JP2015188084A5 - - Google Patents

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Publication number
JP2015188084A5
JP2015188084A5 JP2015050523A JP2015050523A JP2015188084A5 JP 2015188084 A5 JP2015188084 A5 JP 2015188084A5 JP 2015050523 A JP2015050523 A JP 2015050523A JP 2015050523 A JP2015050523 A JP 2015050523A JP 2015188084 A5 JP2015188084 A5 JP 2015188084A5
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JP
Japan
Prior art keywords
semiconductor
conductor
insulator
cvd method
semiconductor device
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JP2015050523A
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English (en)
Japanese (ja)
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JP6543053B2 (ja
JP2015188084A (ja
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Priority claimed from JP2015050523A external-priority patent/JP6543053B2/ja
Publication of JP2015188084A publication Critical patent/JP2015188084A/ja
Publication of JP2015188084A5 publication Critical patent/JP2015188084A5/ja
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Publication of JP6543053B2 publication Critical patent/JP6543053B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015050523A 2014-03-14 2015-03-13 半導体装置の作製方法 Expired - Fee Related JP6543053B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015050523A JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014051720 2014-03-14
JP2014051720 2014-03-14
JP2015050523A JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法

Related Child Applications (1)

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JP2019111150A Division JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2015188084A JP2015188084A (ja) 2015-10-29
JP2015188084A5 true JP2015188084A5 (enExample) 2018-04-19
JP6543053B2 JP6543053B2 (ja) 2019-07-10

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ID=54069835

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JP2015050523A Expired - Fee Related JP6543053B2 (ja) 2014-03-14 2015-03-13 半導体装置の作製方法
JP2019111150A Active JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

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JP2019111150A Active JP6761514B2 (ja) 2014-03-14 2019-06-14 半導体装置の作製方法

Country Status (2)

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US (1) US20150263140A1 (enExample)
JP (2) JP6543053B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102640383B1 (ko) 2016-03-22 2024-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
CN109075209B (zh) 2016-05-20 2022-05-27 株式会社半导体能源研究所 半导体装置或包括该半导体装置的显示装置
JP2019102530A (ja) * 2017-11-29 2019-06-24 東芝メモリ株式会社 半導体装置およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0384963A (ja) * 1989-08-29 1991-04-10 Casio Comput Co Ltd 薄膜トランジスタ
JP2004128217A (ja) * 2002-10-02 2004-04-22 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
JP5562603B2 (ja) * 2008-09-30 2014-07-30 株式会社半導体エネルギー研究所 表示装置
WO2010125986A1 (en) * 2009-05-01 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
TWI559501B (zh) * 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8685787B2 (en) * 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9437743B2 (en) * 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
KR101680768B1 (ko) * 2010-12-10 2016-11-29 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자장치
TWI521612B (zh) * 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8847220B2 (en) * 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20230004930A (ko) * 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI478344B (zh) * 2012-07-04 2015-03-21 E Ink Holdings Inc 電晶體與其製造方法
WO2014021442A1 (en) * 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device

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