KR100887128B1 - 반도체 소자의 제조 방법 및 그에 사용되는 전도성 조성물 - Google Patents
반도체 소자의 제조 방법 및 그에 사용되는 전도성 조성물 Download PDFInfo
- Publication number
- KR100887128B1 KR100887128B1 KR1020060034126A KR20060034126A KR100887128B1 KR 100887128 B1 KR100887128 B1 KR 100887128B1 KR 1020060034126 A KR1020060034126 A KR 1020060034126A KR 20060034126 A KR20060034126 A KR 20060034126A KR 100887128 B1 KR100887128 B1 KR 100887128B1
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- weight
- glass frit
- thick film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
- C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
- C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
- C03C8/12—Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
- Formation Of Insulating Films (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/106,245 US7462304B2 (en) | 2005-04-14 | 2005-04-14 | Conductive compositions used in the manufacture of semiconductor device |
| US11/106245 | 2005-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060108551A KR20060108551A (ko) | 2006-10-18 |
| KR100887128B1 true KR100887128B1 (ko) | 2009-03-04 |
Family
ID=36688129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060034126A Expired - Fee Related KR100887128B1 (ko) | 2005-04-14 | 2006-04-14 | 반도체 소자의 제조 방법 및 그에 사용되는 전도성 조성물 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7462304B2 (enExample) |
| EP (1) | EP1713095B1 (enExample) |
| JP (1) | JP5362946B2 (enExample) |
| KR (1) | KR100887128B1 (enExample) |
| CN (1) | CN1862839B (enExample) |
| AU (1) | AU2006201555A1 (enExample) |
| TW (1) | TWI338308B (enExample) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101190921B1 (ko) * | 2004-07-22 | 2012-10-12 | 도레이 카부시키가이샤 | 감광성 페이스트 및 디스플레이 패널용 부재의 제조 방법 |
| US7435361B2 (en) | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| US7556748B2 (en) * | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
| US7462304B2 (en) * | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
| JP4817291B2 (ja) * | 2005-10-25 | 2011-11-16 | Okiセミコンダクタ株式会社 | 半導体ウェハの製造方法 |
| JP2007194580A (ja) * | 2005-12-21 | 2007-08-02 | E I Du Pont De Nemours & Co | 太陽電池電極用ペースト |
| EP1993144A4 (en) * | 2006-03-07 | 2011-05-11 | Murata Manufacturing Co | CONDUCTIVE PASTE AND SOLAR CELL |
| NL2000248C2 (nl) * | 2006-09-25 | 2008-03-26 | Ecn Energieonderzoek Ct Nederl | Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering. |
| TWI449183B (zh) | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| WO2009052356A2 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| US20090107546A1 (en) * | 2007-10-29 | 2009-04-30 | Palo Alto Research Center Incorporated | Co-extruded compositions for high aspect ratio structures |
| US8253010B2 (en) * | 2007-11-23 | 2012-08-28 | Big Sun Energy Technology Inc. | Solar cell with two exposed surfaces of ARC layer disposed at different levels |
| US20110027935A1 (en) * | 2008-03-14 | 2011-02-03 | Atomic Energy Council - Institute Of Nuclear Energy Research | Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots |
| JP2011517117A (ja) * | 2008-04-09 | 2011-05-26 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 伝導性組成物、および半導体デバイスの製造における使用方法 |
| US8008179B2 (en) * | 2008-05-28 | 2011-08-30 | E.I. Du Pont De Nemours And Company | Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers |
| US8128846B2 (en) * | 2008-05-28 | 2012-03-06 | E. I. Du Pont De Nemours And Company | Silver composition for micro-deposition direct writing silver conductor lines on photovoltaic wafers |
| US8158504B2 (en) | 2008-05-30 | 2012-04-17 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components |
| ES2427615T3 (es) | 2008-05-30 | 2013-10-31 | E. I. Du Pont De Nemours And Company | Composiciones conductoras y procedimientos para uso en la fabricación de dispositivos semiconductores |
| TW201007770A (en) * | 2008-06-06 | 2010-02-16 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
| TWI493605B (zh) * | 2008-06-11 | 2015-07-21 | Ind Tech Res Inst | 背面電極層的製造方法 |
| US8076777B2 (en) * | 2008-06-26 | 2011-12-13 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
| DE102008032784A1 (de) * | 2008-07-02 | 2010-03-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt |
| DE102008032554A1 (de) | 2008-07-10 | 2010-01-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallhaltige Zusammensetzung, Verfahren zur Herstellung von elektrischen Kontaktstrukturen auf elektronischen Bauteilen sowie elektronisches Bauteil |
| US20100167032A1 (en) * | 2008-12-29 | 2010-07-01 | E.I.Du Pont De Nemours And Company | Front electrode for pdp |
| CN102356434A (zh) | 2009-03-19 | 2012-02-15 | E.I.内穆尔杜邦公司 | 用于太阳能电池电极的导体浆料 |
| KR20110137826A (ko) * | 2009-04-09 | 2011-12-23 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광전지용 전도체에 사용되는 유리 조성물 |
| JP2012523365A (ja) * | 2009-04-09 | 2012-10-04 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光起電力セル用の導体中に使用されるガラス組成物 |
| EP2417074A1 (en) * | 2009-04-09 | 2012-02-15 | E. I. du Pont de Nemours and Company | Glass compositions used in conductors for photovoltaic cells |
| WO2010123967A2 (en) * | 2009-04-22 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
| WO2010124161A1 (en) * | 2009-04-23 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces |
| CN102428568A (zh) * | 2009-05-20 | 2012-04-25 | E.I.内穆尔杜邦公司 | 在硅片正面上形成栅极的方法 |
| US8486826B2 (en) * | 2009-05-20 | 2013-07-16 | E I Du Pont De Nemours And Company | Process of forming a grid electrode on the front-side of a silicon wafer |
| US20100301479A1 (en) | 2009-05-28 | 2010-12-02 | E. I. Du Pont De Nemours And Company | Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines |
| TW201115592A (en) | 2009-06-19 | 2011-05-01 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
| US20110146781A1 (en) * | 2009-06-26 | 2011-06-23 | E.I. Du Pont De Nemours And Company | Process of forming a grid cathode on the front-side of a silicon wafer |
| EP2476123A1 (en) | 2009-09-08 | 2012-07-18 | E. I. du Pont de Nemours and Company | Conductors for photovoltaic cells |
| JP5137923B2 (ja) * | 2009-09-18 | 2013-02-06 | 株式会社ノリタケカンパニーリミテド | 太陽電池用電極ペースト組成物 |
| CN102640231A (zh) | 2009-11-25 | 2012-08-15 | E·I·内穆尔杜邦公司 | 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法 |
| US8999203B2 (en) | 2009-11-25 | 2015-04-07 | E I Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| US20110143497A1 (en) * | 2009-12-16 | 2011-06-16 | E. I. Du Pont De Nemours And Company | Thick film conductive composition used in conductors for photovoltaic cells |
| US8252204B2 (en) | 2009-12-18 | 2012-08-28 | E I Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
| WO2011075703A2 (en) | 2009-12-18 | 2011-06-23 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
| US8294027B2 (en) * | 2010-01-19 | 2012-10-23 | International Business Machines Corporation | Efficiency in antireflective coating layers for solar cells |
| JP4868079B1 (ja) * | 2010-01-25 | 2012-02-01 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
| US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
| CN103038186B (zh) * | 2010-05-04 | 2018-11-09 | E·I·内穆尔杜邦公司 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
| JP5351100B2 (ja) * | 2010-07-02 | 2013-11-27 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
| US8105869B1 (en) | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
| CN102347375A (zh) * | 2010-07-30 | 2012-02-08 | E·I·内穆尔杜邦公司 | 一种包括覆盖着反射条的导电带的太阳能电池模块 |
| TW201213265A (en) | 2010-08-06 | 2012-04-01 | Du Pont | Conductive paste for a solar cell electrode |
| US9466738B2 (en) | 2010-10-28 | 2016-10-11 | Heracus Precious Metals North America Conshohocken LLC | Solar cell metallizations containing metal additive |
| US20120113650A1 (en) * | 2010-11-10 | 2012-05-10 | E.I. Du Pont De Nemours And Company | Insulating white glass paste for forming insulating reflective layer |
| KR20120078109A (ko) * | 2010-12-31 | 2012-07-10 | 엘지이노텍 주식회사 | 태양 전지의 전극용 페이스트 조성물 및 태양 전지 |
| KR101896740B1 (ko) * | 2011-09-09 | 2018-09-07 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 은 태양 전지 접점 |
| DE102012221334B4 (de) | 2011-12-22 | 2018-10-25 | Schott Ag | Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen |
| US20130183795A1 (en) | 2012-01-16 | 2013-07-18 | E I Du Pont De Nemours And Company | Solar cell back side electrode |
| US20140020743A1 (en) * | 2012-07-23 | 2014-01-23 | E I Du Pont De Nemours And Company | Solar cell and manufacturing method thereof |
| US20140261662A1 (en) | 2013-03-18 | 2014-09-18 | E I Du Pont De Nemours And Company | Method of manufacturing a solar cell electrode |
| EP3250532B1 (en) * | 2015-01-26 | 2019-12-18 | Ferro Corporation | Grain boundary healing glasses and their use in transparent enamels, transparent colored enamels and opaque enamels |
| WO2016156170A1 (en) | 2015-03-27 | 2016-10-06 | Heraeus Deutschland Gmbh & Co Kg | Electro-conductive pastes comprising an oxide additive |
| US10056508B2 (en) | 2015-03-27 | 2018-08-21 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive pastes comprising a metal compound |
| JP6624930B2 (ja) | 2015-12-26 | 2019-12-25 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
| JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
| JP6688500B2 (ja) * | 2016-06-29 | 2020-04-28 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
| JP6720747B2 (ja) | 2016-07-19 | 2020-07-08 | 日亜化学工業株式会社 | 半導体装置、基台及びそれらの製造方法 |
| TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
| KR102639865B1 (ko) * | 2017-12-15 | 2024-02-22 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 후막 도체 형성용 분말 조성물 및 후막 도체 형성용 페이스트 |
| KR102243472B1 (ko) * | 2018-12-17 | 2021-04-26 | 주식회사 경동원 | 전력반도체 접합용 소결 페이스트 조성물 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07105717A (ja) * | 1993-10-07 | 1995-04-21 | Murata Mfg Co Ltd | 積層電子部品の外部電極用卑金属組成物 |
| JPH10326522A (ja) * | 1997-03-24 | 1998-12-08 | Murata Mfg Co Ltd | 太陽電池用導電性組成物 |
| JPH1153938A (ja) * | 1997-08-07 | 1999-02-26 | Murata Mfg Co Ltd | 半導体セラミック用導電性ペースト及び半導体セラミック部品 |
| KR20020005514A (ko) * | 2000-07-10 | 2002-01-17 | 사토 히로시 | 전도성 페이스트, 외부 전극 및 그의 제조 방법 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
| JPS6166305A (ja) * | 1984-09-07 | 1986-04-05 | 田中マツセイ株式会社 | 導体組成物 |
| JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
| JPS62259302A (ja) * | 1986-05-02 | 1987-11-11 | 同和鉱業株式会社 | 導電ペ−スト組成物 |
| CA2058414C (en) | 1990-03-19 | 1995-11-14 | Akinori Yokoyama | High temperature baking paste |
| JPH059623A (ja) | 1991-07-01 | 1993-01-19 | Sumitomo Metal Mining Co Ltd | 銀−金属酸化物複合材料の製造方法 |
| US5302557A (en) * | 1991-12-03 | 1994-04-12 | E. I. Du Pont De Nemours And Company | Automotive glass thick film conductor paste |
| US5296413A (en) | 1991-12-03 | 1994-03-22 | E. I. Du Pont De Nemours And Company | Automotive glass thick film conductor paste |
| JP3211641B2 (ja) * | 1995-09-22 | 2001-09-25 | 株式会社村田製作所 | 導電性組成物 |
| JP3209089B2 (ja) * | 1996-05-09 | 2001-09-17 | 昭栄化学工業株式会社 | 導電性ペースト |
| US6071437A (en) * | 1998-02-26 | 2000-06-06 | Murata Manufacturing Co., Ltd. | Electrically conductive composition for a solar cell |
| JP3430068B2 (ja) | 1999-04-16 | 2003-07-28 | シャープ株式会社 | 太陽電池の電極 |
| JP4331827B2 (ja) | 1999-06-29 | 2009-09-16 | 京セラ株式会社 | 太陽電池素子の製造方法 |
| JP2001118425A (ja) * | 1999-10-21 | 2001-04-27 | Murata Mfg Co Ltd | 導電性ペースト |
| JP2001127317A (ja) | 1999-10-28 | 2001-05-11 | Kyocera Corp | 太陽電池の製造方法 |
| US6738251B2 (en) * | 2000-01-28 | 2004-05-18 | Tdk Corporation | Conductive pattern incorporated in a multilayered substrate, multilayered substrate incorporating a conductive pattern, and a method of fabricating a multilayered substrate |
| JP2001313400A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 太陽電池素子の形成方法 |
| KR100584073B1 (ko) * | 2001-09-20 | 2006-05-29 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 은 도전성 조성물 |
| JP3910072B2 (ja) | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
| JP2004146521A (ja) | 2002-10-23 | 2004-05-20 | Sharp Corp | 銀電極用ペーストおよびそれを用いた太陽電池セル |
| US7138347B2 (en) | 2003-08-14 | 2006-11-21 | E. I. Du Pont De Nemours And Company | Thick-film conductor paste for automotive glass |
| US20060001009A1 (en) | 2004-06-30 | 2006-01-05 | Garreau-Iles Angelique Genevie | Thick-film conductive paste |
| US7462304B2 (en) * | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
| US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| US7556748B2 (en) * | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
-
2005
- 2005-04-14 US US11/106,245 patent/US7462304B2/en not_active Expired - Fee Related
-
2006
- 2006-04-12 AU AU2006201555A patent/AU2006201555A1/en not_active Abandoned
- 2006-04-13 EP EP20060252077 patent/EP1713095B1/en not_active Revoked
- 2006-04-14 CN CN2006100748111A patent/CN1862839B/zh not_active Expired - Fee Related
- 2006-04-14 JP JP2006112246A patent/JP5362946B2/ja not_active Expired - Fee Related
- 2006-04-14 KR KR1020060034126A patent/KR100887128B1/ko not_active Expired - Fee Related
- 2006-04-14 TW TW95113535A patent/TWI338308B/zh not_active IP Right Cessation
-
2008
- 2008-10-23 US US12/256,825 patent/US8313673B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07105717A (ja) * | 1993-10-07 | 1995-04-21 | Murata Mfg Co Ltd | 積層電子部品の外部電極用卑金属組成物 |
| JPH10326522A (ja) * | 1997-03-24 | 1998-12-08 | Murata Mfg Co Ltd | 太陽電池用導電性組成物 |
| JPH1153938A (ja) * | 1997-08-07 | 1999-02-26 | Murata Mfg Co Ltd | 半導体セラミック用導電性ペースト及び半導体セラミック部品 |
| KR20020005514A (ko) * | 2000-07-10 | 2002-01-17 | 사토 히로시 | 전도성 페이스트, 외부 전극 및 그의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060108551A (ko) | 2006-10-18 |
| AU2006201555A1 (en) | 2006-11-02 |
| CN1862839A (zh) | 2006-11-15 |
| US8313673B2 (en) | 2012-11-20 |
| EP1713095A2 (en) | 2006-10-18 |
| EP1713095B1 (en) | 2011-08-03 |
| US20060231800A1 (en) | 2006-10-19 |
| EP1713095A3 (en) | 2007-03-07 |
| TW200731291A (en) | 2007-08-16 |
| JP2006302891A (ja) | 2006-11-02 |
| CN1862839B (zh) | 2010-04-21 |
| JP5362946B2 (ja) | 2013-12-11 |
| US20090044858A1 (en) | 2009-02-19 |
| TWI338308B (en) | 2011-03-01 |
| US7462304B2 (en) | 2008-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100887128B1 (ko) | 반도체 소자의 제조 방법 및 그에 사용되는 전도성 조성물 | |
| KR100775733B1 (ko) | 반도체 소자의 제조 방법 및 그에 사용되는 전도성 조성물 | |
| KR100837994B1 (ko) | 전도성 조성물 및 반도체 소자의 제조에 사용하는 방법 | |
| KR101086183B1 (ko) | 후막 전도성 조성물 및 반도체 소자의 제조에 사용하기 위한 공정 | |
| US8231934B2 (en) | Conductive paste for solar cell electrode | |
| US9076571B2 (en) | Thick-film conductive compositions with nano-sized zinc additive | |
| EP2193527A1 (en) | Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive | |
| KR20110003382A (ko) | 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 | |
| WO2009052266A1 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive | |
| EP2191481A1 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars | |
| WO2009052356A2 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| AMND | Amendment | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| AMND | Amendment | ||
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| J201 | Request for trial against refusal decision | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PJ0201 | Trial against decision of rejection |
St.27 status event code: A-3-3-V10-V11-apl-PJ0201 |
|
| PB0901 | Examination by re-examination before a trial |
St.27 status event code: A-6-3-E10-E12-rex-PB0901 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| B701 | Decision to grant | ||
| PB0701 | Decision of registration after re-examination before a trial |
St.27 status event code: A-3-4-F10-F13-rex-PB0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20120207 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20130117 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20140227 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20140227 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |