WO2011024777A1 - 真空処理装置及び真空処理方法 - Google Patents
真空処理装置及び真空処理方法 Download PDFInfo
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- WO2011024777A1 WO2011024777A1 PCT/JP2010/064220 JP2010064220W WO2011024777A1 WO 2011024777 A1 WO2011024777 A1 WO 2011024777A1 JP 2010064220 W JP2010064220 W JP 2010064220W WO 2011024777 A1 WO2011024777 A1 WO 2011024777A1
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- gas
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- 238000003672 processing method Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims abstract description 252
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000011261 inert gas Substances 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 87
- 229910052710 silicon Inorganic materials 0.000 claims description 87
- 239000010703 silicon Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 56
- 239000010410 layer Substances 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 22
- 230000004907 flux Effects 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 238000004891 communication Methods 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
Definitions
- the present invention relates to a vacuum processing apparatus and a vacuum processing method for performing processing, for example, etching in a processing chamber in a vacuum state.
- Patent Document 1 includes a first nozzle part that introduces H gas radicalized by plasma using a microwave and a processing chamber in a first gas introduction unit in a processing chamber that is in a predetermined vacuum state.
- a gas is introduced from a second nozzle portion for introducing NF 3 provided at a position sandwiched by the first nozzle portion, and reacts with an oxidized surface (SiO 2 ) of a silicon wafer placed in a predetermined vacuum atmosphere.
- a reaction product NH 4 ) 2 SiF 6 .
- the processing chamber is heated to control the silicon substrate to a predetermined temperature, thereby sublimating (NH 4 ) 2 SiF 6 to remove (etch) the natural oxide film on the surface of the silicon substrate.
- the present invention has been made in view of the above situation, and provides a vacuum processing apparatus capable of removing a natural oxide film efficiently and at low cost, and further cleaning the surface of the substrate after the natural oxide film is removed. It is an object of the present invention to provide a vacuum processing apparatus that can be used.
- a first aspect of the present invention includes a processing chamber in which an object to be processed is arranged and a predetermined vacuum state inside, and a first processing gas in a radical state in the processing chamber.
- First processing gas introduction means for introducing into the processing chamber from the opening first processing gas introduction port, and second processing gas introduction for opening the second processing gas that reacts with the first processing gas in a radical state into the processing chamber.
- the second processing gas introduction means for introducing into the processing chamber from the mouth, the temperature in the processing chamber, the first processing gas and the second processing gas in the radical state process the surface of the object to be processed, and the reaction is generated.
- Temperature control means for controlling a first temperature control state for generating a product and a second temperature control state for sublimating and removing the generated reaction product, and the temperature control means controls the second temperature control state.
- the first process In a vacuum processing apparatus characterized by comprising from scan inlet and an inert gas introducing means for introducing inert gas into the processing chamber.
- the sublimate of the reaction product is converted into the first process. Diffusion through the gas introduction port to the first treatment gas introduction means for bringing the first treatment gas into a radical state is reduced. Thereby, efficient processing can be achieved, and contamination of the first processing gas introduction system can also be prevented.
- the inert gas introduction unit prevents diffusion of the sublimate of the reaction product passing through the treatment gas introduction port.
- the vacuum processing apparatus includes an introduction control means for controlling an introduction state of the inert gas from the first processing gas introduction port.
- the introduction control unit by controlling the introduction state of the inert gas by the introduction control unit, the diffusion of the sublimate to the first process gas introduction unit through the first process gas introduction port is reliably prevented. .
- the introduction control means indicates the introduction state of the inert gas, the introduction flux of the introduced inert gas, and the reaction product.
- the vacuum processing apparatus is characterized in that the number of Peclays indicating the state of the ratio of the product to the diffusion flux of the sublimate is controlled to be 10 or more.
- the inert gas is introduced so that the number of peclers, which is the ratio of the introduced flux of the introduced inert gas and the diffusion flux of the sublimate of the reaction product, is 10 or more.
- the diffusion of the sublimate through the processing gas inlet is further reliably prevented.
- the inert gas introduction means introduces the inert gas through the first gas introduction means. It is in the vacuum processing apparatus characterized by being comprised.
- the inert gas is introduced through the first gas introduction means, so that the sublimate is prevented from diffusing from the first gas introduction port.
- the first gas introduction means is provided in a first gas introduction path communicating with the first gas introduction port.
- a vacuum processing apparatus comprising a plasma generation unit, wherein the first processing gas introduced by the plasma generation unit is in a plasma state.
- the first processing gas introduced into the first gas introduction path is introduced into the plasma state at the plasma generation unit and introduced from the first gas introduction port.
- the first processing gas is a gas that generates H radicals
- the second processing gas is at least NH.
- a gas for generating the x F y in a vacuum processing apparatus wherein the object to be processed is a silicon substrate.
- the first processing gas, the second processing gas, and the natural oxide film on the surface of the silicon substrate are reacted to generate a reaction product, and the silicon wafer is controlled to a predetermined temperature.
- the natural oxidation film on the surface of the silicon wafer can be removed by sublimating the reaction product.
- the first processing gas is at least one of NH 3 and H 2 and N 2
- the second processing gas is NF. 3 is a vacuum processing apparatus.
- NH x F y generated by the reaction of H radicals from NH 3 and H 2 and NF 3 as the second processing gas is reacted with a natural oxide film on the surface of the silicon substrate (silicon wafer). Then, a reaction product is generated, and the silicon wafer is controlled to a predetermined temperature, thereby sublimating the reaction product and removing a natural oxide film on the surface of the silicon wafer.
- the auxiliary gas introducing means for introducing the auxiliary processing gas in a radical state into the processing chamber and the auxiliary gas introducing means are introduced.
- the auxiliary processing gas and the second processing gas introduced from the second gas introducing means are controlled, and the surface layer of the silicon substrate from which the natural oxide film has been removed by the processing gas is removed.
- the vacuum processing apparatus further comprises a processing gas and a control means for removing a predetermined thickness by the second processing gas.
- the control means after removing the natural oxide film from the silicon substrate, the control means introduces an auxiliary processing gas from the auxiliary gas introduction means, and the surface layer of the silicon substrate after the natural oxide film is removed by the control means. Is removed to a predetermined thickness by an auxiliary processing gas. For this reason, the processing apparatus for removing the natural oxide film can be used to reliably remove oxygen on the surface of the substrate after the natural oxide film is removed.
- the auxiliary gas introducing means also serves as the first gas introducing means.
- the equipment can be simplified.
- the control means includes the auxiliary processing gas and the second processing gas on the surface of the silicon substrate from which the natural oxide film has been removed.
- the silicon layer of the silicon substrate is removed to a predetermined thickness.
- the surface layer of the silicon substrate is removed by a predetermined thickness after the natural oxide film is removed from the silicon substrate, and oxygen on the surface of the substrate can be more reliably removed after the natural oxide film is removed.
- a first processing gas is introduced as a radical state from a first processing gas inlet into a processing chamber in which an object to be processed is arranged and the inside is set to a predetermined vacuum state.
- a second processing gas that reacts with the first processing gas in a state is introduced from a second processing gas introduction port, and the temperature of the processing chamber is determined by the first processing gas and the second processing gas in the radical state.
- a first temperature control state in which the surface of the product is treated to produce a reaction product, and then the second temperature control state in which the produced reaction product is sublimated and removed, and the second temperature control state is controlled.
- the inert gas is introduced into the processing chamber from the first processing gas inlet when the control is performed.
- the sublimate of the reaction product is converted into the first process. Diffusion through the gas introduction port to the first treatment gas introduction means for bringing the first treatment gas into a radical state is reduced. Thereby, efficient processing can be achieved, and contamination of the first processing gas introduction system can also be prevented.
- the present invention provides a temperature controlled to a first temperature control state in which a processing gas treats the surface of an object to be processed to generate a reaction product and a second temperature control state in which the generated reaction product is sublimated and removed.
- the reaction product is generated because the inert gas is introduced from the first processing gas inlet in the second temperature control state in which the generated reaction product is sublimated and removed.
- the diffusion of the sublimate of the product through the first processing gas inlet to the first processing gas introduction system is reduced. Thereby, efficient processing can be achieved, and contamination of the processing gas introduction system can also be prevented.
- oxygen on the surface of the substrate can be surely removed after the natural oxide film is removed.
- FIG. 1 is an overall configuration diagram of a vacuum processing apparatus according to a first embodiment of the present invention. It is a schematic block diagram of a processing apparatus. It is a conceptual diagram showing the condition of the process gas at the time of removing a natural oxide film. It is process explanatory drawing of a natural oxide film removal. It is a graph showing the removal condition of a natural oxide film. It is a conceptual diagram which shows the state of the gas flux in a 1st gas inlet. It is a conceptual diagram showing the condition of the process gas at the time of removing a silicon layer. It is process explanatory drawing of a silicon layer removal. It is a graph showing the removal condition of a silicon layer. It is a time chart showing the time-dependent change of the process gas of a natural oxide film removal and a silicon layer removal. It is the schematic showing a specific use. It is a figure which shows the result of a test example.
- FIGS. 1-11 1st Embodiment of this invention is described based on FIGS. 1-11.
- FIG. 1 shows the overall configuration of a vacuum processing apparatus according to the first embodiment of the present invention
- FIG. 2 shows a schematic configuration of the processing apparatus
- FIG. 3 shows a concept representing the status of a processing gas when a natural oxide film is removed
- FIG. 4 shows the process of removing the natural oxide film
- FIG. 5 is a graph showing the removal state of the natural oxide film
- FIG. 6 is a concept showing the state of the gas flux at the first gas inlet
- FIG. 8 is a description of the process of removing the silicon layer
- FIG. 9 is a graph representing the removal state of the silicon layer
- FIG. FIG. 11 shows an outline representing a specific use of the process gas for layer removal with time.
- a vacuum processing apparatus (etching apparatus) 1 is provided with a charging / discharging tank 2 connected to a vacuum exhaust system, and a vacuum processing tank 3 as a processing chamber is provided above the charging / discharging tank 2. It has been.
- a turntable 4 that can rotate at a predetermined speed is provided inside the take-out tank 2, and a boat 6 that holds a silicon substrate 5 as a substrate is supported on the turntable 4.
- a plurality of (for example, 50) silicon substrates 5 are accommodated in the boat 6, and the plurality of silicon substrates 5 are arranged in parallel to each other at a predetermined interval.
- the silicon of the silicon substrate 5 may be either single crystal silicon or polycrystalline silicon (polysilicon), and is simply referred to as silicon below. For this reason, when a polysilicon silicon substrate is applied, etching of a silicon layer described later is etching of the polysilicon layer.
- a feed screw 7 extending in the vertical direction is provided at the upper part of the charging / unloading tank 2, and the turntable 4 moves up and down by driving the feed screw 7.
- the inside of the charging / unloading tank 2 and the vacuum processing tank 3 communicate with each other through a communication port 8 and is isolated from the atmosphere by the shutter means 9.
- the boat 6 (silicon substrate 5) is transferred between the take-out tank 2 and the vacuum processing tank 3 by opening and closing the shutter means 9 and raising and lowering the turntable 4.
- Two first gas introduction paths 11 into which radical hydrogen (H radical: H * ) is introduced are provided on the side of the vacuum processing tank 3, and the two first gas introduction paths 11 extend in the vertical direction.
- the H radical H * is introduced into the vacuum processing tank 3 from the first gas inlet 12 through a first shower nozzle 13 having a plurality of first gas inlets 12 in the vertical direction.
- a second shower nozzle 14 into which NF 3 as a second processing gas (processing gas) is introduced is provided inside the vacuum processing tank 3, and the NF 3 extends in the vertical direction.
- a plurality of second gas inlets 15 are introduced into the vacuum processing tank 3.
- the H radical H * introduced from the first gas inlet 12 and the NF 3 introduced from the second gas inlet 15 react with each other, whereby the precursor NH serving as a processing gas is formed inside the vacuum processing tank 3.
- x F y is generated.
- a plasma generator 16 is provided upstream of each first gas introduction path 11.
- the plasma generating unit 16 is configured to turn the processing gas into a plasma state using microwaves.
- the plasma generating section 16 which communicates with the first gas inlet passage 11 is NH 3 feed gas and N 2 gas as the first processing gas via a flow controller 17, NH 3 gas and N 2 in the plasma generating part 16
- H radicals H * are generated, and the H radicals H * are introduced into the first gas introduction path 11.
- NF 3 gas is supplied to the second gas introduction path 18 communicating with the second shower nozzle 14 via the flow rate adjusting means 19.
- the first shower nozzle 13, the first gas introduction port 12 and the flow rate adjustment means 17 constitute a first gas introduction means
- the second shower nozzle 14, the second gas introduction path 18 and the flow rate adjustment means 19 constitute a second gas introduction means. Is configured.
- the first gas introduction unit also serves as the inert gas introduction unit.
- the plasma generation unit 16 is stopped and the NH 3 gas is stopped.
- N 2 gas can be introduced through the flow rate adjusting means 17, and N 2 gas is introduced from the first gas inlet 12 of the first shower nozzle 13.
- the inert gas introduction means may be provided separately from the first gas introduction means.
- the inert gas introduction means may be provided in the middle of the first gas introduction path 11, for example, from the downstream side of the plasma generator 16 through the switching means.
- a branching flow path may be provided, and the inert gas may be introduced from the first gas introduction port 12 by switching the flow path when the inert gas is introduced.
- the vacuum processing tank 3 is provided with a lamp heater (not shown) as temperature control means, and the temperature inside the vacuum processing tank 3, that is, the temperature of the silicon substrate 5 is controlled to a predetermined state by the lamp heater.
- the flow state of the processing gas by the flow rate adjusting means 17 and 19 and the operating state of the lamp heater are appropriately controlled by a control device (not shown) as a control means.
- the boat 6 holding the silicon substrate 5 is carried into the vacuum processing tank 3 and is evacuated so that the inside of the vacuum processing tank 3 is airtight and has a predetermined pressure. .
- a processing gas (at least one of NH 3 gas and H 2 and N 2 gas, NF 3 gas) is introduced into the vacuum processing tank 3 and silicon disposed in a predetermined vacuum atmosphere
- a reaction product (compound of Fy and NHx ⁇ (NH 4 ) 2 SiF 6 ⁇ ) is generated by reacting the natural oxidation surface (SiO 2 ) of the substrate 5 with the processing gas (adsorption reaction at a low temperature).
- the temperature control means operates the lamp heater to control the silicon substrate 5 to a predetermined temperature, and sublimates the reaction product ((NH 4 ) 2 SiF 6 ).
- the natural oxide film on the surface of the silicon substrate 5 is removed (etched).
- the first gas introduction unit functions as an inert gas introduction unit
- the plasma generation unit 16 is stopped, and the NH 3 gas is stopped.
- N 2 gas is introduced through the flow rate adjusting means 17. This prevents the sublimate of the reaction product from passing through the first gas inlet 12 and diffusing into the first shower nozzle 13 and the first gas inlet path 11. Details of this point will be described later.
- a process of etching a silicon layer having a predetermined thickness on the surface of the silicon substrate 5 may be further performed in order to further purify the surface of the silicon substrate 5.
- NF 3 gas is introduced into the vacuum processing tank 3. That is, the same processing gas as that used for etching the natural oxide film is introduced to etch the silicon layer having a predetermined thickness.
- the inside of the vacuum processing tank 3 is brought to a room temperature state (first temperature control state), and NH 3 gas and N 2 gas are passed from the first gas introduction path 11 through the flow rate adjusting means 17.
- introducing, in the plasma generating section 16 generates an H radical H *, it is introduced from the first gas inlet port 12 of the first shower nozzle 13 H radicals H * in the vacuum processing vessel 3.
- NF 3 gas is introduced into the vacuum processing tank 3 from the second gas inlet 15 of the second shower nozzle 14 via the flow rate adjusting means 19, and H radical H * and NF 3 gas are mixed and reacted to form NH.
- x F y is generated. That is, H * + NF 3 ⁇ NH x F y (NH 4 FH, NH 4 FHF, etc.)
- NH x F y reacts with the naturally oxidized surface (SiO 2 ) of the silicon substrate 5, and as shown in FIG. 4 (b), from F y and NH x and SiO 2
- the product (NH 4 ) 2 SiF 6 is produced. That is, NH x F y + SiO 2 ⁇ (NH 4 ) 2 SiF 6 + H 2 O ⁇
- the process proceeds to the second step, and the vacuum processing tank 3 is heated by a lamp heater (see FIG. 2) (second temperature control state: for example, 100 ° C. to 200 ° C. 4 (c), (NH 4 ) 2 SiF 6 is sublimated and removed from the surface of the silicon substrate 5.
- a lamp heater see FIG. 2 (second temperature control state: for example, 100 ° C. to 200 ° C. 4 (c)
- (NH 4 ) 2 SiF 6 is sublimated and removed from the surface of the silicon substrate 5.
- the first gas introduction means functions as the inert gas introduction means
- the plasma generation unit 16 is stopped
- the NH 3 gas is stopped
- only the N 2 gas is introduced from the flow rate adjustment means 17.
- the sublimated product of the reaction product is prevented from diffusing in the first shower nozzle 13 and the first gas introduction path 11 through the first gas introduction port 12.
- FIG. 6 shows the state of the gas flux at each first gas inlet 12, where reference numeral 21 indicates the flux (Flux) of the sublimate of the reaction product, and reference numeral 22 indicates nitrogen which is an inert gas. N 2 flux is shown. As shown in the figure, the flux 21 is expressed as the product of D, which is the diffusion coefficient of the sublimate, and the concentration gradient ⁇ C 1 / ⁇ x, and the flux 22 is the velocity of nitrogen and the nitrogen concentration C 2 . Expressed as a product.
- the ratio of the flux 21 and the flux 22 is preferably evaluated by the number of states called the Pecley number Pe.
- L is a representative length, in this case, the thickness of the first shower nozzle 13.
- the Pecley number Pe is sufficiently larger than 1, and if it becomes 10 or more, theoretically, it is almost certain. Diffusion will be prevented.
- the diffusion can be more reliably prevented if the Pecley number Pe is preferably 50 or more, preferably 70 or more.
- the type of the inert gas is simply determined and the flow rate thereof is controlled.
- the diffusion coefficient D of the sublimate is a two-component diffusion coefficient of the sublimate and the inert gas, and changes if the molecular weight of the inert gas is different. The larger the molecular weight, the more the sublimate diffuses. Moreover, it becomes difficult to diffuse, so that the flow volume is large.
- the inert gas means a gas that is inert to the above-described sublimation reaction of the reaction product or the object to be processed, and examples thereof include argon, neon, xenon, helium and the like in addition to the above-described nitrogen.
- diffusion prevention from the second gas inlet 15 is not particularly performed.
- nitrogen is also introduced from the second gas inlet 15 so that the sublimate is not introduced. Diffusion may be prevented.
- the diffusion through the first gas introduction port 12 is prevented because the first gas introduction port 12 communicates with the first gas introduction path 11 provided with the plasma generation unit 16 and is used as a sublimate or the like. This is because it is not particularly preferable to be contaminated by the above. That is, by preventing the diffusion of the sublimate from the first gas introduction port 12, contamination of the members constituting the first gas introduction path 11 provided with the plasma generation unit 16 can be prevented, and the number of cleanings can be reduced. At the same time, the durability of the member can be improved, resulting in efficient and low-cost processing.
- the natural oxide film is removed while maintaining the arrangement of the silicon substrate 5 from which the natural oxide film has been removed, that is, in the same vacuum processing tank 3.
- the surface (silicon layer) of the silicon substrate 5 may be etched.
- oxygen on the silicon surface used as the interface of the oxide film for example, oxygen that may exist between the metal lattices of silicon is removed, and the silicon substrate 5 from which oxygen is reliably removed from the surface can be obtained. it can.
- the silicon layer is etched by an apparatus for etching a natural oxide film, oxidation or the like due to transportation does not occur, and the silicon substrate 5 having a high surface cleanliness can be obtained by an extremely simple process.
- a step of etching the silicon layer after the natural oxide film is removed will be described as a third step.
- H radical H * and N radical N * are generated by the plasma generation unit 16, and from the first gas introduction port 12.
- H radical H * and N radical N * are introduced into the vacuum processing tank 3.
- NF 3 gas is introduced into the vacuum processing tank 3 from the second gas inlet 15 of the second shower nozzle 14 to etch the surface of the silicon substrate 5.
- the etching amount of the silicon layer increases according to the etching time, and as shown by ⁇ in FIG. 9, the layers other than the silicon layer (for example, SiN) are etched. It can be seen that the etching amount hardly changes even when the length is increased, and only the silicon layer is etched.
- the processing gas is introduced (ON), the lamp heater is turned off, and the process in which the precursor NH x F y reacts with the natural oxide film SiO 2 is performed ( (Refer FIG. 4 (a) (b)).
- the processing gas is stopped (OFF), the lamp heater is turned ON, the product (NH 4 ) 2 SiF 6 is sublimated, and the natural oxide film SiO 2 is etched (FIG. 4). (See (c) and (d)).
- the processing gas is again introduced (ON) from time t3 to time t4 (for example, 50 to 210 sec).
- time t4 for example, 50 to 210 sec.
- the lamp heater is appropriately turned ON / OFF to maintain the temperature, and the silicon layer is etched (see FIGS. 8A, 8B, and 8C).
- the natural oxide film can be removed and the silicon layer from which the natural oxide film has been removed can be removed within the same vacuum processing tank 3.
- the vacuum processing apparatus 1 for removing the natural oxide film can be used to reliably remove oxygen at the interface of the silicon substrate 5 after the natural oxide film is removed in a short time with simple control. Therefore, the silicon substrate 5 having a surface with extremely high performance can be obtained by the simple vacuum processing apparatus 1 and the processing method.
- the removal of the natural oxide film and the removal of the silicon layer from which the natural oxide film has been removed are used for cleaning the bottom surface of the contact hole 31 of the semiconductor substrate, as shown in FIG. That is, the natural oxide film in the contact hole 31 is removed by sublimation of (NH 4 ) 2 SiF 6 , and then the silicon layer is continuously removed. As a result, the contact hole 31 having a bottom surface from which oxygen is reliably removed can be formed, and then a wiring having extremely low resistance can be realized when a wiring metal is laminated.
- NH 3 gas, N 2 gas, and NF 3 gas are introduced from separate gas introduction means when the silicon layer is etched. All gases may be introduced from the same gas introduction means.
- a so-called batch type film forming apparatus in which a plurality of substrates are arranged in parallel with each other at a predetermined interval inside the processing chamber. However, the substrates are placed one by one in the processing chamber. The processing may be performed by a so-called single-wafer apparatus.
- FIG. 12A shows the result of counting the particles when the batch processing of the silicon substrate was repeated about 100 batches after the first gas introduction path 11 was renewed using the vacuum processing apparatus according to the first embodiment. 3 particles were extracted from about 50 silicon substrates for each batch processing, and the number of particles of 0.2 ⁇ m or more observed on each silicon substrate was counted. The board is indicated by ⁇ , ⁇ , and ⁇ .
- the first gas introduction unit functions as an inert gas introduction unit
- the plasma generation unit 16 is stopped
- the NH 3 gas is stopped to stop the N 2 gas.
- the Pecley number Pe can be estimated to be 20.
- FIG. 12B shows the result of processing about 100 batches by introducing only N 2 gas at a flow rate of 20 L / min from the second processing gas inlet.
- the present invention can be used in the industrial field of a vacuum processing apparatus that performs etching in a vacuum processing chamber.
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Abstract
Description
即ち、
H*+NF3→NHxFy(NH4FH、NH4FHF等)
即ち、
NHxFy+SiO2→(NH4)2SiF6+H2O↑
即ち、
Pe=vL/D
第1実施形態に係る真空処理装置を用い、第1ガス導入路11を新しくした後、シリコン基板のバッチ処理を約100バッチ繰り返した際のパーティクルをカウントした結果を図12(a)に示す。パーティクルは、1回のバッチ処理毎に約50枚のシリコン基板から3枚を抽出し、各シリコン基板上で観察された0.2μm以上のパーティクルの数をカウントした結果であり、3枚のシリコン基板を▲、■、◆で示す。
2 仕込取出槽
3 真空処理槽
4 ターンテーブル
5 シリコン基板
6 ボート
7 送りねじ
8 連通口
9 シャッタ手段
10 排出部
11 第1ガス導入路
12 第1ガス導入口
13 第1シャワーノズル
14 第2シャワーノズル
15 第2ガス導入口
16 プラズマ発生部
17、19 流量調整手段
18 第2ガス導入路
31 コンタクトホール
Claims (11)
- 被処理物が配置されると共に内部が所定の真空状態にされる処理室と、
第1処理ガスをラジカル状態として、前記処理室内に開口する第1処理ガス導入口から当該処理室内に導入する第1処理ガス導入手段と、
ラジカル状態の前記第1処理ガスと反応する第2処理ガスを前記処理室内に開口する第2処理ガス導入口から当該処理室内に導入する第2処理ガス導入手段と、
前記処理室内の温度を、前記ラジカル状態の第1処理ガスと第2処理ガスとが前記被処理物の表面を処理して反応生成物を生成する第1温度制御状態と、生成した反応生成物を昇華させて除去する第2温度制御状態とに制御する温度制御手段と、
前記温度制御手段が前記第2温度制御状態に制御する際に、前記第1処理ガス導入口から不活性ガスを前記処理室内に導入する不活性ガス導入手段とを備えた
ことを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記不活性ガス導入手段は、前記反応生成物の昇華物の前記処理ガス導入口を通過する拡散を防止するよう当該第1処理ガス導入口からの前記不活性ガスの導入状況を制御する導入制御手段を備える
ことを特徴とする真空処理装置。 - 請求項2に記載の真空処理装置において、
前記導入制御手段は、前記不活性ガスの導入状況を、導入される不活性ガスの導入流束と前記反応生成物の昇華物の拡散流束との差の状態を示すペクレー数が10以上となるように制御する
ことを特徴とする真空処理装置。 - 請求項1~3の何れか1項に記載の真空処理装置において、
前記不活性ガス導入手段は、前記第1ガス導入手段を介して前記不活性ガスを導入するように構成されている
ことを特徴とする真空処理装置。 - 請求項1~4の何れか1項に記載の真空処理装置において、
前記第1ガス導入手段は、前記第1ガス導入口へ連通する第1ガス導入路にプラズマ発生部を具備し、当該プラズマ発生部で導入した第1処理ガスをプラズマ状態とするよう構成されている
ことを特徴とする真空処理装置。 - 請求項1~5の何れか1項に記載の真空処理装置において、
前記第1処理ガスがHラジカルを生成させるガスであり、
前記第2処理ガスが少なくともNHxFyを生成させるガスであり、
前記被処理物がシリコン基板である
ことを特徴とする真空処理装置。 - 請求項6に記載の真空処理装置において、
前記第1処理ガスがNH3及びH2の少なくとも何れか一方とN2であり、
前記第2処理ガスがNF3である
ことを特徴とする真空処理装置。 - 請求項6又は7に記載の真空処理装置において、
ラジカル状態の補助処理ガスを前記処理室内に導入する補助ガス導入手段と、
前記補助ガス導入手段から導入される前記補助処理ガスと前記第2ガス導入手段から導入される第2処理ガスの導入状況を制御し、前記処理ガスで処理されて自然酸化膜が除去された前記シリコン基板の表層を、前記補助処理ガスと前記第2処理ガスにより所定の厚さ除去する制御手段とをさらに備えた
ことを特徴とする真空処理装置。 - 請求項8に記載の真空処理装置において、
前記補助ガス導入手段は、前記第1ガス導入手段が兼ねている
ことを特徴とする真空処理装置。 - 請求項8又は9に記載の真空処理装置において、
前記制御手段は、自然酸化膜が除去された前記シリコン基板の表面に前記補助処理ガスと第2処理ガスにより前記シリコン基板のシリコン層を所定の厚さ除去する
ことを特徴とする真空処理装置。 - 被処理物が配置されると共に内部が所定の真空状態にされる処理室に、第1処理ガス導入口から第1処理ガスをラジカル状態として導入すると共に、ラジカル状態の前記第1処理ガスと反応する第2処理ガスを第2処理ガス導入口から導入し、
前記処理室内の温度を、前記ラジカル状態の第1処理ガスと第2処理ガスとが前記被処理物の表面を処理して反応生成物を生成する第1温度制御状態に制御し、次いで、生成した反応生成物を昇華させて除去する第2温度制御状態に制御し、前記第2温度制御状態に制御する際には前記第1処理ガス導入口から不活性ガスを前記処理室内に導入する
ことを特徴とする真空処理方法。
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JP2016154209A (ja) * | 2015-02-16 | 2016-08-25 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2019033249A (ja) * | 2017-07-13 | 2019-02-28 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | 単一処理チャンバー内の半導体膜からの酸化物及び炭素の除去のための装置及び方法 |
US10622205B2 (en) | 2015-02-16 | 2020-04-14 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
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