JP2007027358A5 - - Google Patents

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Publication number
JP2007027358A5
JP2007027358A5 JP2005206616A JP2005206616A JP2007027358A5 JP 2007027358 A5 JP2007027358 A5 JP 2007027358A5 JP 2005206616 A JP2005206616 A JP 2005206616A JP 2005206616 A JP2005206616 A JP 2005206616A JP 2007027358 A5 JP2007027358 A5 JP 2007027358A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2005206616A
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JP4863665B2 (ja
JP2007027358A (ja
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Priority claimed from JP2005206616A external-priority patent/JP4863665B2/ja
Priority to JP2005206616A priority Critical patent/JP4863665B2/ja
Priority to TW095111172A priority patent/TWI298534B/zh
Priority to US11/393,773 priority patent/US7582946B2/en
Priority to DE102006029499.8A priority patent/DE102006029499B4/de
Priority to CNB2006101016163A priority patent/CN100550381C/zh
Priority to KR1020060060241A priority patent/KR100756306B1/ko
Publication of JP2007027358A publication Critical patent/JP2007027358A/ja
Publication of JP2007027358A5 publication Critical patent/JP2007027358A5/ja
Priority to US12/489,841 priority patent/US7763950B2/en
Publication of JP4863665B2 publication Critical patent/JP4863665B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2005206616A 2005-07-15 2005-07-15 半導体装置およびその製造方法 Active JP4863665B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005206616A JP4863665B2 (ja) 2005-07-15 2005-07-15 半導体装置およびその製造方法
TW095111172A TWI298534B (en) 2005-07-15 2006-03-30 Semiconductor device and method for producing the same
US11/393,773 US7582946B2 (en) 2005-07-15 2006-03-31 Semiconductor device with multi-trench separation region and method for producing the same
DE102006029499.8A DE102006029499B4 (de) 2005-07-15 2006-06-27 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CNB2006101016163A CN100550381C (zh) 2005-07-15 2006-06-30 半导体器件及其制造方法
KR1020060060241A KR100756306B1 (ko) 2005-07-15 2006-06-30 반도체 장치 및 그 제조 방법
US12/489,841 US7763950B2 (en) 2005-07-15 2009-06-23 Semiconductor device with multi-trench separation region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005206616A JP4863665B2 (ja) 2005-07-15 2005-07-15 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011190571A Division JP5318927B2 (ja) 2011-09-01 2011-09-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2007027358A JP2007027358A (ja) 2007-02-01
JP2007027358A5 true JP2007027358A5 (ja) 2008-02-14
JP4863665B2 JP4863665B2 (ja) 2012-01-25

Family

ID=37563654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005206616A Active JP4863665B2 (ja) 2005-07-15 2005-07-15 半導体装置およびその製造方法

Country Status (6)

Country Link
US (2) US7582946B2 (ja)
JP (1) JP4863665B2 (ja)
KR (1) KR100756306B1 (ja)
CN (1) CN100550381C (ja)
DE (1) DE102006029499B4 (ja)
TW (1) TWI298534B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4914589B2 (ja) 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
EP1852916A1 (en) * 2006-05-05 2007-11-07 Austriamicrosystems AG High voltage transistor
US8097921B2 (en) * 2007-11-09 2012-01-17 Denso Corporation Semiconductor device with high-breakdown-voltage transistor
JP5358089B2 (ja) * 2007-12-21 2013-12-04 スパンション エルエルシー 半導体装置
JP2009238980A (ja) * 2008-03-27 2009-10-15 Hitachi Ltd 半導体装置及びその製造方法
JP4797203B2 (ja) 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置
JP5499915B2 (ja) * 2009-06-10 2014-05-21 富士電機株式会社 高耐圧半導体装置
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
JP5458809B2 (ja) 2009-11-02 2014-04-02 富士電機株式会社 半導体装置
JP5505499B2 (ja) * 2010-06-04 2014-05-28 富士電機株式会社 半導体装置および駆動回路
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5636827B2 (ja) * 2010-08-31 2014-12-10 株式会社デンソー 半導体装置
JP5565309B2 (ja) * 2010-12-29 2014-08-06 三菱電機株式会社 半導体装置
US8631371B2 (en) 2011-06-29 2014-01-14 International Business Machines Corporation Method, system and program storage device for modeling the capacitance associated with a diffusion region of a silicon-on-insulator device
CN102683262A (zh) * 2012-04-28 2012-09-19 东南大学 一种基于绝缘体上硅的高压隔离结构
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6115408B2 (ja) 2013-08-29 2017-04-19 三菱電機株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
CN104465722B (zh) * 2014-12-09 2017-06-06 上海华虹宏力半导体制造有限公司 高压隔离环结构
JP6492903B2 (ja) * 2015-04-08 2019-04-03 富士電機株式会社 半導体装置
DE112017000081B4 (de) * 2016-03-14 2022-12-29 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
TWI608606B (zh) 2017-01-26 2017-12-11 新唐科技股份有限公司 電平位移器以及半導體元件
JP6729487B2 (ja) * 2017-05-15 2020-07-22 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
KR102227666B1 (ko) * 2017-05-31 2021-03-12 주식회사 키 파운드리 고전압 반도체 소자

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Publication number Priority date Publication date Assignee Title
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JP3850146B2 (ja) 1998-07-07 2006-11-29 三菱電機株式会社 分離構造とその分離構造を備える半導体装置
JP4206543B2 (ja) * 1999-02-02 2009-01-14 株式会社デンソー 半導体装置
JP2001025235A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp 駆動装置および電力変換装置
JP4471480B2 (ja) * 2000-10-18 2010-06-02 三菱電機株式会社 半導体装置
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置
JP4094984B2 (ja) * 2003-04-24 2008-06-04 三菱電機株式会社 半導体装置
JP4326835B2 (ja) 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
US7135751B2 (en) * 2003-07-25 2006-11-14 Fuji Electric Device Technology Co., Ltd. High breakdown voltage junction terminating structure
JP2005064472A (ja) 2003-07-25 2005-03-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP4654574B2 (ja) * 2003-10-20 2011-03-23 トヨタ自動車株式会社 半導体装置
JP4667756B2 (ja) 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置

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