TWI285942B - Capacitor with nano-composite dielectric structure and method for fabricating the same - Google Patents

Abstract

A capacitor with a nano-composite dielectric structure and a method for fabricating the same are provided. The capacitor includes: a lower electrode; a nano-composite dielectric structure; and an upper electrode. The nano-composite dielectric structure is obtained by mixing an HfO2 layer and a dielectric layer having a dielectric constant equal to or greater than that of the HfO2 layer in the form of a nano-composition. The dielectric layer includes a material selected from a group consisting of ZrO2, La2O3 and Ta2O5, each having a dielectric constant in a range of approximately 25 to approximately 30 and a band gap energy level ranging from approximately 4.3 to approximately 7.8.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a capacitor having a nanocomposite dielectric structure and a A method of manufacturing the capacitor. [Prior Art] Since the large-scale integration of a memory product is accelerated by a miniaturization manufacturing method (micr ο nizati ο η) in semiconductor technology, the size of a unit cell has been rapidly reduced and A low operating voltage can be achieved. However, even if the cell size has been reduced, the capacitance required to operate a memory device should be greater than 25 pF per cell to prevent soft error events and reduce update time. Therefore, even if a three-dimensional storage node having a large surface area of the hemispherical electrode surface has been implemented, the height of the NO capacitor for a dynamic random access memory (DRAM) using a tantalum nitride layer (ShN4) has been made. It is also continuously increasing. The tantalum nitride layer is usually made of dicholorosilane (DCS). Forming. | Using a dielectric material with a high dielectric constant K or a three-dimensional storage node (eg, a cylindrical or concave storage node) because it ensures the limitation of a NO capacitor with a sufficient level of capacitance required for a DRAM of 25 6M or more. To overcome this capacitance limitation, examples of high dielectric constant K materials are molybdenum oxide (Ta2〇5), bismuth oxide (AhCh), and oxidation (Hf〇2). However, Ta2Ch has a poor leakage current characteristic. Al2〇3 with an electric constant 値 of 9 has a good leakage current characteristic, and still obtains a capacitance of a desired level due to a low dielectric constant 。. Hf〇2 can obtain the capacitance because of having a high dielectric constant; , Hf〇2 has a low-intensity collapse voltage. Therefore ' 1285942 long * j *

Hf〇2 is susceptible to electrical shock, thus reducing the durability of the capacitor. Therefore, a stacked structure including Hf 〇 2 and Al 2 〇 3 (i.e., 'dual dielectric structure') has been provided. Fig. 1 is a cross-sectional view showing a capacitor having a conventional dielectric structure of Hf 〇 2 / Al 2 〇 3. A dielectric structure 12 is formed between the lower electrode 1 1 and an upper electrode 13 and has a double dielectric structure, wherein the double dielectric structure is formed by stacking an Al 2 〇 3 layer 12A and an Hf Cb layer 12 B obtain. Since Al2〇3 has a low dielectric constant, Ah3 is fabricated in a nano-8 0 m device in the form of a nanocomposite to reduce leakage current. Since Al2〇3 can obtain a predetermined level of leakage current even when Al2〇3 is formed thinly, good electrical characteristics and a large amount of production can be achieved in a device of up to 80 nm. However, since a concave capacitor in a DRAM requires an effective oxide thickness which has been reduced to a large extent, it is generally difficult to apply Al2?3 to the concave capacitor. Therefore, a dielectric structure (including: a mixture of Hf〇2 and Al2〇3 mixed at a predetermined ratio) (that is, a dielectric structure formed by nanocomposite of Hf〇2_Al2〇3) has been used. As a dielectric layer of a capacitor formed by a concave structure. The following dielectric structure is referred to as "HfAlO nanocomposite dielectric layer". Despite this advantage, the HfAlO nanocomposite dielectric layer has a low dielectric constant in the range of 13 to 15. Fig. 2 is a graph showing the dielectric constant 値 of a conventional dielectric material including AhCh, Hf〇2, and nano composite material HfA1〇. As shown, Hf〇2 and Al2〇3 have dielectric constants of 25 and 9, respectively. On the other hand, a HfAlO nanocomposite dielectric layer in which Hf〇2 and illusion (1)3 1285942 (“ is mixed in a nanocomposite form with a dielectric constant ranging from n to 15′′ where H fO2 and Al2 The 〇3 series is mixed in a nanocomposite manner. In particular, the mixing ratio of Hf to Αι in the dielectric layer of the HfA10 nanocomposite is about 1:1. Because the HfA 10 nanocomposite dielectric is dielectric The layer has a lower dielectric constant than the 〇2, so the Hf 〇 2 of the HfA10 nanocomposite dielectric layer can have a reduced dielectric constant 値. The result 'it is difficult to ensure that it is available in the next _ 8 〇 nm device H FA 10 nanocomposite dielectric layer having a predetermined high dielectric constant. • Since the H fA 10 nanocomposite dielectric layer includes Ah 〇 3 having a dielectric constant of about 9, the HfAlO nanocomposite The material dielectric layer has a lower dielectric constant than the Hf 〇 2 dielectric layer. Therefore, it is generally required to use a dielectric layer that can be applied to all forms (including concave) capacitors and obtain good leakage current characteristics and almost A high dielectric constant 相同 similar to the dielectric constant of HfCh. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a capacitor having a dielectric structure of a nanocomposite material and a method for fabricating the capacitor, wherein the nanocomposite dielectric structure has good leakage current The characteristics can be applied to different types of capacitors and obtain a high dielectric constant 値. According to one aspect of the present invention, a dielectric structure of a capacitor is provided, and the dielectric structure includes: a oxidized (Hf 〇 2) a layer, and a dielectric layer mainly composed of a material having a dielectric constant substantially identical to the Hf〇2 layer, wherein the dielectric structure comprises a nano composite dielectric structure, the nano composite material The electrical structure is obtained by mixing the Hf〇2 layer with the dielectric layer in the form of a nanocomposite. 1285942 < According to another aspect of the present invention, a dielectric structure for manufacturing an electricity is provided. The method comprises the steps of: forming a layer of nano-composite layer by means of an atomic layer deposition (ALD) method, by repeatedly applying a Y-time and Y-order oxidation (Hf〇2) deposition period and Dielectric a product cycle in which a dielectric layer of (Hf〇2) layer is mixed by oxidation, and an annealing treatment is performed to densify the dielectric structure of the nano material. According to another aspect of the present invention, Providing a capacitor comprising: a lower electrode; a nanocomposite dielectric structure formed on the lower electrode and comprising an oxidized (HfCh) layer and a dielectric constant having substantially the same HfCh layer An electrical layer, wherein the Hf〇2 layer and the dielectric are mixed in a nanocomposite form; and an upper electrode formed on the dielectric material dielectric structure. According to another aspect of the present invention, a manufacturing Capacitor method 'This method includes: forming a lower electrode; forming a nanocomposite structure 'on the lower electrode, performing an atomic layer deposition (ALD) square φ to obtain 'the nanocomposite dielectric structure by And obtained in a nanocomposite form of a mixed-oxidation (Hf〇2) layer and a dielectric layer having substantially the same dielectric constant; an annealing treatment is performed to densely bond the nano composite dielectric structure And forming an upper electrode on the already - the nano composite dielectric structure. The above and other objects and features of the present invention will become more apparent from the description of the preferred embodiments illustrated herein. [Embodiment] The exemplary container material according to the present invention will be described in detail with reference to the Hf〇2 of the exemplary container material layer and a composite capacitor in the layered dielectric method. A pair of capacitors having a dielectric structure of a nanocomposite and a method for fabricating the same are disclosed. An exemplary embodiment of the present invention suggests a dielectric structure having a high dielectric constant (approximately a dielectric hang of Hf 〇 2) with an Al2 〇 3 _ permanent leakage current characteristic 'to ensure greater than about 2 ) And can be applied to various types of capacitors. These advantages allow the dielectric layer to be applied to a highly integrated semiconductor device having a size of less than about 7 nm. Table 3 is a schematic illustration of a nanocomposite material dielectric structure in accordance with a particular embodiment of the present invention. According to a particular embodiment of the invention, the nanocomposite dielectric structure is not a simple stacked structure having a first dielectric layer and a second dielectric layer, but a hybrid in the form of a nanocomposite. The structure of the dielectric layer and the second dielectric layer. As shown, the nanocomposite dielectric structure includes a first dielectric layer M1〇 having a first atom, and a second dielectric layer m2〇 having a second atom M2, wherein the first dielectric layer Μι0 and the second dielectric layer m2 are mixed in the form of a nanocomposite. The nano composite dielectric structure is not only a combination of the first dielectric layer ΜιΟ and the second dielectric layer m2〇, but has the characteristics of a mw2 nanocomposite dielectric material, wherein the ΜιΜ2〇 The nano composite dielectric material is an oxide-based material including a first atom M1 and a second atom M2. The first atom and the second atom of the M1M2O nanocomposite dielectric structure are selected from atoms which provide a constant greater than the dielectric layer of the HfAlO nanocomposite. That is, the MlM2 nanocomposite dielectric layer has a dielectric constant of at least about 20. For example, the first atom Μι includes Hf, and the second atom M2 includes a material selected from the group consisting of pins (Zr), lanthanum (La), and giant (Ta) 1285942 f'*. Thus, the MiM2 nanocomposite dielectric layer can be a layer of HfZr(R), HfLaO or iifTaO, and the nanocomposite dielectric layers have a size greater than about 13-15 of the HfAlO nanocomposite dielectric layer. Dielectric constant. Table 1 below shows the dielectric constant, bandgap energy 値, and conduction band compensation (CB〇)値 depending on the type of dielectric material. Table 1 Dielectric Properties of Dielectric Materials Band Gap Energy (Eg, eV) CB〇(eV) for Si SiCb 3.9 8.9 3.5 S13N4 7 5.1 2.4 AI2O3 9 8.7 2.8 Y2O3 15 5.6 2.3 Zr〇2 25 7.8 1.4 Hf〇2 25 5.7 1.5 Ta2〇5 26 4.5 0.3 La2〇3 30 4.3 2.3 T1O2 80 3.5 0.0

In Table 1, 'the CBCT system for Si represents an indicator of the difficulty of electron extraction. The lower the CBO, the better the leakage current characteristics. Similarly, when the band gap energy is high, the leakage current characteristic is better. If the dielectric layer has an amorphous structure at room temperature, it is advantageous in terms of conduction path, thereby causing a decrease in leakage current level. However, the dielectric layer should have a crystalline structure to have a high dielectric constant. That is, the dielectric constant and the amorphous state have a trade-off relationship. As shown in Table 1, since S i 0 2, S i 3 N 4, A12〇3, and Y 2〇3 have a dielectric constant of less than about 20, it is difficult to obtain a highly integrated -10- 1285942 for these dielectric materials. { * t 1 Capacitance of the required level of a capacitor in a semiconductor device. Since Zr 〇 2, Hf 〇 2, Ta 2 〇 5, La 2 Ch and Ti 〇 2 have dielectric constants greater than about 20, these dielectric constants allow the desired capacitance to be obtained. However, when the dielectric material of the latter is used alone or in combination, loss of dielectric characteristics, reduction in leakage current characteristics, and application of a capacitor structure are limited. Accordingly, it is proposed in an exemplary embodiment of the invention to use an amorphous nanocomposite dielectric layer that achieves the high level capacitance required for highly integrated semiconductor device capacitors and can be applied to various capacitor structures without Loss of dielectric properties and leakage current characteristics. According to Table 1, the nanocomposite dielectric layer can be one of the dielectric layers of HfZrO, HfLaO, and HfTaO nanocomposites. These nanocomposite dielectric layers have a dielectric constant higher than that of a HfAlO nanocomposite dielectric layer. The dielectric layers of the above-mentioned HfZrO, HfLaO and HfTaO nanocomposites collectively include Hf and are obtained by mixing Zr〇2, La2〇3 and Ta2〇5 with HfCh in the form of nanocomposite. The dielectric constants of Hf 〇 2, Zr 〇 2, La 2 Ch and Ta 2 〇 5 are approximately 25, 25, 30 and 26, respectively. Therefore, the above dielectric layer of the nanocomposite material has a dielectric constant of at least about 20 without reducing the dielectric constant of Hf 〇 2 . In contrast, a HfAlO nanocomposite dielectric layer is obtained in a nanocomposite form by mixing Hf〇2 having a dielectric constant of about 20 with ah03 having a dielectric constant of about 9. . Therefore, the dielectric layer of the HfAlO nanocomposite has a dielectric constant lower than Hf〇2, thereby promoting a decrease in the dielectric constant of Hf〇2. As shown in Table 1, Ti 2 having a high dielectric constant of about 80 was mixed with Hf 〇 2 to form a nanocomposite dielectric layer. However, Ti〇2 has a lower band gap energy (Eg) than other dielectric materials. Therefore, using Ti〇2 to form a dielectric layer of -11-1285942 κ*I k nanocomposite, it is almost impossible to obtain an effective oxide thickness of less than about 1 〇A, which is usually required for a sub-70 nm device, and Limitations result in a reduction in the electrical characteristics of the capacitor. The first dielectric layer including the first atom M! and the first dielectric layer M2 including the second atom M2 are formed by using an atomic layer deposition (ald) method so that the Μ 1 Μ 20 nm composite The material dielectric layer is formed not in a stacked structure but in a structure in which the first dielectric layer and the second dielectric layer μ2 are mixed. The following describes a method for depositing an exemplary nanocomposite dielectric layer (eg, HfZrO, HfLaO, and HfTaO nanocomposite dielectric layers) and these nanocomposites in accordance with an exemplary embodiment of the present invention. The structure of the dielectric layer. Figure 4 is a graph depicting an ALD method for depositing a HfZrO nanocomposite dielectric layer in a continuous supply of associated gases in accordance with a first embodiment of the present invention. According to the ALD method, a source gas is supplied to a reaction chamber to chemically absorb a single layer of gas source molecules on the surface of a substrate. The physical absorption source molecules are removed to the outside of the reaction chamber. Then, a reactive gas is supplied to the source molecules of the above single layer. Since a chemical reaction occurs between the reaction gas and the molecules of the source, a predetermined atomic layer is deposited. The unreacted reaction gas is purged to the outside of the reaction chamber. These continuous operations constitute one unit period of the ALD method. The ALD process utilizes a surface reaction mechanism that allows for the formation of a stable and uniform thin layer. Since the source gas and the reaction gas are separately supplied and removed in a sequential order, the ALD method can be more effectively prevented by a gas phase reaction than a chemical vapor deposition (CVD):S]-12-1285942 ... The production of particles. The above unit period of the ALD method for depositing the dielectric layer of the HfZrO nanocomposite is as follows: [(Hf source/clearing/oxidizing agent exposure/clearing) y (Zr source/clearing/oxidizing agent exposure/clearing) z]n. Hereinafter, this unit period is referred to as a first unit period. The Hf source is used to supply the Hf source to generate a pulse of Hf 〇 2 and the Zr source is used to supply the h source to generate a pulse of Ζι*〇2. The subscript symbols 'ζ' and Υ indicate (Hf source/clear/oxidant exposure/clearance), the number of cycles, the number of (Zr source/clear/oxidant exposure/clearing) cycles, and the thickness of the HfZrO dielectric layer. The number of cycles. In more detail of the first unit period, the (Hf source/clearing/oxidant exposure/clearing) period is referred to as an Hf〇2 deposition period, which includes supplying the Hf source; clearing the physical absorption Hf source; Exposing the Hf source to an oxidant; and removing the unreacted Hf source and the oxidant, and repeating the Hf〇2 deposition cycle y times. The (Z r source/clear/oxidant exposure/clearing) cycle is referred to as a Zr 0 2 deposition cycle, which includes: supplying the Zr source; removing the unreacted Zr source; exposing the Zr | source to an oxidant; The unreacted Zr source and the oxidant. The Z r 〇 2 deposition cycle was repeated z times. The Hf 2 layer and a ZrCh layer having a predetermined thickness are deposited by repeating the Hf 〇 2 deposition period and the Zr 〇 2 deposition period by y and z times, respectively. A combined deposition cycle comprising the HfCh deposition cycle and the Zr〇2 deposition cycle is repeated n times to determine the overall thickness of the HfZrO nanocomposite dielectric layer. Regarding Fig. 4, an example of a dielectric layer of a HfZrO nanocomposite according to a first embodiment of the present invention will be described below. It should be noted that the unit period of (Hf/N2/〇3/N2) is referred to as an HfCh deposition 1285942 / '. * Cycle and repetition y times. Here, Hf, N2, and 〇3 are each an Hf source, a purge gas, and a oxidizing gas. It should also be noted that the unit period of (Zr/N2/〇3/N2) is referred to as a 'Zr〇2iii product period and is repeated z times. Here, Zr, N2, and 〇3 are respectively a Zr source, a purge gas, and an oxidizing gas. Maintain a pressure of about 0. 1 Torr to about 10 Torr and about 100. The Hf〇2 deposition cycle and the Zr〇2 deposition cycle are carried out in a reaction chamber to a substrate temperature of about 450 °C. As for the Hf〇2 deposition cycle, an Hf source selected from the group consisting of HfCl4, Hf(N〇3)4, φHf(NCH2C2H5)4, and Hf(OC2H〇4 is evaporated in an evaporator. Then, The Hf source is supplied to the reaction chamber maintained under the above conditions for about 0.1 second to about 3 seconds to absorb the Hf source on the substrate. The N 2 gas is supplied to the reaction chamber for about 1 second to The unreacted Hf source is purged to the outside of the reaction chamber for about 5 seconds. The helium 3 gas is supplied to the reaction chamber for about 0.1 second to about 3 seconds to cause a reaction between the absorbed Hf source and the helium 3 gas. And forming an Hf〇2 layer. The N2 gas is again supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove the unreacted Ch gas and the by-product of the φ reaction. The Hf〇2 deposition cycle is repeated y Next, a layer of HfO 2 having a predetermined thickness of about 1 A to about 5 A is deposited. In addition to the 03 gas, H20 vapor may be used as the oxidizing agent. Similarly, in addition to the above N 2 gas, an image such as argon may be used. The inert gas of Ar) is used as the purge gas. As for the Zr〇2 deposition cycle, Zf(N(CH3)(C2H5))4(TEMAZ) supply of the Zr source will be used. The reaction chamber is maintained under the above conditions for about 0.1 seconds to about 3 seconds, in order to absorb the TEMAZ square on the substrate the N2 gas is supplied to the reaction chamber for about seconds to about 5 seconds 〇.1 -14-

V S 1285942, 1 to remove the unreacted TEMAZ to the outside of the reaction chamber. Then, the helium 3 gas is supplied to the reaction chamber for about 0.1 second to about 3 seconds to cause a reaction between the absorption TEMAZ and the helium 3 gas to further deposit a layer of Zr〇2. The unreacted helium 3 gas and by-products are purged to the outside of the reaction chamber by supplying the N 2 gas to the reaction chamber for about 1 second to about 5 seconds. The Ζ::2 deposition cycle is repeated z times to deposit a ZrO 2 layer of a predetermined thickness of about 1 A to about 5 Å. In addition to the above TEMAZ, Zr(N(C2H5)2)4 (TDEAZ) can also be used. Similarly, in addition to the ruthenium 3 gas, H20 vapor may be used as the oxidant, and in addition to the N2 gas, an inert gas such as argon may be used as the purge gas. Fig. 5 is a view showing the structure of a dielectric layer of a HfZrO nanocomposite deposited in accordance with a first embodiment of the present invention. As described, the HfZrO nanocomposite dielectric layer does not have a stacked structure having the Hf〇2 layer and the Zr〇2 layer, but a Hf〇2 layer and the ZrCh layer in a nanocomposite form. The specific structure is formed. Since the ALD method is used to deposit the Hf〇2 layer and the Zr〇2 layer, the upper nanocomposite structure is obtained. Specifically, the number of H f 〇 2 deposition cycles represented by y, and the number of Zr 〇 2 deposition cycles indicated by 'z1 are controlled to deposit a HfCh layer and a Zr 〇 2 layer of about 1 to about 5 A thick. Each layer. This thickness is obtained when the Hf〇2 layer and each of the Zr〇2 layers are deposited discontinuously. - If the thickness is greater than about 5 A, the Hf〇2 layer and the Zr〇2_ layer are successively deposited, resulting in a stacked structure. There are some conditions for obtaining the HfZrO nanocomposite dielectric layer. First, the thickness of the HfCh layer and the ZrCh layer should be in the range of about 1 a to about 5 A. As described above, 'if the thickness is greater than about 5 A, the Hf〇2 layer and each of the Zr〇2 layers are successively deposited in a specific degree of -15-1285942 ^*I > and thus, may result in This stacked structure may even result in a reduction in characteristics. Second, the number of times of the Hf〇2 deposition cycle (ie, y,) and the number of times of the ZrCh deposition cycle (ie, ζ·) should be set to less than about 1〇 to form a nanocomposite structure. . That is, the ratio of y · 对 · ζ · is between about 1: 丨〇 to about 丨〇 : ! If the number of the Hf〇2 deposition period and each of the ZrCh deposition periods is less than about 1 〇, the H f〇2 layer and the Zr〇2 layer are mixed in the form of a nanocomposite, thereby causing The HfZrO nanocomposite dielectric layer, wherein the HfZrO nanocomposite dielectric layer is not the HfCh layer and is not the Zr〇2 layer. Similarly, if the ratio of y · to ' z ' is set between about 1:1 〇 and about 10:1, then each of the HfCh layer and the Zr〇2 layer has about 1 A to about 5 A. The thickness. The HfZrO nanocomposite dielectric layer obtained by the ALD method carried out under the above conditions has the following characteristics: increased crystallization temperature and heat resistance characteristics, and improved dielectric properties. In particular, the improvement in dielectric properties φ can be demonstrated by the fact that the dielectric constant of the HfZrO nanocomposite dielectric layer is measured to have a number 约 of about 25. Figure 6 is a graph showing the comparison of the dielectric constant between the dielectric layer of the HfZr(R) nanocomposite and other dielectric materials produced in accordance with the first embodiment of the present invention. • The dielectric constants of 'Hf〇2 and Zr〇2 as shown are approximately 25. The HfZrO nanocomposite dielectric layer has a dielectric constant of about 25. This result indicates that the HfZrO nanocomposite dielectric layer has a dielectric constant which is almost the same as the valence 〇2. Therefore, the dielectric layer of the HfZrO nanocomposite can be obtained without 1285942 h < I 1 impairing the dielectric constant of Hf 〇 2 . As a result, the HfZr0 nanocomposite dielectric layer has good leakage current characteristics. After deposition of the dielectric layer of the HfZrO nanocomposite, an annealing treatment is performed to improve the organic material contained in the dielectric layer of the HfZrO nanocomposite and to densify the dielectric layer of the HfZrO nanocomposite. The annealing process is particularly from about 300 ° C to about 5 Torr in a 03 environment. The armpit is implemented for about 30 seconds to about 120 seconds. Figure 7 is a graph showing an ALD method for depositing a HfLaO nanocomposite dielectric layer in a continuous supply of associated gas φ bodies in accordance with a second embodiment of the present invention. The unit period of the ALD method for depositing the dielectric layer of the HfLaO nanocomposite is as follows: [(Hf source/clearing/oxidant exposure/clearing) y (La source/clearing/oxidant exposure/clearing) ζ] η. This unit period is referred to as a second unit period. The Hf source is used to supply the Hf source to generate a pulse of Hf 〇 2, and the La source is used to supply the La source to generate a pulse of La 〇 3 . The subscript symbol and Y indicate the number of cycles (Hf source/clearing/oxidizing agent exposure/clearing), the number of (La source/clearing/oxidizing agent exposure/clearing) cycles, and the period determining the thickness of the HfLaO dielectric layer, respectively. frequency. In more detail of the second unit period, the (Hf source/clear/oxidant exposure/clearing) period is referred to as an Hf〇2 deposition period, which includes: supplying the Hf source; clearing the physical absorption Hf source; Exposing the Hf source to an oxidant; and removing the unreacted Hf source and the oxidant, and repeating the Hf〇2 deposition cycle y times. The (La source/clear/oxidant exposure/clearing) cycle is referred to as a La2〇3 deposition cycle, which includes: supplying the La source; removing the unreacted La source; exposing the La source to an oxidant; and removing the unreacted La source and oxidant. Make the Ϊ285942

The La2〇3 deposition cycle was repeated z times. The Hf〇2 layer and the La2〇3 layer having a predetermined thickness are deposited by repeating the Hf〇2 deposition period and the La2〇3 deposition period by y and z times, respectively. A combined deposition period comprising the HfCh deposition period and the La2〇3 deposition period is repeated n times to determine the entire thickness of the HfLaO nanocomposite dielectric layer. Regarding Fig. 7, an example of depositing a dielectric layer of the HfLaO nanocomposite in accordance with a second embodiment of the present invention will be described below. It should be noted that the unit period of (Hf/N2/〇3/N2) is referred to as a Hf〇2 deposition > cycle and repetition y times. In this unit cycle, Hf, N2, and 〇3 are respectively an Hf source, a purge gas, and a oxidizing gas. It should also be noted that the unit period of (La/N2/〇3/N2) is referred to as a La2Ch deposition period and repeated z times. In this unit period, La, N2, and 〇3 are a La source, a purge gas, and an oxidizing gas, respectively. The Hf〇2 deposition cycle and the La2〇3 deposition cycle are carried out in a reaction chamber maintained at a pressure of from about 0.1 Torr to about 10 Torr and a substrate temperature of from about 100 °C to about 450 °C. As for the Hf〇2 deposition cycle, an Hf source selected from the group consisting of HfCl4, Hf(N〇3)4, pHf(NCH2C2H5)4, and Hf(〇C2H5)4 was evaporated in an evaporator. Then, the Hf source is supplied to the reaction chamber maintained under the above conditions for about 0.1 second to about 3 seconds to absorb the Hf source on the substrate. The N2 gas is supplied to the reaction chamber for about 1 second to about 5 seconds to purge the unreacted Hf source to the outside of the reaction chamber. The helium gas is supplied to the reaction chamber for about 0. 1 second to about 3 seconds to cause a reaction between the source of the absorbed Hf and the gas of the (1), thereby forming a layer of Hf?. The Nf2 gas is again supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove the unreacted helium 3 gas and by-products of the reaction. 18- 1285942 4 * The HfCh deposition cycle is repeated y times to deposit a layer of 1 02 of a predetermined thickness of about 1 A to about 5 Å. In addition to the 03 gas, H20 vapor can also be used as the oxidizing agent. Similarly, in addition to the above N2 gas, an inert gas such as argon (A 〇 as a purge gas may be used. As for the LuCh deposition cycle, La (TMHD) 3 as the La source is supplied to the maintenance. The reaction chamber is conditioned for about 0.1 second to about 3 seconds to absorb the La(TMHD)3 on the substrate. The N2 gas is supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove the unreacted La. (TMHD) 3 to > outside the reaction chamber. Then, the helium 3 gas is supplied into the reaction chamber for about 0.1 second to about 3 seconds to cause a reaction between the absorbed La(TMHD) 3 and the helium 3 gas. To deposit a layer of La2〇3. The N2 gas is supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove the unreacted helium 3 gas and by-products to the outside of the reaction chamber. The 〇3 deposition cycle is repeated z times to deposit a LazCh layer of a predetermined thickness of about 1 A to about 5 A. In addition to the above La(TMHD)3, La(iPrCp)3 > La(TMHD)3 tetraglyme, La ( TMHD) 3 tetraen or I La(TMHD) 3diglyme. Similarly, in addition to the 03 gas, H20 vapor can be used as the oxidant, and in addition to the n2 gas In addition, an inert gas such as argon may be used as the purge gas. Fig. 8 is a view showing the structure of a dielectric layer of a HfLaO nanocomposite deposited in accordance with a second embodiment of the present invention. The HfLaO nanocomposite dielectric layer is not a composite structure having the Hf〇2 layer and the La2Ch layer, but a specific structure of the Hf〇2 layer and the La2〇3 layer in a nanocomposite form. The ALD method for depositing the Hf〇2 layer and the La2〇3 layer allows obtaining the upper -19-1285942 I4.1 nanocomposite structure. Specifically, 'controls the Hf〇2 deposition period represented by Y The number of times and the number of La2〇3 deposition cycles denoted by Y to deposit each layer of HfCh layer and La2〇3 layer of about 1 A to about 5 A thick. When the Hf〇2 layer and the La2〇3 layer are discontinuously deposited The thickness is obtained for each of the layers. If the thickness is greater than about 5 A', the HfCh layer and the La2Ch layer are successively deposited, resulting in a stacked structure. The HfZrO nanocomposite dielectric layer is required to have some conditions. First, the HfCh layer deposited in the above HfCh deposition cycle and the above La2〇'3 The thickness of the La2〇3 layer deposited in the cycle should be in the range of about 1 A to about 5 A. As described above, if the thickness is greater than about 5 A, the HfCh layer and the La2 are successively deposited with individual characteristics.层 3 layers of each layer, and thus, may cause the stack structure or even cause a decrease in characteristics. Second, the number of times of the Hf 〇 2 deposition cycle (ie, 彳·) and the number of times of the La 2Ch deposition cycle ( That is, ζ·) to less than about 1 以 to have a nanocomposite structure. That is, the ratio of 1 y · · · ζ is between about 1: 1 〇 and about 10: 1. If the number of each of the 〇2 and La2Ch deposition cycles is less than about 10, the Hf〇2 layer and the La2〇3 layer are mixed in the form of a nanocomposite to cause the HfLaO nanocomposite. a material dielectric layer, wherein the HfLaO nanocomposite dielectric layer is not the Hf〇2 layer and is not the La2Ch layer. Similarly, if the ratio of y, y, z is set to be between about 1:1 Å and about, each of the HfCh layer and the La2Ch layer having a predetermined thickness of about i A to about 5 A may be deposited. The dielectric layer of the HfLaO nanocomposite obtained by the ALD method carried out under the above conditions has the following characteristics: increased crystallization temperature and resistance to -20-1285942 * » ^ I t thermal characteristics and improved dielectric properties . In particular, the improvement in dielectric properties can be ascertained by the fact that the dielectric constant of the HfLaO nanocomposite dielectric layer is in the range of from about 25 to about 30. This high dielectric constant is caused by the fact that the dielectric constants of Hf〇2 and La2〇3 are about 25 and 30, respectively. After the deposition of the dielectric layer of the HfLaO nanocomposite, an annealing treatment is performed to remove the organic material contained in the dielectric layer of the HfLaO nanocomposite and densify the dielectric of the HfL a nano composite Floor. The annealing treatment is carried out at about 30 (TC to about 500 ° C for about 30 sec to about 1200 sec in a 03 environment. Figure 9 is a diagram for describing a third embodiment in accordance with the present invention. A graph of the ALD method for depositing a dielectric layer of a HfTa nano-composite composite material by continuous supply of gas. The unit period of the ALD method for depositing the dielectric layer of the HfTaO nanocomposite is as follows: [(Hf source/clear/ Oxidant exposure/clearing) y (Ta source/clearing/oxidizing agent exposure/clearing) z]n. Hereinafter, this unit period is referred to as a third unit period. | The Hf source is a * for supplying the Hf source so that A pulse of H f 0 2 is generated, and the Ta source is used to supply the Ta source to generate a pulse of Ta 2 〇 5. The subscript symbols, ', and Y respectively represent (Hf source/clear/oxidant exposure/clear) cycles The number of times, the number of (Ta source/clearing/oxidizing agent exposure/clearing) cycles, and the number of cycles determining the thickness of the HfTaO dielectric layer. In more detail of the third unit cycle, (Hf source/clear/ The oxidant exposure/clearing cycle is referred to as an Hf02 deposition cycle, which includes: supplying the Hf ; Clear the source physical absorption Hf; Hf exposing the source to an oxidant; and clear of the Hf source and the unreacted oxidizing agent, and causing the deposition cycle is repeated Hf〇2 y -21- 1285942

It « times. The (Ta source/clearing/oxidant exposure/clearing) cycle is referred to as a Ta2〇3 deposition cycle 'which includes: supplying the Ta source V to remove the unreacted Ta source; exposing the Ta source to an oxidant; and clearing the Reacts Ta source and oxidant. The Ta2〇5 deposition cycle was repeated z times. The HfCh layer and the 32 Å layer having a predetermined thickness are deposited by repeating the Hf 〇 2 deposition period and the Ta 2 〇 5 deposition period, respectively, 7 and z times. A combined deposition period comprising the Hf〇2 deposition period and the Ta2〇5 deposition period is repeated n times to determine the entire thickness of the HfTaO nanocomposite dielectric layer. Regarding Fig. 9, an example of depositing a dielectric layer of the HfTaO nanocomposite in accordance with a third embodiment of the present invention will be described below. It should be noted that the unit period of (Hf/N"〇3/N2) is referred to as an HfCh deposition period and repeated y times. In this unit period, Hf, N2, and Ch are respectively an Hf source, a purge gas, and an oxidizing gas. It should also be noted that the unit period of (Ta/N2/Ch/N2) is referred to as a Ta2〇5 deposition period and is repeated z times. In this unit period, Ta, N2, and 〇3 are a Ta source, a purge gas, and an oxidizing gas, respectively. The Hf〇2 deposition cycle and the Ta2〇5 deposition cycle are carried out in a reaction chamber maintained at a pressure of from about 1 Torr to about 10 Torr and a substrate temperature of from about 10 °C to about 450 °C. As for the HfCh deposition period, the Hf source selected from the group consisting of HfCh, Hf(NCh)4, Hf(NCH2C2H5)4, and Hf(OC2H〇4 is evaporated in an evaporator. Then, the Hf source is supplied to Maintaining the reaction chamber under the above conditions for about 0.1 second to about 3 seconds to absorb the Hf source on the substrate. The N2 gas is supplied to the reaction chamber for about 1 second to about 5 seconds to clear the The unreacted Hf source is supplied to the outside of the reaction chamber. The helium 3 gas is supplied to the reaction chamber for about 0.1 second to about 3 seconds 'in order to absorb the Hf source and the helium 3 gas-22-1285942 I**. The reaction is initiated to form an Hf 2 layer. The N 2 gas is again supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove the unreacted gas and by-products of the reaction. Repeating y times to deposit a layer of 1 0 to a predetermined thickness of about 1 A to about 5 A. In addition to the 03 gas, H 2 〇 vapor may be used as the oxidizing agent. Similarly, in addition to the above N 2 gas, it may be used. An inert gas such as argon (Ar) is used as a purge gas. As for the Ta2Ch deposition cycle, it will be used as the Ta-oxide bismuth supply. Up to about 0.1 second to about 3 seconds in the reaction chamber maintained under the above conditions to absorb the molybdenum pentoxide on the substrate. The % gas is supplied to the reaction chamber for about 0.1 second to about 5 seconds to remove The unreacted molybdenum pentoxide is applied to the outside of the reaction chamber. Then, the helium 3 gas is supplied to the reaction chamber for about 0.1 second to about 3 seconds to cause a reaction between the absorbed bismuth pentoxide and the ruthenium 3 gas. To deposit a further layer of Ta2〇5. The unreacted helium 3 gas and by-products are removed to the outside of the reaction chamber by supplying the N2 gas to the reaction chamber for about 0.1 second to about 5 seconds. The above Ta2〇5 deposition cycle is repeated z times to deposit a predetermined thickness of Ta2〇5 layer of about 1 A to about 5 A. Similarly, in addition to the 〇3 gas, HW vapor may be used as the oxidizing agent, and In addition to the n2 gas, an inert gas such as argon may be used as the purge gas. Fig. 10 is a view showing the structure of a dielectric layer of a HfTaO nanocomposite deposited in accordance with a third embodiment of the present invention. As described, the HfTaO nanocomposite dielectric layer does not have the Hf〇2 layer And the stacked structure of the Ta2〇5 layer is formed by mixing the Hf〇2 layer and the specific structure of the τa205 layer in the form of a nanocomposite.

:S -23- 1285942 The ALD method for depositing the HfCh layer and the Ta2〇5 layer allows obtaining an upper nanocomposite structure. Specifically, the number of HfCh deposition periods indicated by γ and the number of Ta2〇5 deposition periods indicated by 'z1 are controlled to deposit each layer of the HfCh layer and the Ta2〇5 layer of about 1 to about 5 A thick. This thickness is obtained when the HfCh layer and each of the Ta2〇5 layers are deposited discontinuously. If the thickness is greater than about 5 A, the H f 0 2 layer and the T a 2〇5 layer are continuously deposited, resulting in the stacked structure. There are some conditions for obtaining the HfTaO nanocomposite dielectric layer. First, the thickness of the HfCh layer deposited in the above Hf〇2 deposition cycle and the Ta2〇5 layer deposited in the above Ta2〇5 deposition cycle should be in the range of about 1 A to about 5 A. As described above, if the thickness is greater than about 5 A, each of the Hf 2 layer and the Ta 2 5 layer is successively deposited in an individual characteristic, and thus, may cause the stack structure or even cause a decrease in characteristics. Second, the number of times of the HfCh deposition cycle (i.e., the number of times of the Ta2〇5 deposition cycle (i.e., ζ·) should be set to about 丨〇 or less to have a nanocomposite structure. The ratio of 1y·对·ζ· is between about 1:10 and about |10: 1. If this is the case, the number of cycles in the deposition cycle of 〇2 and Ta2〇5 is less than about 10 times' Mixing the H f 0 2 layer and the T a 2〇5 layer in a nanocomposite form, thereby resulting in the HfTa0 nano composite dielectric layer, wherein the HfTaO nano composite dielectric layer is not the HfCh layer and is not The Ta2 〇 5 layer. Similarly, if the ratio of y · y · z · is set between about 1: 丨〇 and about 1 i, Hf 具有 having a predetermined thickness of about 1 A to about 5 A may be deposited. Each of the 2 and Τυ〇5 layers. The HfTa ◦ nanometer rs - 24· 1285942 obtained by the ALD method carried out under the above conditions (I i composite dielectric layer has the following characteristics: increased Crystallization temperature and heat resistance characteristics and improved dielectric properties. In particular, the improvement of the dielectric properties can be confirmed by the fact that the HfTa◦ The dielectric constant of the dielectric layer of the rice composite is at least higher than the dielectric constant of Hf 〇 2. Since the dielectric constants of the Hf 〇 2 layer and the Ta 2 〇 5 are about 25 and 26, respectively, this high dielectric constant is caused. After deposition of the dielectric layer of the HfTaO nanocomposite, an annealing treatment is performed to remove the organic material contained in the dielectric layer of the HfTaO nanocomposite and densify the dielectric layer of the HfTaO nanocomposite. The φ system is carried out in a range of about 300 ° C to about 500 ° C for about 30 seconds to about 120 seconds in a 〇 3 environment. Each of the above HfZrO, HfLaO, HfTaO nanocomposite dielectric layers has about A total thickness of 25 A to about 200 A. Figure 11 is a cross-sectional view showing a capacitor having a nanocomposite dielectric structure in accordance with another exemplary embodiment of the present invention. For example, the nanometer The composite dielectric structure comprises a dielectric layer of HfZrO nanocomposite. φ As described above, the capacitor comprises: a lower electrode 2 1 ; the aforementioned HfZrO nanocomposite dielectric layer 22 formed on the lower electrode 2 1 And on the HfZrO nanocomposite dielectric layer 22 An upper electrode 23. The lower electrode 21 and the upper electrode 23 are selected from the group consisting of - doped with phosphorus (P) or arsenic (As), titanium nitride (TiN), ruthenium (Ru), A material consisting of a group consisting of ruthenium oxide (Ru〇2), uranium (Pt), 铱_(Ir), and iridium oxide (Ir〇2). For example, the capacitor can be an insulating layer-矽 (S IS The structure is formed, wherein the lower electrode 2 1 and the upper electrode 23 are formed of a polysilicon. A metal-insulator-germanium (MIS) capacitor structure or a metal-insulator layer-metal (MIM) capacitor junction is also allowed. -25-1285942 . For the MIS capacitor structure, the lower electrode 2 1 is formed of a polysilicon and the upper electrode 23 is formed of a metal or an oxidized metal. For the ΜIM capacitor structure, the lower electrode 21 and the upper portion The electrode 23 is formed of a metal or an oxidized metal. The lower electrode 2 1 may be formed in a stacked structure or in a three-dimensional structure (for example, a concave structure or a cylindrical structure). As shown in Figs. 4 and 5, the HfZrO nanocomposite dielectric layer 22 disposed between the lower electrode 21 and the upper electrode 23 is formed by an ALD method. More specifically, an Hf 〇 2 deposition cycle and a Zr 〇 2 | deposition cycle are repeatedly performed to obtain a HfZrO nanocomposite dielectric layer 22 of from about 25 to about 200 Å. The lower electrode 21 and the upper electrode 23 are not individually in contact with an HfO 2 layer and a Zr〇2 layer, but are in contact with the Hf〇2 layer and the Zr〇2 layer at the same time (refer to FIG. 5). That is, the HfZrO nanocomposite dielectric layer 22 is not formed in a stacked structure (continuously stacking the H f 0 2 layer and the zr 0 2 layer on each other); instead, the Hf〇2 layer is formed And the ZrCh layer is mixed in the form of a nanocomposite. As described above, according to the ALD method, the number of unit periods can be controlled to discontinuously deposit the Hf〇2 layer and the ZrCh layer, so that the HfZrO nanocomposite dielectric layer 2 2 can have one nanometer. Composite structure. Since the HfZrO nanocomposite dielectric layer 22 is deposited as in the first embodiment of the present invention, a detailed description thereof will be omitted. Controlling the Hf〇2 deposition cycle and the number of repetitions of the Zr〇2 deposition cycle (for example, and Y) to deposit each layer of the Hf〇2 layer and the Zr〇2 layer of about 5 to about 5 people for the HfZrO nanometer. The total thickness of the composite dielectric layer 22 is in the range of from about 25A to about 200A. For example, as shown in Figures 4 and 5, the ratio of -26 - 1285942 ft, t I i , · is set to be in the range between about i: i 〇 and about 10: 1. If the thickness of each of the Hf〇2 layer and the Zr〇2 layer is greater than about 5 A, the Hf〇2 layer and the Zr〇2 layer are continuously deposited, thereby causing a layer having the layer and the Zr〇2 layer. Stack structure. The stacked structure has a reduced dielectric property compared to the aforementioned HfZrO nanocomposite structure. Although not described, if the lower electrode 21 includes a polysilicon, the lower electrode 2 is oxidized during the formation of the HfZrO nanocomposite dielectric layer 22 on the lower electrode 21, so that an ammonia gas (NH3) A rapid thermal processing (RTP) is performed in the environment at about 800 ° C to about 1,000 ° C for about 10 seconds to about 120 seconds to prevent the formation of a native oxide layer. The result of the RTP forms a tantalum nitride layer, and the tantalum nitride layer prevents deterioration of leakage current characteristics and reduction of dielectric constant. Although Fig. 11 depicts the application of the HfZrO nanocomposite dielectric layer as the dielectric layer of the capacitor, other nanocomposite dielectric layers including HfLaO and HfTaO may be applied. According to an exemplary embodiment of the present invention, even if a thin nanocomposite φ dielectric layer is used, the dielectric layer in the form of a nanocomposite can obtain leakage current characteristics without reducing the dielectric constant. The present application contains the subject matter of the Korean Patent Application No. KR 2005-003 65 29 filed on April 30, 2005 in the Korean Patent Office, the entire disclosure of which is incorporated herein by reference. content. While the invention has been described with respect to the preferred embodiments of the present invention, it will be apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention. [Simple description of the map]

-27- 1285942 * « tc i is a cross-sectional view showing a capacitor having a conventional dielectric structure, wherein the conventional dielectric structure includes an oxidized (Hf02) layer and an aluminum oxide (Al 2 〇 3) layer; 2 is a graph showing the dielectric constant of a conventional dielectric material including Hf〇2, A12〇3, and nano composite material HfA1〇; FIG. 3 is a view showing a nanometer according to a specific embodiment of the present invention. A schematic diagram of a composite dielectric structure; FIG. 4 depicts a graph of an atomic layer deposition (ALD) method for depositing a dielectric layer of a HfZrO nanocomposite in accordance with a first embodiment of the present invention. Figure 5 is a diagram showing the structure of the dielectric layer of the HfZr〇 nanocomposite obtained in accordance with the first embodiment of the present invention; the sixth line shows the HfZr〇 obtained according to the first embodiment of the present invention. A pattern of comparison between the dielectric constant of the dielectric layer and the dielectric material and the dielectric material of the other dielectric materials; the 7th ffl shows that the dielectric layer is deposited in accordance with the second embodiment of the present invention | HfLaO nanocomposite dielectric The graph of the ald method of the layer; the figure 8 is based on the description of the hair A schematic diagram of the structure of the dielectric layer of the HfLaO nanocomposite obtained in the second embodiment; the stomach 9® shows an ALD for depositing a dielectric layer of a HfTaO nanocomposite according to the third embodiment of the present invention. FIG. 10 is a diagram depicting the structure of a dielectric layer of a HfTaO nanocomposite obtained in accordance with a third embodiment of the present invention; and FIG. 1 is a view showing a specific embodiment in accordance with the present invention. A cross-sectional view of the structure of a capacitor having a dielectric layer of a HfZirO nanocomposite. -28- 1285942

HfZrO nanocomposite dielectric layer capacitor structure cross-section diagram main element symbol description] 11 lower electrode 12 dielectric structure 12A A 1 2〇3 layer 12B Hf〇2 layer 13 upper electrode 21 lower electrode 22 HfZrO nano Composite dielectric layer 23 upper electrode

-29

Claims (1)

1285942 • , k X. Patent application scope: I—The dielectric structure of a capacitor, including: —layer oxide (HfCh) layer; and layer dielectric layer 'mainly having dielectric equal to or greater than the Hf〇2 layer a constant material, wherein the dielectric structure comprises a nanocomposite dielectric structure, the nanocomposite dielectric structure is mixed with the dielectric layer by a nanocomposite form Got it. 2. The dielectric structure of claim 3, wherein the dielectric layer has a dielectric constant ranging from about 25 to about 3 Å and a band gap energy level ranging from about 4 · 3 to about 7.8. 3. The dielectric structure of claim 3, wherein the dielectric layer comprises a material selected from the group consisting of Zr〇2, La2〇3, and 1^2〇5. 4. The dielectric structure of claim 2, wherein the nanocomposite dielectric structure is obtained by mixing the Hf〇2 layer and the dielectric layer in the form of a nanocomposite, each layer It is formed by an atomic layer deposition (ALD) method and has a thickness of about 丨A to about 5 people per deposition period. g. The dielectric structure of claim 4, wherein the nanocomposite dielectric structure has a thickness of from about 25 A to about 2 Å Å. 6 - A method for fabricating a dielectric structure of a capacitor, comprising: forming a dielectric layer of a nanocomposite, by performing an atomic layer deposition (ALD)-method, repeatedly performing 1 y 1 and subsequent oxidation respectively ( Hf〇2) deposition period and dielectric layer deposition period, in a nanocomposite manner, mixed oxidation (Hf〇2) layer and dielectric layer; and annealing treatment to densify the nanocomposite dielectric structure . 7. The method of claim 6, wherein the Hf〇2 deposition period package -30-1285942 ί I comprises: absorbing a feed (Hf) source; removing an unreacted portion of the Hf source; supplying an oxidant to induce The reaction of absorbing the Hf source to deposit the Hf 2 layer; and removing the unreacted portion of the oxidant and by-products of the reaction. 8. The method of claim 7, wherein the Hf〇2 layer deposition is performed at a temperature ranging from about 10 (TC to about 450 ° C and at about 0.1 > torr to about The method of claim 7, wherein the absorption of the Hf source comprises: evaporating the selected from the group consisting of HfCh, Hf(N〇3)4, Hf ( a Hf source of the group consisting of NCH2C2H5)4 and Hf(〇C2H5)4; and supplying the source of the evaporated Hf to a reaction chamber for about 1 second to about 3 seconds, wherein the reaction chamber is maintained at about 0.1 Torr to a pressure of about 10 Torr and a substrate temperature of about 100 ° C to about 45 ° C. 1 0. The method of claim 7, wherein the oxidant is supplied by Ch or The H2 〇 vapor is from about 0.1 second to about 3 seconds. The method of claim 7, wherein the unreacted portion of the oxidizing agent and the by-product of the reaction are by using nitrogen (N2) or a The inert gas is from about 0.1 second to about 5 seconds. The method of claim 6, wherein the dielectric layer comprises a composition selected from the group consisting of Zr〇2, La2〇3, and Ta2〇5. The material of one of the groups. 1 3. The method of claim 12, wherein the dielectric layer is selected from the group consisting of Zr〇2, by using one selected from Zr (N(CH3) (C2H5)) 4 (TEMAZ) and Zr(N(C2H5)2)4 (TDEAZ) of 1,295,942 t pin (formed by the source of the product. 1 4. The method of claim 2, wherein The dielectric layer, which is selected from La2〇3, is selected from the group consisting of La(TMHD)3, La(iPrCp)3, La(TMHD)3tetraglyme, La(TMHD)3tetraen and La(TMHD). Formed by the source of 3 diglyme (La). 1 5 · The method of claim 12, wherein the dielectric layer is selected from the group consisting of Ta2〇5, which is obtained by using molybdenum pentoxide. Formed by the source. | 1 6 · As in the method of claim 6, wherein the ratio of y ' to Y is in the range of about 1:10 to about 10: 1. i 7. If applying for a patent The method of claim 6, wherein the HfCh layer and the dielectric layer are in a nanocomposite form by repeatedly depositing the Hf〇2 layer and the dielectric layer for each deposition period to about 1 A to about 5 A thick. In order to make the nano composite The dielectric structure has a thickness ranging from about 25 to about 200 A. The method of claim 6, wherein the nanocomposite dielectric > electrical structure is annealed at about 30 (TC to about 500) It is carried out at ° C for about 30 seconds to about 120 seconds. A capacitor comprising: a lower electrode; a nanocomposite dielectric structure formed on the lower electrode and comprising an oxidized (Hf 〇 2) layer and a layer equal to or greater than the Hf 〇 2 layer a dielectric constant dielectric layer, wherein the Hf〇2 layer and the dielectric layer are mixed in a nanocomposite form; and an upper electrode formed on the nanocomposite dielectric structure. 20. The capacitor of claim 19, wherein the Hf 2 layer and the dielectric layer are formed by an atomic layer deposition (ALD) method. 21. The capacitor of claim 20, wherein the nanocomposite dielectric structure is obtained by repeatedly depositing the HfCh layer and the dielectric layer in the form of a nanocomposite, each layer having about lA to about 5 thickness. 22. The capacitor of claim 19, wherein the nanocomposite dielectric structure has a thickness ranging from about 25 to about 200. The capacitor of claim 19, wherein the dielectric layer comprises a material selected from the group consisting of Zr〇2, La2Ch, and Ta2〇5. 24. The capacitor of claim 23, further comprising a layer of ruthenium nitride, the tantalum nitride layer being formed between the lower pole and the nanocomposite dielectric structure. 25. The capacitor of claim 23, wherein the lower electrode and the upper electrode comprise a titanium oxide (TiN), ruthenium (Ru), ruthenium oxide (RuCh), platinum (Pt), iridium (Ir) ), a material consisting of yttrium oxide (lr〇2) and a group of polycrystalline germanium doped with phosphorus (p) & or arsenic (A s). 26. A method for fabricating a capacitor, comprising: forming a lower electrode; forming a nanocomposite dielectric structure implemented on the lower electrode by atomic layer deposition (ALD), wherein the nanocomposite The dielectric structure is obtained by mixing a layer of oxidized (Hf〇2) layer and a dielectric layer having a dielectric constant equal to or greater than the HfO2 in the form of a nanocomposite; performing an annealing treatment to densify the naphthalene Rice composite dielectric structure; -33- 1285942 υ * • Teach and form an upper electrode on the dielectric structure of the annealed nanocomposite. 27. The method of claim 26, wherein the dielectric layer structure in the form of a nanocomposite comprises a deposition of Hf〇2 deposited on the Hf〇2 layer by the ALD method. The period 'and a dielectric layer deposition period for depositing the dielectric layer are respectively performed at V and 1 z, respectively, and the deposition period. 28. The method of claim 27, wherein the HfCh deposition cycle> comprises: absorbing an Hf source; removing an unreacted portion of the Hf source; supplying an oxidant to induce a reaction with the absorbing Hf source to deposit Hf〇 2 layers; and removing unreacted portions of the oxidant and by-products of the reaction. 29. The method of claim 28, wherein the Hf〇2 deposition cycle is at a temperature ranging from about 100 ° C to about 450 ° C and at about 〇 丨 Torr | to about 10 Torr Implemented under pressure. 3. The method of claim 28, wherein the absorption of the Hf source comprises: evaporating the group selected from the group consisting of HfCl4, Hf (N〇〇4, Hf(NCH2C2H5)4, and Hf(〇C2H5)4 a group of Hf sources; and supplying the evaporated Hf source to a reaction chamber for about 〇·丨 seconds to about 3 seconds, wherein the reaction chamber is maintained at a pressure of from about 0. 1 Torr to about 1 Torr. A substrate temperature of from 100 ° C to about 45 ° C. 3 1. The method of claim 28, wherein the supply of the oxidant 128.5942 is by supplying 〇3 or H2 〇 vapor for about 01 seconds to about 3 seconds. 32. The method of claim 28, wherein the unreacted portion of the scavenging oxidant and the by-product of the reaction are by using nitrogen (M2) or an inert gas for about 0.1 second to about 5 seconds. 33. The method of claim 27, wherein the dielectric layer formed by the dielectric layer deposition period comprises a group selected from the group consisting of Zr〇2, La2〇3, and T a 2 0 5 3 4 · The method of the third paragraph of the patent scope of the application, wherein the selected material, Zr〇2 is the dielectric layer, by using Formed from a source of Zr (N(CH3)(C2H〇)4 (TEMAZ) and Zr(N(C2H5)2)4 (TDEAZ) pin (Zr). 3 5 · As claimed in Article 3 3 Method 'The dielectric layer mainly composed of the selected material La2〇3 is obtained by using one selected from the group consisting of La(TMHD)3, La(iPrCp)3, La(TMHD)3tetraglyme, La(TMHD)3tetraen and La (TMHD) formed by the source of (3) of 3diglyme. 36. The method of claim 33, wherein the dielectric layer selected from the selected material p Ta2 〇 5 is used by using molybdenum pentoxide. The molybdenum source is formed. 3 7 · The method of claim 27, wherein the ratio of y 'to · z · is in the range of about 1 · · 1 0 and about 10 : 1 . The method of claim 26, wherein the Hf 2 layer and the dielectric layer are in the form of a nanocomposite by repeatedly depositing each layer for each deposition period of about 1 to about 5 A thick. And mixing the HfCh layer and the dielectric layer such that the nanocomposite dielectric structure has a thickness ranging from about 25 A to about 200 A. -35 - 12 of 42 ft 11 3 9 · as claimed in claim 26 Method, wherein The annealing of the dielectric structure of the nanocomposite is performed at 300 ° C to about 50 CTC for about 30 seconds to about 120 seconds. 4 0. The method of claim 26, wherein the lower electrode Including one selected from the group consisting of titanium nitride (TiN), ruthenium (Ru), ruthenium oxide (RuO〇, lead (Pt), ruthenium (1〇, iridium oxide (Ir〇2), and doped with phosphorus (p) or arsenic ( As) The material of the group consisting of polycrystalline germanium. 4 1 The method of claim 40, further comprising a layer of nitrided germanium, the tantalum nitride layer being formed between the lower pole and the nanocomposite dielectric structure. 42. The method of claim 41, wherein the tantalum nitride layer is applied to the lower electrode by an atmosphere of about 800 ° C to about 1 ° C in an ammonia (NH 3 ) environment. A rapid thermal process (RTP) is from about 10 seconds to about 120 seconds. vS -36-