JP2006244891A - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置 Download PDF

Info

Publication number
JP2006244891A
JP2006244891A JP2005060151A JP2005060151A JP2006244891A JP 2006244891 A JP2006244891 A JP 2006244891A JP 2005060151 A JP2005060151 A JP 2005060151A JP 2005060151 A JP2005060151 A JP 2005060151A JP 2006244891 A JP2006244891 A JP 2006244891A
Authority
JP
Japan
Prior art keywords
microwave
plasma
planar antenna
chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005060151A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006244891A5 (enExample
Inventor
Cai Zhong Tian
才忠 田
Kiyotaka Ishibashi
清隆 石橋
Toshihisa Nozawa
俊久 野沢
Nobuhiko Yamamoto
伸彦 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005060151A priority Critical patent/JP2006244891A/ja
Priority to CNA2006800070510A priority patent/CN101133688A/zh
Priority to KR1020077022525A priority patent/KR100960424B1/ko
Priority to PCT/JP2006/303048 priority patent/WO2006092985A1/ja
Priority to US11/885,625 priority patent/US20080190560A1/en
Publication of JP2006244891A publication Critical patent/JP2006244891A/ja
Publication of JP2006244891A5 publication Critical patent/JP2006244891A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2005060151A 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置 Pending JP2006244891A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005060151A JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置
CNA2006800070510A CN101133688A (zh) 2005-03-04 2006-02-21 微波等离子体处理装置
KR1020077022525A KR100960424B1 (ko) 2005-03-04 2006-02-21 마이크로파 플라즈마 처리 장치
PCT/JP2006/303048 WO2006092985A1 (ja) 2005-03-04 2006-02-21 マイクロ波プラズマ処理装置
US11/885,625 US20080190560A1 (en) 2005-03-04 2006-02-21 Microwave Plasma Processing Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005060151A JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2006244891A true JP2006244891A (ja) 2006-09-14
JP2006244891A5 JP2006244891A5 (enExample) 2008-03-27

Family

ID=36941020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005060151A Pending JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP2006244891A (enExample)
KR (1) KR100960424B1 (enExample)
CN (1) CN101133688A (enExample)
WO (1) WO2006092985A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD572707S1 (en) 2006-12-15 2008-07-08 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
WO2009028314A1 (ja) * 2007-08-31 2009-03-05 Tokyo Electron Limited 半導体装置の製造方法
USD589034S1 (en) 2006-12-15 2009-03-24 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
WO2009113680A1 (ja) * 2008-03-14 2009-09-17 東京エレクトロン株式会社 平面アンテナ部材、及び、これを備えたプラズマ処理装置
JP2011003464A (ja) * 2009-06-19 2011-01-06 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置用冷却装置
WO2011013633A1 (ja) * 2009-07-27 2011-02-03 東京エレクトロン株式会社 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP2013251574A (ja) * 2008-07-15 2013-12-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、及び冷却ジャケットの製造方法
KR101362914B1 (ko) * 2011-07-06 2014-02-14 도쿄엘렉트론가부시키가이샤 안테나, 유전체창, 플라즈마 처리 장치 및 플라즈마 처리 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5578865B2 (ja) * 2009-03-25 2014-08-27 東京エレクトロン株式会社 誘導結合プラズマ処理装置のカバー固定具およびカバー固定装置
JP5214774B2 (ja) 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101966797B1 (ko) * 2011-10-13 2019-04-08 세메스 주식회사 기판 처리 장치
GB201410703D0 (en) * 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP2016225203A (ja) * 2015-06-02 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置
JP6883953B2 (ja) * 2016-06-10 2021-06-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法
CN106053357A (zh) * 2016-07-12 2016-10-26 中国石油化工股份有限公司 一种等离子体原位表征方法
KR101966807B1 (ko) * 2017-03-27 2019-04-08 세메스 주식회사 기판 처리 장치
JP6973718B2 (ja) * 2018-03-19 2021-12-01 株式会社神戸製鋼所 プラズマｃｖｄ装置、及びフィルムの製造方法
CN111417227B (zh) * 2019-01-04 2025-08-05 海尔智家股份有限公司 加热装置
ES2861810T3 (es) * 2019-01-25 2021-10-06 Ining S R O Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
CN114689267B (zh) * 2022-05-30 2022-08-05 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2002280361A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd プラズマ処理装置およびその装置を用いた半導体装置の製造方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP2004266268A (ja) * 2003-02-14 2004-09-24 Tokyo Electron Ltd プラズマ発生装置およびプラズマ発生方法ならびにリモートプラズマ処理装置
JP2004303958A (ja) * 2003-03-31 2004-10-28 Sharp Corp プラズマプロセス装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2002280361A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd プラズマ処理装置およびその装置を用いた半導体装置の製造方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP2004266268A (ja) * 2003-02-14 2004-09-24 Tokyo Electron Ltd プラズマ発生装置およびプラズマ発生方法ならびにリモートプラズマ処理装置
JP2004303958A (ja) * 2003-03-31 2004-10-28 Sharp Corp プラズマプロセス装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD572707S1 (en) 2006-12-15 2008-07-08 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
USD589034S1 (en) 2006-12-15 2009-03-24 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
WO2009028314A1 (ja) * 2007-08-31 2009-03-05 Tokyo Electron Limited 半導体装置の製造方法
JP2009059850A (ja) * 2007-08-31 2009-03-19 Tohoku Univ 半導体装置の製造方法
KR101121434B1 (ko) * 2007-08-31 2012-03-22 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 반도체 장치의 제조 방법
US8497214B2 (en) 2007-08-31 2013-07-30 Tokyo Electron Limited Semiconductor device manufacturing method
WO2009113680A1 (ja) * 2008-03-14 2009-09-17 東京エレクトロン株式会社 平面アンテナ部材、及び、これを備えたプラズマ処理装置
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP2013251574A (ja) * 2008-07-15 2013-12-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、及び冷却ジャケットの製造方法
JP2011003464A (ja) * 2009-06-19 2011-01-06 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置用冷却装置
WO2011013633A1 (ja) * 2009-07-27 2011-02-03 東京エレクトロン株式会社 平面アンテナ部材およびこれを備えたプラズマ処理装置
KR101362914B1 (ko) * 2011-07-06 2014-02-14 도쿄엘렉트론가부시키가이샤 안테나, 유전체창, 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
WO2006092985A1 (ja) 2006-09-08
CN101133688A (zh) 2008-02-27
KR100960424B1 (ko) 2010-05-28
KR20070108929A (ko) 2007-11-13

Similar Documents

Publication Publication Date Title
JP2006244891A (ja) マイクロ波プラズマ処理装置
KR101317018B1 (ko) 플라즈마 처리 장치
JP5438205B2 (ja) プラズマ処理装置用の天板及びプラズマ処理装置
JP4149427B2 (ja) マイクロ波プラズマ処理装置
JP5096047B2 (ja) マイクロ波プラズマ処理装置およびマイクロ波透過板
JP4677918B2 (ja) プラズマ処理装置及びプラズマ処理方法
JPWO2008108213A1 (ja) プラズマ処理装置、プラズマ処理方法、および記憶媒体
JP2007042951A (ja) プラズマ処理装置
JP4979389B2 (ja) プラズマ処理装置
JP2018078010A (ja) マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
JP5422396B2 (ja) マイクロ波プラズマ処理装置
JP2013045551A (ja) プラズマ処理装置、マイクロ波導入装置及びプラズマ処理方法
US20090050052A1 (en) Plasma processing apparatus
JP5479013B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP5374853B2 (ja) プラズマ処理装置
JP2017226894A (ja) プラズマ成膜方法およびプラズマ成膜装置
US20080190560A1 (en) Microwave Plasma Processing Apparatus
JP2002075881A (ja) プラズマ処理装置
JP2018006256A (ja) マイクロ波プラズマ処理装置
JP6700128B2 (ja) マイクロ波プラズマ処理装置
JP5728565B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP4709192B2 (ja) プラズマ処理装置
JP2013033979A (ja) マイクロ波プラズマ処理装置
JP5066502B2 (ja) プラズマ処理装置
JP2009099975A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080204

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101012

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110315