JP2006302891A5 - - Google Patents

Download PDF

Info

Publication number
JP2006302891A5
JP2006302891A5 JP2006112246A JP2006112246A JP2006302891A5 JP 2006302891 A5 JP2006302891 A5 JP 2006302891A5 JP 2006112246 A JP2006112246 A JP 2006112246A JP 2006112246 A JP2006112246 A JP 2006112246A JP 2006302891 A5 JP2006302891 A5 JP 2006302891A5
Authority
JP
Japan
Prior art keywords
composition
glass frit
silver powder
organic medium
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006112246A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006302891A (ja
JP5362946B2 (ja
Filing date
Publication date
Priority claimed from US11/106,245 external-priority patent/US7462304B2/en
Application filed filed Critical
Publication of JP2006302891A publication Critical patent/JP2006302891A/ja
Publication of JP2006302891A5 publication Critical patent/JP2006302891A5/ja
Application granted granted Critical
Publication of JP5362946B2 publication Critical patent/JP5362946B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006112246A 2005-04-14 2006-04-14 半導体デバイスの製造方法、およびそこで使用される導電性組成物 Expired - Fee Related JP5362946B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/106,245 US7462304B2 (en) 2005-04-14 2005-04-14 Conductive compositions used in the manufacture of semiconductor device
US11/106,245 2005-04-14

Publications (3)

Publication Number Publication Date
JP2006302891A JP2006302891A (ja) 2006-11-02
JP2006302891A5 true JP2006302891A5 (enExample) 2009-04-30
JP5362946B2 JP5362946B2 (ja) 2013-12-11

Family

ID=36688129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006112246A Expired - Fee Related JP5362946B2 (ja) 2005-04-14 2006-04-14 半導体デバイスの製造方法、およびそこで使用される導電性組成物

Country Status (7)

Country Link
US (2) US7462304B2 (enExample)
EP (1) EP1713095B1 (enExample)
JP (1) JP5362946B2 (enExample)
KR (1) KR100887128B1 (enExample)
CN (1) CN1862839B (enExample)
AU (1) AU2006201555A1 (enExample)
TW (1) TWI338308B (enExample)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4760709B2 (ja) * 2004-07-22 2011-08-31 東レ株式会社 感光性ペーストおよびディスプレイパネル用部材の製造方法
US7435361B2 (en) 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US7556748B2 (en) 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Ｏｋｉセミコンダクタ株式会社 半導体ウェハの製造方法
JP2007194580A (ja) * 2005-12-21 2007-08-02 E I Du Pont De Nemours & Co 太陽電池電極用ペースト
WO2007102287A1 (ja) 2006-03-07 2007-09-13 Murata Manufacturing Co., Ltd. 導電性ペースト及び太陽電池
NL2000248C2 (nl) * 2006-09-25 2008-03-26 Ecn Energieonderzoek Ct Nederl Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering.
TWI449183B (zh) * 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
WO2009052356A2 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US20090107546A1 (en) * 2007-10-29 2009-04-30 Palo Alto Research Center Incorporated Co-extruded compositions for high aspect ratio structures
US8253010B2 (en) * 2007-11-23 2012-08-28 Big Sun Energy Technology Inc. Solar cell with two exposed surfaces of ARC layer disposed at different levels
US20110027935A1 (en) * 2008-03-14 2011-02-03 Atomic Energy Council - Institute Of Nuclear Energy Research Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
EP2260493A1 (en) * 2008-04-09 2010-12-15 E. I. du Pont de Nemours and Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US8128846B2 (en) * 2008-05-28 2012-03-06 E. I. Du Pont De Nemours And Company Silver composition for micro-deposition direct writing silver conductor lines on photovoltaic wafers
US8008179B2 (en) * 2008-05-28 2011-08-30 E.I. Du Pont De Nemours And Company Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers
WO2009146398A1 (en) 2008-05-30 2009-12-03 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US8158504B2 (en) 2008-05-30 2012-04-17 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
TW201007770A (en) * 2008-06-06 2010-02-16 Du Pont Glass compositions used in conductors for photovoltaic cells
TWI493605B (zh) * 2008-06-11 2015-07-21 Ind Tech Res Inst 背面電極層的製造方法
US8076777B2 (en) * 2008-06-26 2011-12-13 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
DE102008032784A1 (de) * 2008-07-02 2010-03-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt
DE102008032554A1 (de) 2008-07-10 2010-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Metallhaltige Zusammensetzung, Verfahren zur Herstellung von elektrischen Kontaktstrukturen auf elektronischen Bauteilen sowie elektronisches Bauteil
US20100167032A1 (en) * 2008-12-29 2010-07-01 E.I.Du Pont De Nemours And Company Front electrode for pdp
JP2012521100A (ja) 2009-03-19 2012-09-10 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 太陽電池電極用導体ペースト
US20100258166A1 (en) * 2009-04-09 2010-10-14 E.I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
EP2417073A1 (en) * 2009-04-09 2012-02-15 E. I. du Pont de Nemours and Company Glass compositions used in conductors for photovoltaic cells
CN102348657A (zh) * 2009-04-09 2012-02-08 E.I.内穆尔杜邦公司 用于光伏电池导体中的玻璃组合物
WO2010123967A2 (en) * 2009-04-22 2010-10-28 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
TW201101338A (en) * 2009-04-23 2011-01-01 Du Pont Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces
EP2433306A1 (en) * 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102428567B (zh) * 2009-05-20 2015-01-07 E.I.内穆尔杜邦公司 在硅片正面上形成栅极的方法
US20100301479A1 (en) 2009-05-28 2010-12-02 E. I. Du Pont De Nemours And Company Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
TW201115592A (en) 2009-06-19 2011-05-01 Du Pont Glass compositions used in conductors for photovoltaic cells
US20110146781A1 (en) * 2009-06-26 2011-06-23 E.I. Du Pont De Nemours And Company Process of forming a grid cathode on the front-side of a silicon wafer
TW201133509A (en) * 2009-09-08 2011-10-01 Du Pont Conductors for photovoltaic cells
JP5137923B2 (ja) 2009-09-18 2013-02-06 株式会社ノリタケカンパニーリミテド 太陽電池用電極ペースト組成物
EP2504844A1 (en) * 2009-11-25 2012-10-03 E.I. Du Pont De Nemours And Company Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells
CN102640231A (zh) * 2009-11-25 2012-08-15 E·I·内穆尔杜邦公司 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法
US20110143497A1 (en) * 2009-12-16 2011-06-16 E. I. Du Pont De Nemours And Company Thick film conductive composition used in conductors for photovoltaic cells
WO2011075703A2 (en) 2009-12-18 2011-06-23 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US8252204B2 (en) 2009-12-18 2012-08-28 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US8294027B2 (en) * 2010-01-19 2012-10-23 International Business Machines Corporation Efficiency in antireflective coating layers for solar cells
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
US8535971B2 (en) * 2010-02-12 2013-09-17 Heraeus Precious Metals North America Conshohocken Llc Method for applying full back surface field and silver busbar to solar cell
CN109014180B (zh) 2010-05-04 2021-08-24 太阳帕斯特有限责任公司 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途
JP5351100B2 (ja) * 2010-07-02 2013-11-27 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物
US8105869B1 (en) 2010-07-28 2012-01-31 Boris Gilman Method of manufacturing a silicon-based semiconductor device by essentially electrical means
CN102347375A (zh) * 2010-07-30 2012-02-08 E·I·内穆尔杜邦公司 一种包括覆盖着反射条的导电带的太阳能电池模块
TW201213265A (en) 2010-08-06 2012-04-01 Du Pont Conductive paste for a solar cell electrode
EP2636070A4 (en) * 2010-10-28 2014-04-02 Heraeus Precious Metals North America Conshohocken Llc SOLAR CELL METALLIZATION WITH A METAL SUPPLEMENT
US20120113650A1 (en) * 2010-11-10 2012-05-10 E.I. Du Pont De Nemours And Company Insulating white glass paste for forming insulating reflective layer
KR20120078109A (ko) * 2010-12-31 2012-07-10 엘지이노텍 주식회사 태양 전지의 전극용 페이스트 조성물 및 태양 전지
JP6068474B2 (ja) * 2011-09-09 2017-01-25 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 銀製の太陽電池接点
DE102012221334B4 (de) 2011-12-22 2018-10-25 Schott Ag Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen
US20130183795A1 (en) 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
US20140020743A1 (en) * 2012-07-23 2014-01-23 E I Du Pont De Nemours And Company Solar cell and manufacturing method thereof
US20140261662A1 (en) 2013-03-18 2014-09-18 E I Du Pont De Nemours And Company Method of manufacturing a solar cell electrode
WO2016122833A1 (en) * 2015-01-26 2016-08-04 Ferro Corporation Grain boundary healing glasses and their use in transparent enamels, transparent colored enamels and opaque enamels
JP2016195109A (ja) 2015-03-27 2016-11-17 ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー 金属化合物を含む導電性ペースト
EP3275000A1 (en) 2015-03-27 2018-01-31 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising an oxide additive
JP6624930B2 (ja) 2015-12-26 2019-12-25 日亜化学工業株式会社 発光素子及びその製造方法
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP6688500B2 (ja) * 2016-06-29 2020-04-28 ナミックス株式会社 導電性ペースト及び太陽電池
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
TWI745562B (zh) 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 導電糊料組成物及用其製成的半導體裝置
KR102639865B1 (ko) * 2017-12-15 2024-02-22 스미토모 긴조쿠 고잔 가부시키가이샤 후막 도체 형성용 분말 조성물 및 후막 도체 형성용 페이스트
KR102243472B1 (ko) * 2018-12-17 2021-04-26 주식회사 경동원 전력반도체 접합용 소결 페이스트 조성물

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
JPS6166305A (ja) * 1984-09-07 1986-04-05 田中マツセイ株式会社 導体組成物
JPS6249676A (ja) * 1985-08-29 1987-03-04 Sharp Corp 太陽電池
JPS62259302A (ja) * 1986-05-02 1987-11-11 同和鉱業株式会社 導電ペ−スト組成物
WO1991015018A1 (en) 1990-03-19 1991-10-03 Asahi Kasei Kogyo Kabushiki Kaisha Paste for high temperature baking
JPH059623A (ja) 1991-07-01 1993-01-19 Sumitomo Metal Mining Co Ltd 銀−金属酸化物複合材料の製造方法
US5296413A (en) 1991-12-03 1994-03-22 E. I. Du Pont De Nemours And Company Automotive glass thick film conductor paste
US5302557A (en) * 1991-12-03 1994-04-12 E. I. Du Pont De Nemours And Company Automotive glass thick film conductor paste
JP3018866B2 (ja) * 1993-10-07 2000-03-13 株式会社村田製作所 積層電子部品の外部電極用卑金属組成物
JP3211641B2 (ja) * 1995-09-22 2001-09-25 株式会社村田製作所 導電性組成物
JP3209089B2 (ja) * 1996-05-09 2001-09-17 昭栄化学工業株式会社 導電性ペースト
JP3760361B2 (ja) * 1997-03-24 2006-03-29 株式会社村田製作所 太陽電池用導電性組成物
JP3775003B2 (ja) * 1997-08-07 2006-05-17 株式会社村田製作所 半導体セラミック用導電性ペースト及び半導体セラミック部品
US6071437A (en) * 1998-02-26 2000-06-06 Murata Manufacturing Co., Ltd. Electrically conductive composition for a solar cell
JP3430068B2 (ja) 1999-04-16 2003-07-28 シャープ株式会社 太陽電池の電極
JP4331827B2 (ja) 1999-06-29 2009-09-16 京セラ株式会社 太陽電池素子の製造方法
JP2001118425A (ja) * 1999-10-21 2001-04-27 Murata Mfg Co Ltd 導電性ペースト
JP2001127317A (ja) 1999-10-28 2001-05-11 Kyocera Corp 太陽電池の製造方法
JP3981270B2 (ja) * 2000-01-28 2007-09-26 Ｔｄｋ株式会社 多層基板に内蔵された導体パターン及び導体パターンが内蔵された多層基板、並びに、多層基板の製造方法
JP2001313400A (ja) 2000-04-28 2001-11-09 Kyocera Corp 太陽電池素子の形成方法
JP3534684B2 (ja) * 2000-07-10 2004-06-07 Ｔｄｋ株式会社 導電ペーストおよび外部電極とその製造方法
EP1451830B1 (en) * 2001-09-20 2006-06-14 E. I. du Pont de Nemours and Company Silver conductor compositions for solar cell electrodes
JP3910072B2 (ja) 2002-01-30 2007-04-25 東洋アルミニウム株式会社 ペースト組成物およびそれを用いた太陽電池
JP2004146521A (ja) 2002-10-23 2004-05-20 Sharp Corp 銀電極用ペーストおよびそれを用いた太陽電池セル
US7138347B2 (en) 2003-08-14 2006-11-21 E. I. Du Pont De Nemours And Company Thick-film conductor paste for automotive glass
US20060001009A1 (en) 2004-06-30 2006-01-05 Garreau-Iles Angelique Genevie Thick-film conductive paste
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
US7435361B2 (en) * 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices

Similar Documents

Publication Publication Date Title
JP2006302891A5 (enExample)
TW200731291A (en) Method of manufacture of semiconductor device and conductive compositions used therein
TW200735126A (en) Method of manufacture of semiconductor device and conductive compositions used therein
TW200731292A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices
JP2010532586A5 (enExample)
JP2011523492A5 (enExample)
JP2014187166A5 (enExample)
JP2011519112A5 (enExample)
JP2011502345A5 (enExample)
JP2017171934A5 (enExample)
JP2013520844A5 (enExample)
JP2012160742A5 (enExample)
JP2009033145A5 (enExample)
JP2014078558A5 (enExample)
JP2011044696A5 (ja) 半導体装置の作製方法
JP2013168419A5 (enExample)
JP2014135478A5 (ja) 半導体装置の作製方法
JP2012038996A5 (enExample)
CN108886101A (zh) 量子点发光二极管及其制造方法、显示面板和显示装置
JP2009194322A5 (enExample)
JP2013080935A5 (enExample)
JP2011096748A5 (enExample)
JP2011100992A5 (enExample)
JP2008022008A5 (enExample)
JP2012502411A5 (enExample)