JP2006507667A - 材料を除去するためのシステムおよび方法 - Google Patents

材料を除去するためのシステムおよび方法 Download PDF

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Publication number
JP2006507667A
JP2006507667A JP2004537941A JP2004537941A JP2006507667A JP 2006507667 A JP2006507667 A JP 2006507667A JP 2004537941 A JP2004537941 A JP 2004537941A JP 2004537941 A JP2004537941 A JP 2004537941A JP 2006507667 A JP2006507667 A JP 2006507667A
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Japan
Prior art keywords
plasma
gas
crust
remove
photoresist
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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English (en)
Japanese (ja)
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JP2006507667A5 (enExample
Inventor
ジョージ レネ
ゼイジャック ジョン
ジェイ．デビン ダニエル
ランフト クレイグ
カダバニッチ アンドレアス
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マットソン テクノロジイ インコーポレイテッド
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Publication of JP2006507667A publication Critical patent/JP2006507667A/ja
Publication of JP2006507667A5 publication Critical patent/JP2006507667A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004537941A 2002-09-18 2003-09-16 材料を除去するためのシステムおよび方法 Withdrawn JP2006507667A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41206702P 2002-09-18 2002-09-18
PCT/US2003/029275 WO2004027826A2 (en) 2002-09-18 2003-09-16 System and method for removing material

Publications (2)

Publication Number Publication Date
JP2006507667A true JP2006507667A (ja) 2006-03-02
JP2006507667A5 JP2006507667A5 (enExample) 2006-11-02

Family

ID=32030795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004537941A Withdrawn JP2006507667A (ja) 2002-09-18 2003-09-16 材料を除去するためのシステムおよび方法

Country Status (8)

Country Link
US (1) US20040084150A1 (enExample)
JP (1) JP2006507667A (enExample)
KR (1) KR20050044806A (enExample)
CN (1) CN1682353A (enExample)
AU (1) AU2003270735A1 (enExample)
DE (1) DE10393277T5 (enExample)
TW (1) TW200414279A (enExample)
WO (1) WO2004027826A2 (enExample)

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* Cited by examiner, † Cited by third party
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JP2011243595A (ja) * 2010-05-13 2011-12-01 Sharp Corp プラズマアッシング方法及びプラズマアッシング装置

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US7605063B2 (en) 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
US20080009127A1 (en) * 2006-07-04 2008-01-10 Hynix Semiconductor Inc. Method of removing photoresist
KR100780660B1 (ko) * 2006-07-04 2007-11-30 주식회사 하이닉스반도체 높은 도즈의 이온주입배리어로 사용된 감광막의 스트립방법
US20080102644A1 (en) * 2006-10-31 2008-05-01 Novellus Systems, Inc. Methods for removing photoresist from a semiconductor substrate
US8093157B2 (en) * 2007-07-03 2012-01-10 Mattson Technology, Inc. Advanced processing technique and system for preserving tungsten in a device structure
US7723240B2 (en) * 2008-05-15 2010-05-25 Macronix International Co., Ltd. Methods of low temperature oxidation
WO2011047179A2 (en) * 2009-10-14 2011-04-21 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Plasma ashing compounds and methods of use
KR20130141550A (ko) * 2010-10-27 2013-12-26 어플라이드 머티어리얼스, 인코포레이티드 포토레지스트 선폭 거칠기를 조절하기 위한 방법들 및 장치
US9805912B2 (en) * 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
US20130288469A1 (en) * 2012-04-27 2013-10-31 Applied Materials, Inc. Methods and apparatus for implanting a dopant material
US10256079B2 (en) * 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
CN104576309B (zh) * 2013-10-11 2018-02-27 中芯国际集成电路制造(上海)有限公司 从多芯片封装结构中获取底层芯片的方法
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US20150357203A1 (en) * 2014-06-05 2015-12-10 Macronix International Co., Ltd. Patterning method and patterning apparatus
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10599039B2 (en) 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10403492B1 (en) * 2018-12-11 2019-09-03 Mattson Technology, Inc. Integration of materials removal and surface treatment in semiconductor device fabrication
CN109698126A (zh) * 2018-12-24 2019-04-30 上海华力集成电路制造有限公司 改善硅针孔缺陷的方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243595A (ja) * 2010-05-13 2011-12-01 Sharp Corp プラズマアッシング方法及びプラズマアッシング装置

Also Published As

Publication number Publication date
AU2003270735A1 (en) 2004-04-08
TW200414279A (en) 2004-08-01
US20040084150A1 (en) 2004-05-06
CN1682353A (zh) 2005-10-12
AU2003270735A8 (en) 2004-04-08
WO2004027826A2 (en) 2004-04-01
WO2004027826A3 (en) 2005-01-20
KR20050044806A (ko) 2005-05-12
DE10393277T5 (de) 2005-09-01

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