JP2006516361A5 - - Google Patents

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Publication number
JP2006516361A5
JP2006516361A5 JP2006500897A JP2006500897A JP2006516361A5 JP 2006516361 A5 JP2006516361 A5 JP 2006516361A5 JP 2006500897 A JP2006500897 A JP 2006500897A JP 2006500897 A JP2006500897 A JP 2006500897A JP 2006516361 A5 JP2006516361 A5 JP 2006516361A5
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JP
Japan
Prior art keywords
window frame
flange
semiconductor package
gold
melting temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006500897A
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English (en)
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JP2006516361A (ja
JP4466645B2 (ja
Filing date
Publication date
Priority claimed from US10/339,834 external-priority patent/US7298046B2/en
Application filed filed Critical
Publication of JP2006516361A publication Critical patent/JP2006516361A/ja
Publication of JP2006516361A5 publication Critical patent/JP2006516361A5/ja
Application granted granted Critical
Publication of JP4466645B2 publication Critical patent/JP4466645B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (3)

  1. ヒートシンクフランジと、
    前記ヒートシンクフランジに取り付けられている非セラミック系の電気的絶縁性材料の窓枠と、
    前記窓枠に取り付けられているリードと、を有する半導体パッケージであって、
    前記窓枠は、ファイバによって満たされ且つ金属被覆されたポリテトラフルオロエチレンのマトリクスによって形成されており、前記金属被覆はニッケル及び／又は金によってメッキされており、前記窓枠は前記フランジ及び前記リードにろう付け／はんだ付け／接着剤によってろう付けされていることを特徴とする半導体パッケージ。
  2. 前記窓枠は銅によって被覆されており、前記フランジ及び前記リードの少なくとも一方が前記窓枠の前記銅被覆の一部を含むことを特徴とする請求項１記載の半導体パッケージ。
  3. 前記窓枠は前記フランジに所定の融解温度を有する金／ゲルマニウムはんだによって結合され、前記半導体パッケージは前記金／ゲルマニウムはんだの前記所定の融解温度より低い融解温度を有する金／スズ混合物によって前記フランジに結合しているダイを更に有していることを特徴とする請求項１記載の半導体パッケージ。
JP2006500897A 2003-01-10 2004-01-09 非セラミック系窓枠を有する半導体パッケージ Expired - Fee Related JP4466645B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,834 US7298046B2 (en) 2003-01-10 2003-01-10 Semiconductor package having non-ceramic based window frame
PCT/US2004/000621 WO2004064120A2 (en) 2003-01-10 2004-01-09 Semiconductor package having non-ceramic based window frame

Publications (3)

Publication Number Publication Date
JP2006516361A JP2006516361A (ja) 2006-06-29
JP2006516361A5 true JP2006516361A5 (ja) 2007-09-20
JP4466645B2 JP4466645B2 (ja) 2010-05-26

Family

ID=32711185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006500897A Expired - Fee Related JP4466645B2 (ja) 2003-01-10 2004-01-09 非セラミック系窓枠を有する半導体パッケージ

Country Status (10)

Country Link
US (2) US7298046B2 (ja)
EP (1) EP1584101B1 (ja)
JP (1) JP4466645B2 (ja)
KR (1) KR101015749B1 (ja)
CN (1) CN101080800B (ja)
AT (1) ATE515053T1 (ja)
CA (1) CA2512845C (ja)
HK (1) HK1082591A1 (ja)
IL (1) IL169543A (ja)
WO (1) WO2004064120A2 (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070175660A1 (en) * 2006-01-27 2007-08-02 Yeung Betty H Warpage-reducing packaging design
ATE397647T1 (de) * 2006-03-06 2008-06-15 Umicore Ag & Co Kg Zusammensetzung zur befestigung von hochleistungshalbleiter
US20080016684A1 (en) * 2006-07-06 2008-01-24 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20080006204A1 (en) * 2006-07-06 2008-01-10 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US7961470B2 (en) * 2006-07-19 2011-06-14 Infineon Technologies Ag Power amplifier
US7952188B2 (en) * 2007-01-08 2011-05-31 Infineon Technologies Ag Semiconductor module with a dielectric layer including a fluorocarbon compound on a chip
CN101399237B (zh) * 2008-10-24 2010-06-02 江阴市赛英电子有限公司 全压接快速散热型陶瓷外壳
US20100139885A1 (en) * 2008-12-09 2010-06-10 Renewable Thermodynamics, Llc Sintered diamond heat exchanger apparatus
WO2011119891A2 (en) * 2010-03-25 2011-09-29 Anwar Abdul Mohammed High performance low cost open air cavity ceramic power packages for high temperature die attach processes
US8907467B2 (en) 2012-03-28 2014-12-09 Infineon Technologies Ag PCB based RF-power package window frame
JP6296687B2 (ja) 2012-04-27 2018-03-20 キヤノン株式会社 電子部品、電子モジュールおよびこれらの製造方法。
JP5885690B2 (ja) 2012-04-27 2016-03-15 キヤノン株式会社 電子部品および電子機器
EP2757582A1 (en) * 2013-01-17 2014-07-23 Nxp B.V. Packaged electrical components
US9879722B2 (en) * 2013-03-11 2018-01-30 Bell Helicopter Textron Inc. Low shear modulus transition shim for elastomeric bearing bonding in torsional applications
US20160071777A1 (en) * 2013-03-28 2016-03-10 Panasonic Intellectual Property Management Co., Ltd. Semiconductor package and semiconductor device
US10468399B2 (en) 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
US9629246B2 (en) 2015-07-28 2017-04-18 Infineon Technologies Ag PCB based semiconductor package having integrated electrical functionality
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US10225922B2 (en) 2016-02-18 2019-03-05 Cree, Inc. PCB based semiconductor package with impedance matching network elements integrated therein
US10332847B2 (en) * 2017-06-01 2019-06-25 Infineon Technologies Ag Semiconductor package with integrated harmonic termination feature
CN109037161A (zh) * 2018-06-15 2018-12-18 华为技术有限公司 一种法兰和半导体功率器件
WO2020004566A1 (ja) * 2018-06-28 2020-01-02 京セラ株式会社 基体および半導体装置
CN114582826A (zh) * 2020-11-30 2022-06-03 上海华为技术有限公司 一种封装结构、封装方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767839A (en) * 1971-06-04 1973-10-23 Wells Plastics Of California I Plastic micro-electronic packages
US4385342A (en) * 1980-05-12 1983-05-24 Sprague Electric Company Flat electrolytic capacitor
US4784974A (en) * 1982-08-05 1988-11-15 Olin Corporation Method of making a hermetically sealed semiconductor casing
JPS59214243A (ja) * 1983-05-20 1984-12-04 Nec Corp 半導体装置
US4725347A (en) * 1986-05-02 1988-02-16 The Dow Chemical Company Reinforced bipolar electrolytic cell frame
JPS63109104A (ja) * 1986-10-28 1988-05-13 Nippon Steel Corp チタンの積層鋼板の製造方法
US4930857A (en) * 1989-05-19 1990-06-05 At&T Bell Laboratories Hybrid package arrangement
US5045972A (en) * 1990-08-27 1991-09-03 The Standard Oil Company High thermal conductivity metal matrix composite
US5650592A (en) * 1993-04-05 1997-07-22 Olin Corporation Graphite composites for electronic packaging
WO1995015007A1 (en) * 1993-11-29 1995-06-01 Rogers Corporation Electronic chip carrier package and method of making thereof
JPH0831480A (ja) * 1994-07-15 1996-02-02 Fuji Denka:Kk 気密端子
US5686172A (en) * 1994-11-30 1997-11-11 Mitsubishi Gas Chemical Company, Inc. Metal-foil-clad composite ceramic board and process for the production thereof
DE69613645T2 (de) * 1995-03-02 2002-05-08 Circuit Components Inc Kostengünstiges hochleistungsgehäuse für mikrowellenschaltungen im 90 ghz-bereich mit bga ein/ausgangsformat und keramischer substrattechnologie
WO1996037915A1 (en) * 1995-05-26 1996-11-28 Sheldahl, Inc. Adherent film with low thermal impedance and high electrical impedance used in an electronic assembly with a heat sink
US6056186A (en) * 1996-06-25 2000-05-02 Brush Wellman Inc. Method for bonding a ceramic to a metal with a copper-containing shim
US5792984A (en) * 1996-07-01 1998-08-11 Cts Corporation Molded aluminum nitride packages
AU4902897A (en) * 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for improving reliability of thin circuit substrates by increasing the T of the substrate
JP3617232B2 (ja) * 1997-02-06 2005-02-02 住友電気工業株式会社 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ
JP3500268B2 (ja) * 1997-02-27 2004-02-23 京セラ株式会社 高周波用入出力端子ならびにそれを用いた高周波用半導体素子収納用パッケージ
US5926372A (en) * 1997-12-23 1999-07-20 Ford Global Technologies, Inc. Power block assembly and method of making same
US6211463B1 (en) * 1998-01-26 2001-04-03 Saint-Gobain Industrial Ceramics, Inc. Electronic circuit package with diamond film heat conductor
JP2000077462A (ja) * 1998-08-28 2000-03-14 Nec Eng Ltd Ｔａｂテープ貼付装置
US6114048A (en) * 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same
JP3684305B2 (ja) * 1998-09-17 2005-08-17 日本オプネクスト株式会社 半導体レーザ結合装置および半導体受光装置
JP3457901B2 (ja) * 1998-11-18 2003-10-20 京セラ株式会社 光半導体素子収納用パッケージ
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
JP3792445B2 (ja) * 1999-03-30 2006-07-05 日本特殊陶業株式会社 コンデンサ付属配線基板
US6261868B1 (en) * 1999-04-02 2001-07-17 Motorola, Inc. Semiconductor component and method for manufacturing the semiconductor component
US6373717B1 (en) * 1999-07-02 2002-04-16 International Business Machines Corporation Electronic package with high density interconnect layer
US6462413B1 (en) * 1999-07-22 2002-10-08 Polese Company, Inc. LDMOS transistor heatsink package assembly and manufacturing method
US6414389B1 (en) * 2000-01-28 2002-07-02 Ericsson Inc. Alignment pedestals in an LDMOS power package
JP2002252299A (ja) * 2001-02-26 2002-09-06 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2002368168A (ja) * 2001-06-13 2002-12-20 Hitachi Ltd 半導体装置用複合部材、それを用いた絶縁型半導体装置、又は非絶縁型半導体装置
US6500529B1 (en) * 2001-09-14 2002-12-31 Tonoga, Ltd. Low signal loss bonding ply for multilayer circuit boards
US20030131476A1 (en) * 2001-09-28 2003-07-17 Vlad Ocher Heat conduits and terminal radiator for microcircuit packaging and manufacturing process
AT5972U1 (de) * 2002-03-22 2003-02-25 Plansee Ag Package mit substrat hoher wärmeleitfähigkeit
US6671449B1 (en) * 2002-06-13 2003-12-30 Agilent Technologies, Inc. Optical packaging assembly including a hermetically sealed optical device housing and method of making the same
US20040046247A1 (en) * 2002-09-09 2004-03-11 Olin Corporation, A Corporation Of The Commonwealth Of Virginia Hermetic semiconductor package
US6727117B1 (en) * 2002-11-07 2004-04-27 Kyocera America, Inc. Semiconductor substrate having copper/diamond composite material and method of making same
US7105931B2 (en) * 2003-01-07 2006-09-12 Abbas Ismail Attarwala Electronic package and method
SG157957A1 (en) * 2003-01-29 2010-01-29 Interplex Qlp Inc Package for integrated circuit die
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US6982483B2 (en) * 2003-05-30 2006-01-03 Freescale Semiconductor, Inc. High impedance radio frequency power plastic package
US20040246682A1 (en) * 2003-06-09 2004-12-09 Sumitomo Metal (Smi) Eectronics Devices Inc. Apparatus and package for high frequency usages and their manufacturing method

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