KR20070026608A - 플라즈마 이온 주입 시스템을 위한 현장 공정 챔버 준비방법 - Google Patents

플라즈마 이온 주입 시스템을 위한 현장 공정 챔버 준비방법 Download PDF

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Publication number
KR20070026608A
KR20070026608A KR1020067026723A KR20067026723A KR20070026608A KR 20070026608 A KR20070026608 A KR 20070026608A KR 1020067026723 A KR1020067026723 A KR 1020067026723A KR 20067026723 A KR20067026723 A KR 20067026723A KR 20070026608 A KR20070026608 A KR 20070026608A
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KR
South Korea
Prior art keywords
process chamber
coating
plasma
depositing
ion implantation
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KR1020067026723A
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English (en)
Korean (ko)
Inventor
비크람 신히
아툴 굽타
하롤드 엠. 퍼싱
스티븐 알. 웰터
안네 엘. 테스토니
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20070026608A publication Critical patent/KR20070026608A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020067026723A 2004-05-20 2005-05-19 플라즈마 이온 주입 시스템을 위한 현장 공정 챔버 준비방법 Withdrawn KR20070026608A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/850,222 2004-05-20
US10/850,222 US20050260354A1 (en) 2004-05-20 2004-05-20 In-situ process chamber preparation methods for plasma ion implantation systems

Publications (1)

Publication Number Publication Date
KR20070026608A true KR20070026608A (ko) 2007-03-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067026723A Withdrawn KR20070026608A (ko) 2004-05-20 2005-05-19 플라즈마 이온 주입 시스템을 위한 현장 공정 챔버 준비방법

Country Status (6)

Country Link
US (1) US20050260354A1 (https=)
JP (1) JP2007538413A (https=)
KR (1) KR20070026608A (https=)
CN (1) CN1977351A (https=)
TW (1) TW200602510A (https=)
WO (1) WO2005114692A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160089490A (ko) * 2013-11-26 2016-07-27 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 주입 생산성 향상을 위한 방법
WO2024163137A1 (en) * 2023-02-03 2024-08-08 Tokyo Electron Limited Methods for semiconductor process chamber

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WO2024163137A1 (en) * 2023-02-03 2024-08-08 Tokyo Electron Limited Methods for semiconductor process chamber

Also Published As

Publication number Publication date
WO2005114692A3 (en) 2006-03-02
US20050260354A1 (en) 2005-11-24
JP2007538413A (ja) 2007-12-27
TW200602510A (en) 2006-01-16
WO2005114692A2 (en) 2005-12-01
WO2005114692A9 (en) 2006-01-19
CN1977351A (zh) 2007-06-06

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