JP2007294488A - 半導体装置、電子部品、及び半導体装置の製造方法 - Google Patents

半導体装置、電子部品、及び半導体装置の製造方法 Download PDF

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Publication number
JP2007294488A
JP2007294488A JP2006117074A JP2006117074A JP2007294488A JP 2007294488 A JP2007294488 A JP 2007294488A JP 2006117074 A JP2006117074 A JP 2006117074A JP 2006117074 A JP2006117074 A JP 2006117074A JP 2007294488 A JP2007294488 A JP 2007294488A
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Prior art keywords
semiconductor chip
semiconductor device
external connection
semiconductor
connection terminal
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JP2006117074A
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English (en)
Japanese (ja)
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JP2007294488A5 (enExample
Inventor
Hidenori Takayanagi
秀則 高柳
Yukiharu Takeuchi
之治 竹内
Hironori Toyazaki
宏規 戸矢▲崎▼
Toshio Gomyo
利雄 五明
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2006117074A priority Critical patent/JP2007294488A/ja
Priority to KR1020070037328A priority patent/KR20070104236A/ko
Priority to US11/736,926 priority patent/US8525355B2/en
Publication of JP2007294488A publication Critical patent/JP2007294488A/ja
Publication of JP2007294488A5 publication Critical patent/JP2007294488A5/ja
Priority to US13/368,900 priority patent/US20120133056A1/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
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    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
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    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
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    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
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    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
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    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
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    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L25/10Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
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    • H01L2924/181Encapsulation
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
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    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
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    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2006117074A 2006-04-20 2006-04-20 半導体装置、電子部品、及び半導体装置の製造方法 Pending JP2007294488A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006117074A JP2007294488A (ja) 2006-04-20 2006-04-20 半導体装置、電子部品、及び半導体装置の製造方法
KR1020070037328A KR20070104236A (ko) 2006-04-20 2007-04-17 반도체 장치, 전자 장치, 및 반도체 장치의 제조 방법
US11/736,926 US8525355B2 (en) 2006-04-20 2007-04-18 Semiconductor device, electronic apparatus and semiconductor device fabricating method
US13/368,900 US20120133056A1 (en) 2006-04-20 2012-02-08 Semiconductor device, electronic apparatus and semiconductor device fabricating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006117074A JP2007294488A (ja) 2006-04-20 2006-04-20 半導体装置、電子部品、及び半導体装置の製造方法

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JP2007294488A true JP2007294488A (ja) 2007-11-08
JP2007294488A5 JP2007294488A5 (enExample) 2009-04-09

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US (2) US8525355B2 (enExample)
JP (1) JP2007294488A (enExample)
KR (1) KR20070104236A (enExample)

Cited By (1)

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US8664757B2 (en) 2010-07-12 2014-03-04 Samsung Electronics Co., Ltd. High density chip stacked package, package-on-package and method of fabricating the same

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KR100886717B1 (ko) * 2007-10-16 2009-03-04 주식회사 하이닉스반도체 적층 반도체 패키지 및 이의 제조 방법
US8014166B2 (en) * 2008-09-06 2011-09-06 Broadpak Corporation Stacking integrated circuits containing serializer and deserializer blocks using through silicon via
JP5918664B2 (ja) * 2012-09-10 2016-05-18 株式会社東芝 積層型半導体装置の製造方法
US9368422B2 (en) * 2012-12-20 2016-06-14 Nvidia Corporation Absorbing excess under-fill flow with a solder trench
JP2018101699A (ja) * 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
US20200118991A1 (en) * 2018-10-15 2020-04-16 Intel Corporation Pre-patterned fine-pitch bond pad interposer

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JP2003303919A (ja) * 2002-04-10 2003-10-24 Hitachi Ltd 半導体装置及びその製造方法
WO2004034433A2 (en) * 2002-10-08 2004-04-22 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package
JP2004179622A (ja) * 2002-11-15 2004-06-24 Renesas Technology Corp 半導体装置の製造方法
JP2004031946A (ja) * 2003-06-05 2004-01-29 Nec Electronics Corp 半導体装置及びその製造方法
JP2005268533A (ja) * 2004-03-18 2005-09-29 Shinko Electric Ind Co Ltd 積層型半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664757B2 (en) 2010-07-12 2014-03-04 Samsung Electronics Co., Ltd. High density chip stacked package, package-on-package and method of fabricating the same

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Publication number Publication date
US20120133056A1 (en) 2012-05-31
KR20070104236A (ko) 2007-10-25
US20070246842A1 (en) 2007-10-25
US8525355B2 (en) 2013-09-03

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