CN100561337C - 低活化能含硅抗蚀剂体系 - Google Patents

低活化能含硅抗蚀剂体系 Download PDF

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Publication number
CN100561337C
CN100561337C CNB2004800311819A CN200480031181A CN100561337C CN 100561337 C CN100561337 C CN 100561337C CN B2004800311819 A CNB2004800311819 A CN B2004800311819A CN 200480031181 A CN200480031181 A CN 200480031181A CN 100561337 C CN100561337 C CN 100561337C
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CN
China
Prior art keywords
resist
residue
solubleness
acid
fluoridizes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004800311819A
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English (en)
Chinese (zh)
Other versions
CN1871550A (zh
Inventor
黄武松
R·D·艾伦
M·安耶洛普洛斯
R·W·孔
R·苏里亚库马兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication of CN1871550A publication Critical patent/CN1871550A/zh
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Publication of CN100561337C publication Critical patent/CN100561337C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2004800311819A 2003-10-24 2004-10-22 低活化能含硅抗蚀剂体系 Expired - Fee Related CN100561337C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/693,199 US6939664B2 (en) 2003-10-24 2003-10-24 Low-activation energy silicon-containing resist system
US10/693,199 2003-10-24

Publications (2)

Publication Number Publication Date
CN1871550A CN1871550A (zh) 2006-11-29
CN100561337C true CN100561337C (zh) 2009-11-18

Family

ID=34522329

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800311819A Expired - Fee Related CN100561337C (zh) 2003-10-24 2004-10-22 低活化能含硅抗蚀剂体系

Country Status (6)

Country Link
US (1) US6939664B2 (enExample)
EP (1) EP1678556A4 (enExample)
JP (1) JP4530368B2 (enExample)
KR (1) KR100773011B1 (enExample)
CN (1) CN100561337C (enExample)
WO (1) WO2005040918A2 (enExample)

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US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
EP1612604A3 (en) * 2004-07-02 2006-04-05 Rohm and Haas Electronic Materials, L.L.C. Compositions and processes for immersion lithography
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
ATE419560T1 (de) * 2005-06-10 2009-01-15 Obducat Ab Kopieren eines musters mit hilfe eines zwischenstempels
US8404427B2 (en) * 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
US20070269736A1 (en) * 2006-05-16 2007-11-22 International Business Machines Corporation NEW SUB 40 NM RESOLUTION Si CONTAINING RESIST SYSTEM
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
JP5085649B2 (ja) * 2006-06-28 2012-11-28 ダウ コーニング コーポレーション 電子吸引基を有する塩基性添加剤を含有するシルセスキオキサン樹脂システム
WO2008002975A2 (en) * 2006-06-28 2008-01-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron- attracting functionalities
KR101057605B1 (ko) * 2006-06-28 2011-08-18 도오꾜오까고오교 가부시끼가이샤 감광성 수지 조성물 및 패턴 형성 방법
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR101523393B1 (ko) 2007-02-27 2015-05-27 이엠디 퍼포먼스 머티리얼스 코프. 규소를 주성분으로 하는 반사 방지 코팅 조성물
US20090104566A1 (en) * 2007-10-19 2009-04-23 International Business Machines Corporation Process of multiple exposures with spin castable film
US20110003176A1 (en) * 2008-01-31 2011-01-06 Showa Denko K.K. Process for forming concavo-convex patterns, and process for manufacturing magnetic recording media using the same
EP2199855B1 (en) * 2008-12-19 2016-07-20 Obducat Methods and processes for modifying polymer material surface interactions
EP2199854B1 (en) * 2008-12-19 2015-12-16 Obducat AB Hybrid polymer mold for nano-imprinting and method for making the same
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
FI128886B (en) * 2019-02-25 2021-02-26 Pibond Oy Functional hydrogen silsesquioxane resins and the use thereof

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EP0745633A2 (en) * 1995-05-31 1996-12-04 Nec Corporation Si containing high molecular compound and photosensitive resin composition
US6225403B1 (en) * 1999-02-03 2001-05-01 Barry R. Knowlton Method and composition for treating fibrous substrates to impart oil, water and dry soil repellency
US6309796B1 (en) * 1997-08-06 2001-10-30 Shin-Etsu Chemical Co., Ltd. High molecular weight silicone compounds resist compositions, and patterning method
US20010038967A1 (en) * 1999-12-06 2001-11-08 Kazuyoshi Mizutani Positive photoresist composition
US20020090572A1 (en) * 2000-12-21 2002-07-11 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications

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JP3505990B2 (ja) * 1997-01-31 2004-03-15 信越化学工業株式会社 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
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US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6087064A (en) * 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US6227546B1 (en) 1999-03-26 2001-05-08 Jetseal, Inc. Resilient seal and method of using a resilient seal
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
US20010036594A1 (en) * 2000-03-28 2001-11-01 Fujitsu Limited Resist composition for use in chemical amplification and method for forming a resist pattern thereof
US6531260B2 (en) * 2000-04-07 2003-03-11 Jsr Corporation Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition
JP3410707B2 (ja) * 2000-04-19 2003-05-26 松下電器産業株式会社 パターン形成材料及びパターン形成方法
KR100555285B1 (ko) * 2000-06-02 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 조성물 및 패턴 형성 방법
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JP2002082437A (ja) * 2000-09-06 2002-03-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US20020081520A1 (en) * 2000-12-21 2002-06-27 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications
JP4061454B2 (ja) * 2001-03-13 2008-03-19 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3931951B2 (ja) * 2001-03-13 2007-06-20 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP3900246B2 (ja) * 2001-03-13 2007-04-04 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
CN1916760B (zh) * 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
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Publication number Priority date Publication date Assignee Title
EP0745633A2 (en) * 1995-05-31 1996-12-04 Nec Corporation Si containing high molecular compound and photosensitive resin composition
US6309796B1 (en) * 1997-08-06 2001-10-30 Shin-Etsu Chemical Co., Ltd. High molecular weight silicone compounds resist compositions, and patterning method
US6225403B1 (en) * 1999-02-03 2001-05-01 Barry R. Knowlton Method and composition for treating fibrous substrates to impart oil, water and dry soil repellency
US20010038967A1 (en) * 1999-12-06 2001-11-08 Kazuyoshi Mizutani Positive photoresist composition
US20020090572A1 (en) * 2000-12-21 2002-07-11 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications

Also Published As

Publication number Publication date
WO2005040918A3 (en) 2005-12-15
EP1678556A2 (en) 2006-07-12
JP4530368B2 (ja) 2010-08-25
JP2007512549A (ja) 2007-05-17
KR20060089739A (ko) 2006-08-09
WO2005040918A2 (en) 2005-05-06
US20050089792A1 (en) 2005-04-28
KR100773011B1 (ko) 2007-11-05
US6939664B2 (en) 2005-09-06
CN1871550A (zh) 2006-11-29
EP1678556A4 (en) 2010-01-13

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171110

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171110

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091118

Termination date: 20191022

CF01 Termination of patent right due to non-payment of annual fee