WO2006092985A1 - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置 Download PDF

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Publication number
WO2006092985A1
WO2006092985A1 PCT/JP2006/303048 JP2006303048W WO2006092985A1 WO 2006092985 A1 WO2006092985 A1 WO 2006092985A1 JP 2006303048 W JP2006303048 W JP 2006303048W WO 2006092985 A1 WO2006092985 A1 WO 2006092985A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
chamber
planar antenna
plasma
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/303048
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Caizhong Tian
Kiyotaka Ishibashi
Toshihisa Nozawa
Nobuhiko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2006092985A1 publication Critical patent/WO2006092985A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Definitions

  • a chamber 1 in which an object to be processed is accommodated, a processing gas supply means for supplying a processing gas into the chamber 1, and plasma of the processing gas is formed in the chamber 1.
  • a microwave generation source for generating a microwave, a waveguide means for guiding the microwave generated by the microwave generation source toward the chamber, and a microwave guided by the waveguide means toward the chamber A planar antenna having a conductor force having a plurality of microwave radiation holes to be radiated, and a top wall of the chamber, and transmitting a microwave that has passed through the microphone mouth radiation holes of the planar antenna.
  • a cooling water flow path 34a is formed in the shield lid 34. By allowing cooling water to flow through the cooling water flow path 34a, the planar antenna 31, the microwave transmission plate 28, the slow wave plate 33, and the shield cover 34 can be cooled.
  • the shield lid 34 is grounded.
  • C l / ⁇ (1 / Cl) + (1 / C2) ⁇ .
  • the equivalent thickness d2 at this time corresponds to the average thickness of the projections and depressions, as shown in FIG. 4 (b).
  • Wafer W is placed on susceptor 2.
  • Planar antenna Diameter ⁇ 344 ⁇ , thickness 0.3mm
  • Can include an apparatus in which these are made of quartz (SiO 2).
  • the microwave transmitting plate 28 and the slow wave plate 33 may be made of different materials having a dielectric constant close to that of alumina formed by laminating alumina and another material.
  • various materials having a relative permittivity in the range of 7.4 force 9.6 are combined so that the ratio of the permittivity values is between 70% and 130%, which can satisfy the resonance condition. obtain.
  • a plasma etching apparatus or a plasma surface modification apparatus can be cited as an example in which an apparatus in which the microwave transmission plate 28 and the slow wave plate 33 are made of quartz is suitably applied.
  • the microphone aperture transmission plate 28 is sputtered by ion bombardment.
  • the element constituting the microwave transmission plate 28 contains a metal
  • the object to be treated may be contaminated with the metal. Therefore, for example, alumina cannot be used.
  • the microwave transmission plate 28 is made of quartz, the object to be processed is often a silicon wafer or a glass substrate, and these and quartz are mainly composed of the same element Si. There is no metal contamination.
  • the microwave radiation hole 32 is formed (arranged) by three turns.
  • the 3-turn device is much more difficult to design and adjust the slot than the 2-turn device.
  • increasing the number of slots in the middle turn does not increase the plasma density directly below it, but decreases the density at the center of the plasma space and increases the density at the outer periphery, and vice versa. It is possible.
  • the microwaves radiated from the slots of the intermediate turn are also the forces that interfere with the electromagnetic waves radiated from the slots of the inner and outer turns.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2006/303048 2005-03-04 2006-02-21 マイクロ波プラズマ処理装置 Ceased WO2006092985A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-060151 2005-03-04
JP2005060151A JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置

Publications (1)

Publication Number Publication Date
WO2006092985A1 true WO2006092985A1 (ja) 2006-09-08

Family

ID=36941020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/303048 Ceased WO2006092985A1 (ja) 2005-03-04 2006-02-21 マイクロ波プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP2006244891A (enExample)
KR (1) KR100960424B1 (enExample)
CN (1) CN101133688A (enExample)
WO (1) WO2006092985A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010086950A1 (ja) * 2009-01-30 2010-08-05 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
CN103533739A (zh) * 2009-03-25 2014-01-22 东京毅力科创株式会社 电感耦合等离子处理装置的罩固定器具和罩固定装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD589034S1 (en) 2006-12-15 2009-03-24 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
TWD123708S1 (zh) 2006-12-15 2008-07-11 東京威力科創股份有限公司 電漿處理裝置用微波導入天線
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5411136B2 (ja) * 2008-07-15 2014-02-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及び冷却ジャケットの製造方法
JP2011003464A (ja) * 2009-06-19 2011-01-06 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置用冷却装置
JP2011029416A (ja) * 2009-07-27 2011-02-10 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5214774B2 (ja) 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
KR101966797B1 (ko) * 2011-10-13 2019-04-08 세메스 주식회사 기판 처리 장치
GB201410703D0 (en) * 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP2016225203A (ja) * 2015-06-02 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置
JP6883953B2 (ja) * 2016-06-10 2021-06-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法
CN106053357A (zh) * 2016-07-12 2016-10-26 中国石油化工股份有限公司 一种等离子体原位表征方法
KR101966807B1 (ko) * 2017-03-27 2019-04-08 세메스 주식회사 기판 처리 장치
JP6973718B2 (ja) * 2018-03-19 2021-12-01 株式会社神戸製鋼所 プラズマｃｖｄ装置、及びフィルムの製造方法
CN111417227B (zh) * 2019-01-04 2025-08-05 海尔智家股份有限公司 加热装置
ES2861810T3 (es) * 2019-01-25 2021-10-06 Ining S R O Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
CN114689267B (zh) * 2022-05-30 2022-08-05 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2002280361A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd プラズマ処理装置およびその装置を用いた半導体装置の製造方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP2004266268A (ja) * 2003-02-14 2004-09-24 Tokyo Electron Ltd プラズマ発生装置およびプラズマ発生方法ならびにリモートプラズマ処理装置
JP2004303958A (ja) * 2003-03-31 2004-10-28 Sharp Corp プラズマプロセス装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2002280361A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd プラズマ処理装置およびその装置を用いた半導体装置の製造方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP2004266268A (ja) * 2003-02-14 2004-09-24 Tokyo Electron Ltd プラズマ発生装置およびプラズマ発生方法ならびにリモートプラズマ処理装置
JP2004303958A (ja) * 2003-03-31 2004-10-28 Sharp Corp プラズマプロセス装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010086950A1 (ja) * 2009-01-30 2010-08-05 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
CN103533739A (zh) * 2009-03-25 2014-01-22 东京毅力科创株式会社 电感耦合等离子处理装置的罩固定器具和罩固定装置

Also Published As

Publication number Publication date
CN101133688A (zh) 2008-02-27
KR100960424B1 (ko) 2010-05-28
KR20070108929A (ko) 2007-11-13
JP2006244891A (ja) 2006-09-14

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