JP2007036211A5 - - Google Patents
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- Publication number
- JP2007036211A5 JP2007036211A5 JP2006169083A JP2006169083A JP2007036211A5 JP 2007036211 A5 JP2007036211 A5 JP 2007036211A5 JP 2006169083 A JP2006169083 A JP 2006169083A JP 2006169083 A JP2006169083 A JP 2006169083A JP 2007036211 A5 JP2007036211 A5 JP 2007036211A5
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- layer
- conductivity type
- film
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 24
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 18
- -1 aluminum silicon Chemical compound 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 15
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 229910000838 Al alloy Inorganic materials 0.000 claims 8
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 230000000903 blocking Effects 0.000 claims 3
- 229910000679 solder Inorganic materials 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 230000001681 protective Effects 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006169083A JP2007036211A (ja) | 2005-06-20 | 2006-06-19 | 半導体素子の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005179720 | 2005-06-20 | ||
| JP2006169083A JP2007036211A (ja) | 2005-06-20 | 2006-06-19 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007036211A JP2007036211A (ja) | 2007-02-08 |
| JP2007036211A5 true JP2007036211A5 (fr) | 2010-04-08 |
Family
ID=37795026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006169083A Pending JP2007036211A (ja) | 2005-06-20 | 2006-06-19 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007036211A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112008003787B4 (de) * | 2008-03-31 | 2015-01-22 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
| DE112009004530B4 (de) * | 2009-03-23 | 2015-04-02 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung |
| JP5707709B2 (ja) | 2009-03-23 | 2015-04-30 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP5600985B2 (ja) * | 2010-03-24 | 2014-10-08 | 三菱電機株式会社 | 電力半導体装置の製造方法 |
| JP5545000B2 (ja) | 2010-04-14 | 2014-07-09 | 富士電機株式会社 | 半導体装置の製造方法 |
| US8748236B2 (en) * | 2010-11-10 | 2014-06-10 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing semiconductor device |
| CN104170092B (zh) * | 2012-05-15 | 2017-03-08 | 富士电机株式会社 | 半导体装置 |
| CN105103272B (zh) | 2013-09-27 | 2018-10-09 | 富士电机株式会社 | 半导体装置的制造方法 |
| JP6191587B2 (ja) | 2014-12-08 | 2017-09-06 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352840B2 (ja) * | 1994-03-14 | 2002-12-03 | 株式会社東芝 | 逆並列接続型双方向性半導体スイッチ |
| JP3339552B2 (ja) * | 1996-11-27 | 2002-10-28 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP2001135814A (ja) * | 1999-11-02 | 2001-05-18 | Shindengen Electric Mfg Co Ltd | 縦型ｍｏｓ電界効果トランジスタ |
| JP4023773B2 (ja) * | 2001-03-30 | 2007-12-19 | 株式会社東芝 | 高耐圧半導体装置 |
| JP2004119498A (ja) * | 2002-09-24 | 2004-04-15 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| JP4049035B2 (ja) * | 2003-06-27 | 2008-02-20 | 株式会社デンソー | 半導体装置の製造方法 |
| JP4221012B2 (ja) * | 2006-06-12 | 2009-02-12 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
-
2006
- 2006-06-19 JP JP2006169083A patent/JP2007036211A/ja active Pending
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