JP2007096034A - 絶縁ゲート型電界効果トランジスタおよびその製造方法 - Google Patents
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Abstract
【解決手段】ゲート電極の中央に分離孔を設ける。ドレイン−ソース間電圧VDSを低減し、空乏層幅が狭くなった場合における、帰還容量Crssの急激な増大を抑制できる。これにより、高周波スイッチング特性が向上する。また、分離孔からn型不純物を注入し、チャネル領域間にn型不純物領域を形成する。ゲート電極下方を低抵抗にできるので、オン抵抗を低減できる。n型不純物領域はセルフアラインで形成できる。
【選択図】 図1
Description
2 n−型半導体層
4 チャネル領域
11 ゲート酸化膜
13 ゲート電極
14 n型不純物領域
14’ n型領域
15 ソース領域
15’ n+型不純物領域
16 層間絶縁膜
16a 固相拡散源
16b 絶縁膜
17 ボディ領域
18 ソース電極
20 溝
21 n+半導体基板
22 n−型エピタキシャル層(ドレイン領域)
24 チャネル領域
31 ゲート酸化膜
33 ゲート電極
35 ソース領域
36 層間絶縁膜
37 ボディ領域
38 ソース電極
50 空乏層
Claims (12)
- 一導電型半導体基板と、
前記基板上に設けられた一導電型の半導体層と、
前記半導体層表面に複数設けられた逆導電型のチャネル領域と、
隣り合う前記チャネル領域間の前記半導体層表面に設けられたゲート電極と、
前記ゲート電極を等分割する分離孔と、
前記分離孔および前記ゲート電極を被覆する絶縁膜と、
前記チャネル領域表面に設けられた一導電型のソース領域と、
前記ソース領域間の前記チャネル領域表面に設けられた逆導電型のボディ領域と、
を具備することを特徴とする絶縁ゲート型電界効果トランジスタ。 - 前記分離孔下方の前記半導体層表面に該半導体層より不純物濃度が高い一導電型不純物領域を設けることを特徴とする請求項1に記載の絶縁ゲート型電界効果トランジスタ。
- 前記分離孔および前記一導電型不純物領域の中心はほぼ一致することを特徴とする請求項1に記載の絶縁ゲート型電界効果トランジスタ。
- 前記分離孔を、他の絶縁膜で被覆することを特徴とする請求項1に記載の絶縁ゲート型電界効果トランジスタ。
- 前記他の絶縁膜は、前記一導電型不純物領域の固相拡散源を含むことを特徴とする請求項4に記載の絶縁ゲート型電界効果トランジスタ。
- 1つの前記チャネル領域の隣り合う前記ソース領域間に、該ソース領域より深い溝を設け、該溝の側面に前記ソース領域が露出し、前記溝の底面に前記ボディ領域が露出することを特徴とする請求項1に記載の絶縁ゲート型電界効果トランジスタ。
- 一導電型半導体基板に一導電型半導体層を積層し、該一導電型半導体層表面に絶縁膜を形成する工程と、
分離孔により等分割されたゲート電極を前記絶縁膜上に形成する工程と、
前記ゲート電極に隣り合う前記半導体層表面に複数の逆導電型のチャネル領域を形成する工程と、
前記チャネル領域表面に一導電型のソース領域および逆導電型のボディ領域を形成する工程と、
前記分離孔および前記ゲート電極を被覆する他の絶縁膜を形成する工程と、を具備することを特徴とする絶縁ゲート型電界効果トランジスタの製造方法。 - 前記ゲート電極をマスクとして前記分離孔に一導電型不純物をイオン注入し、前記ゲート電極下方の前記半導体層表面にセルフアラインで前記半導体層より不純物濃度が高い一導電型不純物領域を形成することを特徴とする請求項7に記載の絶縁ゲート型電界効果トランジスタの製造方法。
- 一導電型半導体基板に一導電型半導体層を積層し、該一導電型半導体層表面に第1絶縁膜を形成する工程と、
分離孔により等分割されたゲート電極を前記第1絶縁膜上に形成する工程と、
前記分離孔を、一導電型不純物を含む第2絶縁膜で被覆し、前記ゲート電極に隣り合う前記半導体層表面に複数の逆導電型のチャネル領域を形成し、前記ゲート電極下方に前記半導体層より不純物濃度が高い一導電型不純物領域を形成する工程と、
前記チャネル領域表面に一導電型のソース領域および逆導電型のボディ領域を形成する工程と、
前記分離孔および前記ゲート電極を被覆する第3絶縁膜を形成する工程と、を具備することを特徴とする絶縁ゲート型電界効果トランジスタの製造方法。 - 前記ゲート電極間に露出した前記基板表面に、高濃度一導電型不純物領域を形成し、該高濃度一導電型不純物領域を溝により分割して前記ソース領域を形成することを特徴とする請求項9に記載の絶縁ゲート型電界効果トランジスタの製造方法。
- 前記分離孔に露出する前記絶縁膜を膜厚制御エッチングすることを特徴とする請求項7に記載の絶縁ゲート型電界効果トランジスタの製造方法。
- 前記一導電型不純物領域および前記チャネル領域の不純物濃度をそれぞれ所望の値に選択することを特徴とする請求項7または請求項9に記載の絶縁ゲート型電界効果トランジスタの製造方法。
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JP2005284110A JP5025935B2 (ja) | 2005-09-29 | 2005-09-29 | 絶縁ゲート型電界効果トランジスタの製造方法 |
TW095128675A TWI316757B (en) | 2005-09-29 | 2006-08-04 | Insulation gate type field effect transistor and method for making such transistor |
CNB2006101212065A CN100502044C (zh) | 2005-09-29 | 2006-08-17 | 绝缘栅型场效应晶体管及其制造方法 |
US11/519,208 US20070072352A1 (en) | 2005-09-29 | 2006-09-12 | Insulated gate field effect transistor and manufacturing method thereof |
KR1020060088878A KR100787731B1 (ko) | 2005-09-29 | 2006-09-14 | 절연 게이트형 전계 효과 트랜지스터 및 그 제조 방법 |
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JP2015138960A (ja) * | 2014-01-24 | 2015-07-30 | ローム株式会社 | 半導体装置 |
JP2017041622A (ja) * | 2015-08-19 | 2017-02-23 | 富士電機株式会社 | 半導体装置および製造方法 |
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- 2006-09-12 US US11/519,208 patent/US20070072352A1/en not_active Abandoned
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JP5025935B2 (ja) | 2012-09-12 |
KR100787731B1 (ko) | 2007-12-24 |
KR20070036664A (ko) | 2007-04-03 |
CN1941413A (zh) | 2007-04-04 |
US20070072352A1 (en) | 2007-03-29 |
TWI316757B (en) | 2009-11-01 |
CN100502044C (zh) | 2009-06-17 |
TW200713584A (en) | 2007-04-01 |
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