JP2007538413A - プラズマイオン注入システムのためのインサイチュプロセスチャンバの調整方法 - Google Patents

プラズマイオン注入システムのためのインサイチュプロセスチャンバの調整方法 Download PDF

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JP2007538413A
JP2007538413A JP2007527467A JP2007527467A JP2007538413A JP 2007538413 A JP2007538413 A JP 2007538413A JP 2007527467 A JP2007527467 A JP 2007527467A JP 2007527467 A JP2007527467 A JP 2007527467A JP 2007538413 A JP2007538413 A JP 2007538413A
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process chamber
plasma
coating film
ion implantation
depositing
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JP2007538413A5 (https=
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シング、ヴィクラム
グプタ、アチュル
パーシング、ハロルド・エム
ワルター、スティーブン・アール
テストニ、アン・エル
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007527467A 2004-05-20 2005-05-19 プラズマイオン注入システムのためのインサイチュプロセスチャンバの調整方法 Withdrawn JP2007538413A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/850,222 US20050260354A1 (en) 2004-05-20 2004-05-20 In-situ process chamber preparation methods for plasma ion implantation systems
PCT/US2005/017699 WO2005114692A2 (en) 2004-05-20 2005-05-19 In-situ process chamber preparation methods for plasma ion implantation systems

Publications (2)

Publication Number Publication Date
JP2007538413A true JP2007538413A (ja) 2007-12-27
JP2007538413A5 JP2007538413A5 (https=) 2008-07-03

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US (1) US20050260354A1 (https=)
JP (1) JP2007538413A (https=)
KR (1) KR20070026608A (https=)
CN (1) CN1977351A (https=)
TW (1) TW200602510A (https=)
WO (1) WO2005114692A2 (https=)

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JP2011511473A (ja) * 2008-02-06 2011-04-07 アプライド マテリアルズ インコーポレイテッド チャンバ内面上に純粋またはほぼ純粋なシリコンのシーズニング層を用いるプラズマ浸漬イオン注入方法
JP2012524410A (ja) * 2009-04-20 2012-10-11 アプライド マテリアルズ インコーポレイテッド プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
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KR20160089490A (ko) * 2013-11-26 2016-07-27 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 주입 생산성 향상을 위한 방법
JP2016529704A (ja) * 2013-07-18 2016-09-23 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 注入システムのイオンビーム品質を改善する方法
KR20170056426A (ko) * 2015-11-13 2017-05-23 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 이온생성장치, 및 이온생성장치의 제어방법
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JP2023178891A (ja) * 2022-06-06 2023-12-18 株式会社サイコックス 陰極、高速原子ビーム線源、接合基板の製造方法、および、陰極の再生方法
JP2024161438A (ja) * 2018-10-19 2024-11-19 ラム リサーチ コーポレーション 半導体処理のためのチャンバ構成部品のインサイチュ保護被膜

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