JP2009302222A5 - - Google Patents

Download PDF

Info

Publication number
JP2009302222A5
JP2009302222A5 JP2008153851A JP2008153851A JP2009302222A5 JP 2009302222 A5 JP2009302222 A5 JP 2009302222A5 JP 2008153851 A JP2008153851 A JP 2008153851A JP 2008153851 A JP2008153851 A JP 2008153851A JP 2009302222 A5 JP2009302222 A5 JP 2009302222A5
Authority
JP
Japan
Prior art keywords
mesa
insulating film
semiconductor layer
semiconductor device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008153851A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009302222A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008153851A priority Critical patent/JP2009302222A/ja
Priority claimed from JP2008153851A external-priority patent/JP2009302222A/ja
Priority to TW098119329A priority patent/TWI415192B/zh
Priority to KR1020090051851A priority patent/KR101075709B1/ko
Priority to US12/482,674 priority patent/US8227901B2/en
Priority to CN2009101406685A priority patent/CN101604632B/zh
Publication of JP2009302222A publication Critical patent/JP2009302222A/ja
Publication of JP2009302222A5 publication Critical patent/JP2009302222A5/ja
Pending legal-status Critical Current

Links

JP2008153851A 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法 Pending JP2009302222A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008153851A JP2009302222A (ja) 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法
TW098119329A TWI415192B (zh) 2008-06-12 2009-06-10 台型半導體裝置及其製造方法
KR1020090051851A KR101075709B1 (ko) 2008-06-12 2009-06-11 메사형 반도체 장치 및 그 제조 방법
US12/482,674 US8227901B2 (en) 2008-06-12 2009-06-11 Mesa type semiconductor device and manufacturing method thereof
CN2009101406685A CN101604632B (zh) 2008-06-12 2009-06-12 台型半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008153851A JP2009302222A (ja) 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009302222A JP2009302222A (ja) 2009-12-24
JP2009302222A5 true JP2009302222A5 (enExample) 2011-07-07

Family

ID=41413966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008153851A Pending JP2009302222A (ja) 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US8227901B2 (enExample)
JP (1) JP2009302222A (enExample)
KR (1) KR101075709B1 (enExample)
CN (1) CN101604632B (enExample)
TW (1) TWI415192B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
CN104681633B (zh) * 2015-01-08 2018-05-08 北京时代民芯科技有限公司 具备低漏电高耐压终端结构的台面二极管及其制备方法
US10479675B2 (en) * 2015-09-30 2019-11-19 Denso Corporation Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess
CN106098791A (zh) * 2016-06-16 2016-11-09 杭州赛晶电子有限公司 U型蚀刻直角台面硅二极管及其硅芯和制备方法
CN108365015A (zh) * 2017-12-29 2018-08-03 济南兰星电子有限公司 半导体二极管芯片及其制作方法
CN119673784B (zh) * 2024-11-20 2025-07-22 济南科盛电子有限公司 一种高效的gpp芯片玻璃钝化层制备工艺

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
JPS51139281A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Semi-conductor device
US4179794A (en) * 1975-07-23 1979-12-25 Nippon Gakki Seizo Kabushiki Kaisha Process of manufacturing semiconductor devices
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
JPS57196585A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of high-speed mesa type semiconductor device
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
US4663832A (en) * 1984-06-29 1987-05-12 International Business Machines Corporation Method for improving the planarity and passivation in a semiconductor isolation trench arrangement
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
JPH1075012A (ja) * 1996-06-27 1998-03-17 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JP2001110799A (ja) * 1999-10-04 2001-04-20 Sanken Electric Co Ltd 半導体素子及びその製造方法
JP4200626B2 (ja) * 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP3492279B2 (ja) * 2000-03-21 2004-02-03 Ｎｅｃエレクトロニクス株式会社 素子分離領域の形成方法
US6383933B1 (en) * 2000-03-23 2002-05-07 National Semiconductor Corporation Method of using organic material to enhance STI planarization or other planarization processes
JP2002261269A (ja) 2001-02-27 2002-09-13 Matsushita Electric Ind Co Ltd メサ型半導体装置の製造方法
JP3985582B2 (ja) * 2002-05-24 2007-10-03 松下電器産業株式会社 半導体装置の製造方法
JP2004319554A (ja) * 2003-04-11 2004-11-11 Oki Electric Ind Co Ltd 光半導体素子および光半導体素子の製造方法
JP2005051111A (ja) 2003-07-30 2005-02-24 Matsushita Electric Ind Co Ltd メサ型半導体装置
JP3767864B2 (ja) * 2004-02-16 2006-04-19 ローム株式会社 メサ型半導体装置の製法
JP2006100694A (ja) * 2004-09-30 2006-04-13 Matsushita Electric Ind Co Ltd メサ型半導体装置およびその製造方法
JP4901300B2 (ja) 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法
JP5117698B2 (ja) * 2006-09-27 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2010045406A5 (enExample)
JP5856537B2 (ja) 半導体装置
JP2009302222A5 (enExample)
JP2013004881A5 (enExample)
TW201130057A (en) Semiconductor device and manufacturing method thereof
JP2011100992A5 (enExample)
JP5648658B2 (ja) 半導体装置の製造方法
JP2007518276A5 (enExample)
JP2014215485A5 (enExample)
JP2010123937A5 (enExample)
JP6005306B2 (ja) 半導体装置
WO2009002381A3 (en) Mold compound circuit structure for enhanced electrical and thermal performance
JP2009533874A5 (enExample)
JP2009278072A5 (enExample)
TWI401807B (zh) 台型半導體裝置及其製造方法
TW200943415A (en) Semiconductor device
EP2782138A3 (en) Semiconductor device and method for manufacturing the same
TW200639919A (en) Method of fabricating a transistor having a triple channel in a memory device
JP2017139293A5 (enExample)
JP2009044154A5 (enExample)
US20140077261A1 (en) Power semiconductor device and method of manufacturing power semiconductor device
TW201417287A (zh) 半導體裝置和製造半導體裝置的方法
CN105374743A (zh) 半导体装置的制造方法
JP2010278425A5 (enExample)
CN110739347B (zh) 沟槽栅半导体器件及其制造方法