JP2006310754A - ナノ複合体の誘電膜、その誘電膜を有するキャパシタ及びその製造方法 - Google Patents
ナノ複合体の誘電膜、その誘電膜を有するキャパシタ及びその製造方法 Download PDFInfo
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- JP2006310754A JP2006310754A JP2006000062A JP2006000062A JP2006310754A JP 2006310754 A JP2006310754 A JP 2006310754A JP 2006000062 A JP2006000062 A JP 2006000062A JP 2006000062 A JP2006000062 A JP 2006000062A JP 2006310754 A JP2006310754 A JP 2006310754A
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- dielectric film
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- capacitor
- dielectric
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- 239000003990 capacitor Substances 0.000 title claims abstract description 87
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- 230000001590 oxidative effect Effects 0.000 claims description 50
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 40
- 238000000231 atomic layer deposition Methods 0.000 claims description 33
- 239000003989 dielectric material Substances 0.000 claims description 25
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
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- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
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- 238000010586 diagram Methods 0.000 description 7
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- 229910010413 TiO 2 Inorganic materials 0.000 description 4
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- 229910052746 lanthanum Inorganic materials 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
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- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- Chemical Kinetics & Catalysis (AREA)
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Applications Claiming Priority (1)
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KR1020050036529A KR100716652B1 (ko) | 2005-04-30 | 2005-04-30 | 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법 |
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JP (1) | JP2006310754A (ko) |
KR (1) | KR100716652B1 (ko) |
CN (1) | CN100481461C (ko) |
DE (1) | DE102005062964A1 (ko) |
TW (1) | TWI285942B (ko) |
Cited By (11)
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JP2008244428A (ja) * | 2007-03-23 | 2008-10-09 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
JP2009076542A (ja) * | 2007-09-19 | 2009-04-09 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
US7968472B2 (en) | 2008-08-11 | 2011-06-28 | Tokyo Electron Limited | Film forming method and film forming apparatus |
JP2012009823A (ja) * | 2010-05-28 | 2012-01-12 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
KR101234910B1 (ko) * | 2008-10-15 | 2013-02-19 | 마이크론 테크놀로지, 인크. | 커패시터, 유전 구조, 및 유전 구조 형성 방법 |
CN103247622A (zh) * | 2012-02-10 | 2013-08-14 | 南亚科技股份有限公司 | 含硅掺杂氧化锆的电容介电层及其电容结构 |
WO2013150920A1 (ja) * | 2012-04-05 | 2013-10-10 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び基板処理システム |
US8735304B2 (en) | 2011-03-25 | 2014-05-27 | Elpida Memory Inc. | Film forming method, film forming apparatus, and storage medium |
US9466478B2 (en) | 2013-03-29 | 2016-10-11 | Tokyo Electron Limited | Film forming method and film forming apparatus |
WO2022038450A1 (ja) * | 2020-08-19 | 2022-02-24 | 株式会社半導体エネルギー研究所 | 金属酸化物の製造方法 |
WO2022049459A1 (ja) * | 2020-09-07 | 2022-03-10 | 株式会社半導体エネルギー研究所 | 金属酸化物膜、半導体装置、およびその作製方法 |
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KR20080093624A (ko) | 2007-04-17 | 2008-10-22 | 삼성전자주식회사 | 반도체 소자용 다층 유전막 및 그 제조 방법 |
FI122009B (fi) * | 2007-06-08 | 2011-07-15 | Teknologian Tutkimuskeskus Vtt | Nanopartikkeleihin perustuvat rakenteet ja menetelmä niiden valmistamiseksi |
KR20100072021A (ko) * | 2007-09-14 | 2010-06-29 | 시그마-알드리치컴퍼니 | 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 |
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US6420279B1 (en) * | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
US6875678B2 (en) * | 2002-09-10 | 2005-04-05 | Samsung Electronics Co., Ltd. | Post thermal treatment methods of forming high dielectric layers in integrated circuit devices |
KR100555543B1 (ko) * | 2003-06-24 | 2006-03-03 | 삼성전자주식회사 | 원자층 증착법에 의한 고유전막 형성 방법 및 그고유전막을 갖는 커패시터의 제조 방법 |
KR20050002027A (ko) * | 2003-06-30 | 2005-01-07 | 주식회사 하이닉스반도체 | 이중 유전막을 구비하는 캐패시터 및 그 제조 방법 |
KR20050029427A (ko) * | 2003-09-22 | 2005-03-28 | 삼성전자주식회사 | 확산 방지막을 갖는 반도체 커패시터의 제조방법 |
-
2005
- 2005-04-30 KR KR1020050036529A patent/KR100716652B1/ko not_active IP Right Cessation
- 2005-12-28 DE DE102005062964A patent/DE102005062964A1/de not_active Ceased
- 2005-12-28 TW TW094146965A patent/TWI285942B/zh not_active IP Right Cessation
- 2005-12-30 CN CNB2005100975303A patent/CN100481461C/zh not_active Expired - Fee Related
-
2006
- 2006-01-04 JP JP2006000062A patent/JP2006310754A/ja active Pending
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JP2008244428A (ja) * | 2007-03-23 | 2008-10-09 | Hynix Semiconductor Inc | 半導体素子の製造方法 |
JP2009076542A (ja) * | 2007-09-19 | 2009-04-09 | Tokyo Electron Ltd | 成膜方法および成膜装置 |
US7968472B2 (en) | 2008-08-11 | 2011-06-28 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US8336487B2 (en) | 2008-08-11 | 2012-12-25 | Tokyo Electron Limited | Film forming apparatus |
US8603877B2 (en) | 2008-10-15 | 2013-12-10 | Micron Technology, Inc. | Methods of forming dielectric material-containing structures |
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US8389421B2 (en) | 2010-05-28 | 2013-03-05 | Tokyo Electron Limited | Film formation method and film formation apparatus |
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CN103247622A (zh) * | 2012-02-10 | 2013-08-14 | 南亚科技股份有限公司 | 含硅掺杂氧化锆的电容介电层及其电容结构 |
WO2013150920A1 (ja) * | 2012-04-05 | 2013-10-10 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び基板処理システム |
US9466478B2 (en) | 2013-03-29 | 2016-10-11 | Tokyo Electron Limited | Film forming method and film forming apparatus |
WO2022038450A1 (ja) * | 2020-08-19 | 2022-02-24 | 株式会社半導体エネルギー研究所 | 金属酸化物の製造方法 |
WO2022049459A1 (ja) * | 2020-09-07 | 2022-03-10 | 株式会社半導体エネルギー研究所 | 金属酸化物膜、半導体装置、およびその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102005062964A1 (de) | 2006-11-02 |
CN100481461C (zh) | 2009-04-22 |
KR20060113249A (ko) | 2006-11-02 |
KR100716652B1 (ko) | 2007-05-09 |
TW200638514A (en) | 2006-11-01 |
CN1855500A (zh) | 2006-11-01 |
TWI285942B (en) | 2007-08-21 |
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