JP2007525836A5 - - Google Patents

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Publication number
JP2007525836A5
JP2007525836A5 JP2006552706A JP2006552706A JP2007525836A5 JP 2007525836 A5 JP2007525836 A5 JP 2007525836A5 JP 2006552706 A JP2006552706 A JP 2006552706A JP 2006552706 A JP2006552706 A JP 2006552706A JP 2007525836 A5 JP2007525836 A5 JP 2007525836A5
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JP
Japan
Prior art keywords
composition
inhibiting compound
corrosion inhibiting
cleaning
group
Prior art date
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Application number
JP2006552706A
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English (en)
Japanese (ja)
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JP2007525836A (ja
JP4550838B2 (ja
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Publication date
Priority claimed from US10/956,273 external-priority patent/US7435712B2/en
Application filed filed Critical
Publication of JP2007525836A publication Critical patent/JP2007525836A/ja
Publication of JP2007525836A5 publication Critical patent/JP2007525836A5/ja
Application granted granted Critical
Publication of JP4550838B2 publication Critical patent/JP4550838B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006552706A 2004-02-12 2005-01-12 化学機械平坦化の後洗浄用の改良されたアルカリ化学製品 Expired - Fee Related JP4550838B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54427204P 2004-02-12 2004-02-12
US10/956,273 US7435712B2 (en) 2004-02-12 2004-10-01 Alkaline chemistry for post-CMP cleaning
PCT/IB2005/000081 WO2005085408A1 (en) 2004-02-12 2005-01-12 Improved alkaline chemistry for post-cmp cleaning

Publications (3)

Publication Number Publication Date
JP2007525836A JP2007525836A (ja) 2007-09-06
JP2007525836A5 true JP2007525836A5 (enExample) 2008-02-28
JP4550838B2 JP4550838B2 (ja) 2010-09-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006552706A Expired - Fee Related JP4550838B2 (ja) 2004-02-12 2005-01-12 化学機械平坦化の後洗浄用の改良されたアルカリ化学製品

Country Status (8)

Country Link
US (1) US7435712B2 (enExample)
EP (1) EP1720965B1 (enExample)
JP (1) JP4550838B2 (enExample)
KR (1) KR101087916B1 (enExample)
CN (1) CN1906287A (enExample)
AT (1) ATE432974T1 (enExample)
DE (1) DE602005014746D1 (enExample)
WO (1) WO2005085408A1 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
CA2575885A1 (en) * 2004-08-03 2006-02-16 Chemetall Gmbh Method for protecting a metal surface by means of a corrosion-inhibiting coating
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI393178B (zh) * 2005-01-27 2013-04-11 Advanced Tech Materials 半導體基板處理用之組成物
US20090288688A1 (en) * 2005-03-11 2009-11-26 Ron Rulkens Non-corrosive chemical rinse system
US7879782B2 (en) 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
US7951717B2 (en) * 2007-03-06 2011-05-31 Kabushiki Kaisha Toshiba Post-CMP treating liquid and manufacturing method of semiconductor device using the same
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US7709400B2 (en) * 2007-05-08 2010-05-04 Lam Research Corporation Thermal methods for cleaning post-CMP wafers
US20080286471A1 (en) * 2007-05-18 2008-11-20 Doubleday Marc D Protective gel for an electrical connection
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US20100062164A1 (en) 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
CN101463295B (zh) * 2008-11-28 2011-08-17 江苏海迅实业集团股份有限公司 半导体工业用清洗剂
KR101132303B1 (ko) * 2009-02-16 2012-04-05 주식회사 하이닉스반도체 반도체 소자의 구리배선 형성방법
WO2011000758A1 (en) 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
CN103003405B (zh) 2010-07-19 2016-04-13 巴斯夫欧洲公司 含水碱性清洁组合物及其应用方法
CN101908503A (zh) * 2010-07-21 2010-12-08 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
CN101908502B (zh) * 2010-07-21 2012-07-04 河北工业大学 极大规模集成电路钨插塞cmp后表面洁净方法
US20130261040A1 (en) * 2010-11-29 2013-10-03 Wako Pure Chemical Industries, Ltd. Substrate cleaner for copper wiring, and method for cleaning copper wiring semiconductor substrate
CN102623327B (zh) * 2011-01-31 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
JP5817310B2 (ja) * 2011-08-08 2015-11-18 三菱化学株式会社 半導体デバイス用基板の洗浄液及び洗浄方法
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
JP2014154625A (ja) * 2013-02-06 2014-08-25 Mitsubishi Chemicals Corp 半導体デバイス用基板の洗浄液及び洗浄方法
US20160060584A1 (en) 2013-04-10 2016-03-03 Wako Pure Chemical Industries, Ltd. Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
TWI642777B (zh) 2013-11-08 2018-12-01 日商富士軟片和光純藥股份有限公司 半導體基板用洗淨劑及半導體基板表面之處理方法
KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
DE102014105823A1 (de) * 2014-04-25 2015-10-29 Harting Kgaa Nachreinigungsverfahren von metallischen Kontaktelementen
TWI636131B (zh) 2014-05-20 2018-09-21 日商Jsr股份有限公司 清洗用組成物及清洗方法
KR102326028B1 (ko) 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
CN106854461A (zh) * 2016-12-11 2017-06-16 周益铭 一种高渗透快速注水井除垢剂的制备方法
CN108998267A (zh) * 2018-08-29 2018-12-14 李少伟 一种半导体器件防蚀剂清洗剂及制备方法
US20220041931A1 (en) * 2018-12-18 2022-02-10 Tokuyama Corporation Silicon Etching Liquid
CN109988676A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 一种清洗液、其制备方法和应用
CN109988675A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 长效型化学机械抛光后清洗液、其制备方法和应用
KR102397700B1 (ko) 2019-09-06 2022-05-17 엘티씨 (주) 세정제 조성물
JP7365427B2 (ja) 2019-11-22 2023-10-19 富士フイルム株式会社 洗浄液、洗浄方法
US20230174892A1 (en) 2020-05-11 2023-06-08 Daicel Corporation Detergent composition and chemical-mechanical polishing composition
CN112981404B (zh) * 2021-02-05 2022-10-28 四川和晟达电子科技有限公司 一种钛合金蚀刻液组合物及其使用方法
EP4282945A3 (en) * 2022-05-27 2024-03-13 Samsung Electronics Co., Ltd. Cleaning composition, method of cleaning metal-containing film and method of manufacturing semiconductor device
CN117946812A (zh) * 2022-10-18 2024-04-30 安集微电子科技(上海)股份有限公司 一种清洗组合物
CN118440680B (zh) * 2024-04-30 2024-10-22 寿光新海能源技术有限公司 一种耐高温酸化用缓蚀剂及其制备方法
CN119144964B (zh) * 2024-11-14 2025-04-08 大连奥首科技有限公司 一种半导体芯片cmp后清洗液、其制备方法与应用

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2041114A1 (en) * 1990-05-17 1991-11-18 Donnie R. Juen Low leaching uv curable sealant and encapsulant with post cure mechanism
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
JPH09151151A (ja) * 1995-12-01 1997-06-10 Idemitsu Petrochem Co Ltd 4−メトキシフェノールの製造方法
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP4565741B2 (ja) * 1998-05-18 2010-10-20 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス基板洗浄用珪酸塩含有アルカリ組成物
ATE436043T1 (de) * 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
TW500831B (en) 1999-01-20 2002-09-01 Sumitomo Chemical Co Metal-corrosion inhibitor and cleaning liquid
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6673757B1 (en) 2000-03-22 2004-01-06 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
JP4256994B2 (ja) * 1999-10-05 2009-04-22 日本エレクトロプレイテイング・エンジニヤース株式会社 回路基板の実装方法及び金めっき液並びに金めっき方法
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
JP3869608B2 (ja) * 2000-01-25 2007-01-17 Necエレクトロニクス株式会社 防食剤
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
US7375066B2 (en) * 2000-03-21 2008-05-20 Wako Pure Chemical Industries, Ltd. Semiconductor wafer cleaning agent and cleaning method
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP2002053971A (ja) * 2000-08-03 2002-02-19 Sony Corp めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置
US6498131B1 (en) 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
JP2002110679A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US6635118B2 (en) 2001-01-17 2003-10-21 International Business Machines Corporation Aqueous cleaning of polymer apply equipment
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
JP4945857B2 (ja) 2001-06-13 2012-06-06 Jsr株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3797541B2 (ja) 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
US20030052308A1 (en) * 2001-09-19 2003-03-20 Shao-Chung Hu Slurry composition of chemical mechanical polishing
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
JP2003195075A (ja) * 2001-12-26 2003-07-09 Jsr Corp 光導波路
JP2003332426A (ja) * 2002-05-17 2003-11-21 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US20050205835A1 (en) 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide

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