CN101908502B - 极大规模集成电路钨插塞cmp后表面洁净方法 - Google Patents
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Abstract
本发明涉及极大规模集成电路钨插塞表面高精密加工过程中钨插塞CMP后表面洁净方法。利用一种碱性介质的水抛液，该水抛液选用活性剂、螯合剂、阻蚀剂组成。当碱性抛光刚刚完成后，马上加入上述水抛液并采用大流量水抛的方法，可将残留的抛光液冲走，吸附易清洗物质迅速降低表面张力并阻止反应继续进行(物理吸附状态)、形成单分子钝化膜、并可使金属离子形成可溶的螯合物，从而达到洁净、完美的抛光表面。并且该水抛液具有成本低、不污染环境及腐蚀设备的优点。
Description
技术领域
本发明属抛光液的使用方法，特别是涉及极大规模集成电路钨插塞CMP后表面洁净方法。
背景技术
目前，大规模集成电路的布线层数在不断增加，每一层都要求全局平面化，化学机械抛光(Chemical-Mechanical Polishing，简称CMP)是唯一能够实现全局平面化的方法。CMP的研究工作过去主要集中在美国以SEMTECH为主的联合体，在它的推动下CMP技术最早于1994年首先在美国进入工艺线应用。随后，日本于1995年初也开始将CMP工艺引入其0.5μm工艺线的氧化膜平面化工艺，1996年开始用于钨的平面化工艺，现已发展到全球，如欧洲的联合体JESS工，法国研究公司LETI和CNET，德国的FRALDHOFER研究所，亚洲的韩国和我国台湾地区也在加速研究与开发，并呈现出高竞争势头。钨CMP的技术存在一系列的复杂化学和机械的作用，有许多影响参数如压力与温度，pH值等，涉及到金属物理，固体物理，材料学和微电子技术等多种学科，还存在着许多亟待待解决的理论问题。
金属钨在高电流密度下，抗电子迁移好，不形成小丘，应力低，而且能够与硅形成很好的欧姆接触，所以可作为接触窗及介层洞的填充金属及扩散阻挡层。对于最小特征尺寸在0.35μm及以下的多层布线的每一层都必须进行全局平面化。化学机械抛光CMP是目前最好的也是唯一能实现全局平面化的技术。多层布线工艺中必须对介层洞外残留的钨进行CMP，达到全局平面化才能继续在上面布线，否则会导致导线断裂，造成严重的后果。所以材料表面的高度平坦化是实现多层布线的基础和关键技术之一。
极大规模集成电路表面高精密加工过程中化学机械抛光(CMP)的抛光液使用方法尤其重要。目前钨插塞抛光生产后，其表面能量高、表面张力大、残留抛光液分布不均、沾污金属离子等现象，从而造成后续加工中成本的提高及器件成品率的降低。
发明内容
本发明是为了解决极大规模集成电路多层布线钨插塞CMP后表面存在金属离子污染、抛光液难清洗问题，而公开一种简便易行、无污染的极大规模集成电路钨插塞CMP后表面洁净方法。
本发明极大规模集成电路钨插塞CMP后表面洁净方法步骤如下：
(1)水抛液的制备：取一定量的去离子水，加入活性剂、螯合剂、阻蚀(氧)剂，活性剂的加入量为15-30g/L，螯合剂的加入量为5-20g/L，阻蚀剂的加入量为1-60g/L；
(2)碱性CMP后立即使用上述水溶液采用1000g/min-4000g/min的流量进行水抛清洁，水抛时间为30s-3min。
所述的活性剂为天津晶岭微电子材料有限公司市售FA/O表面活性剂、Oπ-7((C10H21-C6H4-O-CH2CH2O)7-H)、Oπ-10((C10H21-C6H4-O-CH2CH2O)10-H)、O-20(C12-18H25-37-C6H4-O-CH2CH2O)70-H)、聚氧乙烯仲烷基醇醚(JFC)的一种。
所述的螯合剂为乙二胺四乙酸四(四羟乙基乙二胺)。结构式如下：
所述的阻蚀(氧)剂为是六次甲基四胺或苯丙三氮唑，其中六次甲基四胺C6H12N4，结构式：
苯丙三氮唑C6H5N3，结构式：
本发明中采用技术的作用为：
钨插塞碱性抛光后表面存在能量高、表面张力大、残留抛光液分布不均、沾污金属离子等问题。当碱性抛光刚刚完成后，马上向水抛液中加入表面活性剂、螯合剂、阻蚀剂等，并采用大流量水抛的方法，可将残留的抛光液冲走防止局部继续反应，同时可通过物理吸附易清洗物迅速降低表面张力、形成单分子钝化膜防止局部腐蚀、并可使金属离子形成可溶的螯合物，从而达到洁净、完美的抛光表面。
本发明的有益效果和优点：
1.CMP后选用含表面活性剂、螯合剂、复合阻蚀剂等的水溶液，进行大流量水抛钨插塞表面，对设备无腐蚀，并可将残留于晶片表面分布不均的抛光液迅速冲走，可获得洁净、完美的抛光表面。
2.选用表面活性剂可使抛光后表面高的表面张力迅速降低，减少损伤层，提高表面质量的均匀性；
3.选用的螯合剂可与表面残留的金属离子发生反应，生成可溶性的大分子螯合物，在大流量水溶液作用下脱离钨插塞表面。
4.选用的阻蚀剂可在抛光后表面形成单分子钝化膜，阻止表面不均匀分布的抛光液继续与基体反应而形成不均匀腐蚀，提高抛光后表面的完美性。表面光洁无蚀图，粗糙度降至纳米级。
5.综合实施效果举例如下表所示：
| 抛后处理方法 | 效果 | 抛后处理方法 | 效果 |
| 抛光后无水抛 | 表面出现蚀图，粗糙度23nm | 使用本发明方法 | 表面无蚀图，粗糙度可达9nm。 |
| 抛光后无活性剂、螯合剂、阻蚀剂水抛 | 表面出现蚀图，粗糙度14nm | 使用本发明方法 | 表面无蚀图，粗糙度可达6.43nm。 |
具体实施方式
下面以实施例进一步说明本发明。
实施例1：配制4000g钨插塞水溶性抛光液
取去离子水3645g，边搅拌边放入FA/O表面活性剂100g，FA/O螯合剂50g，然后称5g六次甲基四胺用200g去离子水稀释后边搅拌边倒入上述液体。搅拌均匀后得4000g钨插塞水抛液，采用1000g/min的流量进行水抛后，表面光洁无蚀图，粗糙度为7.8nm。
实施例2：配制4000g钨插塞水溶性抛光液
取去离子水3400g，边搅拌边放入Oπ-7表面活性剂100g，FA/O螯合剂50g，然后称250g苯丙三氮唑用200g去离子水稀释后边搅拌边倒入上述液体。搅拌均匀后得4000g钨插塞水溶性抛光液，采用4000g/min的流量进行水抛后，表面光洁无蚀图，粗糙度为6.4nm。
Claims (4)
1.一种极大规模集成电路钨插塞CMP后表面洁净方法，其特征在于，按照以下步骤进行：
(1)水抛液的制备：取一定量的去离子水，边搅拌边加入活性剂、螯合剂、阻蚀剂，活性剂的加入量为15-30g/L，螯合剂的加入量为5-20g/L，阻蚀剂的加入量为1-60g/L；
(2)碱性CMP后立即使用上述水抛液采用1000g/min-4000g/min的流量进行水抛清洁，水抛时间为30s-3min。
2.根据权利要求1所述的极大规模集成电路钨插塞CMP后表面洁净方法，其特征在于：所述步骤(1)的活性剂为天津晶岭微电子材料有限公司销售的FA/O表面活性剂、Oπ-7((C10H21-C6H4-O-CH2CH2O)7-H)、Oπ-10((C10H21-C6H4-O-CH2CH2O)10-H)、O-20(C12-18H25- 37-C6H4-O-CH2CH2O)70-H)、JFC的一种。
3.根据权利要求1所述的极大规模集成电路钨插塞CMP后表面洁净方法，其特征在于：所述步骤(1)螯合剂为乙二胺四乙酸四(四羟乙基乙二胺)。
4.根据权利要求1所述的极大规模集成电路钨插塞CMP后表面洁净方法，其特征在于：所述步骤(1)的阻蚀剂为是六次甲基四胺或苯丙三氮唑。
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| PCT/CN2010/080472 WO2012009940A1 (zh) | 2010-07-21 | 2010-12-30 | 极大规模集成电路钨插塞cmp后表面洁净方法 |
| US13/737,975 US20130133691A1 (en) | 2010-07-21 | 2013-01-10 | Method of cleaning tungsten plug surfaces in ultra large scale integrated circuits after chemical-mechanical polishing |
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| CN101908502B (zh) * | 2010-07-21 | 2012-07-04 | 河北工业大学 | 极大规模集成电路钨插塞cmp后表面洁净方法 |
| CN104526539B (zh) * | 2014-12-16 | 2017-07-28 | 河北工业大学 | 陀螺光学元件石英衬底材料cmp抛光表面粗糙度的控制方法 |
| CN107546110B (zh) * | 2017-09-11 | 2019-07-12 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | 一种钨化学机械平坦化的后清洗方法及晶圆 |
| KR20190133543A (ko) * | 2018-05-23 | 2019-12-03 | 엘지이노텍 주식회사 | 액체 렌즈 및 이를 포함하는 카메라 모듈 및 광학기기 |
| CN110813891B (zh) * | 2019-11-15 | 2022-02-18 | 河北工业大学 | 用于铜cmp后清洗磨料颗粒的清洗液及清洗方法 |
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| CN1858131A (zh) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | 用于铌酸锂光学晶片研磨抛光的抛光液 |
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| US6395693B1 (en) * | 1999-09-27 | 2002-05-28 | Cabot Microelectronics Corporation | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
| CN1121060C (zh) * | 2002-05-10 | 2003-09-10 | 河北工业大学 | 集成电路硅衬底抛光片表面吸附粒子吸附状态的控制方法 |
| US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
| CN1967788A (zh) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | 钨cmp后的清洗方法 |
| CN100400722C (zh) * | 2006-06-06 | 2008-07-09 | 河北工业大学 | 消除半导体硅晶片表面应力的方法 |
| CN1944613A (zh) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | 一种用于集成电路衬底硅片的清洗剂及其清洗方法 |
| CN101908502B (zh) * | 2010-07-21 | 2012-07-04 | 河北工业大学 | 极大规模集成电路钨插塞cmp后表面洁净方法 |
-
2010
- 2010-07-21 CN CN201010231680.XA patent/CN101908502B/zh not_active Expired - Fee Related
- 2010-12-30 WO PCT/CN2010/080472 patent/WO2012009940A1/zh active Application Filing
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2013
- 2013-01-10 US US13/737,975 patent/US20130133691A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858131A (zh) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | 用于铌酸锂光学晶片研磨抛光的抛光液 |
Non-Patent Citations (1)
| Title |
|---|
| 张西慧，等.硅衬底清洗液中FA/O螯合剂的应用研究.《电子器件》.2006,第29卷(第3期), * |
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| WO2012009940A1 (zh) | 2012-01-26 |
| CN101908502A (zh) | 2010-12-08 |
| US20130133691A1 (en) | 2013-05-30 |
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