JP2008153678A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2008153678A
JP2008153678A JP2008000095A JP2008000095A JP2008153678A JP 2008153678 A JP2008153678 A JP 2008153678A JP 2008000095 A JP2008000095 A JP 2008000095A JP 2008000095 A JP2008000095 A JP 2008000095A JP 2008153678 A JP2008153678 A JP 2008153678A
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JP
Japan
Prior art keywords
semiconductor memory
gate
erase
memory device
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008000095A
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English (en)
Japanese (ja)
Inventor
Masaru Hisamoto
大 久本
Kan Yasui
感 安井
Tetsuya Ishimaru
哲也 石丸
Shinichiro Kimura
紳一郎 木村
Daisuke Okada
大介 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2008000095A priority Critical patent/JP2008153678A/ja
Publication of JP2008153678A publication Critical patent/JP2008153678A/ja
Pending legal-status Critical Current

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008000095A 2004-05-27 2008-01-04 半導体記憶装置 Pending JP2008153678A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008000095A JP2008153678A (ja) 2004-05-27 2008-01-04 半導体記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JP2008000095A JP2008153678A (ja) 2004-05-27 2008-01-04 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005062063A Division JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011034239A Division JP5080663B2 (ja) 2004-05-27 2011-02-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
JP2008153678A true JP2008153678A (ja) 2008-07-03

Family

ID=35632475

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008000095A Pending JP2008153678A (ja) 2004-05-27 2008-01-04 半導体記憶装置
JP2011034239A Active JP5080663B2 (ja) 2004-05-27 2011-02-21 半導体記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011034239A Active JP5080663B2 (ja) 2004-05-27 2011-02-21 半導体記憶装置

Country Status (2)

Country Link
JP (2) JP2008153678A (zh)
CN (1) CN100595923C (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223552B2 (en) 2008-09-30 2012-07-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for driving the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
JP5755909B2 (ja) * 2011-03-09 2015-07-29 ラピスセミコンダクタ株式会社 半導体不揮発性メモリ及びデータ書き込み方法
KR101979299B1 (ko) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법
KR102396743B1 (ko) * 2018-07-16 2022-05-12 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 그것의 동작 방법
CN110838328B (zh) * 2018-08-17 2021-09-10 北京兆易创新科技股份有限公司 一种存储器的擦除方法和系统
US10741260B1 (en) * 2019-05-28 2020-08-11 Micron Technology, Inc. Systems and methods providing improved calibration of memory control voltage

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
JPH03222196A (ja) * 1990-01-26 1991-10-01 Hitachi Ltd 不揮発性半導体記憶装置
JP2984045B2 (ja) * 1990-09-27 1999-11-29 沖電気工業株式会社 半導体記憶装置
JPH05174586A (ja) * 1991-12-24 1993-07-13 Kawasaki Steel Corp 電気的消去可能な不揮発性メモリ
JPH0729385A (ja) * 1993-07-12 1995-01-31 Hitachi Ltd Ｅｅｐｒｏｍ装置
JP2987105B2 (ja) * 1996-06-10 1999-12-06 ハライ エリヤホウ フラッシュＥＥｐｒｏｍメモリシステムとその使用方法
JPH113597A (ja) * 1997-04-15 1999-01-06 Toshiba Microelectron Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法
JPH11220111A (ja) * 1998-01-29 1999-08-10 Sanyo Electric Co Ltd 不揮発性半導体記憶装置
JP4550206B2 (ja) * 1999-02-19 2010-09-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の駆動方法
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
JP2002260388A (ja) * 2001-03-02 2002-09-13 Sony Corp 内容アドレス可能な半導体記憶装置とその動作方法
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
TW546840B (en) * 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP3632001B2 (ja) * 2001-12-28 2005-03-23 サンディスク コーポレイション フラッシュＥＥｐｒｏｍメモリシステムとその使用方法
JP4052857B2 (ja) * 2002-03-18 2008-02-27 株式会社日立製作所 不揮発性半導体メモリアレイ及び該メモリアレイリード方法
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2004087770A (ja) * 2002-08-27 2004-03-18 Sony Corp 不揮発性半導体メモリ装置およびその電荷注入方法
JP4372406B2 (ja) * 2002-11-11 2009-11-25 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
JP2007272952A (ja) * 2006-03-30 2007-10-18 Renesas Technology Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223552B2 (en) 2008-09-30 2012-07-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for driving the same

Also Published As

Publication number Publication date
CN1702867A (zh) 2005-11-30
JP2011108357A (ja) 2011-06-02
JP5080663B2 (ja) 2012-11-21
CN100595923C (zh) 2010-03-24

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