KR100773011B1 - 저-활성화 에너지 규소-함유 레지스트 시스템 - Google Patents

저-활성화 에너지 규소-함유 레지스트 시스템 Download PDF

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Publication number
KR100773011B1
KR100773011B1 KR1020067007410A KR20067007410A KR100773011B1 KR 100773011 B1 KR100773011 B1 KR 100773011B1 KR 1020067007410 A KR1020067007410 A KR 1020067007410A KR 20067007410 A KR20067007410 A KR 20067007410A KR 100773011 B1 KR100773011 B1 KR 100773011B1
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South Korea
Prior art keywords
resist
fluorinated
acid
group
layer
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Expired - Fee Related
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KR1020067007410A
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Korean (ko)
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KR20060089739A (ko
Inventor
우-송 후앙
로버트 디. 알렌
마리 안젤로폴로스
라니 더블유. 공
라트남 수리야쿠마란
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020067007410A 2003-10-24 2004-10-22 저-활성화 에너지 규소-함유 레지스트 시스템 Expired - Fee Related KR100773011B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/693,199 US6939664B2 (en) 2003-10-24 2003-10-24 Low-activation energy silicon-containing resist system
US10/693,199 2003-10-24

Publications (2)

Publication Number Publication Date
KR20060089739A KR20060089739A (ko) 2006-08-09
KR100773011B1 true KR100773011B1 (ko) 2007-11-05

Family

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Family Applications (1)

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KR1020067007410A Expired - Fee Related KR100773011B1 (ko) 2003-10-24 2004-10-22 저-활성화 에너지 규소-함유 레지스트 시스템

Country Status (6)

Country Link
US (1) US6939664B2 (enExample)
EP (1) EP1678556A4 (enExample)
JP (1) JP4530368B2 (enExample)
KR (1) KR100773011B1 (enExample)
CN (1) CN100561337C (enExample)
WO (1) WO2005040918A2 (enExample)

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JP4262516B2 (ja) * 2003-05-12 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
TWI322334B (en) * 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
CN101198903B (zh) * 2005-06-10 2011-09-07 奥贝达克特公司 利用中间印模的图案复制
US8404427B2 (en) * 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US20070269736A1 (en) * 2006-05-16 2007-11-22 International Business Machines Corporation NEW SUB 40 NM RESOLUTION Si CONTAINING RESIST SYSTEM
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US8148043B2 (en) * 2006-06-28 2012-04-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
WO2008001782A1 (fr) * 2006-06-28 2008-01-03 Tokyo Ohka Kogyo Co., Ltd. Composition de résine photosensible et procédé de formation d'un motif
WO2008002970A2 (en) * 2006-06-28 2008-01-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
EP2121808A1 (en) 2007-02-27 2009-11-25 AZ Electronic Materials USA Corp. Silicon-based antifrelective coating compositions
US20090104566A1 (en) * 2007-10-19 2009-04-23 International Business Machines Corporation Process of multiple exposures with spin castable film
CN101970209A (zh) * 2008-01-31 2011-02-09 昭和电工株式会社 凹凸图案形成方法和利用该方法的磁记录介质的制造方法
EP2199854B1 (en) * 2008-12-19 2015-12-16 Obducat AB Hybrid polymer mold for nano-imprinting and method for making the same
EP2199855B1 (en) * 2008-12-19 2016-07-20 Obducat Methods and processes for modifying polymer material surface interactions
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
FI128886B (en) * 2019-02-25 2021-02-26 Pibond Oy Functional hydrogen silsesquioxane resins and the use thereof

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JPH11302382A (ja) 1997-08-06 1999-11-02 Shin Etsu Chem Co Ltd 高分子シリコーン化合物、レジスト材料及びパターン形成方法
US6225403B1 (en) 1999-02-03 2001-05-01 Barry R. Knowlton Method and composition for treating fibrous substrates to impart oil, water and dry soil repellency
US20010038967A1 (en) 1999-12-06 2001-11-08 Kazuyoshi Mizutani Positive photoresist composition
US20020090572A1 (en) 2000-12-21 2002-07-11 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications

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JP3900246B2 (ja) * 2001-03-13 2007-04-04 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
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Publication number Priority date Publication date Assignee Title
JPH11302382A (ja) 1997-08-06 1999-11-02 Shin Etsu Chem Co Ltd 高分子シリコーン化合物、レジスト材料及びパターン形成方法
US6225403B1 (en) 1999-02-03 2001-05-01 Barry R. Knowlton Method and composition for treating fibrous substrates to impart oil, water and dry soil repellency
US20010038967A1 (en) 1999-12-06 2001-11-08 Kazuyoshi Mizutani Positive photoresist composition
US20020090572A1 (en) 2000-12-21 2002-07-11 Ratnam Sooriyakumaran Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications

Also Published As

Publication number Publication date
WO2005040918A3 (en) 2005-12-15
CN100561337C (zh) 2009-11-18
WO2005040918A2 (en) 2005-05-06
US6939664B2 (en) 2005-09-06
EP1678556A4 (en) 2010-01-13
KR20060089739A (ko) 2006-08-09
CN1871550A (zh) 2006-11-29
US20050089792A1 (en) 2005-04-28
JP2007512549A (ja) 2007-05-17
EP1678556A2 (en) 2006-07-12
JP4530368B2 (ja) 2010-08-25

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