JP2007538397A - 基板表面洗浄方法 - Google Patents
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Abstract
Description
120 プラズマアプリケータ
130 第1工程ガス流入部
140 チャンバ
150 濾過部
160 基板積載部
170 排出口
180 シリコン基板
190 第2工程ガス流入口
200 第3工程ガス流入部
210 ヒータ
220 加熱ジャケット
Claims (22)
- プラズマを利用して自然酸化物、化学的酸化物、または損傷された部分を有する基板の表面を洗浄する方法において、
H2とN2を混合したガスである第1工程ガスを洗浄装置の第1流入部に流入する段階と、
前記洗浄装置のプラズマ生成空間内で前記第1ガスからプラズマを生成し保持する段階と、
前記洗浄装置の第2流入部にフッ素酸ガスの第2工程ガスを流入し、前記第2工程ガスは前記第1ガスのプラズマによってフッ素酸(HF)ラジカルで活性化される段階と、
前記基板の前記表面に前記第1ガス、前記第2ガス、及び前記物質の副産物であるNxHyFzのポリマ膜を形成する段階と、
前記基板を熱処理して前記ポリマ膜を除去し、前記基板の前記表面を洗浄する段階とを特徴とする基板の表面を洗浄する方法。 - 前記第1ガスの前記プラズマを生成し保持する段階後に、
前記第1ガスの前記プラズマを濾過してラジカルのみを通過させる段階をさらに含むことを特徴とする請求項1に記載の基板の表面を洗浄する方法。 - 前記ポリマ膜と前記自然酸化膜とを除去する段階後に、H2の流動とともに熱処理によって前記基板の前記表面の損傷層を除去することを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- ガス圧力は0.1Torr乃至50Torrの範囲であり、マイクロウェーブ電力は100W乃至2000W範囲であり、N2流量は500sccm以上であり、フッ素酸(HF)流量は5sccm乃至500sccm範囲である時、前記H2ガスの流量は20sccm以上であることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- ガス圧力は0.1Torr乃至5Torrの範囲であり、マイクロウェーブ電力は100W乃至2000W範囲であり、H2流量は20sccm以上であり、フッ素酸流量は5sccm乃至500sccm範囲である時、前記N2ガスの流量は500sccm以上であることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- ガス圧力は0.1Torr乃至50Torrの範囲であり、マイクロウェーブ電力は100W乃至2000W範囲であり、フッ素酸(HF)流量は5sccm乃至500sccm範囲である時、前記H2ガスの流量は20sccm以上であり、N2ガスの流量は500sccm以上であることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- 前記熱処理は紫外線ランプまたは赤外線ランプを用いて行われることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- 前記洗浄装置の壁面温度は前記基板の前記表面を洗浄する全体工程の時、50℃〜120℃の間に保持されることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- 前記熱処理は120℃〜400℃の間で10sccm及び50sccmであるH2ガスの流動を通じて行われることを特徴とする請求項1に記載の基板の表面を洗浄する方法。
- 絶縁層を含んで少なくとも一つ以上の層を有する半導体基板上にコンタクトホールを形成するためのエッチング工程の時に形成された自然酸化膜を除去するためのプラズマを用いた表面洗浄装置において、
前記絶縁層と前記絶縁層のエッチングの時、前記基板上に形成された自然酸化膜上にNxHyFzのポリマ膜を形成し、前記ポリマ膜はH2とN2とを混合した第1工程ガスの流入によってプラズマを発生させ、前記プラズマに第2工程フッ素酸(HF)ガスを流入して形成され、
前記ポリマ膜と前記自然酸化膜とを熱処理によって除去し、前記ポリマ膜の成分は分解され、前記自然酸化膜の成分と結合して励起されて除去されることを特徴とする表面洗浄方法。 - 前記熱処理は120℃〜400℃の間で10sccm及び50sccmであるH2ガスの流動を通じて行われることを特徴とする請求項10に記載の基板の表面洗浄方法。
- 前記洗浄装置の壁面温度は前記基板の前記表面を洗浄する全体工程の時、50℃〜120℃の間に保持されることを特徴とする請求項10に記載の表面洗浄方法。
- 真空保持可能なチャンバと、基板を積載する基板積載部と、プラズマ発生及び保持のための第1工程ガスを流入する第1工程ガス流入部と、プラズマ発生部と、ラジカルのみを前記基板の方へ通過させるための濾過部と、第2工程ガス流入部を含む表面洗浄装置で集積回路の製造のためのプラズマを用いた表面洗浄方法において、
パターニング工程の時、前記基板上の自然酸化膜上にNxHyFzのポリマ膜を形成し、前記ポリマ膜はH2とN2とを混合した第1工程ガスを前記第1工程ガス流入部に流入してプラズマを発生させ、前記第2工程ガス流入部を通じて前記プラズマに第2工程フッ素酸(HF)ガスを流入して形成され、前記ポリマ膜と前記自然酸化膜とを熱処理によって除去し、前記ポリマ膜の成分は分解されて前記自然酸化膜の成分と結合して励起されて除去されることを特徴とする表面洗浄方法。 - H2とN2とを混合した前記第1工程ガスを流入して前記プラズマを発生させる段階と前記プラズマに前記第2工程フッ素酸(HF)ガスを流入する段階との間に前記プラズマを濾過してラジカルのみを通過させる段階をさらに含むことを特徴とする請求項13に記載の表面洗浄方法。
- 前記ポリマ膜と前記自然酸化膜とを除去する段階後に、H2の流動とともに熱処理によって前記基板の前記表面の損傷層を除去することを特徴とする請求項13に記載の表面洗浄方法。
- 前記洗浄装置の壁面温度は前記基板の前記表面を洗浄する全体工程の時、50℃〜120℃の間に保持されることを特徴とする請求項13に記載の表面洗浄方法。
- ガス圧力は5Torrであり、マイクロウェーブ電力は600Wであり、フッ素酸(HF)(第2工程ガス)流量は48sccmである時、前記H2ガスの流量は180sccm以上であり、N2ガスの流量は1800sccm以上であることを特徴とする請求項13に記載の表面洗浄方法。
- 真空保持可能なチャンバと、基板を積載する基板積載部と、プラズマ発生及び保持のための第1工程ガスを流入する第1工程ガス流入部と、プラズマ発生部と、ラジカルのみを前記基板の方へ通過させるための濾過部と、第2工程ガス流入部と、各ウェーハ工程の後、チャンバ内部環境を一定に保持するための第3工程ガス流入部とを含む表面洗浄装置で集積回路の製造のためのプラズマを用いた表面洗浄方法において、
H2とN2とを混合したガスである第1工程ガスを、第1工程ガス流入部を通じて前記チャンバへ流入する段階と、
前記プラズマ発生部において前記第1工程ガスからプラズマを生成する段階と、
前記第2工程ガス流入部を通じて前記チャンバにフッ素酸(HF)の第2工程ガスを流入する段階と、
熱処理によって前記ポリマ膜と前記自然酸化膜とを除去し、前記ポリマ膜の成分は分解され、前記自然酸化膜の成分と結合して励起されて除去される段階と、
前記洗浄工程後に第3工程ガスを前記チャンバ内へ流入して前記チャンバ環境を一定に保持する段階とを含むことを特徴とする表面洗浄方法。 - ガス圧力は0.1Torr乃至50Torrの範囲であり、マイクロウェーブ電力は100W乃至2000W範囲であり、フッ素酸(HF)流量は5sccm乃至500sccm範囲である時、前記H2ガスの流量は20sccm以上であり、N2ガスの流量は500sccm以上であることを特徴とする請求項18に記載の表面洗浄方法。
- 前記ポリマ膜と前記自然酸化膜は紫外線ランプまたは赤外線ランプを用いた熱処理によって除去されることを特徴とする請求項18に記載の表面洗浄方法。
- 前記ポリマ膜と前記自然酸化膜とを除去する段階後に、H2の流動とともに熱処理によって前記基板の前記表面の損傷層を除去することを特徴とする請求項18に記載の表面洗浄方法。
- 前記洗浄装置の壁面温度は前記基板の前記表面を洗浄する全体工程の時、50℃〜120℃の間に保持されることを特徴とする請求項18に記載の表面洗浄方法。
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US10/850,261 US7111629B2 (en) | 2001-01-08 | 2004-05-20 | Method for cleaning substrate surface |
PCT/KR2005/001356 WO2005114715A1 (en) | 2004-05-20 | 2005-05-10 | Method for cleaning substrate surface |
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JP2007538397A true JP2007538397A (ja) | 2007-12-27 |
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US (2) | US7111629B2 (ja) |
JP (1) | JP2007538397A (ja) |
CN (1) | CN100454496C (ja) |
WO (1) | WO2005114715A1 (ja) |
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Also Published As
Publication number | Publication date |
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US20060157079A1 (en) | 2006-07-20 |
CN1954413A (zh) | 2007-04-25 |
WO2005114715A1 (en) | 2005-12-01 |
US20050014375A1 (en) | 2005-01-20 |
WO2005114715A8 (en) | 2006-12-21 |
CN100454496C (zh) | 2009-01-21 |
US7111629B2 (en) | 2006-09-26 |
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