 | Jsr株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
| US7439111B2 (en) * | 2004-09-29 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7875506B2 (en) * | 2004-10-13 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Etching method and manufacturing method of semiconductor device |
| US7547627B2 (en) * | 2004-11-29 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR20060068348A (ko) * | 2004-12-16 | 2006-06-21 | 삼성코닝 주식회사 | 실록산계 중합체 및 상기 중합체를 이용한 절연막 제조방법 |
| JP4586655B2 (ja) * | 2005-07-05 | 2010-11-24 | 東レ株式会社 | 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子 |
| JP4687315B2 (ja) * | 2005-08-04 | 2011-05-25 | 東レ株式会社 | 感光性樹脂組成物、それから形成された硬化膜、および硬化膜を有する素子 |
| JP5208405B2 (ja) * | 2005-12-27 | 2013-06-12 | 東京エレクトロン株式会社 | 基板の処理方法及びプログラム |
-
2008
- 2008-02-11 US US12/029,079 patent/US20080206997A1/en not_active Abandoned
- 2008-02-14 JP JP2008032526A patent/JP5604034B2/ja not_active Expired - Fee Related
- 2008-02-25 KR KR1020080016617A patent/KR20080079205A/ko not_active Withdrawn
- 2008-02-26 CN CNA2008100810855A patent/CN101256956A/zh active Pending
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