JP2006245989A - 弾性表面波装置 - Google Patents
弾性表面波装置 Download PDFInfo
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- JP2006245989A JP2006245989A JP2005058549A JP2005058549A JP2006245989A JP 2006245989 A JP2006245989 A JP 2006245989A JP 2005058549 A JP2005058549 A JP 2005058549A JP 2005058549 A JP2005058549 A JP 2005058549A JP 2006245989 A JP2006245989 A JP 2006245989A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 89
- 229920005989 resin Polymers 0.000 claims abstract description 108
- 239000011347 resin Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims abstract description 20
- 239000000945 filler Substances 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05573—Single external layer
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
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- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】実装基板13と弾性表面波素子11を封止する封止樹脂21を3層構造とし、最外層の樹脂よりも中間層の樹脂の弾性率が大きく、最外層の樹脂よりも最内層の樹脂の弾性率が小さい構造とすることにより、外部から圧力が加わった際のバンプの潰れを抑え、かつ温度変化によるバンプへの応力を低減している。
【選択図】図1
Description
以下、実施の形態1を用いて、本発明における弾性表面波装置について、図面を参照しながら説明する。
以下、実施の形態2を用いて、本発明について説明する。実施の形態1にかかる発明では弾性表面波素子と実装基板にはさまれた空間には封止樹脂が入っていないのに対して、本実施の形態2にかかる発明では、弾性表面波素子と実装基板にはさまれた空間の一部に第1の樹脂および第2の樹脂が入り込んでいる点で実施の形態1と相違する。
12b PAD電極
13 実装基板
14a、14b PAD電極
17 バンプ
20 振動空間
21 封止樹脂
21a 第1の樹脂
21b 第2の樹脂
21c 第3の樹脂
Claims (6)
- 弾性表面波素子と実装基板とが、前記弾性表面波素子の励振部の面と前記実装基板の上面とが対面するように配置され、両者のパッド電極が電気的に接続されるようにバンプで固定され、前記弾性表面波素子の励振部と前記実装基板との間に振動空間が確保された形で前記弾性表面波素子を覆うように前記実装基板の上面が封止樹脂で封止された構成を有する弾性表面波装置であって、前記封止樹脂は、前記弾性表面波素子の裏面および側面および前記実装基板の上面の少なくとも一部を覆う第1の樹脂と、少なくとも第1の樹脂を覆う第2の樹脂と、少なくとも第2の樹脂を覆う第3の樹脂との少なくとも3層構造からなり、第2の樹脂は第3の樹脂よりも弾性率が大きく、かつ第1の樹脂は第3の樹脂よりも弾性率が小さい弾性表面波装置。
- 弾性表面波素子側面に接する第1の樹脂の厚さは、前記弾性表面波素子と実装基板との間の空間の高さの1/10〜1/2である請求項1記載の弾性表面波装置。
- 弾性表面波素子と実装基板にはさまれた空間の一部に少なくとも第2の樹脂が存在する請求項1記載の弾性表面波装置。
- 第2の樹脂の中にフィラーが含まれている請求項3記載の弾性表面波装置。
- フィラーには、弾性表面波素子と実装基板との間の空間の高さの40%以上の直径を持つフィラーが含まれている請求項4記載の弾性表面波装置。
- 第2の樹脂および第3の樹脂は、実装基板に接していない請求項1記載の弾性表面波装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005058549A JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
DE602006002442T DE602006002442D1 (de) | 2005-03-03 | 2006-02-27 | Akustische oberflächenwellenvorrichtung |
CN2006800001807A CN1943111B (zh) | 2005-03-03 | 2006-02-27 | 弹性表面波装置 |
PCT/JP2006/303570 WO2006093078A1 (ja) | 2005-03-03 | 2006-02-27 | 弾性表面波装置 |
US10/594,333 US7474175B2 (en) | 2005-03-03 | 2006-02-27 | Surface acoustic wave device |
EP06714707A EP1744453B1 (en) | 2005-03-03 | 2006-02-27 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005058549A JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006245989A true JP2006245989A (ja) | 2006-09-14 |
JP4645233B2 JP4645233B2 (ja) | 2011-03-09 |
Family
ID=36941107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005058549A Active JP4645233B2 (ja) | 2005-03-03 | 2005-03-03 | 弾性表面波装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7474175B2 (ja) |
EP (1) | EP1744453B1 (ja) |
JP (1) | JP4645233B2 (ja) |
CN (1) | CN1943111B (ja) |
DE (1) | DE602006002442D1 (ja) |
WO (1) | WO2006093078A1 (ja) |
Cited By (6)
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JP2008227748A (ja) * | 2007-03-09 | 2008-09-25 | Fujitsu Media Device Kk | 弾性波デバイスおよびその製造方法 |
JP2011151553A (ja) * | 2010-01-20 | 2011-08-04 | Murata Mfg Co Ltd | 弾性波デュプレクサ |
JP2011151552A (ja) * | 2010-01-20 | 2011-08-04 | Murata Mfg Co Ltd | 弾性波デュプレクサ |
WO2013121689A1 (ja) * | 2012-02-15 | 2013-08-22 | 株式会社村田製作所 | 電子部品及びその製造方法 |
US9704770B2 (en) | 2014-05-14 | 2017-07-11 | Murata Manufacturing Co., Ltd. | Electronic component module |
US11764753B2 (en) | 2016-07-01 | 2023-09-19 | Murata Manufacturing Co., Ltd. | Elastic wave device and electronic component |
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JP5143451B2 (ja) * | 2007-03-15 | 2013-02-13 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP5543086B2 (ja) * | 2008-06-25 | 2014-07-09 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
JP5686943B2 (ja) * | 2008-09-17 | 2015-03-18 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
US9072204B2 (en) * | 2009-07-17 | 2015-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Electronic module and production method therefor |
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WO2016111512A1 (en) | 2015-01-09 | 2016-07-14 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
KR102474242B1 (ko) * | 2015-01-09 | 2022-12-06 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US9257834B1 (en) * | 2015-02-13 | 2016-02-09 | The Silanna Group Pty Ltd. | Single-laminate galvanic isolator assemblies |
US10438864B2 (en) * | 2015-08-21 | 2019-10-08 | Hewlett-Packard Development Company, L.P. | Circuit packages comprising epoxy mold compounds and methods of compression molding |
US9691637B2 (en) * | 2015-10-07 | 2017-06-27 | Nxp Usa, Inc. | Method for packaging an integrated circuit device with stress buffer |
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WO2017159377A1 (ja) * | 2016-03-18 | 2017-09-21 | 株式会社村田製作所 | 積層コンデンサ内蔵基板 |
WO2018235876A1 (ja) * | 2017-06-23 | 2018-12-27 | 株式会社村田製作所 | 弾性波装置、フロントエンド回路及び通信装置 |
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KR20220041110A (ko) * | 2019-08-09 | 2022-03-31 | 나가세케무텍쿠스가부시키가이샤 | 몰드 언더필 봉지용의 다층 시트, 몰드 언더필 봉지 방법, 전자 부품 실장 기판 및 전자 부품 실장 기판의 제조 방법 |
CN114731152A (zh) * | 2019-11-21 | 2022-07-08 | 株式会社村田制作所 | 电子部件 |
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Also Published As
Publication number | Publication date |
---|---|
WO2006093078A1 (ja) | 2006-09-08 |
US7474175B2 (en) | 2009-01-06 |
CN1943111B (zh) | 2010-08-18 |
EP1744453A1 (en) | 2007-01-17 |
EP1744453B1 (en) | 2008-08-27 |
US20080272858A1 (en) | 2008-11-06 |
DE602006002442D1 (de) | 2008-10-09 |
EP1744453A4 (en) | 2007-12-05 |
CN1943111A (zh) | 2007-04-04 |
JP4645233B2 (ja) | 2011-03-09 |
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