JP2008060324A5 - - Google Patents

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Publication number
JP2008060324A5
JP2008060324A5 JP2006235519A JP2006235519A JP2008060324A5 JP 2008060324 A5 JP2008060324 A5 JP 2008060324A5 JP 2006235519 A JP2006235519 A JP 2006235519A JP 2006235519 A JP2006235519 A JP 2006235519A JP 2008060324 A5 JP2008060324 A5 JP 2008060324A5
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JP
Japan
Prior art keywords
layer
wiring
forming
opening
manufacturing
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Application number
JP2006235519A
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English (en)
Japanese (ja)
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JP4919738B2 (ja
JP2008060324A (ja
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Application filed filed Critical
Priority claimed from JP2006235519A external-priority patent/JP4919738B2/ja
Priority to JP2006235519A priority Critical patent/JP4919738B2/ja
Priority to US11/896,031 priority patent/US7851250B2/en
Priority to CN201110081650XA priority patent/CN102208419B/zh
Priority to CN200710142266XA priority patent/CN101136312B/zh
Priority to KR1020070088197A priority patent/KR101357684B1/ko
Publication of JP2008060324A publication Critical patent/JP2008060324A/ja
Publication of JP2008060324A5 publication Critical patent/JP2008060324A5/ja
Priority to US12/777,580 priority patent/US8293593B2/en
Publication of JP4919738B2 publication Critical patent/JP4919738B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006235519A 2006-08-31 2006-08-31 半導体装置の作製方法 Expired - Fee Related JP4919738B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006235519A JP4919738B2 (ja) 2006-08-31 2006-08-31 半導体装置の作製方法
US11/896,031 US7851250B2 (en) 2006-08-31 2007-08-29 Method for manufacturing semiconductor device and method for manufacturing display device
KR1020070088197A KR101357684B1 (ko) 2006-08-31 2007-08-31 반도체 장치의 제작 방법
CN200710142266XA CN101136312B (zh) 2006-08-31 2007-08-31 半导体器件的制造方法及显示器件的制造方法
CN201110081650XA CN102208419B (zh) 2006-08-31 2007-08-31 半导体器件的制造方法及显示器件的制造方法
US12/777,580 US8293593B2 (en) 2006-08-31 2010-05-11 Method for manufacturing semiconductor device and method for manufacturing display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006235519A JP4919738B2 (ja) 2006-08-31 2006-08-31 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011277871A Division JP5409759B2 (ja) 2011-12-20 2011-12-20 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008060324A JP2008060324A (ja) 2008-03-13
JP2008060324A5 true JP2008060324A5 (enExample) 2009-07-23
JP4919738B2 JP4919738B2 (ja) 2012-04-18

Family

ID=39152163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006235519A Expired - Fee Related JP4919738B2 (ja) 2006-08-31 2006-08-31 半導体装置の作製方法

Country Status (4)

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US (2) US7851250B2 (enExample)
JP (1) JP4919738B2 (enExample)
KR (1) KR101357684B1 (enExample)
CN (2) CN101136312B (enExample)

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KR100846877B1 (ko) 2008-04-10 2008-07-16 주식회사 세종테크 금속증착층을 갖는 광투과성 사출품의 투과표시패턴 형성방법
KR20090110099A (ko) * 2008-04-17 2009-10-21 삼성전자주식회사 박막 트랜지스터 표시판, 이의 제조 방법 및 이를 포함하는평판 표시 장치
KR20100067434A (ko) * 2008-12-11 2010-06-21 한국기계연구원 상이한 레이저 제거 최소 임계값을 이용한 미세 패턴 방법 및 이를 이용한 ｔｆｔ의 형성 방법.
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
EP2234100B1 (en) 2009-03-26 2016-11-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN102576737B (zh) 2009-10-09 2015-10-21 株式会社半导体能源研究所 半导体器件及其制造方法
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
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CN102311095B (zh) * 2011-08-09 2013-11-06 吉林大学 一种在微流控芯片中制备多级金属微纳结构的方法
CN102489873B (zh) * 2011-11-16 2014-07-16 中国科学院上海光学精密机械研究所 在多孔玻璃内部制备三维微流通道的方法
KR101899481B1 (ko) * 2011-12-23 2018-09-18 삼성전자주식회사 전자 장치의 배선 형성 방법
CN103354243B (zh) 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN105334680A (zh) * 2014-08-15 2016-02-17 群创光电股份有限公司 阵列基板结构及接触结构
CN113128276A (zh) * 2019-12-31 2021-07-16 格科微电子（上海）有限公司 光学指纹器件的制造方法
CN113568225A (zh) * 2021-07-09 2021-10-29 西安中科微星光电科技有限公司 一种液晶光阀模组封装结构

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US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device

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