JP2008153678A - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP2008153678A JP2008153678A JP2008000095A JP2008000095A JP2008153678A JP 2008153678 A JP2008153678 A JP 2008153678A JP 2008000095 A JP2008000095 A JP 2008000095A JP 2008000095 A JP2008000095 A JP 2008000095A JP 2008153678 A JP2008153678 A JP 2008153678A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- gate
- erase
- memory device
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008000095A JP2008153678A (ja) | 2004-05-27 | 2008-01-04 | 半導体記憶装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004157209 | 2004-05-27 | ||
JP2008000095A JP2008153678A (ja) | 2004-05-27 | 2008-01-04 | 半導体記憶装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005062063A Division JP4664707B2 (ja) | 2004-05-27 | 2005-03-07 | 半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011034239A Division JP5080663B2 (ja) | 2004-05-27 | 2011-02-21 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008153678A true JP2008153678A (ja) | 2008-07-03 |
Family
ID=35632475
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008000095A Pending JP2008153678A (ja) | 2004-05-27 | 2008-01-04 | 半導体記憶装置 |
JP2011034239A Active JP5080663B2 (ja) | 2004-05-27 | 2011-02-21 | 半導体記憶装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011034239A Active JP5080663B2 (ja) | 2004-05-27 | 2011-02-21 | 半導体記憶装置 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP2008153678A (zh) |
CN (1) | CN100595923C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8223552B2 (en) | 2008-09-30 | 2012-07-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for driving the same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
JP5755909B2 (ja) * | 2011-03-09 | 2015-07-29 | ラピスセミコンダクタ株式会社 | 半導体不揮発性メモリ及びデータ書き込み方法 |
KR101979299B1 (ko) * | 2012-12-26 | 2019-09-03 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
KR102396743B1 (ko) * | 2018-07-16 | 2022-05-12 | 에스케이하이닉스 주식회사 | 메모리 장치, 이를 포함하는 메모리 시스템 및 그것의 동작 방법 |
CN110838328B (zh) * | 2018-08-17 | 2021-09-10 | 北京兆易创新科技股份有限公司 | 一种存储器的擦除方法和系统 |
US10741260B1 (en) * | 2019-05-28 | 2020-08-11 | Micron Technology, Inc. | Systems and methods providing improved calibration of memory control voltage |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
JPH03222196A (ja) * | 1990-01-26 | 1991-10-01 | Hitachi Ltd | 不揮発性半導体記憶装置 |
JP2984045B2 (ja) * | 1990-09-27 | 1999-11-29 | 沖電気工業株式会社 | 半導体記憶装置 |
JPH05174586A (ja) * | 1991-12-24 | 1993-07-13 | Kawasaki Steel Corp | 電気的消去可能な不揮発性メモリ |
JPH0729385A (ja) * | 1993-07-12 | 1995-01-31 | Hitachi Ltd | Eeprom装置 |
JP2987105B2 (ja) * | 1996-06-10 | 1999-12-06 | ハライ エリヤホウ | フラッシュEEpromメモリシステムとその使用方法 |
JPH113597A (ja) * | 1997-04-15 | 1999-01-06 | Toshiba Microelectron Corp | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法 |
JPH11220111A (ja) * | 1998-01-29 | 1999-08-10 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置 |
JP4550206B2 (ja) * | 1999-02-19 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の駆動方法 |
JP4084922B2 (ja) * | 2000-12-22 | 2008-04-30 | 株式会社ルネサステクノロジ | 不揮発性記憶装置の書込み方法 |
JP2002260388A (ja) * | 2001-03-02 | 2002-09-13 | Sony Corp | 内容アドレス可能な半導体記憶装置とその動作方法 |
JP2003046002A (ja) * | 2001-07-26 | 2003-02-14 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
TW546840B (en) * | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
JP3632001B2 (ja) * | 2001-12-28 | 2005-03-23 | サンディスク コーポレイション | フラッシュEEpromメモリシステムとその使用方法 |
JP4052857B2 (ja) * | 2002-03-18 | 2008-02-27 | 株式会社日立製作所 | 不揮発性半導体メモリアレイ及び該メモリアレイリード方法 |
JP4647175B2 (ja) * | 2002-04-18 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
JP2004087770A (ja) * | 2002-08-27 | 2004-03-18 | Sony Corp | 不揮発性半導体メモリ装置およびその電荷注入方法 |
JP4372406B2 (ja) * | 2002-11-11 | 2009-11-25 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置および半導体集積回路装置 |
JP2007272952A (ja) * | 2006-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体記憶装置 |
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2005
- 2005-05-27 CN CN200510074348A patent/CN100595923C/zh active Active
-
2008
- 2008-01-04 JP JP2008000095A patent/JP2008153678A/ja active Pending
-
2011
- 2011-02-21 JP JP2011034239A patent/JP5080663B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8223552B2 (en) | 2008-09-30 | 2012-07-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for driving the same |
Also Published As
Publication number | Publication date |
---|---|
CN1702867A (zh) | 2005-11-30 |
JP2011108357A (ja) | 2011-06-02 |
JP5080663B2 (ja) | 2012-11-21 |
CN100595923C (zh) | 2010-03-24 |
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