JP2008121063A - 無電解めっき方法 - Google Patents
無電解めっき方法 Download PDFInfo
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- JP2008121063A JP2008121063A JP2006305738A JP2006305738A JP2008121063A JP 2008121063 A JP2008121063 A JP 2008121063A JP 2006305738 A JP2006305738 A JP 2006305738A JP 2006305738 A JP2006305738 A JP 2006305738A JP 2008121063 A JP2008121063 A JP 2008121063A
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- 238000007772 electroless plating Methods 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000012530 fluid Substances 0.000 claims abstract description 24
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 34
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 18
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 9
- 239000001569 carbon dioxide Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract description 47
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 229910001111 Fine metal Inorganic materials 0.000 abstract description 6
- 230000009977 dual effect Effects 0.000 abstract description 6
- 230000006698 induction Effects 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 239000010408 film Substances 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 150000004696 coordination complex Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1682—Control of atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1685—Process conditions with supercritical condition, e.g. chemical fluid deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】金属基体試料22の表面に無電解めっきする際に、無電解めっき液19中に金属粉末を分散させた状態で超臨界流体ないしは亜臨界流体を使用して無電解めっきを行う。そうすると、誘導共析現象を利用して短時間で均質な厚いめっき層が得られる。本発明の無電解めっき方法では、金属粉末として平均粒径は1nm以上100μm以下のものを使用でき、半導体素子内の微細金属配線形成方法であるダマシン法ないしデュアルダマシン法にも適用可能である。
【選択図】図1
Description
以下に述べる各種実験例では、無電解めっき液として市販のニッケル・リン系無電解めっき液(トップニコロンVS(商品名)、奥野製薬工業株式会社製)を使用した。このニッケル・リン系無電解めっき液のニッケル濃度は5.5g/Lであり、pHは5.4であった。また、触媒としては塩化パラジウム系・アクチベーター水溶液(ICPアクセラ(商品名)、奥野製薬工業株式会社製)を使用した。また、無電解めっき液中には非イオン界面活性剤を10mL/Lとなるように添加するとともに、ニッケル粉末を添加する場合には、粒径3〜7μmのニッケル粉末をめっき液500mLに対して0.3g/Lとなるように添加した。
無電解めっき装置10としては、図1に示したように、超臨界流体ないし亜臨界流体を用いて無電解めっきを行うことができるようにするため、耐圧無電解めっき槽11を用いた。この耐圧無電解めっき槽11には、必要に応じて二酸化炭素ボンベ12からの二酸化炭素を高圧ポンプユニット13及びバルブ14を経て上部の蓋15に設けられた入口16に供給することができ、また、この二酸化炭素を上部の蓋15に設けられた出口17から圧力調整ユニット18を経て周囲大気中に排出することができるようになっている。
各種実験例で使用する金属基体としては市販の真ちゅうを使用し、この金属基体を酸洗前処理後に上記の触媒としての塩化パラジウム系・アクチベーター水溶液に25℃において3分間浸漬することにより表面が活性化された金属基体試料22を用いた。
実験例1及び2としては、超臨界状態ないしは亜臨界状態で、ニッケル粉末を添加した場合(実験例1)及びニッケル粉末を添加しない場合(実験例2)のそれぞれについて無電解めっきを行った。まず、耐圧無電解めっき槽11内に所定の無電解めっき液19を30mL注入し、金属基体試料22を上記耐圧無電解めっき槽11内の無電解めっき液19の上部に、この無電解めっき液19に触れないように配置した。この状態で、耐圧無電解めっき槽11内の無電解めっき液の温度を80℃に加熱し、スターラー20で無電解めっき液19の撹拌を開始(撹拌速度300rpm一定)するとともに、二酸化炭素ボンベ12、高圧ポンプユニット13、バルブ14及び圧力調整ユニット18を手動で操作することによって耐圧無電解めっき槽11内の圧力が10MPaとなるように加圧した。
○:良好な厚いめっき被膜が得られた。
△:良好なめっき被膜が得られたが、厚さは薄かった。
▲:めっき被膜は得られたが、厚さは薄くかつ部分的にムラが認められた。
×:めっき被膜は薄く、全面にムラが認められた。
実験例3及び4としては、大気圧下でニッケル粉末を添加した場合(実験例3)及びニッケル粉末を添加しない場合(実験例4)のそれぞれについて無電解めっきを行った。まず、大気開放状態の耐圧無電解めっき槽11内に所定の無電解めっき液19を40mL注入し、この状態で、耐圧無電解めっき槽11内の無電解めっき液の温度を80℃に加熱した。次いで、スターラー20で無電解めっき液19の撹拌を開始(撹拌速度300rpm一定)するとともに、金属基体試料22を無電解めっき液19内に浸漬した。この状態を30分間維持した後、金属基体試料22を取り出し、水洗及び乾燥後に目視により金属基体試料22の表面のめっき状態を観察した。この実験例3及び4で得られた測定結果を実験例1及び2の測定結果とまとめて表1に示す。
11 耐圧無電解めっき槽
12 二酸化炭素ボンベ
13 高圧ポンプユニット
14 バルブ
15 蓋
16 入口
17 出口
18 圧力調整ユニット
19 無電解めっき液
20 スターラー
21 オーブン
22 金属基体試料
Claims (4)
- 金属基体の表面に無電解めっきする方法において、無電解めっき液中に金属粉末を分散させた状態で、亜臨界流体又は超臨界流体を用いて、誘導共析現象を利用して無電解めっきを行うことを特徴とする無電解めっき方法。
- 前記金属粉末は、金属基体、無電解めっき処理にて得られる金属被膜の少なくとも一方と同種の金属であることを特徴とする請求項1に記載の無電解めっき方法。
- 前記金属粉末の平均粒径は1nm以上100μm以下であることを特徴とする請求項1又は2に記載の無電解めっき方法。
- 前記無電解めっきは、二酸化炭素及び不活性ガスの少なくとも一方及び界面活性剤の共存下で行われることを特徴とする請求項1〜3のいずれかに記載の無電解めっき方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006305738A JP4177400B2 (ja) | 2006-11-10 | 2006-11-10 | 無電解めっき方法 |
KR1020097007632A KR20090084817A (ko) | 2006-11-10 | 2007-10-24 | 무전해 도금 방법 |
CNA2007800417060A CN101535527A (zh) | 2006-11-10 | 2007-10-24 | 无电解镀方法 |
EP07830426A EP2067880A1 (en) | 2006-11-10 | 2007-10-24 | Electroless plating method |
US12/447,013 US20100092661A1 (en) | 2006-11-10 | 2007-10-24 | Electroless plating method |
PCT/JP2007/070692 WO2008056537A1 (fr) | 2006-11-10 | 2007-10-24 | Procédé de dépôt autocatalytique |
TW096142469A TW200900536A (en) | 2006-11-10 | 2007-11-09 | Electroless plating method |
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JP2006305738A JP4177400B2 (ja) | 2006-11-10 | 2006-11-10 | 無電解めっき方法 |
Related Child Applications (1)
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JP2007262671A Division JP4613270B2 (ja) | 2007-10-05 | 2007-10-05 | 無電解めっき方法 |
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JP2008121063A true JP2008121063A (ja) | 2008-05-29 |
JP4177400B2 JP4177400B2 (ja) | 2008-11-05 |
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JP2006305738A Expired - Fee Related JP4177400B2 (ja) | 2006-11-10 | 2006-11-10 | 無電解めっき方法 |
Country Status (7)
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---|---|
US (1) | US20100092661A1 (ja) |
EP (1) | EP2067880A1 (ja) |
JP (1) | JP4177400B2 (ja) |
KR (1) | KR20090084817A (ja) |
CN (1) | CN101535527A (ja) |
TW (1) | TW200900536A (ja) |
WO (1) | WO2008056537A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009249652A (ja) * | 2008-04-01 | 2009-10-29 | Ses Co Ltd | 無電解めっき方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011101991A1 (ja) * | 2010-02-22 | 2011-08-25 | トヨタ自動車株式会社 | 動力伝達装置 |
JP6400512B2 (ja) * | 2015-03-18 | 2018-10-03 | 株式会社東芝 | 電気めっき方法及び電気めっき装置 |
CN106325629B (zh) * | 2015-07-06 | 2024-01-02 | 湖州胜僖电子科技有限公司 | 一种优化化学镀金析出的ito走线设计方法 |
CN110479688B (zh) * | 2019-08-05 | 2022-02-11 | 马鞍山致青工业设计有限公司 | 一种硅片生产用酸洗液循环利用的转动式酸洗装置 |
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JPH0868885A (ja) * | 1994-08-30 | 1996-03-12 | Kobe Steel Ltd | 高速増殖炉酸化物燃料用被覆管 |
JPH08158097A (ja) * | 1994-11-29 | 1996-06-18 | Suzuki Motor Corp | 分散メッキ皮膜 |
JP3660777B2 (ja) | 1997-03-06 | 2005-06-15 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | 錫合金膜の形成方法およびその錫合金めっき浴 |
US6793793B2 (en) * | 2000-08-24 | 2004-09-21 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
JP3703132B2 (ja) * | 2000-12-28 | 2005-10-05 | 英夫 吉田 | 電気メッキ等の電気化学的処理方法およびその電気化学的反応装置 |
JP2003096596A (ja) | 2001-09-25 | 2003-04-03 | Ebara Corp | めっき方法及びめっき装置 |
US6998151B2 (en) * | 2002-05-10 | 2006-02-14 | General Electric Company | Method for applying a NiAl based coating by an electroplating technique |
JP3827677B2 (ja) | 2004-03-11 | 2006-09-27 | 松下電器産業株式会社 | 半導体装置の製造方法及びメッキ液 |
JP2006037188A (ja) | 2004-07-29 | 2006-02-09 | Mitsubishi Materials Corp | 無電解めっきの前処理方法及びその前処理方法を含む無電解めっき法 |
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2006
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2007
- 2007-10-24 US US12/447,013 patent/US20100092661A1/en not_active Abandoned
- 2007-10-24 KR KR1020097007632A patent/KR20090084817A/ko not_active Application Discontinuation
- 2007-10-24 WO PCT/JP2007/070692 patent/WO2008056537A1/ja active Application Filing
- 2007-10-24 CN CNA2007800417060A patent/CN101535527A/zh active Pending
- 2007-10-24 EP EP07830426A patent/EP2067880A1/en not_active Withdrawn
- 2007-11-09 TW TW096142469A patent/TW200900536A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009249652A (ja) * | 2008-04-01 | 2009-10-29 | Ses Co Ltd | 無電解めっき方法 |
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TW200900536A (en) | 2009-01-01 |
CN101535527A (zh) | 2009-09-16 |
WO2008056537A1 (fr) | 2008-05-15 |
US20100092661A1 (en) | 2010-04-15 |
EP2067880A1 (en) | 2009-06-10 |
JP4177400B2 (ja) | 2008-11-05 |
KR20090084817A (ko) | 2009-08-05 |
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