KR101075709B1 - 메사형 반도체 장치 및 그 제조 방법 - Google Patents

메사형 반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR101075709B1
KR101075709B1 KR1020090051851A KR20090051851A KR101075709B1 KR 101075709 B1 KR101075709 B1 KR 101075709B1 KR 1020090051851 A KR1020090051851 A KR 1020090051851A KR 20090051851 A KR20090051851 A KR 20090051851A KR 101075709 B1 KR101075709 B1 KR 101075709B1
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KR
South Korea
Prior art keywords
insulating film
mesa
semiconductor layer
mesa groove
film
Prior art date
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Expired - Fee Related
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KR1020090051851A
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English (en)
Korean (ko)
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KR20090129367A (ko
Inventor
가쯔유끼 세끼
아끼라 스즈끼
게이따 오다지마
기꾸오 오까다
고지로 가메야마
Original Assignee
산요덴키가부시키가이샤
산요 한도타이 세이조우 가부시키가이샤
산요 세미컨덕터 컴퍼니 리미티드
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Publication of KR20090129367A publication Critical patent/KR20090129367A/ko
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
KR1020090051851A 2008-06-12 2009-06-11 메사형 반도체 장치 및 그 제조 방법 Expired - Fee Related KR101075709B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008153851A JP2009302222A (ja) 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法
JPJP-P-2008-153851 2008-06-12

Publications (2)

Publication Number Publication Date
KR20090129367A KR20090129367A (ko) 2009-12-16
KR101075709B1 true KR101075709B1 (ko) 2011-10-21

Family

ID=41413966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090051851A Expired - Fee Related KR101075709B1 (ko) 2008-06-12 2009-06-11 메사형 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US8227901B2 (enExample)
JP (1) JP2009302222A (enExample)
KR (1) KR101075709B1 (enExample)
CN (1) CN101604632B (enExample)
TW (1) TWI415192B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
CN104681633B (zh) * 2015-01-08 2018-05-08 北京时代民芯科技有限公司 具备低漏电高耐压终端结构的台面二极管及其制备方法
US10479675B2 (en) * 2015-09-30 2019-11-19 Denso Corporation Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess
CN106098791A (zh) * 2016-06-16 2016-11-09 杭州赛晶电子有限公司 U型蚀刻直角台面硅二极管及其硅芯和制备方法
CN108365015A (zh) * 2017-12-29 2018-08-03 济南兰星电子有限公司 半导体二极管芯片及其制作方法
CN119673784B (zh) * 2024-11-20 2025-07-22 济南科盛电子有限公司 一种高效的gpp芯片玻璃钝化层制备工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261269A (ja) * 2001-02-27 2002-09-13 Matsushita Electric Ind Co Ltd メサ型半導体装置の製造方法

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US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
JPS51139281A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Semi-conductor device
US4179794A (en) * 1975-07-23 1979-12-25 Nippon Gakki Seizo Kabushiki Kaisha Process of manufacturing semiconductor devices
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
JPS57196585A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of high-speed mesa type semiconductor device
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
US4663832A (en) * 1984-06-29 1987-05-12 International Business Machines Corporation Method for improving the planarity and passivation in a semiconductor isolation trench arrangement
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
JPH1075012A (ja) * 1996-06-27 1998-03-17 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JP2001110799A (ja) * 1999-10-04 2001-04-20 Sanken Electric Co Ltd 半導体素子及びその製造方法
JP4200626B2 (ja) * 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP3492279B2 (ja) * 2000-03-21 2004-02-03 Ｎｅｃエレクトロニクス株式会社 素子分離領域の形成方法
US6383933B1 (en) * 2000-03-23 2002-05-07 National Semiconductor Corporation Method of using organic material to enhance STI planarization or other planarization processes
JP3985582B2 (ja) * 2002-05-24 2007-10-03 松下電器産業株式会社 半導体装置の製造方法
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JP4901300B2 (ja) 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法
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JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
JP2002261269A (ja) * 2001-02-27 2002-09-13 Matsushita Electric Ind Co Ltd メサ型半導体装置の製造方法

Also Published As

Publication number Publication date
TW200952085A (en) 2009-12-16
TWI415192B (zh) 2013-11-11
US20090309194A1 (en) 2009-12-17
CN101604632B (zh) 2012-03-07
JP2009302222A (ja) 2009-12-24
KR20090129367A (ko) 2009-12-16
CN101604632A (zh) 2009-12-16
US8227901B2 (en) 2012-07-24

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