JP2006303022A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2006303022A JP2006303022A JP2005119864A JP2005119864A JP2006303022A JP 2006303022 A JP2006303022 A JP 2006303022A JP 2005119864 A JP2005119864 A JP 2005119864A JP 2005119864 A JP2005119864 A JP 2005119864A JP 2006303022 A JP2006303022 A JP 2006303022A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 下地領域(13,15,16)上に第1のマスクパターン(21a,21b)を形成する工程と、下地領域上に、第1のピッチで配置された複数のダミーラインパターン(21c)を形成する工程と、ダミーラインパターンの両長側面に形成された所定マスク部分を有する第2のマスクパターン(25c)を形成する工程と、ダミーラインパターンを除去する工程と、第1のマスクパターン及び所定マスク部分をマスクとして用いて下地領域をエッチングする工程と、を備える。
【選択図】 図10
Description
13…フローティングゲート電極膜 14…素子分離領域
15…電極間絶縁膜 16…コントロールゲート電極膜
21…マスク膜
21a、21b…マスクパターン(第1のマスクパターン)
21c…ダミーラインパターン
22…ハードマスク膜 22a、22b…ハードマスクパターン
23a、23b、24、24c、26…フォトレジストパターン
25c…側壁マスクパターン(第2のマスクパターン)
25a、25b…側壁マスクパターン
25ap、25bp、25cp…所定マスク部分
Claims (6)
- 下地領域上に第1のマスクパターンを形成する工程と、
前記下地領域上に、第1のピッチで配置された複数のダミーラインパターンを形成する工程と、
前記ダミーラインパターンの両長側面に形成された所定マスク部分を有する第2のマスクパターンを形成する工程と、
前記ダミーラインパターンを除去する工程と、
前記第1のマスクパターン及び前記所定マスク部分をマスクとして用いて前記下地領域をエッチングする工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記所定マスク部分は、前記第1のピッチの半分の第2のピッチで配置される
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記ダミーラインパターンを形成する工程は、
前記下地領域上に前記ダミーラインパターンよりも幅の広い予備パターンを形成する工程と、
前記予備パターンの幅を減少させる工程と、
を含むことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1のマスクパターンは、第1のマスクパターン上に形成された保護マスクパターンをマスクとして用いて形成され、
前記ダミーラインパターンを除去する工程において、前記第1のマスクパターンは前記保護マスクパターンによって保護される
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 下地領域上に、第1のピッチで配置された複数のダミーラインパターンを形成する工程と、
前記ダミーラインパターンの両長側面に形成された所定マスク部分を有し、前記ダミーラインパターンを囲む閉ループ形状のマスクパターンを形成する工程と、
前記ダミーラインパターンを除去する工程と、
前記マスクパターンの両端部分を除去して前記所定マスク部分を残す工程と、
前記所定マスク部分をマスクとして用いて前記下地領域をエッチングする工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記マスクパターンを形成する工程は、
前記ダミーラインパターンを覆う被覆膜を形成する工程と、
前記被覆膜を異方性エッチングして前記マスクパターンを形成する工程と、
を含むことを特徴とする請求項5に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005119864A JP4921723B2 (ja) | 2005-04-18 | 2005-04-18 | 半導体装置の製造方法 |
US11/346,237 US7604926B2 (en) | 2005-04-18 | 2006-02-03 | Method of manufacturing a semiconductor device |
KR1020060029054A KR100731334B1 (ko) | 2005-04-18 | 2006-03-30 | 반도체장치의 제조방법 |
Applications Claiming Priority (1)
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JP2005119864A JP4921723B2 (ja) | 2005-04-18 | 2005-04-18 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011266116A Division JP5524167B2 (ja) | 2011-12-05 | 2011-12-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006303022A true JP2006303022A (ja) | 2006-11-02 |
JP4921723B2 JP4921723B2 (ja) | 2012-04-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005119864A Active JP4921723B2 (ja) | 2005-04-18 | 2005-04-18 | 半導体装置の製造方法 |
Country Status (3)
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US (1) | US7604926B2 (ja) |
JP (1) | JP4921723B2 (ja) |
KR (1) | KR100731334B1 (ja) |
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JP2009076902A (ja) * | 2007-09-18 | 2009-04-09 | Hynix Semiconductor Inc | 半導体素子の微細パターン形成方法 |
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KR100731334B1 (ko) | 2007-06-21 |
KR20060109821A (ko) | 2006-10-23 |
JP4921723B2 (ja) | 2012-04-25 |
US20060234165A1 (en) | 2006-10-19 |
US7604926B2 (en) | 2009-10-20 |
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