JP4530368B2 - 活性化エネルギーの低いケイ素含有レジスト・システム - Google Patents
活性化エネルギーの低いケイ素含有レジスト・システム Download PDFInfo
- Publication number
- JP4530368B2 JP4530368B2 JP2006536874A JP2006536874A JP4530368B2 JP 4530368 B2 JP4530368 B2 JP 4530368B2 JP 2006536874 A JP2006536874 A JP 2006536874A JP 2006536874 A JP2006536874 A JP 2006536874A JP 4530368 B2 JP4530368 B2 JP 4530368B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- group
- fluorinated
- layer
- moiety
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004913 activation Effects 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 8
- 229910052710 silicon Inorganic materials 0.000 title description 8
- 239000010703 silicon Substances 0.000 title description 7
- 239000000203 mixture Substances 0.000 claims description 82
- 229920000642 polymer Polymers 0.000 claims description 64
- 239000002253 acid Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 41
- 238000003384 imaging method Methods 0.000 claims description 31
- 238000004090 dissolution Methods 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- 239000000178 monomer Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- -1 ketals Chemical class 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 125000004407 fluoroaryl group Chemical group 0.000 claims description 8
- 125000005348 fluorocycloalkyl group Chemical group 0.000 claims description 8
- 230000002401 inhibitory effect Effects 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 238000003776 cleavage reaction Methods 0.000 claims description 6
- 125000003367 polycyclic group Chemical group 0.000 claims description 6
- 150000001241 acetals Chemical class 0.000 claims description 5
- 230000007017 scission Effects 0.000 claims description 5
- 239000004971 Cross linker Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 150000002905 orthoesters Chemical class 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 125000004434 sulfur atom Chemical group 0.000 claims description 2
- 150000004292 cyclic ethers Chemical group 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 77
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 24
- HZFQGYWRFABYSR-UHFFFAOYSA-N cyclohexanone enol methyl ether Natural products COC1=CCCCC1 HZFQGYWRFABYSR-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 238000009472 formulation Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000002904 solvent Substances 0.000 description 14
- 238000001459 lithography Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000012670 alkaline solution Substances 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000010511 deprotection reaction Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 4
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 125000006239 protecting group Chemical group 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920005573 silicon-containing polymer Polymers 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 2
- QUOCTKSEXQCBPE-UHFFFAOYSA-N 1,2-ditert-butyl-3-iodobenzene Chemical compound CC(C)(C)C1=CC=CC(I)=C1C(C)(C)C QUOCTKSEXQCBPE-UHFFFAOYSA-N 0.000 description 2
- QHMVQKOXILNZQR-UHFFFAOYSA-N 1-methoxyprop-1-ene Chemical compound COC=CC QHMVQKOXILNZQR-UHFFFAOYSA-N 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 2
- BUDQDWGNQVEFAC-UHFFFAOYSA-N Dihydropyran Chemical compound C1COC=CC1 BUDQDWGNQVEFAC-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- AFYCEAFSNDLKSX-UHFFFAOYSA-N coumarin 460 Chemical compound CC1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 AFYCEAFSNDLKSX-UHFFFAOYSA-N 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- 150000003456 sulfonamides Chemical class 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- LDMOEFOXLIZJOW-UHFFFAOYSA-N 1-dodecanesulfonic acid Chemical compound CCCCCCCCCCCCS(O)(=O)=O LDMOEFOXLIZJOW-UHFFFAOYSA-N 0.000 description 1
- ILZVJFHNPUWKQQ-UHFFFAOYSA-N 1-ethoxycyclohexene Chemical compound CCOC1=CCCCC1 ILZVJFHNPUWKQQ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 description 1
- KTWCUGUUDHJVIH-UHFFFAOYSA-N 2-hydroxybenzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(N(O)C2=O)=O)=C3C2=CC=CC3=C1 KTWCUGUUDHJVIH-UHFFFAOYSA-N 0.000 description 1
- JFUOAGBSDGCVES-UHFFFAOYSA-N 3-but-2-enyl-4-methylpyrrolidine-2,5-dione Chemical compound CC=CCC1C(C)C(=O)NC1=O JFUOAGBSDGCVES-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 229920002359 Tetronic® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007171 acid catalysis Methods 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- YBHILYKTIRIUTE-UHFFFAOYSA-N berberine Chemical compound C1=C2CC[N+]3=CC4=C(OC)C(OC)=CC=C4C=C3C2=CC2=C1OCO2 YBHILYKTIRIUTE-UHFFFAOYSA-N 0.000 description 1
- 229940093265 berberine Drugs 0.000 description 1
- QISXPYZVZJBNDM-UHFFFAOYSA-N berberine Natural products COc1ccc2C=C3N(Cc2c1OC)C=Cc4cc5OCOc5cc34 QISXPYZVZJBNDM-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000008056 dicarboxyimides Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- WTVXIBRMWGUIMI-UHFFFAOYSA-N trifluoro($l^{1}-oxidanylsulfonyl)methane Chemical group [O]S(=O)(=O)C(F)(F)F WTVXIBRMWGUIMI-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/693,199 US6939664B2 (en) | 2003-10-24 | 2003-10-24 | Low-activation energy silicon-containing resist system |
| PCT/US2004/035253 WO2005040918A2 (en) | 2003-10-24 | 2004-10-22 | Low-activation energy silicon-containing resist system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007512549A JP2007512549A (ja) | 2007-05-17 |
| JP2007512549A5 JP2007512549A5 (enExample) | 2007-11-22 |
| JP4530368B2 true JP4530368B2 (ja) | 2010-08-25 |
Family
ID=34522329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006536874A Expired - Fee Related JP4530368B2 (ja) | 2003-10-24 | 2004-10-22 | 活性化エネルギーの低いケイ素含有レジスト・システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6939664B2 (enExample) |
| EP (1) | EP1678556A4 (enExample) |
| JP (1) | JP4530368B2 (enExample) |
| KR (1) | KR100773011B1 (enExample) |
| CN (1) | CN100561337C (enExample) |
| WO (1) | WO2005040918A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261992B2 (en) * | 2000-12-21 | 2007-08-28 | International Business Machines Corporation | Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions |
| JP4262516B2 (ja) * | 2003-05-12 | 2009-05-13 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7432042B2 (en) * | 2003-12-03 | 2008-10-07 | United Microelectronics Corp. | Immersion lithography process and mask layer structure applied in the same |
| JP4494060B2 (ja) * | 2004-03-30 | 2010-06-30 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| TWI322334B (en) * | 2004-07-02 | 2010-03-21 | Rohm & Haas Elect Mat | Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein |
| US7320855B2 (en) * | 2004-11-03 | 2008-01-22 | International Business Machines Corporation | Silicon containing TARC/barrier layer |
| US7659050B2 (en) * | 2005-06-07 | 2010-02-09 | International Business Machines Corporation | High resolution silicon-containing resist |
| CN101198903B (zh) * | 2005-06-10 | 2011-09-07 | 奥贝达克特公司 | 利用中间印模的图案复制 |
| US8404427B2 (en) * | 2005-12-28 | 2013-03-26 | Fujifilm Corporation | Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition |
| US7407736B2 (en) * | 2006-01-31 | 2008-08-05 | International Business Machines Corporation | Methods of improving single layer resist patterning scheme |
| US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
| US8034532B2 (en) | 2006-04-28 | 2011-10-11 | International Business Machines Corporation | High contact angle topcoat material and use thereof in lithography process |
| US7951524B2 (en) * | 2006-04-28 | 2011-05-31 | International Business Machines Corporation | Self-topcoating photoresist for photolithography |
| US20070269736A1 (en) * | 2006-05-16 | 2007-11-22 | International Business Machines Corporation | NEW SUB 40 NM RESOLUTION Si CONTAINING RESIST SYSTEM |
| US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
| US8148043B2 (en) * | 2006-06-28 | 2012-04-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
| WO2008001782A1 (fr) * | 2006-06-28 | 2008-01-03 | Tokyo Ohka Kogyo Co., Ltd. | Composition de résine photosensible et procédé de formation d'un motif |
| WO2008002970A2 (en) * | 2006-06-28 | 2008-01-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
| US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
| EP2121808A1 (en) | 2007-02-27 | 2009-11-25 | AZ Electronic Materials USA Corp. | Silicon-based antifrelective coating compositions |
| US20090104566A1 (en) * | 2007-10-19 | 2009-04-23 | International Business Machines Corporation | Process of multiple exposures with spin castable film |
| CN101970209A (zh) * | 2008-01-31 | 2011-02-09 | 昭和电工株式会社 | 凹凸图案形成方法和利用该方法的磁记录介质的制造方法 |
| EP2199854B1 (en) * | 2008-12-19 | 2015-12-16 | Obducat AB | Hybrid polymer mold for nano-imprinting and method for making the same |
| EP2199855B1 (en) * | 2008-12-19 | 2016-07-20 | Obducat | Methods and processes for modifying polymer material surface interactions |
| US8932796B2 (en) * | 2011-11-10 | 2015-01-13 | International Business Machines Corporation | Hybrid photoresist composition and pattern forming method using thereof |
| FI128886B (en) * | 2019-02-25 | 2021-02-26 | Pibond Oy | Functional hydrogen silsesquioxane resins and the use thereof |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
| JP2697680B2 (ja) * | 1995-05-31 | 1998-01-14 | 日本電気株式会社 | 珪素含有高分子化合物および感光性樹脂組成物 |
| JP3505990B2 (ja) * | 1997-01-31 | 2004-03-15 | 信越化学工業株式会社 | 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法 |
| US5985524A (en) * | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
| JP3533951B2 (ja) * | 1997-08-06 | 2004-06-07 | 信越化学工業株式会社 | 高分子シリコーン化合物、レジスト材料及びパターン形成方法 |
| TW546542B (en) * | 1997-08-06 | 2003-08-11 | Shinetsu Chemical Co | High molecular weight silicone compounds, resist compositions, and patterning method |
| US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
| US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
| US6225403B1 (en) * | 1999-02-03 | 2001-05-01 | Barry R. Knowlton | Method and composition for treating fibrous substrates to impart oil, water and dry soil repellency |
| US6227546B1 (en) | 1999-03-26 | 2001-05-08 | Jetseal, Inc. | Resilient seal and method of using a resilient seal |
| KR100725462B1 (ko) * | 1999-12-06 | 2007-06-07 | 후지필름 가부시키가이샤 | 포지티브 포토레지스트 조성물 |
| US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
| US20010036594A1 (en) * | 2000-03-28 | 2001-11-01 | Fujitsu Limited | Resist composition for use in chemical amplification and method for forming a resist pattern thereof |
| US6531260B2 (en) * | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
| JP3410707B2 (ja) * | 2000-04-19 | 2003-05-26 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
| US6623909B2 (en) * | 2000-06-02 | 2003-09-23 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6420084B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
| JP2002082437A (ja) * | 2000-09-06 | 2002-03-22 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| US20020081520A1 (en) * | 2000-12-21 | 2002-06-27 | Ratnam Sooriyakumaran | Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications |
| US7261992B2 (en) * | 2000-12-21 | 2007-08-28 | International Business Machines Corporation | Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions |
| JP3931951B2 (ja) * | 2001-03-13 | 2007-06-20 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP3900246B2 (ja) * | 2001-03-13 | 2007-04-04 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP4061454B2 (ja) * | 2001-03-13 | 2008-03-19 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| US6908722B2 (en) * | 2001-06-29 | 2005-06-21 | Jsr Corporation | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition |
| US7244549B2 (en) * | 2001-08-24 | 2007-07-17 | Jsr Corporation | Pattern forming method and bilayer film |
-
2003
- 2003-10-24 US US10/693,199 patent/US6939664B2/en not_active Expired - Fee Related
-
2004
- 2004-10-22 JP JP2006536874A patent/JP4530368B2/ja not_active Expired - Fee Related
- 2004-10-22 CN CNB2004800311819A patent/CN100561337C/zh not_active Expired - Fee Related
- 2004-10-22 EP EP04796270A patent/EP1678556A4/en not_active Withdrawn
- 2004-10-22 KR KR1020067007410A patent/KR100773011B1/ko not_active Expired - Fee Related
- 2004-10-22 WO PCT/US2004/035253 patent/WO2005040918A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005040918A3 (en) | 2005-12-15 |
| CN100561337C (zh) | 2009-11-18 |
| WO2005040918A2 (en) | 2005-05-06 |
| US6939664B2 (en) | 2005-09-06 |
| EP1678556A4 (en) | 2010-01-13 |
| KR20060089739A (ko) | 2006-08-09 |
| CN1871550A (zh) | 2006-11-29 |
| US20050089792A1 (en) | 2005-04-28 |
| JP2007512549A (ja) | 2007-05-17 |
| EP1678556A2 (en) | 2006-07-12 |
| KR100773011B1 (ko) | 2007-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4530368B2 (ja) | 活性化エネルギーの低いケイ素含有レジスト・システム | |
| JP5884521B2 (ja) | パターン形成方法 | |
| JP5114806B2 (ja) | トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料 | |
| KR101398846B1 (ko) | 포토레지스트용 코팅 조성물 | |
| US7090963B2 (en) | Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging | |
| US6165682A (en) | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof | |
| CN101861638A (zh) | 光致抗蚀剂组合物以及用多层光致抗蚀剂体系进行多重曝光的方法 | |
| JP4299670B2 (ja) | ネガ型深紫外線フォトレジスト | |
| WO2014171984A2 (en) | Silicon-containing antireflective coatings including non-polymeric silsesquioxanes | |
| US7883828B2 (en) | Functionalized carbosilane polymers and photoresist compositions containing the same | |
| US20050106494A1 (en) | Silicon-containing resist systems with cyclic ketal protecting groups | |
| US8932796B2 (en) | Hybrid photoresist composition and pattern forming method using thereof | |
| JP7410943B2 (ja) | Ｐａｇが固定された表面上でのボトムアップ絶縁保護コーティングおよびフォトパターニング | |
| CN102597138B (zh) | 含硅涂料组合物及其使用方法 | |
| US7901864B2 (en) | Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition | |
| JP4356090B2 (ja) | シリコン含有レジスト組成物、およびパターニングされた材料を基板上に形成する方法（２層式リソグラフィ用の低シリコン・ガス放出レジスト） | |
| US7300741B2 (en) | Advanced chemically amplified resist for sub 30 nm dense feature resolution | |
| KR102856372B1 (ko) | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 | |
| US7659050B2 (en) | High resolution silicon-containing resist | |
| US7824845B2 (en) | Functionalized carbosilane polymers and photoresist compositions containing the same | |
| Kudo et al. | Latest developments in photosensitive developable bottom anti-reflective coating (DBARC) | |
| WO1999042903A1 (en) | RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS | |
| EP1716450A1 (en) | Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates | |
| JP2006512600A (ja) | 電子ベース・リソグラフィのための高感度レジスト組成物 | |
| JP4677423B2 (ja) | 電子ベース・リソグラフィのための高感度レジスト組成物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071003 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071003 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100323 |
|
| RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20100405 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100405 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100512 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100601 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20100602 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100604 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130618 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |