JP2006216710A - 半導体製造装置 - Google Patents

半導体製造装置 Download PDF

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Publication number
JP2006216710A
JP2006216710A JP2005026892A JP2005026892A JP2006216710A JP 2006216710 A JP2006216710 A JP 2006216710A JP 2005026892 A JP2005026892 A JP 2005026892A JP 2005026892 A JP2005026892 A JP 2005026892A JP 2006216710 A JP2006216710 A JP 2006216710A
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JP
Japan
Prior art keywords
gas
sample
semiconductor manufacturing
manufacturing apparatus
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005026892A
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English (en)
Japanese (ja)
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JP2006216710A5 (enExample
Inventor
Hiroyuki Kobayashi
浩之 小林
Katanobu Yokogawa
賢悦 横川
Masaru Izawa
勝 伊澤
Kenji Maeda
賢治 前田
Satoyuki Tamura
智行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2005026892A priority Critical patent/JP2006216710A/ja
Priority to US11/068,780 priority patent/US20060169207A1/en
Publication of JP2006216710A publication Critical patent/JP2006216710A/ja
Publication of JP2006216710A5 publication Critical patent/JP2006216710A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Robotics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2005026892A 2005-02-02 2005-02-02 半導体製造装置 Pending JP2006216710A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005026892A JP2006216710A (ja) 2005-02-02 2005-02-02 半導体製造装置
US11/068,780 US20060169207A1 (en) 2005-02-02 2005-03-02 Semiconductor manufacturing apparatus capable of preventing adhesion of particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026892A JP2006216710A (ja) 2005-02-02 2005-02-02 半導体製造装置

Publications (2)

Publication Number Publication Date
JP2006216710A true JP2006216710A (ja) 2006-08-17
JP2006216710A5 JP2006216710A5 (enExample) 2007-11-08

Family

ID=36755159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005026892A Pending JP2006216710A (ja) 2005-02-02 2005-02-02 半導体製造装置

Country Status (2)

Country Link
US (1) US20060169207A1 (enExample)
JP (1) JP2006216710A (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186864A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd ゲートバルブの洗浄方法及び基板処理システム
JP2008211196A (ja) * 2007-01-31 2008-09-11 Tokyo Electron Ltd 基板処理装置およびパーティクル付着防止方法
JP2009064873A (ja) * 2007-09-05 2009-03-26 Hitachi High-Technologies Corp 半導体製造装置における被処理体の搬送方法
JP2010040746A (ja) * 2008-08-05 2010-02-18 Hitachi High-Technologies Corp 真空処理装置
US8142567B2 (en) 2009-01-30 2012-03-27 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP2013048287A (ja) * 2012-11-05 2013-03-07 Hitachi High-Technologies Corp 真空処理装置
JP2016535940A (ja) * 2013-09-30 2016-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。
JP2017069357A (ja) * 2015-09-30 2017-04-06 株式会社日立ハイテクマニファクチャ＆サービス 試料搬送装置
US10119191B2 (en) 2016-06-08 2018-11-06 Applied Materials, Inc. High flow gas diffuser assemblies, systems, and methods
KR101933776B1 (ko) * 2016-01-15 2018-12-28 도쿄엘렉트론가부시키가이샤 진공 처리 장치 및 진공 처리 장치의 운전 방법
US10295240B2 (en) 2015-06-16 2019-05-21 Dongbu Daewoo Electronics Corporation Integral filter type ice maker for refrigerator and manufacturing method for the same
US10731248B2 (en) 2016-01-15 2020-08-04 Tokyo Electron Limited Vacuum processing apparatus and operation method thereof
KR20200115179A (ko) * 2019-03-26 2020-10-07 캐논 가부시끼가이샤 반송 장치, 반송 방법, 리소그래피 장치, 리소그래피 시스템, 및 물품 제조 방법
JP2020205299A (ja) * 2019-06-14 2020-12-24 株式会社日立ハイテクマニファクチャ＆サービス ウエハ搬送装置
KR20240103266A (ko) * 2022-12-27 2024-07-04 주식회사 에스지에스코리아 웨이퍼 증착 설비의 파티클 제거 장치 및 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006053941B3 (de) * 2006-11-15 2008-01-31 Siltronic Ag Verfahren zum Prüfen der mechanischen Bruchfestigkeit einer Halbleiterscheibe
KR20100100743A (ko) * 2007-12-18 2010-09-15 스미토모덴키고교가부시키가이샤 처리 방법 및 반도체 장치의 제조 방법
US8707899B2 (en) * 2009-02-26 2014-04-29 Hitachi High-Technologies Corporation Plasma processing apparatus
WO2011034057A1 (ja) * 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
JP5654807B2 (ja) * 2010-09-07 2015-01-14 東京エレクトロン株式会社 基板搬送方法及び記憶媒体
US9793143B2 (en) * 2014-01-06 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and method of operating the same
JP6564642B2 (ja) * 2015-07-23 2019-08-21 東京エレクトロン株式会社 基板搬送室、基板処理システム、及び基板搬送室内のガス置換方法
JP6215281B2 (ja) * 2015-10-27 2017-10-18 株式会社日本製鋼所 被処理体搬送装置、半導体製造装置および被処理体搬送方法
KR102204637B1 (ko) * 2016-06-03 2021-01-19 어플라이드 머티어리얼스, 인코포레이티드 챔버 내부의 유동을 확산시키는 것에 의한 더 낮은 입자 수 및 더 양호한 웨이퍼 품질을 위한 효과적이고 새로운 설계

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133644A (ja) * 1986-11-26 1988-06-06 Hitachi Electronics Eng Co Ltd ウエハ搬送フオ−ク
JPH02138420U (enExample) * 1989-04-21 1990-11-19
JPH06275534A (ja) * 1993-03-18 1994-09-30 Anelva Corp Ｃｖｄ装置
JPH07230959A (ja) * 1994-02-17 1995-08-29 Tokyo Electron Ltd 被処理体近傍空間の気流の制御方法及び減圧装置
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法
JP2004096089A (ja) * 2002-07-09 2004-03-25 Tokyo Electron Ltd 基板処理装置及び基板処理方法

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TW204411B (enExample) * 1991-06-05 1993-04-21 Tokyo Electron Co Ltd
JP3120395B2 (ja) * 1993-03-10 2000-12-25 東京エレクトロン株式会社 処理装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5685963A (en) * 1994-10-31 1997-11-11 Saes Pure Gas, Inc. In situ getter pump system and method
JP2000021870A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理装置
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
US6436170B1 (en) * 2000-06-23 2002-08-20 Air Products And Chemical, Inc. Process and apparatus for removing particles from high purity gas systems
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
US6664737B1 (en) * 2002-06-21 2003-12-16 Axcelis Technologies, Inc. Dielectric barrier discharge apparatus and process for treating a substrate
JP2005150124A (ja) * 2003-11-11 2005-06-09 Matsushita Electric Ind Co Ltd 半導体製造装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133644A (ja) * 1986-11-26 1988-06-06 Hitachi Electronics Eng Co Ltd ウエハ搬送フオ−ク
JPH02138420U (enExample) * 1989-04-21 1990-11-19
JPH06275534A (ja) * 1993-03-18 1994-09-30 Anelva Corp Ｃｖｄ装置
JPH07230959A (ja) * 1994-02-17 1995-08-29 Tokyo Electron Ltd 被処理体近傍空間の気流の制御方法及び減圧装置
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法
JP2004096089A (ja) * 2002-07-09 2004-03-25 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186864A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd ゲートバルブの洗浄方法及び基板処理システム
US8382938B2 (en) 2007-01-26 2013-02-26 Tokyo Electron Limited Gate valve cleaning method and substrate processing system
JP2008211196A (ja) * 2007-01-31 2008-09-11 Tokyo Electron Ltd 基板処理装置およびパーティクル付着防止方法
JP2009064873A (ja) * 2007-09-05 2009-03-26 Hitachi High-Technologies Corp 半導体製造装置における被処理体の搬送方法
JP2010040746A (ja) * 2008-08-05 2010-02-18 Hitachi High-Technologies Corp 真空処理装置
US8142567B2 (en) 2009-01-30 2012-03-27 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP2013048287A (ja) * 2012-11-05 2013-03-07 Hitachi High-Technologies Corp 真空処理装置
JP2016535940A (ja) * 2013-09-30 2016-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。
US10295240B2 (en) 2015-06-16 2019-05-21 Dongbu Daewoo Electronics Corporation Integral filter type ice maker for refrigerator and manufacturing method for the same
JP2017069357A (ja) * 2015-09-30 2017-04-06 株式会社日立ハイテクマニファクチャ＆サービス 試料搬送装置
KR101933776B1 (ko) * 2016-01-15 2018-12-28 도쿄엘렉트론가부시키가이샤 진공 처리 장치 및 진공 처리 장치의 운전 방법
US10731248B2 (en) 2016-01-15 2020-08-04 Tokyo Electron Limited Vacuum processing apparatus and operation method thereof
US10119191B2 (en) 2016-06-08 2018-11-06 Applied Materials, Inc. High flow gas diffuser assemblies, systems, and methods
KR20200115179A (ko) * 2019-03-26 2020-10-07 캐논 가부시끼가이샤 반송 장치, 반송 방법, 리소그래피 장치, 리소그래피 시스템, 및 물품 제조 방법
US11073769B2 (en) 2019-03-26 2021-07-27 Canon Kabushiki Kaisha Conveyance apparatus, conveyance method, lithography apparatus, lithography system, and article manufacturing method
KR102590769B1 (ko) * 2019-03-26 2023-10-18 캐논 가부시끼가이샤 반송 장치, 반송 방법, 리소그래피 장치, 리소그래피 시스템, 및 물품 제조 방법
JP2020205299A (ja) * 2019-06-14 2020-12-24 株式会社日立ハイテクマニファクチャ＆サービス ウエハ搬送装置
JP7316104B2 (ja) 2019-06-14 2023-07-27 株式会社日立ハイテク ウエハ搬送装置
KR20240103266A (ko) * 2022-12-27 2024-07-04 주식회사 에스지에스코리아 웨이퍼 증착 설비의 파티클 제거 장치 및 방법
KR102777166B1 (ko) * 2022-12-27 2025-03-07 주식회사 에스지에스코리아 웨이퍼 증착 설비의 파티클 제거 장치 및 방법

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