JP2004119943A
(ja)
*
|
2002-09-30 |
2004-04-15 |
Renesas Technology Corp |
半導体ウェハおよびその製造方法
|
US20050116290A1
(en)
|
2003-12-02 |
2005-06-02 |
De Souza Joel P. |
Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
|
US7291886B2
(en)
*
|
2004-06-21 |
2007-11-06 |
International Business Machines Corporation |
Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
|
US7253034B2
(en)
*
|
2004-07-29 |
2007-08-07 |
International Business Machines Corporation |
Dual SIMOX hybrid orientation technology (HOT) substrates
|
US7354806B2
(en)
*
|
2004-09-17 |
2008-04-08 |
International Business Machines Corporation |
Semiconductor device structure with active regions having different surface directions and methods
|
US7235433B2
(en)
|
2004-11-01 |
2007-06-26 |
Advanced Micro Devices, Inc. |
Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device
|
DE102004057764B4
(de)
*
|
2004-11-30 |
2013-05-16 |
Advanced Micro Devices, Inc. |
Verfahren zur Herstellung eines Substrats mit kristallinen Halbleitergebieten mit unterschiedlichen Eigenschaften, die über einem kristallinen Vollsubstrat angeordnet sind und damit hergestelltes Halbleiterbauelement
|
US7393733B2
(en)
*
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
US7422956B2
(en)
*
|
2004-12-08 |
2008-09-09 |
Advanced Micro Devices, Inc. |
Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers
|
US7285473B2
(en)
*
|
2005-01-07 |
2007-10-23 |
International Business Machines Corporation |
Method for fabricating low-defect-density changed orientation Si
|
US8138061B2
(en)
*
|
2005-01-07 |
2012-03-20 |
International Business Machines Corporation |
Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide
|
US20060175659A1
(en)
*
|
2005-02-07 |
2006-08-10 |
International Business Machines Corporation |
A cmos structure for body ties in ultra-thin soi (utsoi) substrates
|
US7547917B2
(en)
*
|
2005-04-06 |
2009-06-16 |
International Business Machines Corporation |
Inverted multilayer semiconductor device assembly
|
US7250351B2
(en)
*
|
2005-04-14 |
2007-07-31 |
International Business Machines Corporation |
Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors
|
US7291539B2
(en)
*
|
2005-06-01 |
2007-11-06 |
International Business Machines Corporation |
Amorphization/templated recrystallization method for hybrid orientation substrates
|
US7358164B2
(en)
*
|
2005-06-16 |
2008-04-15 |
International Business Machines Corporation |
Crystal imprinting methods for fabricating substrates with thin active silicon layers
|
US7473985B2
(en)
*
|
2005-06-16 |
2009-01-06 |
International Business Machines Corporation |
Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates
|
US7439108B2
(en)
*
|
2005-06-16 |
2008-10-21 |
International Business Machines Corporation |
Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same
|
US7344962B2
(en)
*
|
2005-06-21 |
2008-03-18 |
International Business Machines Corporation |
Method of manufacturing dual orientation wafers
|
US7217629B2
(en)
*
|
2005-07-15 |
2007-05-15 |
International Business Machines Corporation |
Epitaxial imprinting
|
US20070040235A1
(en)
*
|
2005-08-19 |
2007-02-22 |
International Business Machines Corporation |
Dual trench isolation for CMOS with hybrid orientations
|
DE102005052055B3
(de)
*
|
2005-10-31 |
2007-04-26 |
Advanced Micro Devices, Inc., Sunnyvale |
Eingebettete Verformungsschicht in dünnen SOI-Transistoren und Verfahren zur Herstellung desselben
|
WO2007053382A1
(en)
*
|
2005-10-31 |
2007-05-10 |
Advanced Micro Devices, Inc. |
An embedded strain layer in thin soi transistors and a method of forming the same
|
US7535089B2
(en)
*
|
2005-11-01 |
2009-05-19 |
Massachusetts Institute Of Technology |
Monolithically integrated light emitting devices
|
US7986029B2
(en)
*
|
2005-11-08 |
2011-07-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Dual SOI structure
|
US7288458B2
(en)
*
|
2005-12-14 |
2007-10-30 |
Freescale Semiconductor, Inc. |
SOI active layer with different surface orientation
|
US7569466B2
(en)
*
|
2005-12-16 |
2009-08-04 |
International Business Machines Corporation |
Dual metal gate self-aligned integration
|
US7436034B2
(en)
*
|
2005-12-19 |
2008-10-14 |
International Business Machines Corporation |
Metal oxynitride as a pFET material
|
US8319285B2
(en)
*
|
2005-12-22 |
2012-11-27 |
Infineon Technologies Ag |
Silicon-on-insulator chip having multiple crystal orientations
|
US8530355B2
(en)
*
|
2005-12-23 |
2013-09-10 |
Infineon Technologies Ag |
Mixed orientation semiconductor device and method
|
US7432567B2
(en)
*
|
2005-12-28 |
2008-10-07 |
International Business Machines Corporation |
Metal gate CMOS with at least a single gate metal and dual gate dielectrics
|
US7833849B2
(en)
|
2005-12-30 |
2010-11-16 |
International Business Machines Corporation |
Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode
|
US7425497B2
(en)
|
2006-01-20 |
2008-09-16 |
International Business Machines Corporation |
Introduction of metal impurity to change workfunction of conductive electrodes
|
US7285452B2
(en)
*
|
2006-02-10 |
2007-10-23 |
Sadaka Mariam G |
Method to selectively form regions having differing properties and structure
|
US7531392B2
(en)
*
|
2006-02-27 |
2009-05-12 |
International Business Machines Corporation |
Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
|
US20070215984A1
(en)
*
|
2006-03-15 |
2007-09-20 |
Shaheen Mohamad A |
Formation of a multiple crystal orientation substrate
|
US7396407B2
(en)
*
|
2006-04-18 |
2008-07-08 |
International Business Machines Corporation |
Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
|
US7521307B2
(en)
*
|
2006-04-28 |
2009-04-21 |
International Business Machines Corporation |
CMOS structures and methods using self-aligned dual stressed layers
|
US7452784B2
(en)
|
2006-05-25 |
2008-11-18 |
International Business Machines Corporation |
Formation of improved SOI substrates using bulk semiconductor wafers
|
US7435639B2
(en)
*
|
2006-05-31 |
2008-10-14 |
Freescale Semiconductor, Inc. |
Dual surface SOI by lateral epitaxial overgrowth
|
US20080048269A1
(en)
*
|
2006-08-25 |
2008-02-28 |
International Business Machines Corporation |
Method of fabricating structure for integrated circuit incorporating hybrid orientation technology and trench isolation regions
|
US7595232B2
(en)
|
2006-09-07 |
2009-09-29 |
International Business Machines Corporation |
CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors
|
US7820501B2
(en)
*
|
2006-10-11 |
2010-10-26 |
International Business Machines Corporation |
Decoder for a stationary switch machine
|
US20080128821A1
(en)
*
|
2006-12-04 |
2008-06-05 |
Texas Instruments Incorporated |
Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology
|
US20080164572A1
(en)
*
|
2006-12-21 |
2008-07-10 |
Covalent Materials Corporation |
Semiconductor substrate and manufacturing method thereof
|
JP2008177529A
(ja)
*
|
2006-12-21 |
2008-07-31 |
Covalent Materials Corp |
半導体基板およびその製造方法
|
US20080169535A1
(en)
*
|
2007-01-12 |
2008-07-17 |
International Business Machines Corporation |
Sub-lithographic faceting for mosfet performance enhancement
|
US8016941B2
(en)
*
|
2007-02-05 |
2011-09-13 |
Infineon Technologies Ag |
Method and apparatus for manufacturing a semiconductor
|
US7611979B2
(en)
*
|
2007-02-12 |
2009-11-03 |
International Business Machines Corporation |
Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks
|
US7608522B2
(en)
*
|
2007-03-11 |
2009-10-27 |
United Microelectronics Corp. |
Method for fabricating a hybrid orientation substrate
|
US9034102B2
(en)
*
|
2007-03-29 |
2015-05-19 |
United Microelectronics Corp. |
Method of fabricating hybrid orientation substrate and structure of the same
|
US20080248626A1
(en)
*
|
2007-04-05 |
2008-10-09 |
International Business Machines Corporation |
Shallow trench isolation self-aligned to templated recrystallization boundary
|
US7651902B2
(en)
*
|
2007-04-20 |
2010-01-26 |
International Business Machines Corporation |
Hybrid substrates and methods for forming such hybrid substrates
|
FR2915318B1
(fr)
*
|
2007-04-20 |
2009-07-17 |
St Microelectronics Crolles 2 |
Procede de realisation d'un circuit electronique integre a deux portions de couches actives ayant des orientations cristallines differentes
|
US7750406B2
(en)
*
|
2007-04-20 |
2010-07-06 |
International Business Machines Corporation |
Design structure incorporating a hybrid substrate
|
US7575968B2
(en)
*
|
2007-04-30 |
2009-08-18 |
Freescale Semiconductor, Inc. |
Inverse slope isolation and dual surface orientation integration
|
US7547641B2
(en)
*
|
2007-06-05 |
2009-06-16 |
International Business Machines Corporation |
Super hybrid SOI CMOS devices
|
FR2917235B1
(fr)
*
|
2007-06-06 |
2010-09-03 |
Soitec Silicon On Insulator |
Procede de realisation de composants hybrides.
|
FR2913815A1
(fr)
*
|
2007-06-06 |
2008-09-19 |
Soitec Silicon On Insulator |
PROCEDE DE CO-INTEGRATION DE SEMI-CONDUCTEURS, EN PARTICULIER SOI ET GeOI OU GaAsOI
|
US7989306B2
(en)
*
|
2007-06-29 |
2011-08-02 |
International Business Machines Corporation |
Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate
|
US20090008725A1
(en)
*
|
2007-07-03 |
2009-01-08 |
International Business Machines Corporation |
Method for deposition of an ultra-thin electropositive metal-containing cap layer
|
FR2918793B1
(fr)
*
|
2007-07-11 |
2009-10-09 |
Commissariat Energie Atomique |
Procede de fabrication d'un substrat semiconducteur-sur- isolant pour la microelectronique et l'optoelectronique.
|
US8803195B2
(en)
*
|
2007-08-02 |
2014-08-12 |
Wisconsin Alumni Research Foundation |
Nanomembrane structures having mixed crystalline orientations and compositions
|
US7808020B2
(en)
*
|
2007-10-09 |
2010-10-05 |
International Business Machines Corporation |
Self-assembled sidewall spacer
|
US8105960B2
(en)
*
|
2007-10-09 |
2012-01-31 |
International Business Machines Corporation |
Self-assembled sidewall spacer
|
US7863712B2
(en)
*
|
2007-10-30 |
2011-01-04 |
International Business Machines Corporation |
Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same
|
US7696573B2
(en)
*
|
2007-10-31 |
2010-04-13 |
International Business Machines Corporation |
Multiple crystallographic orientation semiconductor structures
|
US8043947B2
(en)
*
|
2007-11-16 |
2011-10-25 |
Texas Instruments Incorporated |
Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate
|
US8288756B2
(en)
*
|
2007-11-30 |
2012-10-16 |
Advanced Micro Devices, Inc. |
Hetero-structured, inverted-T field effect transistor
|
WO2009095813A1
(en)
*
|
2008-01-28 |
2009-08-06 |
Nxp B.V. |
A method for fabricating a dual-orientation group-iv semiconductor substrate
|
WO2009128776A1
(en)
*
|
2008-04-15 |
2009-10-22 |
Vallin Oerjan |
Hybrid wafers with hybrid-oriented layer
|
US8241970B2
(en)
|
2008-08-25 |
2012-08-14 |
International Business Machines Corporation |
CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins
|
JP2010072209A
(ja)
*
|
2008-09-17 |
2010-04-02 |
Fuji Xerox Co Ltd |
静電荷像現像用トナー、静電荷像現像用トナーの製造方法、静電荷像現像用現像剤および画像形成装置
|
FR2938117B1
(fr)
*
|
2008-10-31 |
2011-04-15 |
Commissariat Energie Atomique |
Procede d'elaboration d'un substrat hybride ayant une couche continue electriquement isolante enterree
|
FR2942674B1
(fr)
*
|
2009-02-27 |
2011-12-16 |
Commissariat Energie Atomique |
Procede d'elaboration d'un substrat hybride par recristallisation partielle d'une couche mixte
|
US8227307B2
(en)
*
|
2009-06-24 |
2012-07-24 |
International Business Machines Corporation |
Method for removing threshold voltage adjusting layer with external acid diffusion process
|
US8105892B2
(en)
*
|
2009-08-18 |
2012-01-31 |
International Business Machines Corporation |
Thermal dual gate oxide device integration
|
US8022488B2
(en)
|
2009-09-24 |
2011-09-20 |
International Business Machines Corporation |
High-performance FETs with embedded stressors
|
US7943458B2
(en)
*
|
2009-10-06 |
2011-05-17 |
International Business Machines Corporation |
Methods for obtaining gate stacks with tunable threshold voltage and scaling
|
US8288222B2
(en)
|
2009-10-20 |
2012-10-16 |
International Business Machines Corporation |
Application of cluster beam implantation for fabricating threshold voltage adjusted FETs
|
US8035141B2
(en)
|
2009-10-28 |
2011-10-11 |
International Business Machines Corporation |
Bi-layer nFET embedded stressor element and integration to enhance drive current
|
FR2954584B1
(fr)
*
|
2009-12-22 |
2013-07-19 |
Commissariat Energie Atomique |
Substrat hybride a isolation amelioree et procede de realisation simplifie d'un substrat hybride
|
US8445974B2
(en)
|
2010-01-07 |
2013-05-21 |
International Business Machines Corporation |
Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same
|
US8299530B2
(en)
|
2010-03-04 |
2012-10-30 |
International Business Machines Corporation |
Structure and method to fabricate pFETS with superior GIDL by localizing workfunction
|
US8450807B2
(en)
|
2010-03-09 |
2013-05-28 |
International Business Machines Corporation |
MOSFETs with reduced contact resistance
|
KR101642834B1
(ko)
|
2010-04-09 |
2016-08-11 |
삼성전자주식회사 |
Leg 공정을 이용하여 벌크 실리콘 웨이퍼의 필요한 영역내에 soⅰ층을 형성하는 반도체 소자의 제조방법
|
US8236660B2
(en)
|
2010-04-21 |
2012-08-07 |
International Business Machines Corporation |
Monolayer dopant embedded stressor for advanced CMOS
|
US8299535B2
(en)
|
2010-06-25 |
2012-10-30 |
International Business Machines Corporation |
Delta monolayer dopants epitaxy for embedded source/drain silicide
|
US8361889B2
(en)
|
2010-07-06 |
2013-01-29 |
International Business Machines Corporation |
Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator
|
US8962417B2
(en)
|
2010-10-15 |
2015-02-24 |
International Business Machines Corporation |
Method and structure for pFET junction profile with SiGe channel
|
US8659054B2
(en)
|
2010-10-15 |
2014-02-25 |
International Business Machines Corporation |
Method and structure for pFET junction profile with SiGe channel
|
US8466473B2
(en)
|
2010-12-06 |
2013-06-18 |
International Business Machines Corporation |
Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
|
US8564063B2
(en)
|
2010-12-07 |
2013-10-22 |
United Microelectronics Corp. |
Semiconductor device having metal gate and manufacturing method thereof
|
US8536656B2
(en)
|
2011-01-10 |
2013-09-17 |
International Business Machines Corporation |
Self-aligned contacts for high k/metal gate process flow
|
US8643115B2
(en)
|
2011-01-14 |
2014-02-04 |
International Business Machines Corporation |
Structure and method of Tinv scaling for high κ metal gate technology
|
CN102790084B
(zh)
*
|
2011-05-16 |
2016-03-16 |
中国科学院上海微系统与信息技术研究所 |
锗和iii-v混合共平面的soi半导体结构及其制备方法
|
US8432002B2
(en)
*
|
2011-06-28 |
2013-04-30 |
International Business Machines Corporation |
Method and structure for low resistive source and drain regions in a replacement metal gate process flow
|
US9064808B2
(en)
*
|
2011-07-25 |
2015-06-23 |
Synopsys, Inc. |
Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
|
US8609550B2
(en)
|
2011-09-08 |
2013-12-17 |
Synopsys, Inc. |
Methods for manufacturing integrated circuit devices having features with reduced edge curvature
|
FR2983342B1
(fr)
*
|
2011-11-30 |
2016-05-20 |
Soitec Silicon On Insulator |
Procede de fabrication d'une heterostructure limitant la formation de defauts et heterostructure ainsi obtenue
|
CN102768982A
(zh)
*
|
2012-07-06 |
2012-11-07 |
上海新傲科技股份有限公司 |
带有绝缘埋层的混合晶向衬底的制备方法
|
CN102768983A
(zh)
*
|
2012-07-12 |
2012-11-07 |
上海新傲科技股份有限公司 |
带有绝缘埋层的混合晶向衬底的制备方法
|
JP2014093319A
(ja)
*
|
2012-10-31 |
2014-05-19 |
Toshiba Corp |
半導体装置およびその製造方法
|
CN103871813A
(zh)
*
|
2012-12-14 |
2014-06-18 |
中国科学院微电子研究所 |
一种半导体离子注入均匀性的改善方法
|
FR3003685B1
(fr)
|
2013-03-21 |
2015-04-17 |
St Microelectronics Crolles 2 |
Procede de modification localisee des contraintes dans un substrat du type soi, en particulier fd soi, et dispositif correspondant
|
US9059095B2
(en)
|
2013-04-22 |
2015-06-16 |
International Business Machines Corporation |
Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
|
US8999791B2
(en)
|
2013-05-03 |
2015-04-07 |
International Business Machines Corporation |
Formation of semiconductor structures with variable gate lengths
|
US9214567B2
(en)
|
2013-09-06 |
2015-12-15 |
Globalfoundries Inc. |
Nanowire compatible E-fuse
|
US8951868B1
(en)
|
2013-11-05 |
2015-02-10 |
International Business Machines Corporation |
Formation of functional gate structures with different critical dimensions using a replacement gate process
|
CN103745952B
(zh)
*
|
2013-12-25 |
2016-04-06 |
上海新傲科技股份有限公司 |
带有绝缘埋层的混晶衬底的制备方法
|
US9595525B2
(en)
|
2014-02-10 |
2017-03-14 |
International Business Machines Corporation |
Semiconductor device including nanowire transistors with hybrid channels
|
US9093425B1
(en)
|
2014-02-11 |
2015-07-28 |
International Business Machines Corporation |
Self-aligned liner formed on metal semiconductor alloy contacts
|
US9184290B2
(en)
|
2014-04-02 |
2015-11-10 |
International Business Machines Corporation |
Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
|
US9293375B2
(en)
|
2014-04-24 |
2016-03-22 |
International Business Machines Corporation |
Selectively grown self-aligned fins for deep isolation integration
|
US9490161B2
(en)
|
2014-04-29 |
2016-11-08 |
International Business Machines Corporation |
Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same
|
US9331076B2
(en)
|
2014-05-02 |
2016-05-03 |
International Business Machines Corporation |
Group III nitride integration with CMOS technology
|
US10056293B2
(en)
*
|
2014-07-18 |
2018-08-21 |
International Business Machines Corporation |
Techniques for creating a local interconnect using a SOI wafer
|
US9412840B1
(en)
|
2015-05-06 |
2016-08-09 |
International Business Machines Corporation |
Sacrificial layer for replacement metal semiconductor alloy contact formation
|
US9666493B2
(en)
|
2015-06-24 |
2017-05-30 |
International Business Machines Corporation |
Semiconductor device structure with 110-PFET and 111-NFET curent flow direction
|
FR3076292B1
(fr)
*
|
2017-12-28 |
2020-01-03 |
Commissariat A L'energie Atomique Et Aux Energies Alternatives |
Procede de transfert d'une couche utile sur un substrat support
|
US11139402B2
(en)
|
2018-05-14 |
2021-10-05 |
Synopsys, Inc. |
Crystal orientation engineering to achieve consistent nanowire shapes
|
US11011411B2
(en)
*
|
2019-03-22 |
2021-05-18 |
International Business Machines Corporation |
Semiconductor wafer having integrated circuits with bottom local interconnects
|
US11264458B2
(en)
|
2019-05-20 |
2022-03-01 |
Synopsys, Inc. |
Crystal orientation engineering to achieve consistent nanowire shapes
|
US11854816B2
(en)
*
|
2021-08-27 |
2023-12-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor devices and methods of manufacturing thereof
|