WO2005085408A1 - Improved alkaline chemistry for post-cmp cleaning - Google Patents

Improved alkaline chemistry for post-cmp cleaning Download PDF

Info

Publication number
WO2005085408A1
WO2005085408A1 PCT/IB2005/000081 IB2005000081W WO2005085408A1 WO 2005085408 A1 WO2005085408 A1 WO 2005085408A1 IB 2005000081 W IB2005000081 W IB 2005000081W WO 2005085408 A1 WO2005085408 A1 WO 2005085408A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
composition
corrosion
cleaning
inhibiting compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2005/000081
Other languages
English (en)
French (fr)
Inventor
Matthew L. Fisher
Ashutosh Misra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA a Directoire et Conseil de Surveillance pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA a Directoire et Conseil de Surveillance pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Priority to KR1020067013345A priority Critical patent/KR101087916B1/ko
Priority to EP05702248A priority patent/EP1720965B1/en
Priority to CNA2005800019365A priority patent/CN1906287A/zh
Priority to JP2006552706A priority patent/JP4550838B2/ja
Priority to AT05702248T priority patent/ATE432974T1/de
Priority to DE602005014746T priority patent/DE602005014746D1/de
Publication of WO2005085408A1 publication Critical patent/WO2005085408A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2072—Aldehydes-ketones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/22—Carbohydrates or derivatives thereof
    • C11D3/221—Mono, di- or trisaccharides or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3481—Organic compounds containing sulfur containing sulfur in a heterocyclic ring, e.g. sultones or sulfolanes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3272—Urea, guanidine or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • a "semiconductor work-piece” is a microelectronic device that has not completed the fabrication process, typically a silicon wafer with active regions formed in or on the surface of the silicon wafer. Connections to the active regions are made using multiple layers of metal, typically copper and tungsten, which has been deposited on the silicon substrate.
  • a damascene process is used whereby the copper is deposited into lines etched into the inter-layer dielectric and then the excess copper is removed and the surface planarized using a CMP process, followed by a cleaning step.
  • Post-CMP cleaning The goal of the cleaning process- (“Post-CMP cleaning”) is to remove residues left by the CMP step from the semiconductor work-piece surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the semiconductor work-piece. Furthermore, it is desirable to protect the metal surfaces from corrosion by various mechanisms such as chemical etching, galvanic corrosion or photo-induced corrosion. Corrosion of the metal surfaces results in metal recess and thinning of the metal lines. Since neutral to alkaline slurries are often utilized in copper and barrier CMP, it is desirable to have a cleaning solution that is effective in the alkaline pH regime where the abrasive particles are highly charged and can be removed efficiently.
  • a cleaning solution may contain various chemicals that perform different functions during the cleaning process.
  • a cleaning solution must contain a "cleaning agent.”
  • a “cleaning agent” is the component of solution that removes residual CMP slurry particles, typically particles of metal, from the surface of the semiconductor work-piece.
  • a cleaning solution may also contain "chelating agents,” “corrosion-inhibiting compounds,” and/or “surface-active agents.” A “chelating agent” helps prevent re-deposition of removed metal onto the semiconductor work-piece by complexing the metal in the cleaning solution.
  • a “corrosion-inhibiting compound” is the component of the cleaning solution that protects the metal surface from attack by mechanisms such as the aggressive nature of the cleaning solution, oxidation, post cleaning corrosion, galvanic attack, or photo- induced attack.
  • a “surface-active agent” is a component of the cleaning solution that modifies the wetting characteristics and prevents watermark formation.
  • U.S. Patents 6,200,947, 6,194,366, and 6,492,308 disclose relevant to the chemistries of cleaning solutions. However, these references suffer from one or more of the disadvantages discussed below. The ability of the cleaning chemistry to remove residual metals and retain them in the cleaning solution is an important characteristic of a Post- CMP cleaning solution.
  • Chemicals that can complex the residual metal in the cleaning solution are effective cleaning agents because the residual metals are not re-deposited on the semiconductor work-piece after they are removed. Cleaning solutions using chemistry that cannot complex the residual metals typically perform poorly at the desired cleaning task. Thus, it is desirable to have a cleaning solution that includes a chelating agent.
  • Some commercially available alkaline chemistries have poor performance at the desired function of removing residual metal, particularly copper, from dielectric lines because the do not contain a chelating agent.
  • Such chemistries typically comprise an aliphatic alcohol compound containing a mercapto group, such as 2-mercaptoethanol orthioglycerol, and a solution of an alkaline compound, such as a hydroxide.
  • the metal surfaces of the semiconductor work-piece typically copper, form the conducting paths of the semiconductor wafer. Due to the very small size of features on semiconductor wafers, the metal lines are as thin as possible while still carrying the desired electric current. Any corrosion on the surface or recess of the metal causes thinning of the lines (dissolution) and results in poor performance or failure of the semiconductor device.
  • the cleaning solution's corrosion preventing abilities are quantified by measuring the static etch rate or the surface roughness (quantified by RMS, root mean square, value) of a metal surface that has been cleaned with the subject solution. A high static etch rate indicates dissolution of the metal surface is occurring.
  • a high RMS value indicates a rough surface caused by attack of the metal at the grain boundaries.
  • An effective corrosion-inhibiting compound reduces the corrosion of the metal as indicated by lower static etch rate and RMS values measured after the cleaning step. Corrosion-inhibiting compounds function by either reducing the surface of the metal, providing a protection film on the surface of the metal, or scavenging oxygen.
  • Some cleaning solutions available in the art do not provide effective corrosion-inhibiting agents and thus suffer from a high static etch rate and/or high RMS value.
  • Some commercially available alkaline cleaning chemistries are affected by exposure to air and/or have a high static etch rate of the metal.
  • Such chemistries typically contain a quaternary ammonium hydroxide, such as TMAH, a corrosion-inhibitor of the oxygen scavenging type, such as gallic acid or ascorbic acid, and an organic amine, such as monoethanolamine. Because these chemistries rely on an oxygen scavenger to prevent corrosion, exposure to air is detrimental to the performance of the chemical. Also, the lack of a protective surface film and the aggressiveness of the chemistries towards the metal result in a high static etch rate, which then causes recessed lines. Another common problem with cleaning semiconductor surfaces is the deposition of contaminants on the surface of the semiconductor device. Any cleaning solutions that deposit even a few molecules of undesirable composition will adversely affect the performance of the semiconductor device.
  • TMAH quaternary ammonium hydroxide
  • a corrosion-inhibitor of the oxygen scavenging type such as gallic acid or ascorbic acid
  • an organic amine such as monoethanolamine
  • Cleaning solutions that require a rinsing step can also result in depositing contaminants on the surface.
  • a cleaning chemistry that will not leave any residue on the semiconductor surface.
  • Some chemistries for planarizing a wafer surface include a cleaning step followed by an additional step of rinsing with water or an inhibitor solution. Rinsing, particularly with water, can result in leaving deposits on the surface of the semiconductor work-piece, thus contaminating the wafer.
  • Adding a second step is also a drawback due to the fact that it lengthens the manufacturing process, complicates the process by having to handle more chemicals and more steps, and provides one more possible source of contamination or other quality control problems.
  • a process that cleans and protects the surface of the semiconductor work-piece is desirable. It may also be desirable to have a surface wetting agent in the cleaning solution. Surface wetting agents prevent contamination of the semiconductor work-piece by helping to stop spotting of the surface caused by droplets clinging to the surface. Spotting (also called watermarks) on the surface can saturate metrology tools that measure light point defects, thus masking defects in the semiconductor work-piece. For the foregoing reasons, it is desirable to provide an alkaline chemistry that protects the metal from corrosion, prevents oxidation of the metal surface, removes particles efficiently, removes metal from the dielectric surface, is close to the pH of the prior CMP step, and does not contaminate the semi conductor surface. The chemistry of the current invention makes use of multiple additives to provide a solution that fulfills all of the above needs.
  • This invention relates to cleaning chemicals used after Chemical Mechanical Planarization (CMP) of semiconductor substrates containing metal, particularly copper.
  • CMP Chemical Mechanical Planarization
  • Alkaline chemistries are often utilized in a brush scrubber or megasonic cleaning unit for removal of slurry particles and organic residues from the wafer surface.
  • the current invention is a composition of a cleaning solution for cleaning a semiconductor work-piece that satisfies the need to protect the metal from corrosion, prevents oxidation of the metal surface, removes particles efficiently, removes metal from the dielectric surface, is close to the pH of the prior CMP step, and does not contaminate the semi conductor surface. Furthermore, the cleaning and protecting the metal surfaces are completed in a single step with a single solution.
  • the cleaning solution of the current invention is alkaline in nature to match the pH of alkaline CMP slurries.
  • Silica based CMP slurries are often stabilized in the alkaline pH region where the particles exhibit a highly negative surface charge.
  • Cleaning with an alkaline pH chemistry results in efficient particle removal due to the charge on the particles and their repulsion from the similarly charged surface.
  • a chelating agent is present to complex metal ions in solution, facilitating the removal of copper from the dielectric and preventing metal re-deposition onto the wafer.
  • the cleaning solution also contains a corrosion-inhibiting agent that prevents the oxidation of copper and minimizes the attack of the metal surface by the cleaning agent.
  • the chemistry may contain an oxygen scavenger that is catalyzed by the presence of copper, to further minimize the possibility of corrosion.
  • wetting agents can be added to modify the wetting characteristics and prevent watermark formation.
  • Preferred embodiments of cleaning solution comprise a cleaning agent, a chelating agent, and a corrosion-inhibiting compound.
  • the cleaning agents of the current invention efficiently clean the surface of the semiconductor work-piece by removing CMP slurry particles from the semiconductor work-piece as well as cleaning residual metal from the dielectric surfaces.
  • Preferred embodiments of cleaning solution include ammonium hydroxide, and/or a tetra alkyl ammonium hydroxide as cleaning agents.
  • Preferred embodiments of the cleaning solutions of the current invention include chelating agents to effectively complex the metal removed and prevent re-deposition of the removed metal on the surface of the semiconductor work-piece.
  • Preferred chelating agents include one or more of ammonium citrate, ammonium oxalate, aspartic acid, benzoic acid, citric acid, cysteine, ethylene diamine, glycine, gluconic acid, glutamic acid, histidine, hydroxylamine, isopropanolamine, isopropylhydroxylamine, maleic acid, oxalic acid, salicylic acid, or tartaric acid.
  • Preferred embodiments of cleaning solutions include corrosion- inhibiting compounds to protect the metal of the semiconductor work-piece from corrosion.
  • Corrosion-inhibiting agents may be reducing agents, film- forming agents, and/or oxygen scavenging agents. Forming a film on the metal of the semiconductor work-piece that protects metal surfaces from oxidation, and from chemical, galvanic and photo-induced attack during and after the cleaning step. By protecting the metal surface from attack, reducing the surface, or by scavenging oxygen, the metal retains its desired thickness and electrical carrying capacity.
  • Preferred corrosion inhibitors include one or more of acetamidophenol, aminophenol, benzotriazole, caffeic acid, cinnamic acid, cysteine, dihydroxybenzoic acid, glucose, imidazole, mercaptothiazoline, mercaptoethanol, mercaptopropionic acid, mercaptobenzothiazole, mercaptomethylimidazole, methoxyphenol, tannic acid, thioglycerol, thiosalicylic acid, triazole, vanillin, or vanillic acid.
  • the cleaning solution of the current invention is alkaline. Alkaline post CMP cleaning chemistry is desirable because some CMP processes use alkaline slurries.
  • Preferred cleaning solutions of the current invention clean the semiconductor work-piece and protect the metal surface against corrosion in the same step. Because the cleaning and corrosion inhibiting is accomplished in a single step, there is less likelihood of accidental contamination by handling a completely separate corrosion-inhibiting solution. Furthermore, valuable processing time is saved by not having to add an additional inhibiting step.
  • Some preferred cleaning solution embodiments include a surface- active agent, also referred to as a surface-wetting agent. The surface- active agent helps prevent spotting (watermarks) on the surface that can be a source of contamination or hide defects in the semiconductor work-piece.
  • a surface-active agent may be a non-ionic, anionic, cationic, zwitterionic or amphoteric surfactant.
  • Figure 1 is an image of a Cu pad on a patterned wafer exposed to a preferred embodiment of the invention.
  • Figure 2 is an image of Cu and low k lines on a patterned wafer exposed to a preferred embodiment of the invention.
  • the present invention is a cleaning solution for cleaning a semiconductor work-piece that is alkaline in nature.
  • the composition of the cleaning solution comprises a cleaning agent, a chelating agent and a corrosion-inhibiting compound.
  • Preferred cleaning agents include ammonium hydroxide and a tetra alkyl ammonium hydroxide (methyl, ethyl, propyl, butyl, etc.).
  • Preferred chelating agents include ammonium citrate, ammonium oxalate, aspartic acid, benzoic acid, citric acid, cysteine, ethylene diamine, glycine, gluconic acid, glutamic acid, histidine, hydroxylamine, isopropanolamine, isopropylhydroxylamine, maleic acid, oxalic acid, salicylic acid, tartaric acid, and mixtures thereof.
  • Preferred corrosion-inhibiting compounds include acetamidophenol, aminophenol, benzotriazole, caffeic acid, cinnamic acid, cysteine, dihydroxybenzoic acid, glucose, imidazole, mercaptothiazoline, mercaptoethanol, mercaptopropionic acid, mercaptobenzothiazole, mercaptomethylimidazole, methoxyphenol, tannic acid, thioglycerol, thiosalicylic acid, triazole, vanillin, vanillic acid, and mixtures thereof.
  • Preferred cleaning solutions may contain mixtures of more than one corrosion-inhibiting agent. Some preferred embodiments contain mixtures of more than one chelating agent and/or corrosion-inhibiting compound.
  • the corrosion-inhibiting agent of one preferred cleaning solution comprises a mixture of acetamidophenol and methoxyphenol.
  • the corrosion-inhibiting agent of another preferred cleaning solution comprises a mixture of acetamidophenol and vanillin.
  • the corrosion-inhibiting agent of still another preferred cleaning solution comprises methoxyphenol and vanillin.
  • One preferred cleaning solution embodiment comprises tetramethylammonium hydroxide, ethylene diamine, and a mixture of acetamidophenol and vanillin.
  • One preferred mixture of this embodiment comprises concentrations of 2.75 wt.% tetramethylammonium hydroxide, 6 wt.% ethylene diamine, 0.75 wt.% acetamidophenol and 1 wt.% vanillin.
  • a 15X to 25X dilution with de-ionized (Dl) water should be made prior to use.
  • Another preferred cleaning solution comprises tetramethylammonium hydroxide (2.75 wt.%), ethylene diamine (8 wt.%), and a mixture of acetamidophenol (0.5 wt.%) and methoxyphenol (1.5 wt.%).
  • Still another preferred cleaning solution comprises tetramethylammonium hydroxide (2.75 wt.%), ethylene diamine (8 wt.%), and a mixture of methoxyphenol (1.5 wt.%) and vanillin (0.5 wt.%).
  • Preferred cleaning solution embodiments of the current invention have a neutral to alkaline pH.
  • the cleaning solution may be supplied in concentrated form, or diluted with water or other suitable diluents known to one skilled in the art.
  • One preferred cleaning solution embodiment includes a surface- active agent to promote even wetting of the semiconductor surface.
  • Preferred embodiments include, but are not limited to, non-ionic, anionic, cationic, zwitterionic or amphoteric surfactants or mixtures thereof.
  • One skilled in the art can produce the cleaning solutions of the current invention using conventional chemical mixing techniques without undue experimentation. Examples The present invention is illustrated in more detail with reference to the following Examples; which are for illustrative purposes and should not be construed as limiting the scope of the present invention.
  • Example 1 Chemicals of the present invention were tested by electrochemical impedance sprectroscopy (EIS) to determine their corrosion resistance compared to commercially available alkaline post-CMP cleaners. Blanket copper wafers were immersed in dilutions of the chemistries and connected to an electrochemical cell. The open circuit potential was measured as a function of time to determine the steady state conditions for wafers exposed to each chemistry. Once the steady state condition was found, AC voltages were applied to each wafer and resistance and capacitance values were obtained which give information on the corrosion rates and resistances of each chemical. Corrosion resistance of a preferred embodiment of the current invention were measured as 25,843 Ohms-cm2.
  • Corrosion resistance of a commercially available product were measured at 19,226 Ohms-cm2. These results clearly demonstrate that the present invention provides a higher copper corrosion resistance when compared to a commercially available alkaline post-CMP clean. A higher corrosion resistance is important to minimize copper loss from the interconnect lines as well as to prevent the formation of lower conductivity species, such as oxides and hydroxides, on the surface of the copper lines.
  • Example 2 In a second study, patterned Cu/low k and blanket copper wafers were exposed to chemicals of the present invention as well as commercially available alternatives, in order to determine the aggressiveness of each chemical in attacking the copper lines. For an efficient clean, the chemistry should be effective at complexing copper in solution to facilitate removal from the dielectric regions, but should be balanced with corrosion inhibition to prevent excess removal of material from the copper lines. To study this behavior, patterned copper wafer pieces were exposed to dilutions of alkaline chemistries for 5 minutes and then analyzed by Atomic Force Microscopy (AFM). Copper regions on the wafer can then be scanned to determine the extent of roughening caused by the chemistry.
  • AFM Atomic Force Microscopy
  • Figure 1 shows a 20 x 20 micron AFM scan of a copper pad on a patterned wafer exposed to a 1 :20 dilution of a preferred embodiment of the present invention (Tetramethyl ammonium hydroxide + ethylene diamine + acetamidophenol + vanillin).
  • the RMS roughness of this region following chemical exposure is 1.6 nm compared to an initial value of 1.0 nm, demonstrating that the chemistry slightly roughens the surface and highlights the copper grains, but does not substantially attack the copper.
  • Figure 2 is an example of a region of alternating copper (light regions) and low k (dark regions) lines on a wafer cleaned with a preferred embodiment of the present invention (Tetramethyl ammonium hydroxide + ethylene diamine + acetamidophenol + vanillin).
  • the copper lines of Figure 2 are not substantially recessed by the cleaning solution.
  • the chemistry is capable of preserving the integrity of the copper lines during the cleaning process, removing particulate, organic and dissolved copper residues without attacking the copper to result in detrimental line recess.
  • the composition may be practiced in a process other than post-CMP cleaning.
  • the cleaning of semiconductor work-pieces can be accomplished at a variety of concentrations of cleaning solution, temperature and conditions.
  • the invention may be used to clean a variety of surfaces, including but not limited to surfaces containing copper, silicon, and dielectric films. Therefore, the spirit and scope of the appended claims should not be limited to the description of one preferred versions contained herein. The intention of the applicants is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/IB2005/000081 2004-02-12 2005-01-12 Improved alkaline chemistry for post-cmp cleaning Ceased WO2005085408A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020067013345A KR101087916B1 (ko) 2004-02-12 2005-01-12 후-ｃｍｐ 세정용의 개선된 알칼리성 화학제품
EP05702248A EP1720965B1 (en) 2004-02-12 2005-01-12 Improved alkaline chemistry for post-cmp cleaning
CNA2005800019365A CN1906287A (zh) 2004-02-12 2005-01-12 改进的用于cmp后清洗的碱性化学处理法
JP2006552706A JP4550838B2 (ja) 2004-02-12 2005-01-12 化学機械平坦化の後洗浄用の改良されたアルカリ化学製品
AT05702248T ATE432974T1 (de) 2004-02-12 2005-01-12 Verbessertes säuberungsalkali für die post-cmp reinigung
DE602005014746T DE602005014746D1 (de) 2004-02-12 2005-01-12 Verbessertes säuberungsalkali für die post-cmp reinigung

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54427204P 2004-02-12 2004-02-12
US60/544,272 2004-02-12
US10/956,273 2004-10-01
US10/956,273 US7435712B2 (en) 2004-02-12 2004-10-01 Alkaline chemistry for post-CMP cleaning

Publications (1)

Publication Number Publication Date
WO2005085408A1 true WO2005085408A1 (en) 2005-09-15

Family

ID=34841165

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/000081 Ceased WO2005085408A1 (en) 2004-02-12 2005-01-12 Improved alkaline chemistry for post-cmp cleaning

Country Status (8)

Country Link
US (1) US7435712B2 (enExample)
EP (1) EP1720965B1 (enExample)
JP (1) JP4550838B2 (enExample)
KR (1) KR101087916B1 (enExample)
CN (1) CN1906287A (enExample)
AT (1) ATE432974T1 (enExample)
DE (1) DE602005014746D1 (enExample)
WO (1) WO2005085408A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007107001A (ja) * 2005-10-13 2007-04-26 Air Products & Chemicals Inc 水系洗浄組成物及びその使用方法
WO2011000758A1 (en) * 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
CN101463295B (zh) * 2008-11-28 2011-08-17 江苏海迅实业集团股份有限公司 半导体工业用清洗剂
WO2012009940A1 (zh) * 2010-07-21 2012-01-26 河北工业大学 极大规模集成电路钨插塞cmp后表面洁净方法
US9862914B2 (en) 2013-11-08 2018-01-09 Wako Pure Chemical Industries, Ltd. Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
EP2988321B1 (en) * 2013-04-19 2019-03-20 Kanto Kagaku Kabushiki Kaisha Cleaning liquid composition

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
CA2575885A1 (en) * 2004-08-03 2006-02-16 Chemetall Gmbh Method for protecting a metal surface by means of a corrosion-inhibiting coating
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI393178B (zh) * 2005-01-27 2013-04-11 Advanced Tech Materials 半導體基板處理用之組成物
US20090288688A1 (en) * 2005-03-11 2009-11-26 Ron Rulkens Non-corrosive chemical rinse system
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
US7951717B2 (en) * 2007-03-06 2011-05-31 Kabushiki Kaisha Toshiba Post-CMP treating liquid and manufacturing method of semiconductor device using the same
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
US7709400B2 (en) * 2007-05-08 2010-05-04 Lam Research Corporation Thermal methods for cleaning post-CMP wafers
US20080286471A1 (en) * 2007-05-18 2008-11-20 Doubleday Marc D Protective gel for an electrical connection
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US20100062164A1 (en) 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
KR101132303B1 (ko) * 2009-02-16 2012-04-05 주식회사 하이닉스반도체 반도체 소자의 구리배선 형성방법
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
CN103003405B (zh) 2010-07-19 2016-04-13 巴斯夫欧洲公司 含水碱性清洁组合物及其应用方法
CN101908503A (zh) * 2010-07-21 2010-12-08 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
US20130261040A1 (en) * 2010-11-29 2013-10-03 Wako Pure Chemical Industries, Ltd. Substrate cleaner for copper wiring, and method for cleaning copper wiring semiconductor substrate
CN102623327B (zh) * 2011-01-31 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
JP5817310B2 (ja) * 2011-08-08 2015-11-18 三菱化学株式会社 半導体デバイス用基板の洗浄液及び洗浄方法
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
JP2014154625A (ja) * 2013-02-06 2014-08-25 Mitsubishi Chemicals Corp 半導体デバイス用基板の洗浄液及び洗浄方法
US20160060584A1 (en) 2013-04-10 2016-03-03 Wako Pure Chemical Industries, Ltd. Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate
KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
DE102014105823A1 (de) * 2014-04-25 2015-10-29 Harting Kgaa Nachreinigungsverfahren von metallischen Kontaktelementen
TWI636131B (zh) 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
KR102326028B1 (ko) 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
CN106854461A (zh) * 2016-12-11 2017-06-16 周益铭 一种高渗透快速注水井除垢剂的制备方法
CN108998267A (zh) * 2018-08-29 2018-12-14 李少伟 一种半导体器件防蚀剂清洗剂及制备方法
US20220041931A1 (en) * 2018-12-18 2022-02-10 Tokuyama Corporation Silicon Etching Liquid
CN109988676A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 一种清洗液、其制备方法和应用
CN109988675A (zh) * 2019-04-24 2019-07-09 上海新阳半导体材料股份有限公司 长效型化学机械抛光后清洗液、其制备方法和应用
KR102397700B1 (ko) 2019-09-06 2022-05-17 엘티씨 (주) 세정제 조성물
JP7365427B2 (ja) 2019-11-22 2023-10-19 富士フイルム株式会社 洗浄液、洗浄方法
US20230174892A1 (en) 2020-05-11 2023-06-08 Daicel Corporation Detergent composition and chemical-mechanical polishing composition
CN112981404B (zh) * 2021-02-05 2022-10-28 四川和晟达电子科技有限公司 一种钛合金蚀刻液组合物及其使用方法
EP4282945A3 (en) * 2022-05-27 2024-03-13 Samsung Electronics Co., Ltd. Cleaning composition, method of cleaning metal-containing film and method of manufacturing semiconductor device
CN117946812A (zh) * 2022-10-18 2024-04-30 安集微电子科技（上海）股份有限公司 一种清洗组合物
CN118440680B (zh) * 2024-04-30 2024-10-22 寿光新海能源技术有限公司 一种耐高温酸化用缓蚀剂及其制备方法
CN119144964B (zh) * 2024-11-14 2025-04-08 大连奥首科技有限公司 一种半导体芯片cmp后清洗液、其制备方法与应用

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191086B1 (en) * 1996-09-06 2001-02-20 Arch Specialty Chemicals, Inc. Cleaning composition and method for removing residues
EP1128221A2 (en) * 2000-02-25 2001-08-29 Shipley Company LLC Plasma Etching residue removal
WO2001095381A2 (en) * 2000-06-06 2001-12-13 Esc, Inc. Post chemical-mechanical planarization (cmp) cleaning composition
US20020094939A1 (en) * 2001-01-17 2002-07-18 International Business Machines Corporation Aqueous cleaning of polymer apply equipment
US6465403B1 (en) * 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
EP1266956A1 (en) * 2001-06-13 2002-12-18 JSR Corporation Composition for washing a polishing pad and method for washing a polishing pad
WO2003006598A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2041114A1 (en) * 1990-05-17 1991-11-18 Donnie R. Juen Low leaching uv curable sealant and encapsulant with post cure mechanism
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
JPH09151151A (ja) * 1995-12-01 1997-06-10 Idemitsu Petrochem Co Ltd ４−メトキシフェノールの製造方法
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP4565741B2 (ja) * 1998-05-18 2010-10-20 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス基板洗浄用珪酸塩含有アルカリ組成物
TW500831B (en) 1999-01-20 2002-09-01 Sumitomo Chemical Co Metal-corrosion inhibitor and cleaning liquid
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6673757B1 (en) 2000-03-22 2004-01-06 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
JP4256994B2 (ja) * 1999-10-05 2009-04-22 日本エレクトロプレイテイング・エンジニヤース株式会社 回路基板の実装方法及び金めっき液並びに金めっき方法
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
JP3869608B2 (ja) * 2000-01-25 2007-01-17 Ｎｅｃエレクトロニクス株式会社 防食剤
US7375066B2 (en) * 2000-03-21 2008-05-20 Wako Pure Chemical Industries, Ltd. Semiconductor wafer cleaning agent and cleaning method
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP2002053971A (ja) * 2000-08-03 2002-02-19 Sony Corp めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置
US6498131B1 (en) 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
JP2002110679A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
JP3797541B2 (ja) 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
US20030052308A1 (en) * 2001-09-19 2003-03-20 Shao-Chung Hu Slurry composition of chemical mechanical polishing
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
JP2003195075A (ja) * 2001-12-26 2003-07-09 Jsr Corp 光導波路
JP2003332426A (ja) * 2002-05-17 2003-11-21 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
US7435712B2 (en) 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US20050205835A1 (en) 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191086B1 (en) * 1996-09-06 2001-02-20 Arch Specialty Chemicals, Inc. Cleaning composition and method for removing residues
US6465403B1 (en) * 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
EP1128221A2 (en) * 2000-02-25 2001-08-29 Shipley Company LLC Plasma Etching residue removal
WO2001095381A2 (en) * 2000-06-06 2001-12-13 Esc, Inc. Post chemical-mechanical planarization (cmp) cleaning composition
US20020094939A1 (en) * 2001-01-17 2002-07-18 International Business Machines Corporation Aqueous cleaning of polymer apply equipment
EP1266956A1 (en) * 2001-06-13 2002-12-18 JSR Corporation Composition for washing a polishing pad and method for washing a polishing pad
WO2003006598A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007107001A (ja) * 2005-10-13 2007-04-26 Air Products & Chemicals Inc 水系洗浄組成物及びその使用方法
US7879782B2 (en) 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
JP2011168795A (ja) * 2005-10-13 2011-09-01 Air Products & Chemicals Inc 水系洗浄組成物及びその使用方法
CN101463295B (zh) * 2008-11-28 2011-08-17 江苏海迅实业集团股份有限公司 半导体工业用清洗剂
WO2011000758A1 (en) * 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US8969275B2 (en) 2009-06-30 2015-03-03 Basf Se Aqueous alkaline cleaning compositions and methods of their use
WO2012009940A1 (zh) * 2010-07-21 2012-01-26 河北工业大学 极大规模集成电路钨插塞cmp后表面洁净方法
EP2988321B1 (en) * 2013-04-19 2019-03-20 Kanto Kagaku Kabushiki Kaisha Cleaning liquid composition
US9862914B2 (en) 2013-11-08 2018-01-09 Wako Pure Chemical Industries, Ltd. Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Also Published As

Publication number Publication date
US7435712B2 (en) 2008-10-14
JP2007525836A (ja) 2007-09-06
EP1720965B1 (en) 2009-06-03
KR101087916B1 (ko) 2011-11-30
CN1906287A (zh) 2007-01-31
US20050181961A1 (en) 2005-08-18
EP1720965A1 (en) 2006-11-15
ATE432974T1 (de) 2009-06-15
KR20060126527A (ko) 2006-12-07
JP4550838B2 (ja) 2010-09-22
DE602005014746D1 (de) 2009-07-16

Similar Documents

Publication Publication Date Title
US7435712B2 (en) Alkaline chemistry for post-CMP cleaning
US7498295B2 (en) Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7087564B2 (en) Acidic chemistry for post-CMP cleaning
TWI297730B (en) Alkaline post-chemical mechanical planarization cleaning compositions
TWI507521B (zh) 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法
US8685909B2 (en) Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP2164938A2 (en) New antioxidants for post-cmp cleaning formulations
CN110418834A (zh) 化学机械式研磨后清洗用组合物
EP2687589A2 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020067013345

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 200580001936.5

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2006552706

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2005702248

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWP Wipo information: published in national office

Ref document number: 2005702248

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067013345

Country of ref document: KR