JP2007500455A - 予備適用アンダーフィル封入剤の使用方法 - Google Patents
予備適用アンダーフィル封入剤の使用方法 Download PDFInfo
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- JP2007500455A JP2007500455A JP2006533192A JP2006533192A JP2007500455A JP 2007500455 A JP2007500455 A JP 2007500455A JP 2006533192 A JP2006533192 A JP 2006533192A JP 2006533192 A JP2006533192 A JP 2006533192A JP 2007500455 A JP2007500455 A JP 2007500455A
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- 239000008393 encapsulating agent Substances 0.000 title claims abstract description 63
- 239000000203 mixture Substances 0.000 claims abstract description 73
- 229910000679 solder Inorganic materials 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000945 filler Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 13
- 150000008064 anhydrides Chemical class 0.000 claims abstract description 11
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- -1 expandable balloons Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000004005 microsphere Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000002904 solvent Substances 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 239000004820 Pressure-sensitive adhesive Substances 0.000 abstract description 10
- 239000013034 phenoxy resin Substances 0.000 abstract description 8
- 229920006287 phenoxy resin Polymers 0.000 abstract description 8
- 229920001169 thermoplastic Polymers 0.000 abstract description 8
- 239000004416 thermosoftening plastic Substances 0.000 abstract description 8
- 239000006260 foam Substances 0.000 abstract description 7
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 7
- 229920000642 polymer Polymers 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 229920005992 thermoplastic resin Polymers 0.000 abstract description 2
- 239000000080 wetting agent Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 229940106691 bisphenol a Drugs 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 229920002732 Polyanhydride Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000005001 laminate film Substances 0.000 description 4
- 239000006254 rheological additive Substances 0.000 description 4
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000006057 Non-nutritive feed additive Substances 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 239000002666 chemical blowing agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000374 eutectic mixture Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 150000002191 fatty alcohols Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical group COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004634 thermosetting polymer Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- IVIDDMGBRCPGLJ-UHFFFAOYSA-N 2,3-bis(oxiran-2-ylmethoxy)propan-1-ol Chemical compound C1OC1COC(CO)COCC1CO1 IVIDDMGBRCPGLJ-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 1
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- HTVITOHKHWFJKO-UHFFFAOYSA-N Bisphenol B Chemical compound C=1C=C(O)C=CC=1C(C)(CC)C1=CC=C(O)C=C1 HTVITOHKHWFJKO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920000103 Expandable microsphere Polymers 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000834 fixative Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005586 poly(adipic acid) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
本発明のアンダーフィル封入剤組成物において使用される樹脂は、それらが重合し得ることを意味する、硬化し得る化合物であり得る。本明細書において使用されるように、硬化(cure)するとは、架橋を伴って重合することを意味する。当分野において理解されているように、架橋は元素、分子基または化合物の橋による二つのポリマー鎖の結合であって、一般的には加熱によって生じるものである。
実施例1
熱可塑性および熱硬化性のアンダーフィル組成物を以下のように製造した(全ての成分の量は重量%で示されている)。溶剤と樹脂の混合物を、プロペラ攪拌機付きの混合容器に投入する。次いで、膨張性充填剤を添加して、均質になるまで5〜10分間混合する。次に、気泡の減圧除去を容易にするために、界面活性剤を添加する。その混合物を減圧容器中で28インチ(711mm)Hgより低い圧力で5分間脱泡する。結果として得られる熱可塑性アンダーフィルの配合物が表1に示される。
表3に挙げられる成分を有する、感圧性の予備適用される溶融性アンダーフィルの配合物を形成した。
Claims (33)
- a)少なくとも1種の膨張性充填剤材料を含有するアンダーフィル封入剤をシリコンチップパッケージに適用する工程、
b)前記封入剤が平滑で不粘着性のコーティングに凝固するように前記シリコンチップパッケージ上に前記封入剤をB‐ステージ加工する工程、
c)前記シリコンチップパッケージを基板に取り付けてアセンブリーを形成する工程、および
d)前記膨張性充填剤が膨張して前記アンダーフィル内に独立気泡構造を形成するように前記アセンブリーを熱にさらす工程
を含む、一つ以上の表面実装部品の製造方法。 - 前記封入剤が、スピンコーティング、スクリーン印刷またはステンシル印刷によって前記パッケージパネルに適用される、請求項1に記載の方法。
- 前記少なくとも1種の膨張性充填剤が、微小球、膨張性バルーン、およびそれらの混合物を含む群から選択されるものである、請求項1に記載の方法。
- 前記少なくとも1種の膨張性充填剤が、前記封入剤の約0.1重量%〜約10重量%の範囲を構成するものである、請求項1に記載の方法。
- 前記1種以上の膨張性充填剤が、約150℃よりも高い温度に曝されて膨張するものである、請求項1に記載の方法。
- 前記封入剤がフィルムの形状で供給される、請求項1に記載の方法。
- 曝される先端と少なくとも一つの側面を有する一つ以上のはんだバンプを含む一つ以上の表面実装部品の製造方法であって、
a)少なくとも1種の膨張性充填剤材料を含有するアンダーフィル封入剤を前記部品に適用する工程、
b)前記部品を基板に取り付けてアセンブリーを形成する工程、および
c)前記膨張性充填剤が膨張して前記封入剤内に独立気泡構造を形成するように前記アセンブリーを熱にさらす工程
を含む、方法。 - 感圧性で溶融可能なアンダーフィル封入剤を一つ以上の前記はんだバンプの先端に配置する工程をさらに含む、請求項7に記載の方法。
- 前記感圧性で溶融可能なアンダーフィル封入剤が前記はんだバンプの少なくとも一つの側面の少なくとも一部に適用される、請求項7に記載の方法。
- 前記封入剤が前記はんだバンプの高さの約10〜約70%の範囲の厚さで適用される、請求項7に記載の方法。
- 曝される先端と少なくとも一つの側面を有する一つ以上のはんだバンプを含む一つ以上の表面実装部品の製造方法であって、
a)アンダーフィル封入剤の融解温度よりも高い温度で前記アンダーフィル封入剤を供給する工程、
b)前記アンダーフィル封入剤のコーティングが前記はんだバンプの少なくとも一つの上に形成されるように、前記部品を前記アンダーフィル封入剤と接触させる工程、および
c)前記コーティングが粘着性の稠度に凝固するような温度に前記アンダーフィル封入剤を冷却する工程
を含む、方法。 - 感圧性で溶融可能なアンダーフィル封入剤を一つ以上の前記はんだバンプの先端に配置する工程をさらに含む、請求項11に記載の方法。
- 前記感圧性で溶融可能なアンダーフィル封入剤が前記はんだバンプの少なくとも一つの側面の少なくとも一部に適用される、請求項11に記載の方法。
- 前記封入剤が前記はんだバンプの高さの約10〜約70%の範囲の厚さで適用される、請求項11に記載の方法。
- 前記コーティングが粘着性になるように前記部品を加熱する工程をさらに含む、請求項11に記載の方法。
- 前記表面実装部品を基板と接触させる工程をさらに含む、請求項11に記載の方法。
- 前記封入剤が剥離ライナー上に供給される、請求項11に記載の方法。
- 前記部品を前記剥離ライナーから取り外す工程をさらに含む、請求項17に記載の方法。
- 前記封入剤がシリンジによって供給される、請求項11に記載の方法。
- 前記アンダーフィル封入剤が、1種以上のエポキシ樹脂、無水物硬化剤および少なくとも1種の触媒を含むものである、請求項11に記載の方法。
- 前記アンダーフィル封入剤が前記部品と前記基板間の接続を溶融させる、請求項11に記載の方法。
- 曝される先端と少なくとも一つの側面を有する一つ以上のはんだバンプを含む一つ以上の表面実装部品の製造方法であって、
a)第1のアンダーフィル封入剤を前記部品に供給する工程、
b)第2のアンダーフィル封入剤の融解温度よりも高い温度で前記第2のアンダーフィル封入剤を供給する工程、
c)アンダーフィル封入剤のコーティングがはんだバンプ上に形成されるように、CSPまたはBGAを前記第2のアンダーフィル封入剤と接触させる工程、および
d)前記コーティングが粘着性の稠度に凝固するような温度に前記第2のアンダーフィル封入剤を冷却する工程
を含む、方法。 - 前記第2のアンダーフィル封入剤が一つ以上の前記はんだバンプの先端に適用される、請求項22に記載の方法。
- 前記第2のアンダーフィル封入剤が前記はんだバンプの少なくとも一つの側面の少なくとも一部に適用される、請求項22に記載の方法。
- 前記第1のアンダーフィル封入剤が前記はんだバンプの高さの約10〜約70%の範囲の厚さで適用される、請求項22に記載の方法。
- 前記第1のアンダーフィル封入剤が少なくとも1種の膨張性充填剤材料を含有するものである、請求項22に記載の方法。
- 前記膨張性充填剤が膨張して前記第1のアンダーフィル封入剤内に独立気泡構造を形成するように前記アセンブリーを熱にさらす工程をさらに含む、請求項26に記載の方法。
- 前記第2の封入剤が剥離ライナー上に供給される、請求項22に記載の方法。
- 前記部品を前記剥離ライナーから取り外す工程をさらに含む、請求項27に記載の方法。
- 前記封入剤がシリンジによって供給される、請求項22に記載の方法。
- 前記コーティングが不粘着性になるように前記部品を加熱する工程をさらに含む、請求項22に記載の方法。
- 前記部品を基板と接触させる工程をさらに含む、請求項22に記載の方法。
- 前記第1のアンダーフィル封入剤が前記表面実装部品上でB‐ステージ加工される、請求項22に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/444,398 US7047633B2 (en) | 2003-05-23 | 2003-05-23 | Method of using pre-applied underfill encapsulant |
PCT/US2004/015560 WO2004114374A2 (en) | 2003-05-23 | 2004-05-18 | Method of using pre-applied underfill encapsulant |
Publications (2)
Publication Number | Publication Date |
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JP2007500455A true JP2007500455A (ja) | 2007-01-11 |
JP2007500455A5 JP2007500455A5 (ja) | 2007-07-26 |
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Country Status (6)
Country | Link |
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US (2) | US7047633B2 (ja) |
EP (2) | EP1627424A2 (ja) |
JP (1) | JP2007500455A (ja) |
KR (1) | KR20060009954A (ja) |
CN (1) | CN100414677C (ja) |
WO (1) | WO2004114374A2 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
US20040234689A1 (en) | 2004-11-25 |
WO2004114374A3 (en) | 2005-08-11 |
EP2037494A2 (en) | 2009-03-18 |
US20050074547A1 (en) | 2005-04-07 |
WO2004114374A2 (en) | 2004-12-29 |
EP1627424A2 (en) | 2006-02-22 |
CN1795550A (zh) | 2006-06-28 |
KR20060009954A (ko) | 2006-02-01 |
CN100414677C (zh) | 2008-08-27 |
US7047633B2 (en) | 2006-05-23 |
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