JP2007208972A - 入れ子状のトランスインピーダンス増幅器 - Google Patents
入れ子状のトランスインピーダンス増幅器 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/331—Sigma delta modulation being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45531—Indexing scheme relating to differential amplifiers the FBC comprising a parallel resonance circuit and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45652—Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade
Abstract
【解決手段】入れ子状の(ネステッド)トランスインピーダンス増幅器回路は、入力及び出力を有する0次のTIAと、第1の演算増幅器(オペアンプ)と、を備えている。オペアンプは、0次のTIAの出力に接続する入力と、該入力によって駆動される第1のトランジスタと、第1のバイアス電圧によって駆動され且つ上記第1のトランジスタに接続する第2のトランジスタと、第2のトランジスタに接続する第1の電流源と、第1のトランジスタと第2のトランジスタの間のノードに存在する出力と、を備える。
【選択図】図26
Description
Claims (22)
- 入力及び出力を有する0次のトランスインピーダンス増幅器(TIA)と、
前記0次のTIAの前記出力に接続する入力、
前記入力によって駆動される第1のトランジスタ、
第1のバイアス電圧によって駆動され、且つ、前記第1のトランジスタに接続する第2のトランジスタ、
前記第2のトランジスタに接続する第1の電流源、及び
前記第1のトランジスタ及び前記第2のトランジスタの間のノードにある出力、
を有する第1の演算増幅器(オペアンプ)と、
を備える入れ子状のTIA回路。 - 前記第1のトランジスタに接続する第2の電流源を更に備える、請求項1記載の入れ子状のTIA回路。
- 前記オペアンプの利得が、前記0次のTIAの利得より大きく、前記オペアンプの帯域幅が、前記0次のTIAの帯域幅より小さい、請求項1記載の入れ子状のTIA回路。
- 前記0次のTIAが、
第1の入力及び第1の出力を有する第1のオペアンプと、
第2の入力及び第2の出力を有し、該第2の入力が前記第1の出力に接続されている第2のオペアンプと、
前記第2の出力に接続する一端、及び、前記第2の入力に接続する他端を有する抵抗と、
を備える、請求項1記載の入れ子状のTIA回路。 - 前記第1のオペアンプの前記出力に接続する一端、及び、前記0次のTIAの前記入力に接続する他端を有する第1の抵抗を更に備える、請求項1記載の入れ子状のTIA回路。
- 第1の入力、第2の入力、第1の出力、及び第2の出力を有する0次の差動モードトランスインピーダンス増幅器(TIA)と、
前記0次の差動モードTIAの前記出力のうち対応の出力に接続する複数の入力、
前記第1の入力によって駆動される第1のトランジスタ、
前記第2の入力によって駆動される第2のトランジスタ、
第1のバイアス電圧によって駆動され、且つ、前記第1のトランジスタに接続する第3のトランジスタ、
前記第1のバイアス電圧によって駆動され、且つ、前記第2のトランジスタに接続する第4のトランジスタ、
前記第3のトランジスタに接続する第1の電流源、
前記第4のトランジスタに接続する第2の電流源、
前記第1のトランジスタと前記第3のトランジスタの間の接続部にある第1の出力、及び
前記第2のトランジスタと前記第4のトランジスタの間の接続部にある第2の出力、
を有する第1の差動モード演算増幅器(オペアンプ)と、
を備える、入れ子状の差動モードTIA回路。 - 前記第1のトランジスタ及び前記第2のトランジスタに接続する第3の電流源を更に備える、請求項6に記載の入れ子状の差動モードTIA回路。
- 前記第1の差動モードオペアンプの利得は、前記0次の差動モードTIAの利得より大きく、前記第1の差動モードオペアンプの帯域幅は、前記0次の差動モードTIAの帯域幅より小さい、請求項5に記載の入れ子状の差動モードTIA回路。
- 前記0次の差動モードTIAは、
複数の入力及び複数の出力を有する第2の差動モードオペアンプと、
複数の入力及び複数の出力を有する第3の差動モードオペアンプであって、該第3の差動モードオペアンプの前記複数の入力がそれぞれ、前記第2の差動モードオペアンプの前記複数の出力のうち対応の出力に接続している、該第3の差動モードオペアンプと、
第1の端部及び第2の端部を有する複数の抵抗であって、前記複数の抵抗の前記第1の端部及び第2の端部それぞれが、前記第3の差動モードオペアンプの前記複数の入力及び前記複数の出力に接続している、該複数の抵抗と、
を備える、請求項6に記載の入れ子状の差動モードTIA回路。 - 前記第1の差動モードオペアンプの前記第1の出力に接続する一端、及び、前記0次の差動モードTIAの前記第1の入力に接続する他端を有する第1の抵抗と、
前記第1の差動モードオペアンプの前記第2の出力に接続する一端、及び、前記0次の差動モードTIAの前記第2の入力に接続する他端を有する第2の抵抗と、
を更に備える、請求項6に記載の入れ子状の差動モードTIA回路。 - 第1の入力、第2の入力、第1の出力、及び第2の出力を有する0次の差動モードトランスインピーダンス増幅器(TIA)と、
第1の入力、第2の入力、第1の出力、及び第2の出力を有する差動モードのプッシュプルオペアンプであって、該第1の入力及び第2の入力がそれぞれ、前記0次の差動モードTIAの前記第1の出力及び前記第2の出力のうち対応の出力に接続する、該差動モードのプッシュプルオペアンプと、
を備える、入れ子状の差動モードTIA回路。 - 前記差動モードのプッシュプルオペアンプの利得が、前記0次の差動モードTIAの利得より大きく、前記差動モードのプッシュプルオペアンプの帯域幅が、前記0次の差動モードTIAの帯域幅より小さい、請求項11に記載の入れ子状の差動モードTIA回路。
- 前記0次の差動モードTIAは、
複数の入力及び複数の出力を有する第2の差動モードオペアンプと、
複数の入力及び複数の出力を有する第3の差動モードオペアンプであって、該第3の差動モードオペアンプの前記複数の入力はそれぞれ、前記第2の差動モードオペアンプの出力のうち対応の出力に接続している、該第3の差動モードオペアンプと、
第1の端部及び第2の端部を有する複数の抵抗であって、該第1の端部及び第2の端部はそれぞれ、前記第3の差動モードオペアンプの対応の入力及び出力に接続している、該複数の抵抗と、
を備える、請求項11に記載の入れ子状の差動モードTIA回路。 - 入力及び出力を有する0次のトランスインピーダンス増幅器(TIA)と、
出力、及び前記0次のTIAの出力に接続する入力を有する第1の演算増幅器(オペアンプ)と、
第1の電圧を前記0次のTIAに印加する第1の電源入力と、
第2の電圧を受ける第2の電源入力と、
前記第1の電圧及び前記第2の電圧に基づく第3の電圧であって、前記オペアンプに印加される該第3の電圧を生成する電荷ポンプモジュールと、
を備える、入れ子状のTIA回路。 - 前記0次のTIAは、
第1の入力及び第1の出力を有する第1のオペアンプと、
第2の入力及び第2の出力を有する第2のオペアンプであって、該第2の入力が前記第1の出力に接続する、該第2のオペアンプと、
前記第2の出力に接続する一端、及び、前記第2の入力に接続する他端を有する抵抗と、
を備える、請求項14に記載の入れ子状のTIA回路。 - 前記第2の電圧を調整する電圧調整器を更に備える、請求項14に記載の入れ子状のTIA回路。
- 前記オペアンプの出力に接続する発光ダイオードを更に備える、請求項14に記載の入れ子状のTIA回路。
- 前記第1の電圧が、前記第2の電圧より大きい、請求項14に記載の入れ子状のTIA回路。
- 前記第3の電圧が、前記第1の電圧と前記第2の電圧の和に略等しい、請求項14に記載の入れ子状のTIA回路。
- 前記第1の電圧が、別にアナログ回路に印加され、前記第2の電圧が、別にデジタル回路に印加される、請求項16に記載の入れ子状のTIA回路。
- 前記第1の電圧が、約2.5Vと3.3Vの間の電圧である、請求項14に記載の入れ子状のTIA回路。
- 前記第2の電圧が、約1.2Vである、請求項21に記載の入れ子状のTIA回路。
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US75989906P | 2006-01-18 | 2006-01-18 | |
US60/759899 | 2006-01-18 | ||
US79856706P | 2006-05-08 | 2006-05-08 | |
US79848006P | 2006-05-08 | 2006-05-08 | |
US60/798480 | 2006-05-08 | ||
US60/798567 | 2006-05-08 | ||
US81726806P | 2006-06-29 | 2006-06-29 | |
US60/817268 | 2006-06-29 | ||
US11/495813 | 2006-07-28 | ||
US11/495,813 US7551024B2 (en) | 2001-03-13 | 2006-07-28 | Nested transimpedance amplifier |
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CN102095500A (zh) * | 2011-01-24 | 2011-06-15 | 杭州电子科技大学 | 印染坯布染色过程色度检测电路 |
KR20140082801A (ko) * | 2011-10-12 | 2014-07-02 | 마벨 월드 트레이드 리미티드 | 무선 주파수 식별 회로를 위한 안테나 인터페이스 |
JP2015502677A (ja) * | 2011-10-12 | 2015-01-22 | マーベル ワールド トレード リミテッド | 無線自動識別回路のためのアンテナインタフェース |
KR101956873B1 (ko) | 2011-10-12 | 2019-06-19 | 마벨 월드 트레이드 리미티드 | 무선 주파수 식별 회로를 위한 안테나 인터페이스 |
JP2018007258A (ja) * | 2016-06-30 | 2018-01-11 | ケースレー・インスツルメンツ・インコーポレイテッドKeithley Instruments,Inc. | 電流電圧変換回路 |
JP7093616B2 (ja) | 2016-06-30 | 2022-06-30 | ケースレー・インスツルメンツ・エルエルシー | 電流電圧変換回路 |
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EP1811657A2 (en) | 2007-07-25 |
US7405616B2 (en) | 2008-07-29 |
SG134250A1 (en) | 2007-08-29 |
JP2012135025A (ja) | 2012-07-12 |
US7551024B2 (en) | 2009-06-23 |
US20110018627A1 (en) | 2011-01-27 |
TW200731659A (en) | 2007-08-16 |
US20080272848A1 (en) | 2008-11-06 |
EP1811657B1 (en) | 2019-03-13 |
US20060261892A1 (en) | 2006-11-23 |
US20070103231A1 (en) | 2007-05-10 |
US7808311B2 (en) | 2010-10-05 |
TWI420804B (zh) | 2013-12-21 |
JP5367857B2 (ja) | 2013-12-11 |
TWI416864B (zh) | 2013-11-21 |
JP5010293B2 (ja) | 2012-08-29 |
US8159293B2 (en) | 2012-04-17 |
EP1811657A3 (en) | 2009-03-04 |
US7616057B2 (en) | 2009-11-10 |
US20100073083A1 (en) | 2010-03-25 |
TW200733547A (en) | 2007-09-01 |
US20070096808A1 (en) | 2007-05-03 |
US7626453B2 (en) | 2009-12-01 |
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