KR100960424B1 - 마이크로파 플라즈마 처리 장치 - Google Patents

마이크로파 플라즈마 처리 장치 Download PDF

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Publication number
KR100960424B1
KR100960424B1 KR1020077022525A KR20077022525A KR100960424B1 KR 100960424 B1 KR100960424 B1 KR 100960424B1 KR 1020077022525 A KR1020077022525 A KR 1020077022525A KR 20077022525 A KR20077022525 A KR 20077022525A KR 100960424 B1 KR100960424 B1 KR 100960424B1
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KR
South Korea
Prior art keywords
microwave
planar antenna
chamber
plate
plasma
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Expired - Fee Related
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KR1020077022525A
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English (en)
Korean (ko)
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KR20070108929A (ko
Inventor
카이종 티안
기요타카 이시바시
도시히사 노자와
노부히코 야마모토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20070108929A publication Critical patent/KR20070108929A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077022525A 2005-03-04 2006-02-21 마이크로파 플라즈마 처리 장치 Expired - Fee Related KR100960424B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00060151 2005-03-04
JP2005060151A JP2006244891A (ja) 2005-03-04 2005-03-04 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20070108929A KR20070108929A (ko) 2007-11-13
KR100960424B1 true KR100960424B1 (ko) 2010-05-28

Family

ID=36941020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077022525A Expired - Fee Related KR100960424B1 (ko) 2005-03-04 2006-02-21 마이크로파 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP2006244891A (enExample)
KR (1) KR100960424B1 (enExample)
CN (1) CN101133688A (enExample)
WO (1) WO2006092985A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130040027A (ko) * 2011-10-13 2013-04-23 세메스 주식회사 기판 처리 장치
KR20180109291A (ko) * 2017-03-27 2018-10-08 세메스 주식회사 기판 처리 장치

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD589034S1 (en) 2006-12-15 2009-03-24 Tokyo Electron Limited Microwave introducing antenna for a plasma processing apparatus
TWD123708S1 (zh) 2006-12-15 2008-07-11 東京威力科創股份有限公司 電漿處理裝置用微波導入天線
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5411136B2 (ja) * 2008-07-15 2014-02-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及び冷却ジャケットの製造方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5578865B2 (ja) * 2009-03-25 2014-08-27 東京エレクトロン株式会社 誘導結合プラズマ処理装置のカバー固定具およびカバー固定装置
JP2011003464A (ja) * 2009-06-19 2011-01-06 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置用冷却装置
JP2011029416A (ja) * 2009-07-27 2011-02-10 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5214774B2 (ja) 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
GB201410703D0 (en) * 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP2016225203A (ja) * 2015-06-02 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置
JP6883953B2 (ja) * 2016-06-10 2021-06-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法
CN106053357A (zh) * 2016-07-12 2016-10-26 中国石油化工股份有限公司 一种等离子体原位表征方法
JP6973718B2 (ja) * 2018-03-19 2021-12-01 株式会社神戸製鋼所 プラズマｃｖｄ装置、及びフィルムの製造方法
CN111417227B (zh) * 2019-01-04 2025-08-05 海尔智家股份有限公司 加热装置
ES2861810T3 (es) * 2019-01-25 2021-10-06 Ining S R O Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
CN114689267B (zh) * 2022-05-30 2022-08-05 中国空气动力研究与发展中心超高速空气动力研究所 等离子体电子密度分布的七通道微波干涉仪数据处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2004265916A (ja) 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3893888B2 (ja) * 2001-03-19 2007-03-14 株式会社日立製作所 プラズマ処理装置
JP4540926B2 (ja) * 2002-07-05 2010-09-08 忠弘 大見 プラズマ処理装置
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP4588329B2 (ja) * 2003-02-14 2010-12-01 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
JP4073816B2 (ja) * 2003-03-31 2008-04-09 シャープ株式会社 プラズマプロセス装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195499A (ja) 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JP2004265916A (ja) 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130040027A (ko) * 2011-10-13 2013-04-23 세메스 주식회사 기판 처리 장치
KR101966797B1 (ko) 2011-10-13 2019-04-08 세메스 주식회사 기판 처리 장치
KR20180109291A (ko) * 2017-03-27 2018-10-08 세메스 주식회사 기판 처리 장치
KR101966807B1 (ko) 2017-03-27 2019-04-08 세메스 주식회사 기판 처리 장치

Also Published As

Publication number Publication date
WO2006092985A1 (ja) 2006-09-08
CN101133688A (zh) 2008-02-27
KR20070108929A (ko) 2007-11-13
JP2006244891A (ja) 2006-09-14

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