JP2007248141A - 受光素子及び光配線lsi - Google Patents
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Abstract
【解決手段】 入射光を表面プラズモンに変換するための結合周期構造12が表面に設けられ、該結合周期構造12中に表裏面を貫通する開口13が設けられた導電性薄膜11と、開口13の結合周期構造12が設けられた面と反対面の端部に配置された受光部とを有した受光素子であって、開口13の形状はスリット状であり、入射光の特定の偏光方向と直交する方向の開口幅が表面プラズモン波長の1/2より長く、且つ偏光方向と平行な方向の開口幅が表面プラズモン波長の1/2より短い。
【選択図】 図1
Description
図1は、本発明の第1の実施形態に係わる受光素子におけるプラズモン集光アンテナ部の概略構成を示す平面図である。
Pc〜λ(1/ε1+1/ε2)1/2
という値で近似される。反射周期構造(B)の周期Pbは、
Pb=Pc/2
とすれば良い。
図5は、本発明の第2の実施形態に係わる受光素子のプラズモン集光アンテナ部の概略構成を示す平面図である。なお、図5中の21〜23は図1中の11〜13に相当している。
図8及び図9は、本発明の第3の実施形態に係わる光配線LSIの概略構成を示す断面斜視図である。なお、図8、図9の中で、図6、図7と同じ番号は同様であり、その説明を省略する。
なお、本発明は上述した各実施形態に限定されるものではない。例えば、上述した本発明実施形態はいくつかの具体例を示しているが、これはあくまで構成例であり、本発明の主旨に従い個々の要素に他の手段(材料、寸法など)を用いても構わないものである。また、実施形態に示された材料、形状、配置などはあくまで一例であり、また、各実施形態を組み合わせて実施することも可能である。例えば、第1の実施形態では受光素子が偏光依存性を強く持ち、偏光面のずれに敏感となってしまうが、これを逆に利用し、2つの第1の実施形態による受光素子を用意し、それぞれ直交する配置とすることにより、偏光多重した一括照射の光に対し光を偏光分離して受信できるようにすることができる。
12,22…周期構造
13,23…微小開口
14,24…Si基板
15,25…電極
16…低濃度i層(受光層)
17…SiO2 熱酸化膜
31…半導体受光部
31a…p型ウェル
31b…n型受光層
32…CMOSトランジスタ
33…Cu配線
34…層間絶縁膜
35…多層配線構造部
36…金属柱(導電性柱)
Claims (9)
- 入射光を表面プラズモンに変換するための結合周期構造が表面に設けられ、該結合周期構造中に表裏面を貫通する開口が設けられた導電性薄膜と、前記開口の前記結合周期構造が設けられた面と反対面の端部に配置された受光部とを有した受光素子であって、
前記開口の形状はスリット状であり、前記入射光の偏光方向と直交する方向の開口幅が前記表面プラズモン波長の1/2より長く、且つ前記偏光方向と平行な方向の開口幅が前記表面プラズモン波長の1/2より短いことを特徴とする受光素子。 - 前記結合周期構造は、前記開口を中心とする同心円状構造であり、且つ前記開口から対称に前記偏光方向に広がる扇形領域に選択的に設けられていることを特徴とする請求項1記載の受光素子。
- 入射光を表面プラズモンに変換するための結合周期構造が表面に設けられ、該結合周期構造中に表裏面を貫通する開口が設けられた導電性薄膜と、前記開口の前記結合周期構造が設けられた面と反対面の端部に配置された受光部とを有した受光素子であって、
前記開口の形状は、2つのスリットを直交交差させた十字形であり、各々のスリットの長辺方向が前記表面プラズモン波長の1/2より長く、短辺方向が前記表面プラズモン波長の1/2より短いことを特徴とする受光素子。 - 前記結合周期構造は、前記開口を中心とする同心円構造であることを特徴とする請求項3記載の受光素子。
- 前記導電性薄膜の表面で前記結合周期構造の外側に、前記表面プラズモンを反射して閉じ込めるための反射周期構造が更に形成されていることを特徴とする請求項1〜4の何れかに記載の受光素子。
- 前記導電性薄膜は半導体基板上に形成され、前記受光部は前記半導体基板の表面にフォトダイオードを形成したものであることを特徴とする請求項1〜5の何れかに記載の受光素子。
- 半導体基板上に集積形成されたトランジスタ素子と、
前記トランジスタ素子上に設けられた多層配線構造部と、
前記多層配線構造部上に設けられ、入射光を表面プラズモンに変換するための結合周期構造が上面に形成され、且つ該結合周期構造中に上下面を貫通する開口が形成された導電性薄膜と、
前記多層配線構造部の上下面を貫通して設けられ、前記導電性薄膜の開口と連続する導波開口が内部に形成された導電性柱と、
前記導電性柱の導波開口の端部に位置するように前記半導体基板の表面に設けられた半導体受光部と、
を具備したことを特徴とする光配線LSI。 - 前記開口は、長辺が前記表面プラズモン波長の1/2より長くそれに直交する短辺が前記表面プラズモン波長の1/2より短いスリット状であり、前記結合周期構造が前記開口を中心とする同心円状構造であり、且つ前記開口から対称に該開口の短辺方向に広がる扇形領域に選択的に設けられていることを特徴とする請求項7記載の光配線LSI。
- 前記開口は、長辺方向が前記表面プラズモン波長の1/2より長く、短辺方向が前記表面プラズモン波長の1/2より短い2つのスリットを直交交差させた十字形であり、前記結合周期構造が前記開口を中心とする同心円構造であることを特徴とする請求項7記載の光配線LSI。
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JP2006069535A JP4703443B2 (ja) | 2006-03-14 | 2006-03-14 | 受光素子及び光配線lsi |
US11/610,151 US7768689B2 (en) | 2006-03-14 | 2006-12-13 | Photo detector and optically interconnected LSI |
TW095147705A TWI365540B (en) | 2006-03-14 | 2006-12-19 | Photo detector and optically interconnected lsi |
US12/797,291 US8044483B2 (en) | 2006-03-14 | 2010-06-09 | Photo detector and optically interconnected LSI |
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Also Published As
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TW200739928A (en) | 2007-10-16 |
US20070262405A1 (en) | 2007-11-15 |
US7768689B2 (en) | 2010-08-03 |
US20100244170A1 (en) | 2010-09-30 |
TWI365540B (en) | 2012-06-01 |
US8044483B2 (en) | 2011-10-25 |
JP4703443B2 (ja) | 2011-06-15 |
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