JP2007518276A5 - - Google Patents
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- Publication number
- JP2007518276A5 JP2007518276A5 JP2006549381A JP2006549381A JP2007518276A5 JP 2007518276 A5 JP2007518276 A5 JP 2007518276A5 JP 2006549381 A JP2006549381 A JP 2006549381A JP 2006549381 A JP2006549381 A JP 2006549381A JP 2007518276 A5 JP2007518276 A5 JP 2007518276A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- semiconductor wafer
- integrated circuit
- channel
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003989 dielectric material Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 229910004205 SiNX Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229920000412 polyarylene Polymers 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/707,713 | 2004-01-06 | ||
| US10/707,713 US7098544B2 (en) | 2004-01-06 | 2004-01-06 | Edge seal for integrated circuit chips |
| PCT/US2005/000289 WO2005067598A2 (en) | 2004-01-06 | 2005-01-06 | Compliant passivated edge seal for low-k interconnect structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007518276A JP2007518276A (ja) | 2007-07-05 |
| JP2007518276A5 true JP2007518276A5 (enExample) | 2007-11-22 |
| JP5147242B2 JP5147242B2 (ja) | 2013-02-20 |
Family
ID=34710368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549381A Expired - Fee Related JP5147242B2 (ja) | 2004-01-06 | 2005-01-06 | 低k相互配線構造物用のしなやかな不動態化エッジシール |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7098544B2 (enExample) |
| EP (1) | EP1721334A4 (enExample) |
| JP (1) | JP5147242B2 (enExample) |
| KR (1) | KR100962906B1 (enExample) |
| CN (1) | CN100552928C (enExample) |
| TW (1) | TWI339901B (enExample) |
| WO (1) | WO2005067598A2 (enExample) |
Families Citing this family (48)
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| US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
| US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
| US7582969B2 (en) * | 2005-08-26 | 2009-09-01 | Innovative Micro Technology | Hermetic interconnect structure and method of manufacture |
| US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7622377B2 (en) | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
| US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
| US7531442B2 (en) * | 2005-11-30 | 2009-05-12 | Lsi Corporation | Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing |
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| US7679195B2 (en) * | 2006-06-20 | 2010-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | PAD structure and method of testing |
| US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
| US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
| TWI322495B (en) * | 2006-12-20 | 2010-03-21 | Phoenix Prec Technology Corp | Carrier structure embedded with a chip and method for manufacturing the same |
| US7535689B2 (en) * | 2007-06-21 | 2009-05-19 | Intel Corporation | Reducing input capacitance of high speed integrated circuits |
| US7884457B2 (en) * | 2007-06-26 | 2011-02-08 | Stats Chippac Ltd. | Integrated circuit package system with dual side connection |
| DE102007035902A1 (de) * | 2007-07-31 | 2009-02-05 | Siemens Ag | Verfahren zum Herstellen eines elektronischen Bausteins und elektronischer Baustein |
| SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
| US8680653B2 (en) * | 2007-11-12 | 2014-03-25 | Infineon Technologies Ag | Wafer and a method of dicing a wafer |
| US7884015B2 (en) * | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
| US7566637B2 (en) | 2007-12-13 | 2009-07-28 | International Business Machines Corporation | Method of inhibition of metal diffusion arising from laser dicing |
| US7439170B1 (en) | 2008-03-07 | 2008-10-21 | International Business Machines Corporation | Design structure for final via designs for chip stress reduction |
| US7951647B2 (en) * | 2008-06-17 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Performing die-to-wafer stacking by filling gaps between dies |
| JP2010263145A (ja) * | 2009-05-11 | 2010-11-18 | Panasonic Corp | 半導体装置及びその製造方法 |
| US8859390B2 (en) * | 2010-02-05 | 2014-10-14 | International Business Machines Corporation | Structure and method for making crack stop for 3D integrated circuits |
| US8497203B2 (en) | 2010-08-13 | 2013-07-30 | International Business Machines Corporation | Semiconductor structures and methods of manufacture |
| US9748154B1 (en) | 2010-11-04 | 2017-08-29 | Amkor Technology, Inc. | Wafer level fan out semiconductor device and manufacturing method thereof |
| US8962439B2 (en) | 2011-04-11 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell |
| US8653623B2 (en) | 2011-04-11 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | One-time programmable devices and methods of forming the same |
| US8829676B2 (en) * | 2011-06-28 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for wafer level package |
| US20130075892A1 (en) * | 2011-09-27 | 2013-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Three Dimensional Integrated Circuit Fabrication |
| KR101906408B1 (ko) * | 2011-10-04 | 2018-10-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| JP2014120657A (ja) * | 2012-12-18 | 2014-06-30 | Toshiba Corp | 半導体装置 |
| US9059333B1 (en) | 2013-12-04 | 2015-06-16 | International Business Machines Corporation | Facilitating chip dicing for metal-metal bonding and hybrid wafer bonding |
| US9589911B1 (en) | 2015-08-27 | 2017-03-07 | Globalfoundries Inc. | Integrated circuit structure with metal crack stop and methods of forming same |
| US9589912B1 (en) | 2015-08-27 | 2017-03-07 | Globalfoundries Inc. | Integrated circuit structure with crack stop and method of forming same |
| US9553061B1 (en) * | 2015-11-19 | 2017-01-24 | Globalfoundries Inc. | Wiring bond pad structures |
| WO2017154167A1 (ja) * | 2016-03-10 | 2017-09-14 | 三井金属鉱業株式会社 | 多層積層板及びこれを用いた多層プリント配線板の製造方法 |
| US20180005916A1 (en) * | 2016-06-30 | 2018-01-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| WO2018190868A1 (en) * | 2017-04-14 | 2018-10-18 | Hewlett-Packard Development Company, L.P. | Substrate(s) enclosed by energy absorbing material(s) |
| US10892233B2 (en) | 2018-10-31 | 2021-01-12 | International Business Machines Corporation | Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1230421A (enExample) * | 1967-09-15 | 1971-05-05 | ||
| US3852876A (en) * | 1973-01-02 | 1974-12-10 | Gen Electric | High voltage power transistor and method for making |
| US4017340A (en) * | 1975-08-04 | 1977-04-12 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
| US4331970A (en) * | 1978-09-18 | 1982-05-25 | General Electric Company | Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation |
| JPS5972745A (ja) * | 1982-10-19 | 1984-04-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS5972742A (ja) | 1982-10-20 | 1984-04-24 | Hitachi Ltd | マスタスライスlsiのマスタ方法 |
| JPS61187346A (ja) * | 1985-02-15 | 1986-08-21 | Hitachi Ltd | 絶縁膜構造および半導体装置 |
| US5476211A (en) | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
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| US6709898B1 (en) * | 2000-10-04 | 2004-03-23 | Intel Corporation | Die-in-heat spreader microelectronic package |
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| US20030022330A1 (en) | 2001-04-19 | 2003-01-30 | Myriad Genetics, Incorporated | APOA2-interacting proteins and use thereof |
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| JP2002270721A (ja) * | 2001-03-12 | 2002-09-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2003188406A (ja) * | 2001-12-20 | 2003-07-04 | Sumitomo Electric Ind Ltd | 受光素子、これを用いた光受信器および製造方法 |
| US6650010B2 (en) * | 2002-02-15 | 2003-11-18 | International Business Machines Corporation | Unique feature design enabling structural integrity for advanced low K semiconductor chips |
| US20040063237A1 (en) * | 2002-09-27 | 2004-04-01 | Chang-Han Yun | Fabricating complex micro-electromechanical systems using a dummy handling substrate |
| US20040088855A1 (en) * | 2002-11-11 | 2004-05-13 | Salman Akram | Interposers for chip-scale packages, chip-scale packages including the interposers, test apparatus for effecting wafer-level testing of the chip-scale packages, and methods |
| US20040102022A1 (en) * | 2002-11-22 | 2004-05-27 | Tongbi Jiang | Methods of fabricating integrated circuitry |
| KR100528326B1 (ko) * | 2002-12-31 | 2005-11-15 | 삼성전자주식회사 | 가요성 기판 상에 보호캡을 구비하는 박막 반도체 소자 및 이를 이용하는 전자장치 및 그 제조방법 |
-
2004
- 2004-01-06 US US10/707,713 patent/US7098544B2/en not_active Expired - Fee Related
-
2005
- 2005-01-03 TW TW094100047A patent/TWI339901B/zh not_active IP Right Cessation
- 2005-01-06 EP EP05711281A patent/EP1721334A4/en not_active Withdrawn
- 2005-01-06 JP JP2006549381A patent/JP5147242B2/ja not_active Expired - Fee Related
- 2005-01-06 KR KR1020067013489A patent/KR100962906B1/ko not_active Expired - Fee Related
- 2005-01-06 CN CNB2005800019628A patent/CN100552928C/zh not_active Expired - Lifetime
- 2005-01-06 WO PCT/US2005/000289 patent/WO2005067598A2/en not_active Ceased
-
2006
- 2006-08-16 US US11/464,959 patent/US7273770B2/en not_active Expired - Lifetime
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