JP2007165861A5 - - Google Patents

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Publication number
JP2007165861A5
JP2007165861A5 JP2006304812A JP2006304812A JP2007165861A5 JP 2007165861 A5 JP2007165861 A5 JP 2007165861A5 JP 2006304812 A JP2006304812 A JP 2006304812A JP 2006304812 A JP2006304812 A JP 2006304812A JP 2007165861 A5 JP2007165861 A5 JP 2007165861A5
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film
conductive film
conductive
semiconductor
semiconductor device
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JP2006304812A
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JP5089139B2 (ja
JP2007165861A (ja
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JP2006304812A 2005-11-15 2006-11-10 半導体装置の作製方法 Active JP5089139B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006304812A JP5089139B2 (ja) 2005-11-15 2006-11-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005329806 2005-11-15
JP2005329806 2005-11-15
JP2006304812A JP5089139B2 (ja) 2005-11-15 2006-11-10 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2009076053A Division JP5089636B2 (ja) 2005-11-15 2009-03-26 半導体装置の作製方法及び液晶表示装置の作製方法
JP2009236821A Division JP2010010721A (ja) 2005-11-15 2009-10-14 ダイオード及びアクティブマトリクス表示装置
JP2011002880A Division JP5178850B2 (ja) 2005-11-15 2011-01-11 半導体装置の作製方法

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JP2007165861A JP2007165861A (ja) 2007-06-28
JP2007165861A5 true JP2007165861A5 (enrdf_load_stackoverflow) 2009-05-14
JP5089139B2 JP5089139B2 (ja) 2012-12-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492760B2 (en) 2008-08-08 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1821578A3 (en) 2006-02-21 2010-07-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP5393058B2 (ja) * 2007-09-05 2014-01-22 キヤノン株式会社 電界効果型トランジスタ
TWI637444B (zh) 2008-08-08 2018-10-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101722913B1 (ko) * 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2327069A4 (en) 2008-09-12 2013-03-20 Semiconductor Energy Lab DISPLAY DEVICE
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101762112B1 (ko) 2008-09-19 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정표시장치
CN104134673B (zh) * 2008-09-19 2017-04-12 株式会社半导体能源研究所 显示装置及其制造方法
CN102881696A (zh) * 2008-09-19 2013-01-16 株式会社半导体能源研究所 显示装置
KR101803720B1 (ko) 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
TWI831050B (zh) * 2008-11-07 2024-02-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR102149626B1 (ko) 2008-11-07 2020-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI656645B (zh) * 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI616707B (zh) 2008-11-28 2018-03-01 半導體能源研究所股份有限公司 液晶顯示裝置
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8383470B2 (en) * 2008-12-25 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI617029B (zh) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 半導體裝置
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101579453B1 (ko) 2009-04-29 2015-12-24 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
CN102422426B (zh) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 半导体装置的制造方法
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101320229B1 (ko) 2009-07-27 2013-10-21 가부시키가이샤 고베 세이코쇼 배선 구조 및 배선 구조를 구비한 표시 장치
WO2011027649A1 (en) 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
KR101269812B1 (ko) 2009-09-04 2013-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 패널, 표시 모듈, 전자 기기 및 표시 장치
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101809759B1 (ko) * 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
WO2011036987A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101082254B1 (ko) * 2009-11-04 2011-11-09 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
CN102640293B (zh) * 2009-11-27 2015-07-22 株式会社半导体能源研究所 半导体器件
KR102153034B1 (ko) 2009-12-04 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102656690B (zh) * 2009-12-25 2016-04-20 株式会社半导体能源研究所 半导体装置
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR102174859B1 (ko) * 2010-01-22 2020-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8436403B2 (en) * 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011105184A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011105198A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102292523B1 (ko) * 2010-04-02 2021-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5771079B2 (ja) * 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 撮像装置
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
JP5933895B2 (ja) * 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US8941113B2 (en) * 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
JP6060972B2 (ja) * 2012-07-05 2017-01-18 株式会社ニコン 酸化亜鉛薄膜の製造方法、薄膜トランジスタの製造方法および透明酸化物配線の製造方法
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
DE102013111501B4 (de) 2013-10-18 2024-02-08 Universität Stuttgart Dünnschichttransistor und Verfahren zu seiner Herstellung
CN104637950A (zh) * 2013-11-14 2015-05-20 上海和辉光电有限公司 薄膜晶体管驱动背板及其制造方法
CN107111972B (zh) 2014-10-28 2020-04-28 株式会社半导体能源研究所 功能面板、功能面板的制造方法、模块、数据处理装置
WO2016067144A1 (en) 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
US10141544B2 (en) 2016-08-10 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent display device and manufacturing method thereof
JP6542329B2 (ja) * 2017-11-14 2019-07-10 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252973A (ja) * 1986-04-25 1987-11-04 Nec Corp 順スタガ−ド型薄膜トランジスタ
JPH01236655A (ja) * 1988-03-17 1989-09-21 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
JP3106786B2 (ja) * 1993-08-26 2000-11-06 松下電器産業株式会社 半導体装置およびその製造方法
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP4483235B2 (ja) * 2003-09-01 2010-06-16 カシオ計算機株式会社 トランジスタアレイ基板の製造方法及びトランジスタアレイ基板
JP2006344849A (ja) * 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492760B2 (en) 2008-08-08 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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