JP2007512549A5 - - Google Patents

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Publication number
JP2007512549A5
JP2007512549A5 JP2006536874A JP2006536874A JP2007512549A5 JP 2007512549 A5 JP2007512549 A5 JP 2007512549A5 JP 2006536874 A JP2006536874 A JP 2006536874A JP 2006536874 A JP2006536874 A JP 2006536874A JP 2007512549 A5 JP2007512549 A5 JP 2007512549A5
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JP
Japan
Prior art keywords
fluorinated
group
moiety
resist
substrate
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Application number
JP2006536874A
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English (en)
Japanese (ja)
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JP4530368B2 (ja
JP2007512549A (ja
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Publication date
Priority claimed from US10/693,199 external-priority patent/US6939664B2/en
Application filed filed Critical
Publication of JP2007512549A publication Critical patent/JP2007512549A/ja
Publication of JP2007512549A5 publication Critical patent/JP2007512549A5/ja
Application granted granted Critical
Publication of JP4530368B2 publication Critical patent/JP4530368B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006536874A 2003-10-24 2004-10-22 活性化エネルギーの低いケイ素含有レジスト・システム Expired - Fee Related JP4530368B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/693,199 US6939664B2 (en) 2003-10-24 2003-10-24 Low-activation energy silicon-containing resist system
PCT/US2004/035253 WO2005040918A2 (en) 2003-10-24 2004-10-22 Low-activation energy silicon-containing resist system

Publications (3)

Publication Number Publication Date
JP2007512549A JP2007512549A (ja) 2007-05-17
JP2007512549A5 true JP2007512549A5 (enExample) 2007-11-22
JP4530368B2 JP4530368B2 (ja) 2010-08-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006536874A Expired - Fee Related JP4530368B2 (ja) 2003-10-24 2004-10-22 活性化エネルギーの低いケイ素含有レジスト・システム

Country Status (6)

Country Link
US (1) US6939664B2 (enExample)
EP (1) EP1678556A4 (enExample)
JP (1) JP4530368B2 (enExample)
KR (1) KR100773011B1 (enExample)
CN (1) CN100561337C (enExample)
WO (1) WO2005040918A2 (enExample)

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US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
TWI322334B (en) * 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
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US8404427B2 (en) * 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US20070269736A1 (en) * 2006-05-16 2007-11-22 International Business Machines Corporation NEW SUB 40 NM RESOLUTION Si CONTAINING RESIST SYSTEM
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
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US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
JP2010519398A (ja) 2007-02-27 2010-06-03 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション ケイ素に基づく反射防止膜用組成物
US20090104566A1 (en) * 2007-10-19 2009-04-23 International Business Machines Corporation Process of multiple exposures with spin castable film
WO2009096420A1 (ja) * 2008-01-31 2009-08-06 Showa Denko K.K. 凹凸パターン形成方法、およびそれを利用した磁気記録媒体の製造方法
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EP2199854B1 (en) * 2008-12-19 2015-12-16 Obducat AB Hybrid polymer mold for nano-imprinting and method for making the same
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
FI128886B (en) * 2019-02-25 2021-02-26 Pibond Oy Functional hydrogen silsesquioxane resins and the use thereof

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JP3900246B2 (ja) * 2001-03-13 2007-04-04 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3931951B2 (ja) * 2001-03-13 2007-06-20 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6908722B2 (en) * 2001-06-29 2005-06-21 Jsr Corporation Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition
US7244549B2 (en) * 2001-08-24 2007-07-17 Jsr Corporation Pattern forming method and bilayer film

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